摘要:
Provided is an image forming apparatus having a preview function and an original paper size automatic detection function, capable of displaying a preview of original image data immediately next a detected original paper size has been switched with a simple operation. On receipt of an operation of a next skip button by a user, a preview image display control portion refers to a paper size recording table and displays a preview of image data of a top page in the group (unit) next to the group in which the preview of the image data of the top page is currently displayed, the group being different in a paper size from the other group.
摘要:
A secondary-battery protection circuit is configured to, in response to detecting that a first switching circuit is turned on and a second switching circuit is turned on, supply a first output voltage to a first load between a first terminal and a second terminal; and supply a third output voltage to a second load between the first terminal and a third terminal, the third output voltage indicating the sum of the first output voltage and a second output voltage, the second output voltage corresponding to a voltage across a second secondary battery. In response to detecting that the first switching circuit is turned off and the second switching circuit is turned on, the secondary-battery protection circuit is configured to stop supplying the first output voltage to the first load; and stop supplying the third output voltage via the first terminal and the third terminal.
摘要:
A semiconductor integrated circuit includes a first circuit, a second circuit, a memory circuit having a plurality of flip-flops, a storage unit, a signal generating unit to produce an operation mode setting signal, a control circuit configured to cause the memory circuit to operate such that the plurality of flip-flops holds a value for setting characteristics of the first circuit when the operation mode setting signal indicates a first operation mode, and configured to cause the memory circuit to operate as a counter to measure a time length used in the second circuit when the operation mode setting signal indicates a second operation mode, and a setting circuit configured to cause trimming data stored in the storage unit to set the characteristic of the first circuit when the operation mode setting signal indicates the second operation mode, the trimming data corresponding to the value held by the memory circuit.
摘要:
A secondary battery protection circuit includes a potential-difference control circuit. The potential-difference control circuit provides, when overcharge is detected by an overcharge detection circuit, a control terminal of a charge control transistor with feedback on a potential-difference detection signal to control a potential difference between an electrode of a secondary battery and a terminal for a load and charger. The potential-difference control circuit provides, when overdischarge is detected by an overdischarge detection circuit, a control terminal of each of the charge control transistor and a discharge control transistor with feedback on the potential-difference detection signal to control the potential difference.
摘要:
A secondary-battery protection circuit is configured to, in response to detecting that a first switching circuit is turned on and a second switching circuit is turned on, supply a first output voltage to a first load between a first terminal and a second terminal; and supply a third output voltage to a second load between the first terminal and a third terminal, the third output voltage indicating the sum of the first output voltage and a second output voltage, the second output voltage corresponding to a voltage across a second secondary battery. In response to detecting that the first switching circuit is turned off and the second switching circuit is turned on, the secondary-battery protection circuit is configured to stop supplying the first output voltage to the first load; and stop supplying the third output voltage via the first terminal and the third terminal.
摘要:
A battery pack includes a secondary battery, a secondary battery protecting integrated circuit configured to protect the secondary battery, at least one sensor configured to output a fault signal indicating sensing of a fault in the battery pack or an electronic apparatus including the battery pack, a detecting circuit configured to output a fault detection signal indicating a detection of the fault signal, a delay circuit configured to output a pulse delaying from the fault detection signal, and a counter configured to count a number of generating the pulse, the counter having at least N bits (N is an integer greater than 1), wherein the counter stops an operation until a count of 2(N-1).
摘要:
A semiconductor memory device in an embodiment comprises memory cells, each of the memory cells disposed between a first line and a second line and having a variable resistance element and a switching element connected in series. The variable resistance element includes a variable resistance layer configured to change in resistance value thereof between a low-resistance state and a high-resistance state. The variable resistance layer is configured by a transition metal oxide. A ratio of transition metal and oxygen configuring the transition metal oxide varies between 1:1 and 1:2 along a first direction directed from the first line to the second line.
摘要:
To provide a control unit including a touch panel display capable of presenting preview display of multiple pages of document images on the display panel, the touch panel display includes: a binding position indicating controller; a binding process preview displaying controller that displays preview images of recording paper bound at the specified position; a paper binding position-linked scrolling display switching controller that, when the binding position in the printed paper is modified, switches the direction of scrolling preview display so as to be suited to the recording paper bound at the modified binding position.
摘要:
According to one embodiment, a non-volatile memory device includes a stacked structure and a voltage application portion. The stacked structure includes a memory portion, and an electrode stacked with the memory portion and having a surface having a portion facing the memory portion. The voltage application portion applies a voltage to the memory portion to cause a change in a resistance in the memory portion to store information. The surface includes a first region and a second region. The first region contains at least one of a metallic element, Si, Ga, and As. The first region is conductive. The second region contains at least one of the metallic element, Si, Ga, and As, and has a content ratio of nonmetallic element higher than a content ratio of nonmetallic element in the first region. At least one of the first region and the second region has an anisotropic shape on the surface.
摘要:
A battery protection circuit for protecting a secondary battery, the battery protection circuit not having a CPU, includes a non-volatile memory into which characteristics data determining protective characteristics of the battery protection circuit are writable; and a protection operation circuit which performs a protection operation of the secondary battery based on the characteristics data read out of the non-volatile memory.