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23 条记录 (耗时 0.024 秒)

    Method for forming a thin semiconductor film and a plasma CVD apparatus to be used in the method
    1.
    发明授权
    Method for forming a thin semiconductor film and a plasma CVD apparatus to be used in the method 失效
    用于形成薄半导体膜的方法和用于该方法的等离子体CVD装置

    公开(公告)号：US5618758A

    公开(公告)日：1997-04-08

    申请号：US601990

    申请日：1996-02-15

    申请人： Takashi Tomita ,  Katsuhiko Nomoto ,  Yoshihiro Yamamoto ,  Hitoshi Sannomiya ,  Sae Takagi

    发明人： Takashi Tomita ,  Katsuhiko Nomoto ,  Yoshihiro Yamamoto ,  Hitoshi Sannomiya ,  Sae Takagi

    IPC分类号： C23C16/515 ,  H01L31/20 ,  H01L21/302

    CPC分类号： C23C16/515 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

    摘要： A method for producing a thin semiconductor film according to the present invention includes the steps of: placing a group-IV compound or a derivative thereof in a plasma state; decomposing the group-IV compound or the derivative thereof into active species; and depositing the active species on a substrate, wherein energy for generating plasma is intermittently supplied at a supply time interval which is equal to or less than a reciprocal of {(secondary reaction rate constant of a source gas reacting with active species other than long-life active species within the plasma).times.(number of source gas molecules)}.

    摘要翻译： 根据本发明的薄半导体膜的制造方法包括以下步骤：将IV族化合物或其衍生物置于等离子体状态; 将IV族化合物或其衍生物分解成活性物质; 并且将活性物质沉积在基板上，其中用于产生等离子体的能量间歇地以供给时间间隔供给，所述供给时间间隔等于或小于{（除了长时间活性物质以外的活性物质反应的源气体的二次反应速率常数） 血浆中的生命活性物质）x（源气体分子数）}。

    Method for forming a thin semiconductor film and a plasma CVD apparatus to be used in the method
    2.
    发明授权
    Method for forming a thin semiconductor film and a plasma CVD apparatus to be used in the method 失效
    用于形成薄半导体膜的方法和用于该方法的等离子体CVD装置

    公开(公告)号：US6009828A

    公开(公告)日：2000-01-04

    申请号：US783283

    申请日：1997-01-10

    申请人： Takashi Tomita ,  Katsuhiko Nomoto ,  Yoshihiro Yamamoto ,  Hitoshi Sannomiya ,  Sae Takagi

    发明人： Takashi Tomita ,  Katsuhiko Nomoto ,  Yoshihiro Yamamoto ,  Hitoshi Sannomiya ,  Sae Takagi

    IPC分类号： C23C16/515 ,  H01L31/20 ,  C23C16/00

    CPC分类号： C23C16/515 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

    摘要： A method for producing a thin semiconductor film according to the present invention includes the steps of: placing a group-IV compound or a derivative thereof in a plasma state; decomposing the group-IV compound or the derivative thereof into active species; and depositing the active species on a substrate, wherein energy for generating plasma is intermittently supplied at a supply time interval which is equal to or less than a reciprocal of {(secondary reaction rate constant of a source gas reacting with active species other than long-life active species within the plasma).times.(number of source gas molecules)}.

    摘要翻译： 根据本发明的薄半导体膜的制造方法包括以下步骤：将IV族化合物或其衍生物置于等离子体状态; 将IV族化合物或其衍生物分解成活性物质; 并且将活性物质沉积在基板上，其中用于产生等离子体的能量间歇地以供给时间间隔供给，所述供给时间间隔等于或小于{（除了长时间活性物质以外的活性物质反应的源气体的二次反应速率常数） 血浆中的生命活性物质）x（源气体分子数）}。

    Solar cell and method for fabricating the same
    5.
    发明授权
    Solar cell and method for fabricating the same 失效
    太阳能电池及其制造方法

