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公开(公告)号：US20100065918A1
公开(公告)日：2010-03-18
申请号：US12561862
申请日：2009-09-17
申请人： Daisuke Ikeno , Tomonori Aoyama , Kazuaki Nakajima , Seiji Inumiya , Takashi Shimizu , Takuya Kobayashi
发明人： Daisuke Ikeno , Tomonori Aoyama , Kazuaki Nakajima , Seiji Inumiya , Takashi Shimizu , Takuya Kobayashi
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L21/823807 , H01L21/823828
摘要： A semiconductor device includes a semiconductor substrate containing a p-type diffusion layer and an n-type diffusion layer which are separated by an element separation film; a gate insulating film formed on or above the p-type diffusion layer and the n-type diffusion layer of the semiconductor substrate, respectively; a gate electrode containing a metallic film and formed on the gate insulating film; a Ge inclusion formed at an interface between the gate insulating film and the metallic film; and a silicon-containing layer formed on the metallic film.
摘要翻译： 半导体器件包括由元件分离膜分离的包含p型扩散层和n型扩散层的半导体衬底; 分别形成在所述p型扩散层和所述半导体衬底的n型扩散层上或之上的栅绝缘膜; 含有金属膜并形成在栅极绝缘膜上的栅电极; 形成在栅极绝缘膜和金属膜之间的界面处的Ge夹杂物; 以及形成在金属膜上的含硅层。
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公开(公告)号：US08198155B2
公开(公告)日：2012-06-12
申请号：US12693985
申请日：2010-01-26
申请人： Daisuke Ikeno , Tomonori Aoyama , Kazuaki Nakajima , Seiji Inumiya , Takashi Shimizu , Takuya Kobayashi
发明人： Daisuke Ikeno , Tomonori Aoyama , Kazuaki Nakajima , Seiji Inumiya , Takashi Shimizu , Takuya Kobayashi
IPC分类号： H01L21/8234 , H01L21/8238 , H01L29/51
CPC分类号： H01L21/823842 , H01L21/28088 , H01L21/823807 , H01L21/82385 , H01L29/1054 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/6659
摘要： A semiconductor device according to an embodiment of the present invention includes an N-type transistor formed in a first region on a substrate, and a P-type transistor formed in a second region on the substrate. The device includes the substrate, a first gate insulation film formed on the substrate in the first and second regions, and containing silicon, a second gate insulation film formed on the first gate insulation film in the first region, and containing first metal and oxygen, a third gate insulation film formed on the first gate insulation film in the second region, and containing second metal different from the first metal and oxygen, a fourth gate insulation film formed on the second and third gate insulation films in the first and second regions, and containing hafnium, and a gate electrode layer formed on the fourth gate insulation film in the first and second regions, and containing metal and nitrogen, a thickness of the gate electrode layer formed in the second region being greater than a thickness of the gate electrode layer formed in the first region.
摘要翻译： 根据本发明的实施例的半导体器件包括形成在衬底上的第一区域中的N型晶体管和形成在衬底上的第二区域中的P型晶体管。 该器件包括衬底，形成在第一和第二区域的衬底上并含有硅的第一栅极绝缘膜，形成在第一区域中的第一栅极绝缘膜上并且包含第一金属和氧的第二栅极绝缘膜， 形成在所述第二区域中的所述第一栅极绝缘膜上并且包含不同于所述第一金属和氧的第二金属的第三栅极绝缘膜，形成在所述第一和第二区域中的所述第二和第三栅极绝缘膜上的第四栅极绝缘膜， 并且含有铪，以及形成在第一和第二区域中的第四栅极绝缘膜上并且包含金属和氮的栅极电极层，在第二区域中形成的栅电极层的厚度大于栅电极的厚度 层形成在第一区域中。
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公开(公告)号：US20100187612A1
公开(公告)日：2010-07-29
申请号：US12693985
申请日：2010-01-26
申请人： Daisuke IKENO , Tomonori Aoyama , Kazuaki Nakajima , Seiji Inumiya , Takashi Shimizu , Takuya Kobayashi
发明人： Daisuke IKENO , Tomonori Aoyama , Kazuaki Nakajima , Seiji Inumiya , Takashi Shimizu , Takuya Kobayashi
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L21/823842 , H01L21/28088 , H01L21/823807 , H01L21/82385 , H01L29/1054 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/6659
摘要： A semiconductor device according to an embodiment of the present invention includes an N-type transistor formed in a first region on a substrate, and a P-type transistor formed in a second region on the substrate. The device includes the substrate, a first gate insulation film formed on the substrate in the first and second regions, and containing silicon, a second gate insulation film formed on the first gate insulation film in the first region, and containing first metal and oxygen, a third gate insulation film formed on the first gate insulation film in the second region, and containing second metal different from the first metal and oxygen, a fourth gate insulation film formed on the second and third gate insulation films in the first and second regions, and containing hafnium, and a gate electrode layer formed on the fourth gate insulation film in the first and second regions, and containing metal and nitrogen, a thickness of the gate electrode layer formed in the second region being greater than a thickness of the gate electrode layer formed in the first region.
