摘要:
A laser machining apparatus is provided with: a workpiece support unit; a machining head; and a machining head moving unit. The workpiece support unit includes: an end support part that supports a width end of a workpiece; and an inside support part that supports an inside portion of the workpiece in a width direction. The end support part is movable in a longitudinal direction independently from the inside support part in response to a movement of the machining head.
摘要:
A laser machining apparatus is provided with: a workpiece support unit; a machining head; and a machining head moving unit. The workpiece support unit includes: an end support part that supports a width end of a workpiece; and an inside support part that supports an inside portion of the workpiece in a width direction. The end support part is movable in a longitudinal direction independently from the inside support part in response to a movement of the machining head.
摘要:
A transmitting section of the present invention initiates transmission of a second video continuously after completing transmission of a first video being transmitted, in a case that a reproduction position of the first video being transmitted is beyond an end point of the first video, when a video recording start time of a second video stored in a video storage section and a video recording end time of the first video being transmitted coincide within a predetermined time difference.
摘要:
A semiconductor device includes a MISFET comprising: a semiconductor layer including a semiconductor region formed therein; a gate insulating film formed above the semiconductor region, and including a metal oxide layer containing a metal and oxygen, the metal contained in the metal oxide layer being at least one selected from Hf and Zr, the metal oxide layer further including at least one element selected from the group consisting of Ru, Cr, Os, V, Tc, and Nb, the metal oxide layer having sites that capture or release charges formed by inclusion of the element, density of the element in the metal oxide layer being in the range of 1×1015 cm−3 to 2.96×1020 cm−3, the sites being distributed to have a peak closer to the semiconductor region than to a center of the metal oxide layer; and a gate electrode formed on the gate insulating film.
摘要:
An eddy current testing probe has a flexible substrate adapted to face to a surface of a test article, a plurality of coils which are fixed to the flexible substrate and energized one of which is capable of being changed sequentially, a pressing member for pressing the substrate toward the test article, an elastic member arranged between the substrate and the pressing member, and a movement limiting member for limiting a movement of the pressing member toward the test article.
摘要:
A graphite spheroidizing agent capable of spheroidizing graphite while preventing formation of chunky graphite is provided. The graphite spheroidizing agent of the present invention comprising silicon, magnesium, calcium and rare earth elements, wherein the graphite spheroidizing agent contains rare earth elements of 0.6 to 3.0 mass % and a calcium content of 1.3 to 4.0 mass %, respectively, relative to the total amount thereof, and a percentage of lanthanum in the rare earth elements is 50 mass % or more.
摘要:
Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.
摘要:
An eddy current testing probe has a flexible substrate adapted to face to a surface of a test article, a plurality of coils which are fixed to the flexible substrate and energized one of which is capable of being changed sequentially, a pressing member for pressing the substrate toward the test article, an elastic member arranged between the substrate and the pressing member, and a movement limiting member for limiting a movement of the pressing member toward the test article.
摘要:
Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.
摘要:
A diagnosis system having sensors for supervising a plant, signal processors for processing signals of the sensors, and a state quantity arithmetic operation unit. The state quantity arithmetic operation unit calculates a quantity of state expressing the environment of the plant on the basis of supervisory information inputted through the signal processors. A state quantity prediction unit predictively calculates a quantity of state after a predetermined time on the basis of the quantity of state, supervisory information and a time change of the quantity of state inputted through the state quantity arithmetic operation unit. A future event prediction unit predicts a future event on the basis of predicted information of the quantity of state inputted through the state quantity prediction unit. An image information processor converts the quantity of state given by the state quantity arithmetic operation unit into image information and indicates the image information on a display unit. An image information processor converts the predicted quantity of state after the predetermined time, given by the state quantity prediction unit, into image information and indicates the image information on a display unit. An image information processor converts the future event predicted by the future event prediction unit into image information and indicates the image information on a display unit.