公开(公告)号：US07057744B2

公开(公告)日：2006-06-06

申请号：US10082520

申请日：2002-02-22

申请人： Mineo Nomoto ,  Takenori Hirose ,  Keiya Saito

发明人： Mineo Nomoto ,  Takenori Hirose ,  Keiya Saito

IPC分类号： G01B11/28

CPC分类号： B24B37/013 ,  B24B49/12 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/8422

摘要： A method for high-precision measurement of film thickness and the distribution of film thickness of a transparent film is disclosed. The method is performed during a CMP process, without being affected by the film thickness distribution among the LSI regions or on the semiconductor wafer surface. The film thickness is measured by specifying relatively level measurement regions, according to a characteristic quantity of the spectral waveform of the reflected light from the transparent film, such as the reflection intensity, frequency spectrum intensity. This permits highly accurate control of film thickness. The leveling process in CMP processing can be optimized on the basis of the film thickness distribution.

公开(公告)号：US06987874B2

公开(公告)日：2006-01-17

申请号：US10054274

申请日：2002-01-18

申请人： Takenori Hirose ,  Mineo Nomoto

发明人： Takenori Hirose ,  Mineo Nomoto

IPC分类号： G06K9/00

CPC分类号： G06T7/0004 ,  G06T2207/30148

摘要： A tool useful for defect analysis can be provided in which a surface image of the whole single die is detected, and the surface image of the whole detected die, information of defect position and a magnified image of a defect region are displayed together at a time so that the operator can intuitively grasp what circuit pattern the defect or the like is located on within a die.

公开(公告)号：US06794206B2

公开(公告)日：2004-09-21

申请号：US10232707

申请日：2002-09-03

申请人： Takenori Hirose ,  Mineo Nomoto ,  Hiroyuki Kojima ,  Hidemi Sato

发明人： Takenori Hirose ,  Mineo Nomoto ,  Hiroyuki Kojima ,  Hidemi Sato

IPC分类号： H01L2166

CPC分类号： B24B37/013 ,  B24B49/04 ,  B24B49/12

摘要： A method of polishing a film formed on a wafer includes steps of polishing a film formed on a surface of a wafer which is chucked by a wafer chuck and set on a polishing disk so that the film faces the polishing disk, irradiating a plurality of portions of the film under polishing process with lights having different wavelengths from one another through a plurality of holes formed in the polishing disk, detecting lights reflected from the plurality of portions of the film caused by the irradiation, evaluating a thickness distribution of the film from information of an intensity ratio of the detected reflected lights, and controlling a pushing pressure of the wafer chuck according to the evaluated thickness distribution under polishing process.

摘要翻译： 抛光形成在晶片上的膜的方法包括以下步骤：在由晶片卡盘夹持的晶片表面上形成的膜进行抛光，并将其设置在研磨盘上，使得该膜面向抛光盘，照射多个部分 通过形成在研磨盘中的多个孔彼此不同波长的光进行研磨处理，检测从照射引起的膜的多个部分反射的光，从信息中评价胶片的厚度分布 检测反射光的强度比，根据研磨过程中的评价厚度分布来控制晶片卡盘的推压。

公开(公告)号：US07119908B2

公开(公告)日：2006-10-10

申请号：US10082430

申请日：2002-02-22

申请人： Mineo Nomoto ,  Takenori Hirose ,  Keiya Saito

发明人： Mineo Nomoto ,  Takenori Hirose ,  Keiya Saito

IPC分类号： G01B11/02

CPC分类号： B24B37/013 ,  B24B49/12 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/8422

摘要： A manufacturing method and manufacturing device for high-precision thin film devices is disclosed, whereby the film thickness and film thickness distribution of a transparent film is measured to a high degree of accuracy during a CMP process without being affected by the film thickness distribution between LSI regions or within the semiconductor wafer surface generated by CMP processing. Film thickness is measured by specifying relatively level measurement regions, according to a characteristic quantity of the spectral waveform of the reflected light from the transparent film, such as the reflection intensity, frequency spectrum intensity, or the like, thereby permitting highly accurate control of film thickness. The leveling process in CMP processing can be optimized on the basis of the film thickness distribution. The film deposition conditions in the film deposition stage and the etching conditions in the etching stage can also be optimized. Accordingly, a high-precision semiconductor device can be manufactured.

