公开(公告)号：US4101921A

公开(公告)日：1978-07-18

申请号：US772099

申请日：1977-02-25

申请人： Takashi Shimada ,  Kenichi Inoue ,  Takaji Ohtsu ,  Hidenobu Mochizuki ,  Jiro Yamaguchi

发明人： Takashi Shimada ,  Kenichi Inoue ,  Takaji Ohtsu ,  Hidenobu Mochizuki ,  Jiro Yamaguchi

IPC分类号： H01L21/8247 ,  H01L21/265 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L21/2652 ,  H01L29/78 ,  H01L29/792

摘要： In a memory type insulated gate field effect semiconductor device including a semiconductor layer of one conductivity type, a source region of the opposite conductivity type formed in the surface of the semiconductor layer, a drain region of the opposite conductivity type formed in the surface of the semiconductor layer, a gate insulating layer affixed to the surface of the semiconductor layer, and a gate electrode deposited on the surface of the gate insulating layer, the gate insulating layer has a pair of thick gate guarding portions which exist on side of the source and drain regions, and a thin memory portion intermediate between the thick gate guarding portions, and a surface impurity concentration per square centimeter of the semiconductor layer under the thick gate guarding portions is different from a surface impurity concentration per square centimeter of the semiconductor layer under the tin memory portion. The voltage difference between the threshold voltages of the semiconductor device at the memorized state and at the non-memorized state can be increased, and the read-out voltage of the semiconductor device can be reduced. The circuit design is simplified.

公开(公告)号：US5161123A

公开(公告)日：1992-11-03

申请号：US527821

申请日：1990-05-24

申请人： Hidenobu Mochizuki

发明人： Hidenobu Mochizuki

IPC分类号： G11C17/00 ,  G11C7/06 ,  G11C7/14 ,  G11C16/06 ,  G11C16/26 ,  H01L27/10

CPC分类号： G11C16/26 ,  G11C7/067 ,  G11C7/14

摘要： A semiconductor memory comprising a memory cell comprising a MOS transistor connected between a bit line and a reference potential terminal; a sense amplifier coupled to the bit line for reading out a potential on the bit line, the sense amplifier comprising an inverter having an input and output connected to each other via a switch; and a circuit element interposed between the bit line and the sense amplifier operative to only transmit bit line potential changes in a direction of the reference potential.

公开(公告)号：US4063275A

公开(公告)日：1977-12-13

申请号：US624889

申请日：1975-10-22

申请人： Takeshi Matsushita ,  Hisao Hayashi ,  Teruaki Aoki ,  Hidenobu Mochizuki

发明人： Takeshi Matsushita ,  Hisao Hayashi ,  Teruaki Aoki ,  Hidenobu Mochizuki

IPC分类号： H01L21/322 ,  H01L21/314 ,  H01L21/331 ,  H01L21/8247 ,  H01L23/31 ,  H01L29/06 ,  H01L29/73 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  H01L29/861 ,  H01L29/04 ,  H01L23/30

CPC分类号： H01L23/3192 ,  H01L21/314 ,  H01L23/3157 ,  H01L23/3171 ,  H01L2924/0002 ,  H01L2924/13091 ,  H01L2924/3025 ,  Y10S257/905

摘要： A semiconductive device is provided which includes a single crystal substrate. A first insulating layer arranged on one surface of the substrate is of polycrystalline silicon containing oxygen. A second insulating layer formed on the first insulating layer is of polycrystalline silicon containing one of a group consisting of nitrogen, Si.sub.3 N.sub.4, Al.sub.2 O.sub.3 and silicone resin. The substrate includes at least one PN junction which extends to the said surface of the substrate. A novel method of making is also disclosed.

摘要翻译： 提供了包括单晶衬底的半导体器件。 布置在基板的一个表面上的第一绝缘层是含氧的多晶硅。 形成在第一绝缘层上的第二绝缘层是由氮，Si 3 N 4，Al 2 O 3和有机硅树脂组成的组中的一种的多晶硅。 衬底包括延伸到衬底的所述表面的至少一个PN结。 还公开了一种新颖的制造方法。

公开(公告)号：US4062707A

公开(公告)日：1977-12-13

申请号：US654598

申请日：1976-02-02

申请人： Hidenobu Mochizuki ,  Teruaki Aoki ,  Takeshi Matsushita ,  Hisao Hayashi ,  Masanori Okayama

发明人： Hidenobu Mochizuki ,  Teruaki Aoki ,  Takeshi Matsushita ,  Hisao Hayashi ,  Masanori Okayama

IPC分类号： H01L29/73 ,  H01L21/033 ,  H01L21/22 ,  H01L21/314 ,  H01L21/331 ,  H01L23/29 ,  H01L29/00 ,  H01L21/31

CPC分类号： H01L23/291 ,  H01L21/033 ,  H01L21/314 ,  H01L29/00 ,  H01L2924/0002 ,  H01L2924/13091 ,  Y10S438/945

摘要： A method for fabricating a semiconductor device includes the steps of forming a first polycrystalline silicon layer containing oxygen atoms on a semiconductor layer, of forming a second polycrystalline silicon layer containing nitrogen atoms on the first polycrystalline silicon layer, of removing a predetermined part of the first and second polycrystalline silicon layers to form an opening therein, and of diffusing impurity material into the semiconductor layer through the opening in order to form a diffused region. The fabricating process can be remarkably simplified.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在半导体层上形成含有氧原子的第一多晶硅层，在第一多晶硅层上形成含氮原子的第二多晶硅层，去除第一多晶硅层的预定部分 和第二多晶硅层，以在其中形成开口，并且通过开口将杂质材料扩散到半导体层中，以形成扩散区域。 制造工艺可以非常简化。