    公开(公告)号：US5797999A

    公开(公告)日：1998-08-25

    申请号：US709505

    申请日：1996-09-06

    申请人： Hitoshi Sannomiya ,  Takashi Tomita ,  Shunpei Yamazaki ,  Yasuyuki Arai

    发明人： Hitoshi Sannomiya ,  Takashi Tomita ,  Shunpei Yamazaki ,  Yasuyuki Arai

    IPC分类号： H01L31/04 ,  H01L21/20 ,  H01L31/068 ,  H01L31/18 ,  H01L31/0368

    CPC分类号： H01L31/068 ,  H01L31/186 ,  Y02E10/547 ,  Y02P70/521

    摘要： In a method for fabricating a solar cell, an amorphous silicon film of a first conductivity type is formed on a substrate, and nickel silicide is formed thereon. The amorphous silicon film is crystallized through heat treatment to obtain a crystalline silicon film of the first conductivity type. Residual nickel silicide on the surface of the crystalline silicon film of the first conductivity type is removed. Another crystalline silicon film of a second conductivity type is further formed on the surface of the crystalline silicon film of the first conductivity type.

    摘要翻译： 在制造太阳能电池的方法中，在基板上形成第一导电类型的非晶硅膜，并在其上形成硅化镍。 通过热处理使非晶硅膜结晶，得到第一导电型的结晶硅膜。 去除第一导电类型的结晶硅膜表面上的残余镍硅化物。 在第一导电类型的结晶硅膜的表面上进一步形成第二导电类型的另一晶体硅膜。

    Light-emitting module and light-emitting system
    6.
    发明申请
    Light-emitting module and light-emitting system 有权
    发光模块和发光系统

    公开(公告)号：US20090168410A1

    公开(公告)日：2009-07-02

    申请号：US11658734

    申请日：2005-07-27

    申请人： Hiromasa Tanamura ,  Shinsuke Tachibana ,  Hitoshi Sannomiya

    发明人： Hiromasa Tanamura ,  Shinsuke Tachibana ,  Hitoshi Sannomiya

    IPC分类号： F21L4/08

    CPC分类号： H01L25/167 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Disclosed is a light-emitting module wherein light entering into a solar cell is not attenuated, thereby preventing power output decrease of the solar cell. In addition, this light-emitting module can be produced by a simple process. Specifically disclosed is a light-emitting module wherein at least (a) a solar cell unit (b) a first adhesive layer, (c) a light-emitting unit composed of a second light-transmitting insulating substrate (transparent PET), a second metal layer (circuit pattern) and a light-emitting element (chip LED), (d) a second adhesive layer and (e) a third light-transmitting insulating substrate are sequentially stacked. The transparent PET having a thickness about 50-500 μm which is provided with the circuit pattern in advance is used for producing the light-emitting unit. A silver paste which can be cured by 30-minute heating at 150° C. is used as a circuit pattern material, and the circuit pattern is formed on the transparent PET by screen printing, and then thermally cured.

    摘要翻译： 公开了一种发光模块，其中进入太阳能电池的光不被衰减，从而防止太阳能电池的功率输出减小。 此外，该发光模块可以通过简单的工艺制造。 具体公开了一种发光模块，其中至少（a）太阳能电池单元（b）第一粘合层，（c）由第二透光绝缘基板（透明PET）构成的发光单元，第二 金属层（电路图案）和发光元件（芯片LED），（d）第二粘合层和（e）第三透光绝缘基板顺序层叠。 使用预先设置有电路图案的厚度约50-500μm的透明PET用于制造发光单元。 使用可以在150℃下加热30分钟固化的银浆作为电路图案材料，通过丝网印刷在透明PET上形成电路图案，然后热固化。

    Ball screw
    7.
    发明授权
    Ball screw 有权
    滚珠丝杠

    公开(公告)号：US06993992B2

    公开(公告)日：2006-02-07

    申请号：US10608739

    申请日：2003-06-30

    申请人： Toru Kanda ,  Daisuke Maruyama ,  Hitoshi Sannomiya

    发明人： Toru Kanda ,  Daisuke Maruyama ,  Hitoshi Sannomiya

    IPC分类号： F16H25/22

    CPC分类号： F16H25/2214 ,  F16H2025/2242 ,  Y10T74/19749 ,  Y10T74/19767 ,  Y10T74/19777

    摘要： A ball screw which is little subject to deterioration of operating characteristics and occurrence of wear, torque change, noise, vibration, etc. during operation due to stagnation or competition of balls. The ball screw includes a screw shaft having a helical thread groove formed on the outer surface thereof and a nut having a thread groove formed on the inner surface thereof corresponding to the thread groove on the screw shaft which engages with the screw shaft with the interposition of a number of balls rollably provided in a helical ball rolling path formed between the two thread grooves, and spacers between adjacent ones of the number of balls, wherein the variation of the total of the gap between the balls and spacers during the rolling of the balls is smaller than 1/20 of the diameter of the ball.

