公开(公告)号：US5289868A

公开(公告)日：1994-03-01

申请号：US866431

申请日：1992-04-10

申请人： Yasuo Koseki ,  Ryuichi Kaji ,  Hiroaki Yoda ,  Takashi Nakao ,  Tomihisa Ohuchi ,  Akira Nishiguchi ,  Daisuke Hisajima ,  Katsuya Ebara

发明人： Yasuo Koseki ,  Ryuichi Kaji ,  Hiroaki Yoda ,  Takashi Nakao ,  Tomihisa Ohuchi ,  Akira Nishiguchi ,  Daisuke Hisajima ,  Katsuya Ebara

IPC分类号： F24F11/02 ,  F24F3/06 ,  F25B15/00 ,  F25B49/04 ,  F25B29/00

CPC分类号： F25B15/008 ,  F24F3/06 ,  F25B49/043 ,  Y02B30/62

摘要： An unit-type air conditioning system is provided to enable low-load operation of an absorption chiller heater, to thereby improve the load responsiveness, and to use such a chiller heater as an outdoor unit. A plurality of burners are provided in a high temperature generator of the absorption chiller heater, thereby enabling the low-load operation. A refrigerant return valve is provided so as to speed up the stop operation. Flow rates of pumps are controlled in accordance with detected values of temperatures in the chiller heater and a load change, thus improving the load responsiveness. Further, in the air conditioning system with this chiller heater serving as an outdoor unit, required operation prediction is performed on the basis of outer signals from load units and the like, and prediction control according to its result is conducted, further improving the load responsiveness.

摘要翻译： 提供了一种单元型空调系统，以实现吸收冷却器加热器的低负载运行，从而提高负载响应性，并且使用这样的冷却器加热器作为室外单元。 多个燃烧器设置在吸收式冷却器加热器的高温发生器中，从而能够进行低负荷运转。 设置制冷剂返回阀，以加速停止操作。 泵的流量根据检测到的冷却器加热器中的温度值和负载变化进行控制，从而提高了负载响应性。 此外，在具有该冷却器加热器作为室外机的空调系统中，根据来自负载单元等的外部信号进行所需的运行预测，进行根据其结果的预测控制，进一步提高负载响应性 。

公开(公告)号：US5275010A

公开(公告)日：1994-01-04

申请号：US933209

申请日：1992-08-21

申请人： Daisuke Hisajima ,  Tomihisa Ohuchi ,  Akira Nishiguchi ,  Yasuo Koseki ,  Michihiko Aizawa ,  Hiroaki Yoda ,  Takashi Nakao

发明人： Daisuke Hisajima ,  Tomihisa Ohuchi ,  Akira Nishiguchi ,  Yasuo Koseki ,  Michihiko Aizawa ,  Hiroaki Yoda ,  Takashi Nakao

IPC分类号： F25B15/00 ,  F25B49/04

CPC分类号： F25B49/043 ,  F25B15/008 ,  Y02B30/62

摘要： An individual air conditioning system with an absorption chiller heater having a controllable capacity, with thermal input to a burner of a high temperature regenerator being controlled by on-off control or the like even if the load is low. The temperature of cooling water is controlled in accordance with a concentration of refrigerant in an absorber, so that the refrigerating capacity of the absorption chiller heater can be freely varied from 0% to 100% without the refrigerant being frozen.

摘要翻译： 具有可控制容量的吸收式冷却器加热器的单独空调系统，即使负载低，也可以通过开关控制等来控制高温再生器的燃烧器的热输入。 冷却水的温度根据吸收器中的制冷剂的浓度来控制，使得吸收式冷却器加热器的制冷能力可以在0％至100％之间自由地变化，而不会使冷冻剂冷冻。

公开(公告)号：US5363668A

公开(公告)日：1994-11-15

申请号：US018375

申请日：1993-02-16

申请人： Takashi Nakao ,  Hiroaki Yoda

发明人： Takashi Nakao ,  Hiroaki Yoda

IPC分类号： F25B15/00 ,  F24F3/06 ,  F25B15/02 ,  F25B29/00

CPC分类号： F25B29/006 ,  F24F3/06 ,  F25B15/02 ,  F24F2203/026 ,  Y02B30/62

摘要： To provide an absorption air conditioning system and cooling/heating change-over method which do not make users uncomfortable just after a cooling mode is changed to a heating mode and vice versa, there is provided an absorption air conditioning system including an absorption cool water/hot water making machine for producing cool water/hot water for air conditioning, a room machine for carrying out the air conditioning of a room by circulation of the cool water/hot water from the absorption cool water/hot water making machine, and a piping for introducing the cool water/hot water from the absorption cool water/hot water making machine to the room machine, wherein the system further includes a bypass piping connected between the absorption cool water/hot water making machine and the room machine through a valve, and a means for opening/closing the valve.

