公开(公告)号：US07185068B2

公开(公告)日：2007-02-27

申请号：US09808045

申请日：2001-03-15

申请人： Takuya Kobayashi ,  Seiji Ura ,  Hiromi Wada

发明人： Takuya Kobayashi ,  Seiji Ura ,  Hiromi Wada

IPC分类号： G06F15/16

CPC分类号： G06F17/30899 ,  H04L67/02 ,  H04L69/18 ,  H04L69/329

摘要： In a content retrieval device, a browser section generates a retrieval request for sub-content data to be retrieved presently. A protocol control section determines which communication path between a first communication path or a second communication path should be used prior to the reception of the sub-content data which is specified by the browser section. If the protocol control section determines that the first communication path is to be used, a first communication control section receives the sub-content data which is specified by the browser section from a content server. If the protocol control section determines that the second communication path is to be used, a second communication control section receives the sub-content data from the content server. In this way, the content retrieval device can select a suitable connection method prior to the reception of data.

摘要翻译： 在内容检索装置中，浏览器部生成目前要检索的子内容数据的检索请求。 协议控制部分在接收到由浏览器部分指定的子内容数据之前，确定应当使用第一通信路径或第二通信路径之间的哪个通信路径。 如果协议控制部分确定要使用第一通信路径，则第一通信控制部分从内容服务器接收由浏览器部分指定的子内容数据。 如果协议控制部分确定要使用第二通信路径，则第二通信控制部分从内容服务器接收子内容数据。 以这种方式，内容检索装置可以在接收数据之前选择合适的连接方法。

公开(公告)号：US08039333B2

公开(公告)日：2011-10-18

申请号：US12359974

申请日：2009-01-26

申请人： Akio Kaneko ,  Seiji Inumiya ,  Tomonori Aoyama ,  Takuya Kobayashi

发明人： Akio Kaneko ,  Seiji Inumiya ,  Tomonori Aoyama ,  Takuya Kobayashi

IPC分类号： H01L21/336 ,  H01L21/8234

CPC分类号： H01L21/823807 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/823431 ,  H01L21/82385 ,  H01L21/823857 ,  H01L27/0886 ,  H01L27/0922 ,  H01L29/1037 ,  H01L29/1054 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/66651 ,  H01L29/66795 ,  H01L29/7834 ,  H01L29/7851 ,  H01L29/7853

摘要： A method of fabricating a semiconductor device according to one embodiment includes: forming a SiGe crystal layer on a semiconductor substrate, the SiGe crystal layer having a first plane and a second plane inclined with respect to the first plane; forming an amorphous Si film on the SiGe crystal layer; crystallizing a portion located adjacent to the first and second planes of the amorphous Si film by applying heat treatment using the first and second planes of the SiGe crystal layer as a seed, thereby forming a Si crystal layer; selectively removing or thinning a portion of the amorphous Si film that is not crystallized by the heat treatment; applying oxidation treatment to a surface of the Si crystal layer, thereby forming a gate insulating film on the surface of the Si crystal layer; and forming a gate electrode on the gate insulating film.

摘要翻译： 根据一个实施例的制造半导体器件的方法包括：在半导体衬底上形成SiGe晶体层，所述SiGe晶体层具有第一平面和相对于第一平面倾斜的第二平面; 在SiGe晶体层上形成非晶Si膜; 通过使用SiGe晶体层的第一和第二平面作为种子进行热处理，使位于非晶Si膜的第一和第二平面附近的部分结晶，从而形成Si晶体层; 通过热处理选择性去除或稀薄未结晶的非晶Si膜的一部分; 对Si晶体层的表面进行氧化处理，从而在Si晶体层的表面上形成栅极绝缘膜; 以及在所述栅极绝缘膜上形成栅电极。

公开(公告)号：US07335562B2

公开(公告)日：2008-02-26

申请号：US11494736

申请日：2006-07-28

申请人： Takuya Kobayashi ,  Katsuyuki Sekine ,  Tomonori Aoyama ,  Hiroshi Tomita

发明人： Takuya Kobayashi ,  Katsuyuki Sekine ,  Tomonori Aoyama ,  Hiroshi Tomita

IPC分类号： H01L21/336

CPC分类号： H01L21/02148 ,  C23C16/401 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/31645 ,  H01L21/823462 ,  H01L21/823857 ,  H01L29/517 ,  H01L29/66553 ,  H01L29/6656

