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    NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATION THEREOF
    3.
    发明申请
    NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATION THEREOF 有权
    氮化物半导体发光器件及其制造方法

    公开(公告)号：US20110136276A1

    公开(公告)日：2011-06-09

    申请号：US12979059

    申请日：2010-12-27

    申请人： Takeshi KAMIKAWA ,  Eiji Yamada ,  Masahiro Araki ,  Yoshika Kaneko

    发明人： Takeshi KAMIKAWA ,  Eiji Yamada ,  Masahiro Araki ,  Yoshika Kaneko

    IPC分类号： H01L21/306

    CPC分类号： B82Y20/00 ,  H01L33/007 ,  H01S5/0213 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

    摘要： A nitride semiconductor laser device uses a substrate with low defect density, contains reduced strains inside a nitride semiconductor film, and thus offers a satisfactorily long useful life. On a GaN substrate (10) with a defect density as low as 106 cm−2 or less, a stripe-shaped depressed portion (16) is formed by etching. On this substrate (10), a nitride semiconductor film (11) is grown, and a laser stripe (12) is formed off the area right above the depressed portion (16). With this structure, the laser stripe (12) is free from strains, and the semiconductor laser device offers a long useful life. Moreover, the nitride semiconductor film (11) develops reduced cracks, resulting in a greatly increased yield rate.

    摘要翻译： 氮化物半导体激光器件使用具有低缺陷密度的衬底，在氮化物半导体膜内包含减少的应变，从而提供令人满意的长使用寿命。 在缺陷密度低至106cm -2以下的GaN衬底（10）上，通过蚀刻形成条形凹部（16）。 在该基板（10）上生长氮化物半导体膜（11），在凹部（16）正上方的区域形成激光条纹（12）。 利用这种结构，激光条纹（12）没有应变，半导体激光器件使用寿命长。 此外，氮化物半导体膜（11）产生减少的裂纹，导致大大提高的屈服率。

    NITRIDE SEMICONDUCTOR DEVICE AND SEMICONDUCTOR OPTICAL DEVICE
    4.
    发明申请
    NITRIDE SEMICONDUCTOR DEVICE AND SEMICONDUCTOR OPTICAL DEVICE 审中-公开
    氮化物半导体器件和半导体光器件

    公开(公告)号：US20120049156A1

    公开(公告)日：2012-03-01

    申请号：US13211966

    申请日：2011-08-17

    申请人： Masataka OHTA ,  Takeshi KAMIKAWA

    发明人： Masataka OHTA ,  Takeshi KAMIKAWA

    IPC分类号： H01L33/06

    CPC分类号： H01L33/32 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/02516 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/16

    摘要： A nitride semiconductor device which improves the light emission efficiency is provided. The nitride semiconductor light emitting device includes the nitride semiconductor layer having a growth surface and the nitride semiconductor layer (layered structure) which is formed on the growth surface of the semiconductor layer, and includes an active layer that has a quantum well structure. The active layer includes a quantum well layer including the nitride semiconductor containing Al. Further, the growth surface of the semiconductor layer includes a plane having an off angle at least in an a axis direction with respect to an m-plane, and the off angle in the a axis direction is larger than an off angle in a c axis direction.

    摘要翻译： 提供了提高发光效率的氮化物半导体器件。 氮化物半导体发光器件包括具有生长表面的氮化物半导体层和形成在半导体层的生长表面上的氮化物半导体层（层状结构），并且包括具有量子阱结构的有源层。 有源层包括包含含有Al的氮化物半导体的量子阱层。 此外，半导体层的生长面包括至少在相对于m面的轴向上具有偏角的平面，并且在轴方向上的偏离角大于ac轴方向的偏离角 。