摘要翻译： 为了提供吸收空调系统和冷却/加热转换方法，其不会使冷却模式之后的用户不舒适地变为加热模式，反之亦然，提供了一种吸收式空调系统，其包括吸收式冷水/ 用于生产用于空调的冷水/热水的热水制造机，用于通过从吸收式冷水/热水机循环冷水/热水来进行房间的空调的室内机，以及管道 用于将冷水/热水从吸收式冷水/热水机引入室内机，其中，所述系统还包括通过阀门连接在吸收式冷水/热水制造机和室内机之间的旁通管路， 以及用于打开/关闭阀的装置。

公开(公告)号：US09406871B2

公开(公告)日：2016-08-02

申请号：US14807267

申请日：2015-07-23

申请人： Masahiko Nakayama ,  Masatoshi Yoshikawa ,  Tadashi Kai ,  Yutaka Hashimoto ,  Masaru Toko ,  Hiroaki Yoda ,  Jae Geun Oh ,  Keum Bum Lee ,  Choon Kun Ryu ,  Hyung Suk Lee ,  Sook Joo Kim

发明人： Masahiko Nakayama ,  Masatoshi Yoshikawa ,  Tadashi Kai ,  Yutaka Hashimoto ,  Masaru Toko ,  Hiroaki Yoda ,  Jae Geun Oh ,  Keum Bum Lee ,  Choon Kun Ryu ,  Hyung Suk Lee ,  Sook Joo Kim

IPC分类号： H01L43/00 ,  H01L43/02 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  H01L43/10

CPC分类号： H01L43/02 ,  H01L27/222 ,  H01L27/224 ,  H01L27/226 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.

公开(公告)号：US09236563B2

公开(公告)日：2016-01-12

申请号：US14200894

申请日：2014-03-07

申请人： Yutaka Hashimoto ,  Tadashi Kai ,  Masahiko Nakayama ,  Hiroaki Yoda ,  Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Yasuyuki Sonoda

发明人： Yutaka Hashimoto ,  Tadashi Kai ,  Masahiko Nakayama ,  Hiroaki Yoda ,  Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Yasuyuki Sonoda

IPC分类号： G11C11/16 ,  H01L43/12 ,  H01L43/08

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L43/08

摘要： According to one embodiment, a magnetic memory device includes a magnetoresistance effect element having a structure in which a first magnetic layer, a nonmagnetic layer, a second magnetic layer, and a third magnetic layer are stacked, wherein the third magnetic layer comprises a first region and a plurality of second regions, and each of the second regions is surrounded by the first region, has conductivity, and has a greater magnetic property than the first region.

摘要翻译： 根据一个实施例，磁存储器件包括具有其中堆叠第一磁性层，非磁性层，第二磁性层和第三磁性层的结构的磁阻效应元件，其中第三磁性层包括第一区域 和多个第二区域，并且每个第二区域被第一区域包围，具有导电性，并且具有比第一区域更大的磁特性。

公开(公告)号：US08895162B2

公开(公告)日：2014-11-25

申请号：US13236028

申请日：2011-09-19

申请人： Katsuya Nishiyama ,  Shigemi Mizukami ,  Terunobu Miyazaki ,  Hiroaki Yoda ,  Tadashi Kai ,  Tatsuya Kishi ,  Daisuke Watanabe ,  Mikihiko Oogane ,  Yasuo Ando ,  Masatoshi Yoshikawa ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine ,  Chunlan Feng

发明人： Katsuya Nishiyama ,  Wu Feng ,  Shigemi Mizukami ,  Terunobu Miyazaki ,  Hiroaki Yoda ,  Tadashi Kai ,  Tatsuya Kishi ,  Daisuke Watanabe ,  Mikihiko Oogane ,  Yasuo Ando ,  Masatoshi Yoshikawa ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine

IPC分类号： G01R33/09 ,  H01L43/08 ,  H01F10/32 ,  H01L43/10 ,  H01F10/193 ,  G11C11/16 ,  H01L27/22 ,  B82Y25/00 ,  H01F10/28

CPC分类号： H01L27/228 ,  B82Y25/00 ,  G01R33/09 ,  G11C11/16 ,  G11C11/161 ,  H01F10/123 ,  H01F10/1933 ,  H01F10/1936 ,  H01F10/28 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1121 ,  Y10T428/1143

摘要： A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer and having a changeable magnetization direction with an easy axis of magnetization in a direction perpendicular to a film plane; a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer and having a fixed magnetization layer with an easy axis of magnetization in a direction perpendicular to the film plane. The first magnetic layer includes a ferrimagnetic layer having a DO22 structure or an L10 structure, the ferrimagnetic layer has a c-axis oriented in a direction perpendicular to the film plane, and the magnetization direction of the first magnetic layer is changeable by a current flowing through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer.

摘要翻译： 根据实施例的磁阻元件包括：基底层; 第一磁性层，形成在所述基底层上，并且具有在垂直于膜平面的方向上具有容易的磁化轴的可变磁化方向; 形成在第一磁性层上的第一非磁性层; 以及形成在第一非磁性层上并且具有在垂直于膜平面的方向上具有易磁化轴的固定磁化层的第二磁性层。 第一磁性层包括具有DO22结构或L10结构的铁氧体层，所述铁氧体层具有在垂直于所述膜平面的方向上取向的c轴，并且所述第一磁性层的磁化方向可以由电流流过 通过第一磁性层，第一非磁性层和第二磁性层。

公开(公告)号：US08884389B2

公开(公告)日：2014-11-11

申请号：US13618780

申请日：2012-09-14

申请人： Masaru Toko ,  Masahiko Nakayama ,  Akihiro Nitayama ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Hiroaki Yoda

发明人： Masaru Toko ,  Masahiko Nakayama ,  Akihiro Nitayama ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Hiroaki Yoda

IPC分类号： H01L27/22 ,  H01L21/8239 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08

CPC分类号： H01L43/08 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

摘要： According to one embodiment, a magnetoresistive element comprises a first magnetic layer having a magnetization direction invariable and perpendicular to a film surface, a tunnel barrier layer formed on the first magnetic layer, and a second magnetic layer formed on the tunnel barrier layer and having a magnetization direction variable and perpendicular to the film surface. The first magnetic layer includes an interface layer formed on an upper side in contact with a lower portion of the tunnel barrier layer, and a main body layer formed on a lower side and serving as an origin of perpendicular magnetic anisotropy. The interface layer includes a first area provided on an inner side and having magnetization, and a second area provided on an outer side to surround the first area and having magnetization smaller than the magnetization of the first area or no magnetization.

摘要翻译： 根据一个实施例，磁阻元件包括具有不变且垂直于膜表面的磁化方向的第一磁性层，形成在第一磁性层上的隧道势垒层，以及形成在隧道势垒层上的第二磁性层，并且具有 磁化方向可变并垂直于膜表面。 第一磁性层包括形成在与隧道势垒层的下部相接触的上侧的界面层，以及形成在下侧并用作垂直磁各向异性的原点的主体层。 界面层包括设置在内侧并具有磁化的第一区域和设置在外侧以围绕第一区域并且具有小于第一区域的磁化或不具有磁化的磁化的第二区域。

公开(公告)号：US08705269B2

公开(公告)日：2014-04-22

申请号：US13232782

申请日：2011-09-14

申请人： Toshihiko Nagase ,  Tadashi Kai ,  Makoto Nagamine ,  Katsuya Nishiyama ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Koji Ueda ,  Hiroaki Yoda ,  Kay Yakushiji ,  Shinji Yuasa ,  Hitoshi Kubota ,  Taro Nagahama ,  Akio Fukushima ,  Koji Ando

发明人： Toshihiko Nagase ,  Tadashi Kai ,  Makoto Nagamine ,  Katsuya Nishiyama ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Koji Ueda ,  Hiroaki Yoda ,  Kay Yakushiji ,  Shinji Yuasa ,  Hitoshi Kubota ,  Taro Nagahama ,  Akio Fukushima ,  Koji Ando