摘要： A method of manufacturing a semiconductor device includes forming a trench in an interlayer dielectric film on the semiconductor substrate, the trench reaching a semiconductor substrate and having a sidewall made of silicon nitride film; depositing a gate insulation film made of a HfSiO film at a temperature within a range of 200 degrees centigrade to 260 degrees centigrade, so that the HfSiO film is deposited on the semiconductor substrate which is exposed at a bottom surface of the trench without depositing the HfSiO film on the silicon nitride film; and filling the trench with a gate electrode made of metal.

摘要翻译： 制造半导体器件的方法包括在半导体衬底上的层间电介质膜中形成沟槽，沟槽到达半导体衬底并具有由氮化硅膜制成的侧壁; 在200摄氏度至260摄氏度的温度范围内沉积由HfSiO膜制成的栅极绝缘膜，使得HfSiO膜沉积在暴露于沟槽底表面的半导体衬底上，而不沉积HfSiO 膜上的氮化硅膜; 并用金属制成的栅电极填充沟槽。

公开(公告)号：US20070278587A1

公开(公告)日：2007-12-06

申请号：US11798068

申请日：2007-05-10

申请人： Tomonori Aoyama ,  Tomohiro Saito ,  Katsuyuki Sekine ,  Kazuaki Nakajima ,  Motoyuki Sato ,  Takuya Kobayashi

发明人： Tomonori Aoyama ,  Tomohiro Saito ,  Katsuyuki Sekine ,  Kazuaki Nakajima ,  Motoyuki Sato ,  Takuya Kobayashi

IPC分类号： H01L29/94

CPC分类号： H01L21/26513 ,  H01L21/26506 ,  H01L21/28079 ,  H01L21/28097 ,  H01L21/28202 ,  H01L21/2822 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/518 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/785

摘要： This disclosure concerns a semiconductor device comprising a semiconductor substrate; a gate dielectric film provided on the semiconductor substrate and containing Hf, Si, and O or containing Zr, Si and O; a gate electrode of an n-channel FET provided on the gate dielectric film, the gate electrode being made of nickel silicide containing nickel at a higher content than silicon; an aluminum layer provided at a bottom portion of the gate electrode of the n-channel FET; and a gate electrode of a p-channel FET provided on the gate dielectric film, the gate electrode being made of nickel silicide containing nickel at a higher content than silicon.

摘要翻译： 本公开涉及包括半导体衬底的半导体器件; 设置在半导体衬底上并含有Hf，Si和O或含有Zr，Si和O的栅极电介质膜; 设置在所述栅极电介质膜上的n沟道FET的栅电极，所述栅电极由含有比所述硅含量高的镍的镍硅化物制成; 设置在n沟道FET的栅电极的底部的铝层; 以及设置在所述栅极电介质膜上的p沟道FET的栅电极，所述栅电极由镍含量高于硅的镍的硅化镍制成。

公开(公告)号：US20070093032A1

公开(公告)日：2007-04-26

申请号：US11494736

申请日：2006-07-28

申请人： Takuya Kobayashi ,  Katsuyuki Sekine ,  Tomonori Aoyama ,  Hiroshi Tomita

发明人： Takuya Kobayashi ,  Katsuyuki Sekine ,  Tomonori Aoyama ,  Hiroshi Tomita

IPC分类号： H01L21/336

CPC分类号： H01L21/02148 ,  C23C16/401 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/31645 ,  H01L21/823462 ,  H01L21/823857 ,  H01L29/517 ,  H01L29/66553 ,  H01L29/6656

摘要： A method of manufacturing a semiconductor device includes forming a trench in an interlayer dielectric film on the semiconductor substrate, the trench reaching a semiconductor substrate and having a sidewall made of silicon nitride film; depositing a gate insulation film made of a HfSiO film at a temperature within a range of 200 degrees centigrade to 260 degrees centigrade, so that the HfSiO film is deposited on the semiconductor substrate which is exposed at a bottom surface of the trench without depositing the HfSiO film on the silicon nitride film; and filling the trench with a gate electrode made of metal.

