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1.发明授权Process for the manufacture of trimers of aliphatic aldehyde with chlorinated 2-position 失效制备具有氯化2-位的脂族醛三聚体的方法
公开(公告)号：US5416226A
公开(公告)日：1995-05-16
申请号：US97755
申请日：1993-07-26
IPC分类号： B01J23/06 , B01J23/14 , C07B61/00 , C07C45/55 , C07C45/60 , C07C45/63 , C07D323/04 , C07D323/06
CPC分类号： C07D323/04 , C07C45/55 , C07C45/60 , C07C45/63
摘要： A process for manufacturing a trimer of a low aliphatic aldehyde having 2-5 carbon atoms and the chlorinated 2-position is disclosed. The process comprises cyclically trimerizing said aliphatic aldehyde with chlorinated 2-position in the presence of a catalyst selected from the group consisting of metallic tin, metallic zinc, zeolite, and Lewis acids. It ensures easy separation of the catalyst from the target trimer and a high yield of the trimer. In addition, the unreacted raw material can be easily recovered.
摘要翻译： 公开了一种制备具有2-5个碳原子和氯化2-位的低级脂族醛的三聚物的方法。 该方法包括在选自金属锡，金属锌，沸石和路易斯酸的催化剂存在下，用氯化2-位使所述脂族醛循环三聚。 它确保了催化剂与目标三聚体的容易分离和高产率的三聚体。 此外，未反应的原料可以容易地回收。
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公开(公告)号：US5274131A
公开(公告)日：1993-12-28
申请号：US781101
申请日：1991-10-22
IPC分类号： C07C45/55 , C07C45/63 , C07D323/04 , C07D323/06
CPC分类号： C07D323/04 , C07C45/55 , C07C45/63
摘要： A novel compound, a 2-chloropropionaldehyde trimer and a process of producing a 2-chloropropionaldehyde trimer by adding concentrated sulfuric acid to an organic solvent containing 2-chloropropionaldehyde and stirring the mixture at a temperature of from -5.degree. C. to 15.degree. C. to carry out the reaction.
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公开(公告)号：US08957652B2
公开(公告)日：2015-02-17
申请号：US13330031
申请日：2011-12-19
申请人： Takashi Yamauchi
发明人： Takashi Yamauchi
IPC分类号： H02M3/156 , H03K17/082
CPC分类号： H05B33/0887 , H03K17/0822 , H03K2217/0027 , H05B33/0815 , H05B33/089
摘要： There is provided an output circuit for supplying an output current to a load coupled to an output terminal in response to an input signal. The output circuit includes an output transistor for supplying the output current to the output terminal, an output-drive circuit for driving the output transistor, a constant-current limiting circuit for generating a current control signal for limiting the output current to a predetermined current value, and a control circuit for implementing a control such that the output current is controlled on the basis of the current control signal if a voltage at the output terminal is at a predetermined voltage, or less after the input signal is supplied while the output transistor is driven by the output-drive circuit if the voltage at the output terminal is in excess of the predetermined voltage.
摘要翻译： 提供了一个输出电路，用于响应于输入信号向耦合到输出端子的负载提供输出电流。 输出电路包括用于向输出端子提供输出电流的输出晶体管，用于驱动输出晶体管的输出驱动电路，用于产生用于将输出电流限制到预定电流值的电流控制信号的恒流限制电路 以及控制电路，用于实现控制，使得如果输出端子处的电压在输入信号被提供之后输出端子处的电压处于预定电压以下时，则基于电流控制信号控制输出电流，同时输出晶体管为 如果输出端子处的电压超过预定电压，则由输出驱动电路驱动。
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公开(公告)号：US20130234087A1
公开(公告)日：2013-09-12
申请号：US13605917
申请日：2012-09-06
IPC分类号： H01L45/00
CPC分类号： H01L45/085 , H01L27/2463 , H01L45/1233 , H01L45/148 , H01L45/1675
摘要： A non-volatile resistance change device includes a first electrode made of a metallic element, a second electrode, a variable resistance layer formed between the first electrode and the second electrode, first wiring formed on the first electrode on a side opposite to the variable resistance layer, and second wiring formed on the second electrode on a side opposite to the variable resistance layer. If the width of the first wiring is represented as A (nm), the width of the second wiring represented as B (nm), and the distance between the first electrode and the second electrode represented as L0 (nm), the following equation is satisfied: 3 2 AB
摘要翻译： 非易失性电阻变化装置包括由金属元件构成的第一电极，第二电极，形成在第一电极和第二电极之间的可变电阻层，在与可变电阻相反的一侧形成在第一电极上的第一布线 层和在与可变电阻层相反的一侧形成在第二电极上的第二布线。 如果将第一布线的宽度表示为A（nm），则表示为B（nm）的第二布线的宽度以及表示为L0（nm）的第一电极和第二电极之间的距离，下式为 满意：3 2 AB
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公开(公告)号：US20100051906A1
公开(公告)日：2010-03-04
申请号：US12549140
申请日：2009-08-27
申请人： Takashi Yamauchi , Yoshifumi Nishi , Hiroto Honda , Kei Masunishi , Shinji Murai , Masumi Saitoh
发明人： Takashi Yamauchi , Yoshifumi Nishi , Hiroto Honda , Kei Masunishi , Shinji Murai , Masumi Saitoh
IPC分类号： H01L31/0352
CPC分类号： H01L27/14645 , H01L27/14683 , H01L31/0352
摘要： A semiconductor device for correcting an input signal and outputting a corrected signal are provided. The semiconductor device includes a semiconductor layer, a plurality of first conductors formed on one of faces of the semiconductor layer and serving as input terminals to which a signal is input, second conductors of the number larger than that of the first conductors at density higher than that of the first conductors, formed on the other face of the semiconductor layer, a high impurity concentration region provided on the semiconductor layer side of an interface between the second conductor and the semiconductor layer, an insulating layer formed on the other face, and a plurality of third conductors formed on the insulating layer and serving as output terminals for outputting the processed signal.