    摘要翻译： 一种滚珠丝杠，由于球的停滞或竞争而在操作期间几乎不受操作特性的劣化和磨损，扭矩变化，噪音，振动等的影响。 滚珠丝杠包括螺纹轴，其螺旋螺纹槽形成在其外表面上，螺母具有形成在其内表面上的螺纹槽，螺纹槽对应于螺纹轴上的螺纹槽，螺纹轴与螺纹轴接合，插入 可滚动地设置在形成在两个螺纹槽之间的螺旋滚珠滚动路径中的多个滚珠以及相邻的多个滚珠之间的间隔件，其中滚珠滚珠期间球和间隔件之间的间隙的总和的变化 小于球直径的1/20。

    Ball screw
    8.
    发明授权
    Ball screw 有权
    滚珠丝杠

    公开(公告)号：US06722223B2

    公开(公告)日：2004-04-20

    申请号：US10062412

    申请日：2002-02-05

    申请人： Toru Kanda ,  Daisuke Maruyama ,  Hitoshi Sannomiya

    发明人： Toru Kanda ,  Daisuke Maruyama ,  Hitoshi Sannomiya

    IPC分类号： F16C2522

    CPC分类号： F16H25/2214 ,  F16H2025/2242 ,  Y10T74/19749 ,  Y10T74/19767 ,  Y10T74/19777

    摘要： A ball screw which is little subject to deterioration of operating characteristics and occurrence of wear, torque change, noise, vibration, etc. during operation due to stagnation or competition of balls. The ball screw includes a screw shaft having a helical thread groove formed on the outer surface thereof and a nut having a thread groove formed on the inner surface thereof corresponding to the thread groove on the screw shaft which engages with the screw shaft with the interposition of a number of balls rollably provided in a helical ball rolling path formed between the two thread grooves, wherein the variation of the total of the gap between the balls during the rolling of the balls is smaller than {fraction (1/20)} of the diameter of the ball.

    摘要翻译： 一种滚珠丝杠，由于球的停滞或竞争而在操作期间几乎不受操作特性的劣化和磨损，扭矩变化，噪音，振动等的影响。 滚珠丝杠包括螺纹轴，其螺旋螺纹槽形成在其外表面上，螺母具有形成在其内表面上的螺纹槽，螺纹槽对应于螺纹轴上的螺纹槽，螺纹轴与螺纹轴接合，插入 多个滚珠可滚动地设置在形成在两个螺纹槽之间的螺旋滚珠滚动路径中，其中在滚珠滚动期间滚珠之间的间隙的总和的变化小于{分数（直径的1/20） 球。

    Amorphous semiconductor device
    10.
    发明授权
    Amorphous semiconductor device 失效
    非晶半导体器件

    公开(公告)号：US4698658A

    公开(公告)日：1987-10-06

    申请号：US756854

    申请日：1985-07-19

    申请人： Hitoshi Sannomiya ,  Masaya Hijikigawa

    发明人： Hitoshi Sannomiya ,  Masaya Hijikigawa

    IPC分类号： G01J3/46 ,  H01L31/10 ,  H01L31/11 ,  H01L27/14

    CPC分类号： H01L31/11

    摘要： An amorphous semiconductor device comprising a layered structure having a p-amorphous silicon layer, an i-amorphous silicon layer, an n-amorphous silicon layer, an i-amorphous silicon layer and a p-amorphous silicon layer, or an n-amorphous silicon layer, an i-amorphous silicon layer, a p-amorphous silicon layer, an i-amorphous silicon layer and an n-amorphous silicon layer, in sequence, on a substrate, electrodes being disposed on the top layer, the central layer and the bottom layer, respectively.

    摘要翻译： 一种非晶半导体器件，包括具有p非晶硅层，i非晶硅层，n非晶硅层，i非晶硅层和p非晶硅层的层状结构或n非晶硅 层，i非晶硅层，p非晶硅层，i非晶硅层和n非晶硅层，在基板上，电极设置在顶层，中心层和 底层。