摘要翻译： 根据本发明的实施例的半导体器件包括形成在衬底上的第一区域中的N型晶体管和形成在衬底上的第二区域中的P型晶体管。 该器件包括衬底，形成在第一和第二区域的衬底上并含有硅的第一栅极绝缘膜，形成在第一区域中的第一栅极绝缘膜上并且包含第一金属和氧的第二栅极绝缘膜， 形成在所述第二区域中的所述第一栅极绝缘膜上并且包含不同于所述第一金属和氧的第二金属的第三栅极绝缘膜，形成在所述第一和第二区域中的所述第二和第三栅极绝缘膜上的第四栅极绝缘膜， 并且含有铪，以及形成在第一和第二区域中的第四栅极绝缘膜上并且包含金属和氮的栅极电极层，在第二区域中形成的栅电极层的厚度大于栅电极的厚度 层形成在第一区域中。
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公开(公告)号：US07989896B2
公开(公告)日：2011-08-02
申请号：US12612238
申请日：2009-11-04
IPC分类号： H01L27/11
CPC分类号： H01L21/823462 , H01L21/823412 , H01L21/823807 , H01L21/823857 , H01L27/0629 , H01L29/517
摘要： A method of fabricating a semiconductor device according to one embodiment includes: laying out a first region, a second region, a third region and a fourth region on a semiconductor substrate by forming an element isolation region in the semiconductor substrate; forming a first insulating film on the first region and the second region; forming a first semiconductor film on the first insulating film; forming a second insulating film and an aluminum oxide film thereon on the fourth region after forming of the first semiconductor film; forming a third insulating film and a lanthanum oxide film thereon on the third region after forming of the first semiconductor film; forming a high dielectric constant film on the aluminum oxide film and the lanthanum oxide film; forming a metal film on the high dielectric constant film; forming a second semiconductor film on the first semiconductor film and the metal film; and patterning the first insulating film, the first semiconductor film, the second insulating film, the aluminum oxide film, the third insulating film, the lanthanum oxide film, the high dielectric constant film, the metal film and the second semiconductor film.
摘要翻译： 根据一个实施例的制造半导体器件的方法包括：通过在半导体衬底中形成元件隔离区，在半导体衬底上铺设第一区域，第二区域，第三区域和第四区域; 在所述第一区域和所述第二区域上形成第一绝缘膜; 在所述第一绝缘膜上形成第一半导体膜; 在形成第一半导体膜之后的第四区域上形成第二绝缘膜和氧化铝膜; 在形成第一半导体膜之后，在第三区域上形成第三绝缘膜和氧化镧膜; 在氧化铝膜和氧化镧膜上形成高介电常数膜; 在高介电常数膜上形成金属膜; 在所述第一半导体膜和所述金属膜上形成第二半导体膜; 以及图案化第一绝缘膜，第一半导体膜，第二绝缘膜，氧化铝膜，第三绝缘膜，氧化镧膜，高介电常数膜，金属膜和第二半导体膜。
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公开(公告)号：US20100133626A1
公开(公告)日：2010-06-03
申请号：US12612238
申请日：2009-11-04
IPC分类号： H01L27/06 , H01L21/28 , H01L21/8236
CPC分类号： H01L21/823462 , H01L21/823412 , H01L21/823807 , H01L21/823857 , H01L27/0629 , H01L29/517
摘要： A method of fabricating a semiconductor device according to one embodiment includes: laying out a first region, a second region, a third region and a fourth region on a semiconductor substrate by forming an element isolation region in the semiconductor substrate; forming a first insulating film on the first region and the second region; forming a first semiconductor film on the first insulating film; forming a second insulating film and an aluminum oxide film thereon on the fourth region after forming of the first semiconductor film; forming a third insulating film and a lanthanum oxide film thereon on the third region after forming of the first semiconductor film; forming a high dielectric constant film on the aluminum oxide film and the lanthanum oxide film; forming a metal film on the high dielectric constant film; forming a second semiconductor film on the first semiconductor film and the metal film; and patterning the first insulating film, the first semiconductor film, the second insulating film, the aluminum oxide film, the third insulating film, the lanthanum oxide film, the high dielectric constant film, the metal film and the second semiconductor film.