IPC分类号： G11C11/16

CPC分类号： H01L27/228 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10

摘要： A magnetoresistive element according to an embodiment includes: a first and second magnetic layers having an easy axis of magnetization in a direction perpendicular to a film plane; and a first nonmagnetic layer interposed between the first and second magnetic layers, at least one of the first and second magnetic layers including a structure formed by stacking a first and second magnetic films, the second magnetic film being located closer to the first nonmagnetic layer, the second magnetic film including a structure formed by repeating stacking of a magnetic material layer and a nonmagnetic material layer at least twice, the nonmagnetic material layers of the second magnetic film containing at least one element selected from the group consisting of Ta, W, Hf, Zr, Nb, Mo, Ti, V, and Cr, one of the first and second magnetic layers having a magnetization direction that is changed by applying a current.

摘要翻译： 根据实施例的磁阻元件包括：在垂直于膜平面的方向上具有易磁化轴的第一和第二磁性层; 以及介于所述第一和第二磁性层之间的第一非磁性层，所述第一和第二磁性层中的至少一个包括通过堆叠第一和第二磁性膜形成的结构，所述第二磁性膜位于更靠近所述第一非磁性层的位置， 所述第二磁性膜包括通过将磁性材料层和非磁性材料层重复堆叠至少两次形成的结构，所述第二磁性膜的非磁性材料层含有选自Ta，W，Hf中的至少一种元素 ，Zr，Nb，Mo，Ti，V和Cr中的一种，所述第一和第二磁性层之一具有通过施加电流而改变的磁化方向。

公开(公告)号：US08502331B2

公开(公告)日：2013-08-06

申请号：US13234720

申请日：2011-09-16

申请人： Eiji Kitagawa ,  Tadaomi Daibou ,  Yutaka Hashimoto ,  Masaru Tokou ,  Tadashi Kai ,  Makoto Nagamine ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Hiroaki Yoda ,  Kay Yakushiji ,  Shinji Yuasa ,  Hitoshi Kubota ,  Taro Nagahama ,  Akio Fukushima ,  Koji Ando

发明人： Eiji Kitagawa ,  Tadaomi Daibou ,  Yutaka Hashimoto ,  Masaru Tokou ,  Tadashi Kai ,  Makoto Nagamine ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Hiroaki Yoda ,  Kay Yakushiji ,  Shinji Yuasa ,  Hitoshi Kubota ,  Taro Nagahama ,  Akio Fukushima ,  Koji Ando

IPC分类号： H01L29/82

CPC分类号： H01L43/10 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/133 ,  H01F10/3286 ,  H01F41/307 ,  H01L27/228 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12

摘要： According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including perpendicular anisotropy to a film surface and an invariable magnetization direction, the first magnetic layer having a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element selected from a second group including Co and Fe, a second magnetic layer including perpendicular magnetic anisotropy to the film surface and a variable magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer. The magnetic film includes amorphous phases and crystals whose particle sizes are 0.5 nm or more.

摘要翻译： 根据一个实施例，磁阻效应元件包括第一磁性层，其包括对膜表面的垂直各向异性和不变的磁化方向，第一磁性层具有包括从包括Tb，Gd和Dy的第一组中选择的元素的磁性膜 以及从包括Co和Fe的第二组中选择的元素，对膜表面具有垂直磁各向异性的第二磁性层和可变磁化方向，以及在第一磁性层和第二磁性层之间的非磁性层。 磁性膜包括非晶相和粒径为0.5nm以上的晶体。

公开(公告)号：US08349622B2

公开(公告)日：2013-01-08

申请号：US12361575

申请日：2009-01-29

申请人： Sumio Ikegawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Eiji Kitagawa ,  Hiroaki Yoda

发明人： Sumio Ikegawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Eiji Kitagawa ,  Hiroaki Yoda

IPC分类号： H01L29/72

CPC分类号： G11C11/1657 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： A magneto-resistive element according to an aspect of the present invention includes a free layer whose magnetized state changes and a pinned layer whose magnetized state is fixed. The free layer comprises first and second ferromagnetic layers and a non-magnetic layer which is arranged between the first and second ferromagnetic layers. An intensity of exchange coupling between the first and second ferromagnetic layers is set so that an astroid curve in a hard axis direction opens.