摘要翻译： 公开了一种用于高精度薄膜器件的制造方法和制造装置，其中在CMP处理期间以高精度测量透明膜的膜厚度和膜厚度分布，而不受LSI之间的膜厚度分布的影响 区域或通过CMP处理产生的半导体晶片表面内。 根据来自透明膜的反射光的光谱波形的特征量，例如反射强度，频谱强度等，通过指定相对水平的测量区域来测量膜厚度，从而允许对膜的高精度控制 厚度。 可以根据膜厚分布优化CMP加工中的流平过程。 也可以优化膜沉积阶段的成膜条件和蚀刻阶段的蚀刻条件。 因此，可以制造高精度半导体器件。

公开(公告)号：US07020306B2

公开(公告)日：2006-03-28

申请号：US09774723

申请日：2001-02-01

申请人： Takenori Hirose ,  Hiroyuki Kojima ,  Mineo Nomoto ,  Susumu Aiuchi

发明人： Takenori Hirose ,  Hiroyuki Kojima ,  Mineo Nomoto ,  Susumu Aiuchi

IPC分类号： G06K9/00

CPC分类号： B24B37/20 ,  B24B49/12 ,  G01N21/41 ,  G01N21/55

摘要： The object of the present invention is to establish a technology for directly evaluating polishing pad surface conditions, to allow high-precision CMP process management, and to improve process throughput. The pad surface is illuminated with light. The intensity of reflected light or fluorescence from the illuminated area or an intensity distribution image is used directly evaluate the pad surface condition. Based on the results of this evaluation, conditioning conditions for a conditioner are optimized, thus allowing high-precision CMP processing while maintaining good pad surface conditions.

摘要翻译： 本发明的目的是建立一种用于直接评估抛光垫表面状态，允许高精度CMP处理管理并提高工艺生产能力的技术。 焊盘表面用光照亮。 使用来自照射区域的反射光或荧光的强度或强度分布图像直接评估焊盘表面状况。 根据该评价结果，对调理剂的调理条件进行优化，从而在保持良好的垫表面状态的同时进行高精度的CMP处理。

公开(公告)号：US06897079B2

公开(公告)日：2005-05-24

申请号：US09800495

申请日：2001-03-08

申请人： Takenori Hirose ,  Mineo Nomoto ,  Hiroyuki Kojima ,  Hidemi Sato

发明人： Takenori Hirose ,  Mineo Nomoto ,  Hiroyuki Kojima ,  Hidemi Sato

IPC分类号： B24B53/00 ,  B24B37/013 ,  B24B49/04 ,  B24B49/12 ,  B24B53/017 ,  H01L21/304 ,  H01L21/306 ,  H01L21/66 ,  H01L21/302

CPC分类号： B24B37/013 ,  B24B49/04 ,  B24B49/12

摘要： Laser sources output laser lights L1 and L2 having different wavelengths so as to increase an accuracy of an endpoint detection of polishing processing by enabling an accurate detection of a film thickness of a layer insulating film on a surface of a wafer to be polished by the CMP processing, the lights are emitted from a detection window via a beam splitter to the layer insulating film formed on the surface of the wafer to be polished by a pad, different optical detectors detect interference lights corresponding to the laser lights L1 and L2 reflected and generated from a surface of the layer insulating film and a pattern under the surface via the detection window, the beam splitter, and a dichroic mirror, the detection results are supplied to a film thickness evaluation unit 7, a film thickness of the layer insulation film is detected on the basis of a relationship between intensities of the reflected interference lights to the laser lights L1 and L2 or the intensity ratio, and an endpoint of polishing processing is determined when the film thickness is equal to a predetermined value.