摘要翻译： 提供了用于校正输入信号并输出校正信号的半导体器件。 半导体器件包括半导体层，形成在半导体层的一个表面上并用作输入信号的输入端的多个第一导体，第二导体的数量大于第一导体的密度高于 在半导体层的另一面形成的第一导体的第一导体的高杂质浓度区域设置在第二导体和半导体层之间的界面的半导体层侧，形成在另一面上的绝缘层， 多个第三导体，形成在绝缘层上并用作用于输出处理信号的输出端。
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公开(公告)号：US20080230804A1
公开(公告)日：2008-09-25
申请号：US12036703
申请日：2008-02-25
IPC分类号： H01L27/092 , H01L21/8238 , H01L29/872 , H01L21/283
CPC分类号： H01L29/47 , H01L21/28518 , H01L21/76814 , H01L21/823814 , H01L21/823835 , H01L29/475
摘要： A semiconductor device having an electrode with reduced electrical contact resistance even where either electrons or holes are majority carriers is disclosed. This device has an n-type diffusion layer and a p-type diffusion layer in a top surface of a semiconductor substrate. The device also has first and second metal wires patterned to overlie the n-type and p-type diffusion layers, respectively, with a dielectric layer interposed therebetween, a first contact electrode for electrical connection between the n-type diffusion layer and the first metal wire, and a second contact electrode for connection between the p-type diffusion layer and the second metal wire. The first contact electrode's portion in contact with the n-type diffusion layer and the second contact electrode's portion contacted with the p-type diffusion layer are each formed of a first conductor that contains a metal and a second conductor containing a rare earth metal.
摘要翻译： 公开了一种半导体器件，其具有即使电子或空穴为多数载流子的具有降低的电接触电阻的电极。 该器件在半导体衬底的顶表面中具有n型扩散层和p型扩散层。 该装置还具有图案化的第一和第二金属线分别覆盖在n型和p型扩散层之间，介于其间的介电层，用于在n型扩散层和第一金属之间电连接的第一接触电极 电线和用于在p型扩散层和第二金属线之间连接的第二接触电极。 与n型扩散层接触的第一接触电极部分和与p型扩散层接触的第二接触电极部分分别由包含金属的第一导体和含有稀土金属的第二导体形成。
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公开(公告)号：US20080179752A1
公开(公告)日：2008-07-31
申请号：US11898295
申请日：2007-09-11
IPC分类号： H01L29/78 , H01L21/336 , H01L23/48
CPC分类号： H01L29/66795 , H01L21/26513 , H01L21/324 , H01L21/823807 , H01L21/823814 , H01L29/165 , H01L29/47 , H01L29/66507 , H01L29/6653 , H01L29/6659 , H01L29/66636 , H01L29/66643 , H01L29/7833 , H01L29/7848 , H01L29/785
摘要： A metal insulator semiconductor field effect transistor (MISFET) having a strained channel region is disclosed. Also disclosed is a method of fabricating a semiconductor device having a low-resistance junction interface. This fabrication method includes the step of forming a gate electrode above a silicon substrate with a gate insulator film being sandwiched therebetween. Then, form a pair of heavily-doped p (p+) type diffusion layers in or on the substrate surface at both sides of the gate electrode to a concentration of 5×1019 atoms/cm3 or more and yet less than or equal to 1×1021 atoms/cm3. Next, silicidize the p+-type layers by reaction with a metal in the state that each layer is applied a compressive strain.
