利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

116 条记录 (耗时 0.023 秒)

    Nitride semiconductor light-emitting device and method for fabrication thereof
    2.
    发明申请
    Nitride semiconductor light-emitting device and method for fabrication thereof 有权
    氮化物半导体发光器件及其制造方法

    公开(公告)号：US20050025204A1

    公开(公告)日：2005-02-03

    申请号：US10902481

    申请日：2004-07-30

    申请人： Takeshi Kamikawa ,  Eiji Yamada ,  Masahiro Araki ,  Yoshika Kaneko

    发明人： Takeshi Kamikawa ,  Eiji Yamada ,  Masahiro Araki ,  Yoshika Kaneko

    IPC分类号： H01S5/343 ,  H01S5/00 ,  H01S5/02 ,  H01S5/22 ,  H01S5/223

    CPC分类号： B82Y20/00 ,  H01L33/007 ,  H01S5/0213 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

    摘要： A nitride semiconductor laser device uses a substrate with low defect density, contains reduced strains inside a nitride semiconductor film, and thus offers a satisfactorily long useful life. On a GaN substrate (10) with a defect density as low as 106 cm−2 or less, a stripe-shaped depressed portion (16) is formed by etching. On this substrate (10), a nitride semiconductor film (11) is grown, and a laser stripe (12) is formed off the area right above the depressed portion (16). With this structure, the laser stripe (12) is free from strains, and the semiconductor laser device offers a long useful life. Moreover, the nitride semiconductor film (11) develops reduced cracks, resulting in a greatly increased yield rate.

    摘要翻译： 氮化物半导体激光器件使用具有低缺陷密度的衬底，在氮化物半导体膜内包含减少的应变，从而提供令人满意的长使用寿命。 在缺陷密度低至10 -6 cm -2以下的GaN衬底（10）上，通过蚀刻形成条形凹部（16）。 在该基板（10）上生长氮化物半导体膜（11），在凹部（16）正上方的区域形成激光条纹（12）。 利用这种结构，激光条纹（12）没有应变，半导体激光器件使用寿命长。 此外，氮化物半导体膜（11）产生减少的裂纹，导致大大提高的屈服率。

    Nitride semiconductor light-emitting device and method for fabrication thereof
    3.
    发明授权
    Nitride semiconductor light-emitting device and method for fabrication thereof 有权
    氮化物半导体发光器件及其制造方法

    公开(公告)号：US07903708B2

    公开(公告)日：2011-03-08

    申请号：US10902481

    申请日：2004-07-30

    申请人： Takeshi Kamikawa ,  Eiji Yamada ,  Masahiro Araki ,  Yoshika Kaneko

    发明人： Takeshi Kamikawa ,  Eiji Yamada ,  Masahiro Araki ,  Yoshika Kaneko

    IPC分类号： H01S5/00

    CPC分类号： B82Y20/00 ,  H01L33/007 ,  H01S5/0213 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

    摘要： A nitride semiconductor laser device uses a substrate with low defect density, contains reduced strains inside a nitride semiconductor film, and thus offers a satisfactorily long useful life. On a GaN substrate (10) with a defect density as low as 106 cm−2 or less, a stripe-shaped depressed portion (16) is formed by etching. On this substrate (10), a nitride semiconductor film (11) is grown, and a laser stripe (12) is formed off the area right above the depressed portion (16). With this structure, the laser stripe (12) is free from strains, and the semiconductor laser device offers a long useful life. Moreover, the nitride semiconductor film (11) develops reduced cracks, resulting in a greatly increased yield rate.

