公开(公告)号：US20050189620A1

公开(公告)日：2005-09-01

申请号：US10789795

申请日：2004-02-25

申请人： Takashi Sugino ,  Masaki Kusuhara ,  Masaru Umeda

发明人： Takashi Sugino ,  Masaki Kusuhara ,  Masaru Umeda

IPC分类号： H01L21/28 ,  H01L21/283 ,  H01L21/314 ,  H01L21/331 ,  H01L21/335 ,  H01L21/768 ,  H01L23/522 ,  H01L29/12 ,  H01L29/20

CPC分类号： H01L21/02175 ,  H01L21/02274 ,  H01L21/314 ,  H01L29/2003 ,  H01L29/66318 ,  H01L29/66462

摘要： A high performance semiconductor device that can realize surface protection and surface inactivation and is fabricated using a film formation method and technique that enable improvement of high frequency characteristics, and an electronic device for a communication system including the semiconductor device, are provided. The semiconductor device is characterized in that a film having boron, carbon, and nitrogen as main components and to which sulfur is added serves as a surface protection film, and at least part of a surface is covered.

摘要翻译： 提供一种能够实现表面保护和表面失活的高性能半导体器件，并且使用能够提高高频特性的成膜方法和技术以及包括该半导体器件的通信系统的电子设备来制造。 半导体器件的特征在于，以硼，碳和氮为主要成分并加入硫的膜用作表面保护膜，并且覆盖表面的至少一部分。

公开(公告)号：US20050124176A1

公开(公告)日：2005-06-09

申请号：US10484371

申请日：2002-07-17

申请人： Takashi Sugino ,  Masaki Kusuhara ,  Masaru Umeda

发明人： Takashi Sugino ,  Masaki Kusuhara ,  Masaru Umeda

IPC分类号： H01L21/331 ,  H01L21/335 ,  H01L21/337 ,  H01L29/20 ,  H01L29/737 ,  H01L29/778 ,  H01L23/58 ,  H01L21/26 ,  H01L21/324 ,  H01L21/42 ,  H01L21/477

CPC分类号： H01L29/66924 ,  H01L29/2003 ,  H01L29/66318 ,  H01L29/66462 ,  H01L29/7371 ,  H01L29/7787

摘要： A semiconductor surface treatment and a film deposition method capable of realizing surface protection and surface inactivation using a boron nitride film is provided. A high-performance semiconductor device can be manufactured by using the same surface protection technology and surface inactivation technology. Additionally, a electronic device for a communication system or a high-performance information processing device may incorporate such a semiconductor device.

摘要翻译： 提供了能够使用氮化硼膜实现表面保护和表面失活的半导体表面处理和膜沉积方法。 可以通过使用相同的表面保护技术和表面灭活技术来制造高性能半导体器件。 此外，用于通信系统的电子设备或高性能信息处理设备可以并入这样的半导体器件。

公开(公告)号：US20050064724A1

公开(公告)日：2005-03-24

申请号：US10489126

申请日：2002-09-10

申请人： Takashi Sugino ,  Masaki Kusuhara ,  Masaru Umeda

发明人： Takashi Sugino ,  Masaki Kusuhara ,  Masaru Umeda

IPC分类号： C23C16/30 ,  C23C16/36 ,  H01L21/318 ,  H01L21/768 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02112 ,  C23C16/30 ,  C23C16/36 ,  H01L21/02345 ,  H01L21/02348 ,  H01L21/318 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76835

摘要： A film formation method enables the creation of a low dielectric constant boron-carbon-nitrogen thin film. The film formation method includes the steps of generating plasma in a film formation chamber, reacting boron and carbon with nitrogen atoms inside the film formation chamber, forming a boron-carbon-nitrogen film on a substrate, and thereafter subjecting the formed film to light exposure (e.g., ultraviolet and/or infrared).

摘要翻译： 成膜方法能够形成低介电常数的硼 - 碳 - 氮的薄膜。 成膜方法包括以下步骤：在成膜室中产生等离子体，使硼和碳与成膜室内的氮原子反应，在基板上形成硼 - 碳 - 氮膜，然后对所形成的膜进行曝光 （例如，紫外线和/或红外线）。

公开(公告)号：US06482720B2

公开(公告)日：2002-11-19

申请号：US09842319

申请日：2001-04-26

申请人： Takashi Sugino ,  Shigeru Nakajima

发明人： Takashi Sugino ,  Shigeru Nakajima

IPC分类号： H01L21322

CPC分类号： H01L29/66462 ,  H01L21/306

摘要： In manufacturing compound semiconductor device, a plasma treatment is carried out by exposing surface of compound semiconductor material including AlAs or InAs exposing in atmosphere at manufacturing process in plasma of gas including any of P, N, H, and Ar at substrate temperature of less than 200° C. Desirably a second plasma treatment is carried out by exposing said compound semiconductor material in plasma of gas including p at higher substrate temperature continuously after said plasma treatment without taking the substrate out in air.