摘要翻译： 公开了具有应变通道区域的金属绝缘体半导体场效应晶体管（MISFET）。 还公开了一种制造具有低电阻结界面的半导体器件的方法。 该制造方法包括在硅衬底上形成栅电极的步骤，其间夹有栅绝缘膜。 然后，在栅极两侧的衬底表面中或其上形成一对重掺杂的p（p + SUP +）型扩散层，使其浓度达到5×10 19 原子/ cm 3以上且小于或等于1×10 21原子/ cm 3。 接下来，在各层施加压缩应变的状态下，通过与金属反应来硅化p + + +层。
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公开(公告)号：US20070291412A1
公开(公告)日：2007-12-20
申请号：US11792148
申请日：2005-11-17
IPC分类号： G11B23/02
CPC分类号： B60R11/02 , G06K13/0875
摘要： An opening-closing mechanism for a record medium is arranged to include a moving body moves, on which an inserting slot and a revolving door are provided; a supporting means for causing the revolving door to support by the moving body in openable and closeable manner in the form of opening in; a movement transmission means for enabling an opening and closing operation of the revolving door on condition of the movement of the moving body; and a concave space movably receives therein the moving body.
摘要翻译： 一种用于记录介质的打开 - 关闭机构被设置成包括一个移动体移动，在其上设有一个插入槽和一个旋转门; 用于使旋转门以开启的形式以可打开和可关闭的方式由移动体支撑的支撑装置; 运动传递装置，用于在移动体的移动的条件下使得旋转门的打开和关闭操作; 并且可移动地容纳移动体的凹入空间。
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9.发明授权Method and apparatus for inspecting direct liquid fuel cell generator, and direct liquid fuel cell generator 有权用于检查直接液体燃料电池发生器的方法和装置，以及直接液化燃料电池发生器公开(公告)号：US07094485B2
公开(公告)日：2006-08-22
申请号：US10414155
申请日：2003-04-16
IPC分类号： H01M8/04
CPC分类号： H01M8/04186
摘要： The invention provides a method for inspecting a fuel cell that can simply inspect fuel cell characteristics.The method is an inspecting method for a direct methanol fuel cell generator comprising an anode electrode including an node catalyst layer, a cathode electrode including a cathode catalyst layer, and N pieces of cells having an electrolyte disposed between the anode electrode and the cathode electrode, for power generation by feeding an aqueous methanol solution to the anode electrode and an oxidant gas to the cathode electrode. The fuel cell generator is inspected by measuring voltage changes of the voltage V of one electromotive unit caused by generating a current density change ΔI or −ΔI (mA/cm2) satisfying the condition of 0.2≦ΔI≦5 in a finite current density I (mA/cm2) loaded on the plural electromotive units arbitrarily connected in series in the fuel cell generator under power generation during a time interval Δt (sec) satisfying the condition of 10−5≦Δt≦0.5.
摘要翻译： 本发明提供了一种用于检查能够简单地检查燃料电池特性的燃料电池的方法。 该方法是一种直接甲醇燃料电池发生器的检查方法，其包括包括节点催化剂层的阳极电极，包括阴极催化剂层的阴极电极和在阳极电极和阴极电极之间具有电解质的N个电池， 用于通过将甲醇水溶液供给到阳极电极和将氧化剂气体输送到阴极电极来发电。 通过测量一个电动单元的电压V的电压变化来检查燃料电池发生器，该电压变化是通过产生满足0.2≤ΔI的条件的电流密度变化ΔI或-DeltaI（mA / cm 2） 在满足下述条件的时间间隔Deltat（sec）的发电期间，负载在燃料电池发电机中串联任意连接的多个电动单元上的有限电流密度I（mA / cm 2）<5 条件为10 -5 <= Deltat <= 0.5。
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公开(公告)号：US06851181B2
公开(公告)日：2005-02-08
申请号：US10214460
申请日：2002-08-08
CPC分类号： B23P21/004 , Y10T29/42 , Y10T29/49004 , Y10T29/49082 , Y10T29/49829 , Y10T29/5313 , Y10T29/53174 , Y10T29/53187 , Y10T29/53365 , Y10T29/53409
摘要： An apparatus of two stories for manufacturing a non-resonance knock sensor has an assembly body stage positioned at a first floor for forming an assembly body in which a lower insulator, a lower terminal plate, a piezoelectric element, an upper terminal plate and an upper insulator are mounted on a cylindrical base, and process stages positioned at a second floor for fastening the assembly body with a nut to form a sensor main body, bending partly the lower and upper terminal plates of the sensor main body and connecting by welding a resistor between the lower and upper terminal plates which are partly bent in the sensor main body. Accordingly, its manufacturing line is compact and can be installed in smaller horizontal ground area.
摘要翻译： 用于制造非共振爆震传感器的两层装置具有位于第一层的组装主体台，用于形成组装体，其中下绝缘体，下端子板，压电元件，上端子板和上端 绝缘体安装在圆柱形基座上，处理台位于第二层，用于用螺母紧固组件主体以形成传感器主体，部分地弯曲传感器主体的下端和上端子板，并通过焊接电阻 在传感器主体中部分地弯曲的下端子板和上端子板之间。 因此，其生产线紧凑，可安装在较小的水平地面。
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