摘要翻译： 激光源输出具有不同波长的激光L 1和L 2 2，以便通过能够精确地检测到膜厚度的精确检测来提高抛光加工的终点检测的精度 通过CMP处理在待抛光的晶片的表面上的层绝缘膜，光从检测窗通过分束器发射到通过垫进行抛光的晶片表面上形成的层绝缘膜，不同的 光检测器检测对应于从层绝缘膜的表面反射和产生的激光L 1和L 2 2的干涉光，以及通过检测窗口在表面下方的图案 分束器和分色镜，将检测结果提供给膜厚评估单元7，根据反射干涉光的强度与激光束之间的关系来检测层间绝缘膜的膜厚度 ts L 1和L 2 2或强度比，并且当膜厚度等于预定值时确定抛光处理的终点。

公开(公告)号：US20050117164A1

公开(公告)日：2005-06-02

申请号：US10082430

申请日：2002-02-22

申请人： Mineo Nomoto ,  Takenori Hirose ,  Keiya Saito

发明人： Mineo Nomoto ,  Takenori Hirose ,  Keiya Saito

IPC分类号： B24B37/013 ,  B24B49/12 ,  G01B11/06 ,  G01N21/84 ,  H01L21/304 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768 ,  G01B9/02

CPC分类号： B24B37/013 ,  B24B49/12 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/8422

摘要： The present invention provides a manufacturing method and manufacturing device for high-precision thin film devices, whereby the film thickness and film thickness distribution of a transparent film is measured to a high degree of accuracy during processing, and the film thickness can be controlled with high precision during CMP processing, by accurately measuring the film thickness of the uppermost layer, without being affected by the film thickness distribution between LSI regions or within the semiconductor wafer surface generated by CMP processing. The field of view and measurement position used for measuring the film thickness of a transparent film during processing are set such that the measured area is not affected by the film thickness distribution of the actual device patterns subjected to CMP processing. Moreover, the film thickness is measured by specifying relatively level measurement regions, according to a characteristic quantity of the spectral waveform of the reflected light from the transparent film, such as the reflection intensity, frequency spectrum intensity, or the like, thereby permitting highly accurate control of film thickness. Consequently, the leveling process in CMP processing can be optimized on the basis of the film thickness distribution, the film deposition conditions in the film deposition stage and the etching conditions in the etching stage can also be optimized, and hence a high-precision semiconductor device can be manufactured.

摘要翻译： 本发明提供了一种用于高精度薄膜器件的制造方法和制造装置，由此在加工期间以高精度测量透明膜的膜厚度和膜厚度分布，并且可以高度控制膜厚度 通过精确地测量最上层的膜厚度，而不受LSI区域之间的膜厚分布或由CMP处理产生的半导体晶片表面内的膜厚分布的影响，在CMP处理期间的精度。 设置用于测量处理过程中透明膜的膜厚度的视场和测量位置，使得测量面积不受经过CMP处理的实际器件图案的膜厚度分布的影响。 此外，根据来自透明膜的反射光的光谱波形的特征量，例如反射强度，频谱强度等，通过指定相对水平的测量区域来测量膜厚度，由此允许高精度 控制膜厚度。 因此，可以基于膜厚分布，成膜阶段中的成膜条件和蚀刻阶段的蚀刻条件来优化CMP处理中的流平处理，并且因此可以优化高精度半导体器件 可以制造。

公开(公告)号：US20050183282A1

公开(公告)日：2005-08-25

申请号：US10986878

申请日：2004-11-15

申请人： Masahiro Watanabe ,  Takenori Hirose ,  Yukio Kembo ,  Yoshiyuki Nagano ,  Takafumi Morimoto

发明人： Masahiro Watanabe ,  Takenori Hirose ,  Yukio Kembo ,  Yoshiyuki Nagano ,  Takafumi Morimoto

IPC分类号： H01L21/28 ,  G01B3/22 ,  G01B11/06 ,  G01N13/16 ,  G12B21/08 ,  H01L21/3065 ,  H01L21/66 ,  H01L21/768 ,  H01L23/522

CPC分类号： G01Q30/02 ,  G01B11/0625 ,  G01Q30/04

摘要： The invention relates to a method and an apparatus for measuring the depths of many fine holes formed in the surface of a sample by etching. Positional information on a plurality of hole patterns is acquired by scanning with a stylus the surface of the sample in which the hole patterns are formed by etching, the depths of the plurality of hole patterns are measured by scanning with the stylus bottom faces of the plurality of hole patterns and the surface of the sample in the respective vicinities of the hole patterns on the basis of the positional information, and information on distribution of the depths of the plurality of hole patterns is displayed on a screen on the basis of information on the measured depths of the plurality of hole patterns and the positional information on each of the hole patterns.