摘要翻译： 制造半导体器件的方法包括在半导体衬底上的层间电介质膜中形成沟槽，沟槽到达半导体衬底并具有由氮化硅膜制成的侧壁; 在200摄氏度至260摄氏度的温度范围内沉积由HfSiO膜制成的栅极绝缘膜，使得HfSiO膜沉积在暴露于沟槽底表面的半导体衬底上，而不沉积HfSiO 膜上的氮化硅膜; 并用金属制成的栅电极填充沟槽。

公开(公告)号：US08022486B2

公开(公告)日：2011-09-20

申请号：US11882012

申请日：2007-07-30

申请人： Katsuyuki Sekine ,  Tomonori Aoyama ,  Takuya Kobayashi

发明人： Katsuyuki Sekine ,  Tomonori Aoyama ,  Takuya Kobayashi

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L21/823842 ,  H01L21/02148 ,  H01L21/02178 ,  H01L21/02271 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28097 ,  H01L21/3145 ,  H01L21/3162 ,  H01L21/31645 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66507 ,  H01L29/66545

摘要： A semiconductor device includes a semiconductor substrate, and a p-channel MOS transistor provided on the semiconductor substrate, the p-channel MOS transistor comprising a first gate dielectric film including Hf, a second gate dielectric film provided on the first gate dielectric film and including aluminum oxide, and a first metal silicide gate electrode provided on the second gate dielectric film.

摘要翻译： 半导体器件包括半导体衬底和设置在半导体衬底上的p沟道MOS晶体管，所述p沟道MOS晶体管包括包括Hf的第一栅极电介质膜，设置在第一栅极电介质膜上的第二栅极电介质膜， 氧化铝和设置在第二栅极电介质膜上的第一金属硅化物栅电极。

公开(公告)号：US07883974B2

公开(公告)日：2011-02-08

申请号：US12585555

申请日：2009-09-17

申请人： Takuya Kobayashi ,  Katsuyuki Sekine ,  Tomonori Aoyama ,  Hiroshi Tomita

发明人： Takuya Kobayashi ,  Katsuyuki Sekine ,  Tomonori Aoyama ,  Hiroshi Tomita

IPC分类号： H01L21/336

CPC分类号： H01L21/02148 ,  C23C16/401 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/31645 ,  H01L21/823462 ,  H01L21/823857 ,  H01L29/517 ,  H01L29/66553 ,  H01L29/6656

摘要： A method of manufacturing a semiconductor device includes forming a trench in an interlayer dielectric film on the semiconductor substrate, the trench reaching a semiconductor substrate and having a sidewall made of silicon nitride film; depositing a gate insulation film made of a HfSiO film at a temperature within a range of 200 degrees centigrade to 260 degrees centigrade, so that the HfSiO film is deposited on the semiconductor substrate which is exposed at a bottom surface of the trench without depositing the HfSiO film on the silicon nitride film; and filling the trench with a gate electrode made of metal.

摘要翻译： 制造半导体器件的方法包括在半导体衬底上的层间电介质膜中形成沟槽，沟槽到达半导体衬底并具有由氮化硅膜制成的侧壁; 在200摄氏度至260摄氏度的温度范围内沉积由HfSiO膜制成的栅极绝缘膜，使得HfSiO膜沉积在暴露于沟槽底表面的半导体衬底上，而不沉积HfSiO 膜上的氮化硅膜; 并用金属制成的栅电极填充沟槽。

公开(公告)号：US20100065918A1

公开(公告)日：2010-03-18

申请号：US12561862

申请日：2009-09-17

申请人： Daisuke Ikeno ,  Tomonori Aoyama ,  Kazuaki Nakajima ,  Seiji Inumiya ,  Takashi Shimizu ,  Takuya Kobayashi