摘要翻译： 根据一个实施例的制造半导体器件的方法包括：通过在半导体衬底中形成元件隔离区，在半导体衬底上铺设第一区域，第二区域，第三区域和第四区域; 在所述第一区域和所述第二区域上形成第一绝缘膜; 在所述第一绝缘膜上形成第一半导体膜; 在形成第一半导体膜之后的第四区域上形成第二绝缘膜和氧化铝膜; 在形成第一半导体膜之后，在第三区域上形成第三绝缘膜和氧化镧膜; 在氧化铝膜和氧化镧膜上形成高介电常数膜; 在高介电常数膜上形成金属膜; 在所述第一半导体膜和所述金属膜上形成第二半导体膜; 以及图案化第一绝缘膜，第一半导体膜，第二绝缘膜，氧化铝膜，第三绝缘膜，氧化镧膜，高介电常数膜，金属膜和第二半导体膜。
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公开(公告)号：US20070278587A1
公开(公告)日：2007-12-06
申请号：US11798068
申请日：2007-05-10
申请人： Tomonori Aoyama , Tomohiro Saito , Katsuyuki Sekine , Kazuaki Nakajima , Motoyuki Sato , Takuya Kobayashi
发明人： Tomonori Aoyama , Tomohiro Saito , Katsuyuki Sekine , Kazuaki Nakajima , Motoyuki Sato , Takuya Kobayashi
IPC分类号： H01L29/94
CPC分类号： H01L21/26513 , H01L21/26506 , H01L21/28079 , H01L21/28097 , H01L21/28202 , H01L21/2822 , H01L21/823842 , H01L21/823857 , H01L29/513 , H01L29/518 , H01L29/6656 , H01L29/6659 , H01L29/785
摘要： This disclosure concerns a semiconductor device comprising a semiconductor substrate; a gate dielectric film provided on the semiconductor substrate and containing Hf, Si, and O or containing Zr, Si and O; a gate electrode of an n-channel FET provided on the gate dielectric film, the gate electrode being made of nickel silicide containing nickel at a higher content than silicon; an aluminum layer provided at a bottom portion of the gate electrode of the n-channel FET; and a gate electrode of a p-channel FET provided on the gate dielectric film, the gate electrode being made of nickel silicide containing nickel at a higher content than silicon.
摘要翻译： 本公开涉及包括半导体衬底的半导体器件; 设置在半导体衬底上并含有Hf，Si和O或含有Zr，Si和O的栅极电介质膜; 设置在所述栅极电介质膜上的n沟道FET的栅电极，所述栅电极由含有比所述硅含量高的镍的镍硅化物制成; 设置在n沟道FET的栅电极的底部的铝层; 以及设置在所述栅极电介质膜上的p沟道FET的栅电极，所述栅电极由镍含量高于硅的镍的硅化镍制成。
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公开(公告)号：US20100176456A1
公开(公告)日：2010-07-15
申请号：US12683050
申请日：2010-01-06
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L21/823857 , H01L21/823864 , H01L29/518
摘要： A semiconductor device includes a semiconductor substrate including a P-type semiconductor region, and an N channel MOSFET formed in the P-type semiconductor region, the N channel MOSFET including an insulating film of silicon oxide film or silicon oxynitride film formed on the semiconductor substrate, a gate insulating film including hafnium and formed on the insulating film, a lanthanum oxide film having a film thickness not larger than a predetermined value and formed between the gate insulating film and insulating film, and a gate electrode including a titanium nitride film having a N/Ti atomic ratio less than 1.