公开(公告)号：US4546478A

公开(公告)日：1985-10-08

申请号：US614390

申请日：1984-05-25

申请人： Hirokazu Shimizu ,  Kunio Itoh ,  Takashi Sugino ,  Masaru Wada

发明人： Hirokazu Shimizu ,  Kunio Itoh ,  Takashi Sugino ,  Masaru Wada

IPC分类号： H01S5/00 ,  H01L21/60 ,  H01S5/02 ,  H01S3/19

CPC分类号： H01S5/02252 ,  H01L2224/32057 ,  H01L2224/83385 ,  H01L2224/83801 ,  H01L24/31 ,  H01L24/83 ,  H01L2924/01014 ,  H01L2924/12042

摘要： A mounting of semiconductor laser chip on a heat sink or metal mount is improved so as to enable high accuracy of position and direction. A heat sink or metal mount, on which a semiconductor laser chip is mounted, comprises two parts, namely a main mount or larger portion and a sub-mount or smaller portion. The semiconductor laser chip is soldered by a solder layer on the sub-mount utilizing a microscope so as to assure an accurate position and an accurate direction with respect to the sub-mount. Then, the sub-mount is soldered on the main mount by a solder layer with an accurate relation both in position and direction by engaging a linear ridge as a first engaging means provided on the upper face of the main mount with a straight groove and a rear end face as a second engaging means, or by engaging a square recess as a first engaging means and the square bottom of the sub-mount as a second engaging means with each other. As a result of the above-mentioned structure, accurate position and direction of the semiconductor laser chip with respect to the mount is easily obtainable with a high yield.

摘要翻译： 提高半导体激光芯片在散热片或金属安装座上的安装，以实现高精度的位置和方向。 安装有半导体激光芯片的散热器或金属安装件包括两部分，即主安装件或更大部分和副安装件或更小部件。 利用显微镜将半导体激光芯片通过焊接层焊接在子座上，以确保相对于子安装座的精确位置和准确的方向。 然后，通过将位于主要安装座的上表面上设置的第一接合装置的直线状脊线与直槽相啮合，通过焊接层将焊接层焊接在主安装座上，焊接层的位置和方向都精确， 后端面作为第二接合装置，或者通过将作为第一接合装置的方形凹槽和副安装座的方形底部彼此接合作为第二接合装置。 作为上述结构的结果，可以容易地以高产率获得半导体激光器芯片相对于安装座的精确位置和方向。

公开(公告)号：US4380861A

公开(公告)日：1983-04-26

申请号：US266134

申请日：1981-05-21

申请人： Takashi Sugino ,  Kunio Itoh

发明人： Takashi Sugino ,  Kunio Itoh

IPC分类号： H01S5/223 ,  H01L21/208

CPC分类号： H01S5/2238

摘要： In a semiconductor laser comprising an active layer epitaxially formed on a semiconductor substrate and at least a current limiting layer which defines a current injection region of a stripe shape,the improvement is that said substrate has a terrace part on its principle face,said active layer has two parallel bending parts defining a stripe shape active region facing said current injection region in between andsaid stripe shape active region is disposed with a specified angle to said principle face.

摘要翻译： 在包括在半导体衬底上外延形成的有源层和限定条形电流注入区的至少限流层的半导体激光器中，改进之处在于，所述衬底在其原理面上具有露台部分，所述有源层 具有两个平行的弯曲部分，其限定面向所述电流注入区域的条状形状有源区域，并且所述条形形状有源区域以与所述原理面形成特定角度设置。

公开(公告)号：US4371967A

公开(公告)日：1983-02-01

申请号：US215665

申请日：1980-12-12

申请人： Masaru Wada ,  Hirokazu Shimizu ,  Takashi Sugino ,  Kunio Itoh

发明人： Masaru Wada ,  Hirokazu Shimizu ,  Takashi Sugino ,  Kunio Itoh

IPC分类号： H01S5/00 ,  H01S5/30 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/305 ,  H01S5/32308 ,  Y10S438/916

摘要： In a semiconductor laser which has epitaxial layers including an active layer on a semiconductor substrate, a buffer layer is formed neighboring the active layer, in order to prevent undesirable diffusion of a highly diffusing dopant (Zn) into the active layer from an adjacent layer such as the second clad layer. The buffer layer has the same conductivity as that of the adjacent layer, has a broader energy gap than the active layer, and the dopant of the buffer layer is less diffusing than that of the adjacent layer.