发明人： Daisuke Ikeno ,  Tomonori Aoyama ,  Kazuaki Nakajima ,  Seiji Inumiya ,  Takashi Shimizu ,  Takuya Kobayashi

IPC分类号： H01L27/092 ,  H01L21/8238

CPC分类号： H01L21/823807 ,  H01L21/823828

摘要： A semiconductor device includes a semiconductor substrate containing a p-type diffusion layer and an n-type diffusion layer which are separated by an element separation film; a gate insulating film formed on or above the p-type diffusion layer and the n-type diffusion layer of the semiconductor substrate, respectively; a gate electrode containing a metallic film and formed on the gate insulating film; a Ge inclusion formed at an interface between the gate insulating film and the metallic film; and a silicon-containing layer formed on the metallic film.

摘要翻译： 半导体器件包括由元件分离膜分离的包含p型扩散层和n型扩散层的半导体衬底; 分别形成在所述p型扩散层和所述半导体衬底的n型扩散层上或之上的栅绝缘膜; 含有金属膜并形成在栅极绝缘膜上的栅电极; 形成在栅极绝缘膜和金属膜之间的界面处的Ge夹杂物; 以及形成在金属膜上的含硅层。

公开(公告)号：US07608498B2

公开(公告)日：2009-10-27

申请号：US12003802

申请日：2008-01-02

申请人： Takuya Kobayashi ,  Katsuyuki Sekine ,  Tomonori Aoyama ,  Hiroshi Tomita

发明人： Takuya Kobayashi ,  Katsuyuki Sekine ,  Tomonori Aoyama ,  Hiroshi Tomita

IPC分类号： H01L21/336

CPC分类号： H01L21/02148 ,  C23C16/401 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/31645 ,  H01L21/823462 ,  H01L21/823857 ,  H01L29/517 ,  H01L29/66553 ,  H01L29/6656

摘要： A method of manufacturing a semiconductor device includes forming a trench in an interlayer dielectric film on the semiconductor substrate, the trench reaching a semiconductor substrate and having a sidewall made of silicon nitride film; depositing a gate insulation film made of a HfSiO film at a temperature within a range of 200 degrees centigrade to 260 degrees centigrade, so that the HfSiO film is deposited on the semiconductor substrate which is exposed at a bottom surface of the trench without depositing the HfSiO film on the silicon nitride film; and filling the trench with a gate electrode made of metal.

摘要翻译： 制造半导体器件的方法包括在半导体衬底上的层间电介质膜中形成沟槽，沟槽到达半导体衬底并具有由氮化硅膜制成的侧壁; 在200摄氏度至260摄氏度的温度范围内沉积由HfSiO膜制成的栅极绝缘膜，使得HfSiO膜沉积在暴露于沟槽底表面的半导体衬底上，而不沉积HfSiO 膜上的氮化硅膜; 并用金属制成的栅电极填充沟槽。

公开(公告)号：US07583921B2

公开(公告)日：2009-09-01

申请号：US11599401

申请日：2006-11-15

申请人： Takuya Kobayashi ,  Masaki Suto

发明人： Takuya Kobayashi ,  Masaki Suto

IPC分类号： G03G15/08 ,  G03G15/01 ,  G03G15/20

CPC分类号： G03G15/754 ,  G03G15/168 ,  G03G2215/00139 ,  G03G2215/1623

摘要： An image forming apparatus for forming an image on a recording medium, includes: a belt-like member that is capable of cyclic rotation; a plurality of support members, along which the belt-like member is stretched; a first member that is located along an inner face of the belt-like member; and a regulator that is located opposite the inner face of the belt-like member, wherein the regulator maintains a cyclic rotating state for the belt-like member while ensuring the first member is separated by a gap from the belt-like member.

摘要翻译： 一种用于在记录介质上形成图像的图像形成装置，包括：能够循环旋转的带状构件; 多个支撑构件，带状构件沿着该支撑构件被拉伸; 沿所述带状构件的内表面定位的第一构件; 以及与带状构件的内表面相对的调节器，其中调节器为带状构件保持循环旋转状态，同时确保第一构件与带状构件间隔开间隔。