    摘要翻译： 氮化物半导体激光器件使用具有低缺陷密度的衬底，在氮化物半导体膜内包含减少的应变，从而提供令人满意的长使用寿命。 在缺陷密度低至106cm -2以下的GaN衬底（10）上，通过蚀刻形成条形凹部（16）。 在该基板（10）上生长氮化物半导体膜（11），在凹部（16）正上方的区域形成激光条纹（12）。 利用这种结构，激光条纹（12）没有应变，半导体激光器件使用寿命长。 此外，氮化物半导体膜（11）产生减少的裂纹，导致大大提高的屈服率。

    Nitride semiconductor device and fabrication method thereof
    4.
    发明申请
    Nitride semiconductor device and fabrication method thereof 有权
    氮化物半导体器件及其制造方法

    公开(公告)号：US20060094244A1

    公开(公告)日：2006-05-04

    申请号：US11263036

    申请日：2005-11-01

    申请人： Eiji Yamada ,  Takeshi Kamikawa ,  Masahiro Araki

    发明人： Eiji Yamada ,  Takeshi Kamikawa ,  Masahiro Araki

    IPC分类号： H01L21/311

    CPC分类号： H01S5/32341 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L33/16 ,  H01L33/32

    摘要： A nitride semiconductor device is provided that prevents development of cracks, that has nitride semiconductor thin films with uniform thicknesses and good growth surface flatness, and is thus consistent in characteristics, and that can be fabricated at a satisfactory yield. In this nitride semiconductor device, the nitride semiconductor thin films are grown on a substrate having an off-angle between a direction normal to the surface of ridges and the crystal direction . This helps either reduce or intentionally promote diffusion or movement of the atoms or molecules of a source material of the nitride semiconductor thin films through migration thereof. As a result, a nitride semiconductor growth layer with good surface flatness can be formed, and thus a nitride semiconductor device with satisfactory characteristics can be obtained.

    摘要翻译： 提供了防止具有均匀厚度的氮化物半导体薄膜和良好的生长面平坦度的裂纹的发展的氮化物半导体装置，因此具有一致的特性，并且可以以令人满意的产量制造。 在这种氮化物半导体器件中，氮化物半导体薄膜在垂直于脊表面的方向与晶体方向<0001>之间具有偏角的衬底上生长。 这有助于通过其移动来减少或有意地促进氮化物半导体薄膜的源材料的原子或分子的扩散或移动。 结果，可以形成具有良好表面平坦度的氮化物半导体生长层，因此可以获得具有令人满意的特性的氮化物半导体器件。

    Nitride semiconductor device
    8.
    发明授权
    Nitride semiconductor device 有权
    氮化物半导体器件

    公开(公告)号：US08368183B2

    公开(公告)日：2013-02-05

    申请号：US11263036

    申请日：2005-11-01

    申请人： Eiji Yamada ,  Takeshi Kamikawa ,  Masahiro Araki

    发明人： Eiji Yamada ,  Takeshi Kamikawa ,  Masahiro Araki

    IPC分类号： H01L29/04

    CPC分类号： H01S5/32341 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L33/16 ,  H01L33/32

    摘要： A nitride semiconductor device is provided that prevents development of cracks, that has nitride semiconductor thin films with uniform thicknesses and good growth surface flatness, and is thus consistent in characteristics, and that can be fabricated at a satisfactory yield. In this nitride semiconductor device, the nitride semiconductor thin films are grown on a substrate having an off-angle between a direction normal to the surface of ridges and the crystal direction . This helps either reduce or intentionally promote diffusion or movement of the atoms or molecules of a source material of the nitride semiconductor thin films through migration thereof. As a result, a nitride semiconductor growth layer with good surface flatness can be formed, and thus a nitride semiconductor device with satisfactory characteristics can be obtained.

    摘要翻译： 提供了防止具有均匀厚度的氮化物半导体薄膜和良好的生长面平坦度的裂纹的发展的氮化物半导体装置，因此具有一致的特性，并且可以以令人满意的产量制造。 在这种氮化物半导体器件中，氮化物半导体薄膜在垂直于脊表面的方向与晶体方向<0001>之间具有偏角的衬底上生长。 这有助于通过其移动来减少或有意地促进氮化物半导体薄膜的源材料的原子或分子的扩散或移动。 结果，可以形成具有良好表面平坦度的氮化物半导体生长层，因此可以获得具有令人满意的特性的氮化物半导体器件。