摘要翻译： 在半导体衬底上具有包括有源层的外延层的半导体激光器中，形成与有源层相邻的缓冲层，以便防止高度扩散的掺杂​​剂（Zn）从相邻层（例如 作为第二包覆层。 缓冲层具有与相邻层相同的导电性，具有比有源层更宽的能隙，并且缓冲层的掺杂剂比相邻层的扩散更少。

公开(公告)号：US07314651B2

公开(公告)日：2008-01-01

申请号：US10472822

申请日：2002-03-28

申请人： Hitoshi Sakamoto ,  Noriaki Ueda ,  Takashi Sugino

发明人： Hitoshi Sakamoto ,  Noriaki Ueda ,  Takashi Sugino

IPC分类号： H05H1/24 ,  C23C16/00

CPC分类号： H01L21/02274 ,  C04B35/583 ,  C04B2235/386 ,  C04B2235/422 ,  C23C16/342 ,  C23C16/36 ,  H01L21/02112 ,  H01L21/318 ,  H01L21/76829

摘要： A plasma 10 is generated within a film formation chamber 2, and mainly a nitrogen gas 11 is excited within the film formation chamber 2. Then, the excited nitrogen gas 11 is mixed with a diborane gas 13 diluted with a hydrogen gas to react them, thereby forming a boron nitride film 15 on a substrate 4. At the initial stage of film formation, the nitrogen gas 11 is supplied in excess to suppress the occurrence of an amorphous phase on the interface. As a result, the boron nitride film 15 improved in moisture absorption resistance on the interface with the substrate and maintaining low dielectric constant properties is formed.

摘要翻译： 在成膜室2内产生等离子体10，主要在成膜室2内激发氮气11。 然后，将激发的氮气11与用氢气稀释的乙硼烷气体13进行反应，从而在基板4上形成氮化硼膜15。 在成膜的初始阶段，过量地供给氮气11，以抑制界面处的非晶相的发生。 结果，氮化硼膜15与衬底的界面上的耐吸湿性提高，并且保持低的介电常数特性。

公开(公告)号：US07135358B2

公开(公告)日：2006-11-14

申请号：US10948164

申请日：2004-09-24

申请人： Takashi Sugino ,  Tomonori Shinoda

发明人： Takashi Sugino ,  Tomonori Shinoda

IPC分类号： H01L21/44

CPC分类号： H01L23/24 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： There is disclosed a process for producing a resin-sealed type electronic device which comprises forming a dam frame on edge and side portions of a substrate loaded with a single or a plurality of electronic elements so as to encompass the electronic elements by sticking down a pressure sensitive adhesive sheet to the substrate, pouring a resin for sealing in the inside of the dam frame, and heat-curing the poured resin. The process dispenses with an intricate production step or a long time in forming the dam frame, thus enabling forming of the same with a minimized number of production steps and in the shortest amount of time possible.

摘要翻译： 公开了一种用于制造树脂密封型电子器件的方法，该方法包括在装载有单个或多个电子元件的基板的边缘和侧部上形成坝框架，以便通过压下压力来包围电子元件 将粘合片粘贴到基板上，将用于密封的树脂倒入坝框的内部，并对浇注的树脂进行热固化。 该过程省去了复杂的生产步骤或长时间形成坝框架，从而能够以尽可能少的生产步骤和最短的时间来形成。

公开(公告)号：US6042922A

公开(公告)日：2000-03-28

申请号：US28147

申请日：1998-02-23

申请人： Hideo Senoo ,  Takashi Sugino ,  Shunsaku Node

发明人： Hideo Senoo ,  Takashi Sugino ,  Shunsaku Node

IPC分类号： C09J7/02 ,  C09J201/00 ,  H01L21/301 ,  H01L21/58 ,  B32B3/02

CPC分类号： H01L24/83 ,  C09J7/026 ,  H01L24/29 ,  H01L2224/2919 ,  H01L2224/8319 ,  H01L2224/8385 ,  H01L2924/01004 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01057 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/14 ,  Y10S156/93 ,  Y10S438/976 ,  Y10T156/11 ,  Y10T428/218 ,  Y10T428/24488 ,  Y10T428/24942 ,  Y10T428/2495 ,  Y10T428/2848

摘要： An adhesive sheet for wafer setting, comprising a wafer setting part composed of an expansible film and an adhesive layer for wafer setting and a marginal part outside the wafer setting part,wherein the marginal part has an antiexpansibility greater than that of the wafer setting part. This enables secure expansion in a process for producing an electronic component.

摘要翻译： 一种用于晶片固化的粘合片，包括由可膨胀膜构成的晶片固定部分和用于晶片固化的粘合剂层和晶片固定部分外部的边缘部分，其中边缘部分具有大于晶片设置部分的抗渗透性。 这使得能够在用于生产电子部件的过程中的安全扩展。