摘要翻译： 本发明涉及通过蚀刻来测量在样品表面形成的许多细孔的深度的方法和装置。 通过用触笔扫描通过蚀刻形成孔图案的样品的表面来获取多个孔图案的位置信息，通过用多个孔的触针底面进行扫描来测量多个孔图案的深度 基于位置信息在孔图案的各附近的孔图案和样品的表面，并且关于多个孔图案的深度分布的信息基于关于该图案的信息显示在屏幕上 多个孔图案的测量深度和每个孔图案上的位置信息。

公开(公告)号：US08621659B2

公开(公告)日：2013-12-31

申请号：US13462845

申请日：2012-05-03

申请人： Kaifeng Zhang ,  Takenori Hirose ,  Masahiro Watanabe ,  Tetsuya Matsui ,  Tsuneo Nakagomi ,  Teruaki Tokutomi

发明人： Kaifeng Zhang ,  Takenori Hirose ,  Masahiro Watanabe ,  Tetsuya Matsui ,  Tsuneo Nakagomi ,  Teruaki Tokutomi

IPC分类号： G01Q60/36 ,  G01Q60/42 ,  G01Q60/54 ,  G01Q70/16

CPC分类号： G01Q60/36 ,  G01Q60/42 ,  G01Q60/54 ,  G01Q60/56 ,  G01Q70/12 ,  G01Q70/14 ,  G01Q70/16

摘要： In a method of manufacturing this cantilever for the magnetic force microscope, a magnetic film is formed on a probe at a tip of the cantilever for the magnetic force microscope. When a non-magnetic rigid protective film is formed around the probe, the film is formed from the front of the probe of the cantilever for the magnetic force microscope at an angle (15° to 45°) and from the back of the probe of the cantilever for the magnetic force microscope in two directions each at an angle in a range of (15° to 30°).

摘要翻译： 在用于磁力显微镜的这种悬臂的制造方法中，在用于磁力显微镜的悬臂的尖端处的探针上形成磁性膜。 当在探针周围形成非磁性刚性保护膜时，该膜从磁力显微镜的悬臂的探针的前部以15°至45°的角度和从探头背面形成 用于磁力显微镜的悬臂在两个方向上各自以（15°至30°）的范围内的角度。

公开(公告)号：US20120307605A1

公开(公告)日：2012-12-06

申请号：US13482065

申请日：2012-05-29

申请人： Kaifeng Zhang ,  Takenori Hirose ,  Masahiro Watanabe ,  Shinji Homma ,  Tsuneo Nakagomi ,  Teruaki Tokutomi ,  Toshihiko Nakata ,  Takehiro Tachizaki

发明人： Kaifeng Zhang ,  Takenori Hirose ,  Masahiro Watanabe ,  Shinji Homma ,  Tsuneo Nakagomi ,  Teruaki Tokutomi ,  Toshihiko Nakata ,  Takehiro Tachizaki

IPC分类号： G11B13/04

CPC分类号： G11B5/455 ,  G11B2005/0021

摘要： In a method and an apparatus for inspecting a thermally assisted magnetic recording head element, a specimen is mounted on a table movable in a plane of a scanning probe microscope device, evanescent light is generated from a portion of light emission of evanescent light of the specimen, scattered light of the evanescent light is detected by moving the table in the plane while a cantilever of the scanning probe microscope having a probe is vertically vibrated in the vicinity of a surface of the specimen, and an intensity distribution of the evanescent light emitted from the portion of light emission of evanescent light or a surface profile of the portion of light emission of evanescent light of the specimen is inspected using position information of generation of the evanescent light based on the detected scattered light.

摘要翻译： 在用于检查热辅助磁记录头元件的方法和装置中，将样本安装在可在扫描探针显微镜装置的平面中移动的台上，从所述样本的渐逝光的发光部分产生ev逝光 通过在平面中移动台来检测ev逝光的散射光，同时具有探针的扫描探针显微镜的悬臂在试样的表面附近垂直振动，并且从from射光发射的ev逝光的强度分布 使用基于检测到的散射光的ev逝光的产生的位置信息来检查ev逝光的发光部分或试样的ev逝光的发光部分的表面轮廓。