摘要翻译： 半导体器件包括包括P型半导体区域的半导体衬底和形成在P型半导体区域中的N沟道MOSFET，N沟道MOSFET包括形成在半导体衬底上的氧化硅膜或氧氮化硅膜的绝缘膜 包括铪并形成在所述绝缘膜上的栅极绝缘膜，形成在所述栅极绝缘膜和绝缘膜之间的膜厚度不大于预定值的氧化镧膜，以及包括氮化钛膜的栅电极，所述氮化钛膜具有 N / Ti原子比小于1。
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公开(公告)号：US07521309B2
公开(公告)日：2009-04-21
申请号：US11948344
申请日：2007-11-30
申请人： Akio Kaneko , Motoyuki Sato , Katsuyuki Sekine , Tomohiro Saito , Kazuaki Nakajima , Tomonori Aoyama
发明人： Akio Kaneko , Motoyuki Sato , Katsuyuki Sekine , Tomohiro Saito , Kazuaki Nakajima , Tomonori Aoyama
IPC分类号： H01L21/336
CPC分类号： H01L29/517 , H01L21/28097 , H01L21/3215 , H01L21/823814 , H01L21/823835 , H01L21/823842 , H01L29/66507
摘要： A method of manufacturing a semiconductor device having a MOSFET of a first conductivity type and a MOSFET of a second conductivity type different from the first conductivity type formed on a semiconductor substrate, the method has: forming a gate insulating film; forming a first gate electrode layer, and forming a second gate electrode layer; forming a first metal containing layer on said first gate electrode layer and said second gate electrode layer; forming a second metal containing layer for preventing diffusion of a metal on said first metal containing layer; forming a third metal containing layer on said second gate electrode layer from which said first metal containing layer and said second metal containing layer are selectively removed, the third metal containing layer having a thickness different from the thickness of said first metal containing layer in a case where the third metal containing layer contains the same metal or alloy as the metal or alloy contained in said first metal containing layer; and performing a thermal processing, thereby causing reaction between the metal contained in said first metal containing layer and said first gate electrode layer to convert said first gate electrode layer into an alloy and causing reaction between the metal contained in said third metal containing layer and said second gate electrode layer to convert said second gate electrode layer into an alloy, thereby forming gate electrodes of different compositions.
摘要翻译： 一种制造具有第一导电类型的MOSFET的半导体器件的方法和形成在半导体衬底上的与第一导电类型不同的第二导电类型的MOSFET，该方法具有：形成栅极绝缘膜; 形成第一栅电极层，形成第二栅电极层; 在所述第一栅电极层和所述第二栅电极层上形成第一含金属层; 形成用于防止金属在所述第一金属含有层上的扩散的第二含金属层; 在所述第二栅电极层上形成第三金属含有层，从所述第二金属含有层和所述第二金属含有层被选择性地除去，所述第三金属含有层的厚度与所述第一金属含有层的厚度不同 其中所述第三含金属层包含与所述第一含金属层中所含的金属或合金相同的金属或合金; 并进行热处理，从而使包含在所述第一金属含有层中的金属与所述第一栅极电极层之间产生反应，将所述第一栅电极层转换成合金，并引起所述第三金属含有层中含有的金属与所述 第二栅极电极层，以将所述第二栅电极层转换成合金，从而形成不同组成的栅电极。
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公开(公告)号：US20080138969A1
公开(公告)日：2008-06-12
申请号：US11948344
申请日：2007-11-30
申请人： Akio Kaneko , Motoyuki Sato , Katsuyuki Sekine , Tomohiro Saito , Kazuaki Nakajima , Tomonori Aoyama
发明人： Akio Kaneko , Motoyuki Sato , Katsuyuki Sekine , Tomohiro Saito , Kazuaki Nakajima , Tomonori Aoyama
IPC分类号： H01L21/28
CPC分类号： H01L29/517 , H01L21/28097 , H01L21/3215 , H01L21/823814 , H01L21/823835 , H01L21/823842 , H01L29/66507
摘要： A method of manufacturing a semiconductor device having a MOSFET of a first conductivity type and a MOSFET of a second conductivity type different from the first conductivity type formed on a semiconductor substrate, the method has: forming a gate insulating film; forming a first gate electrode layer, and forming a second gate electrode layer; forming a first metal containing layer on said first gate electrode layer and said second gate electrode layer; forming a second metal containing layer for preventing diffusion of a metal on said first metal containing layer; forming a third metal containing layer on said second gate electrode layer from which said first metal containing layer and said second metal containing layer are selectively removed, the third metal containing layer having a thickness different from the thickness of said first metal containing layer in a case where the third metal containing layer contains the same metal or alloy as the metal or alloy contained in said first metal containing layer; and performing a thermal processing, thereby causing reaction between the metal contained in said first metal containing layer and said first gate electrode layer to convert said first gate electrode layer into an alloy and causing reaction between the metal contained in said third metal containing layer and said second gate electrode layer to convert said second gate electrode layer into an alloy, thereby forming gate electrodes of different compositions.
摘要翻译： 一种制造具有第一导电类型的MOSFET的半导体器件的方法和形成在半导体衬底上的与第一导电类型不同的第二导电类型的MOSFET，该方法具有：形成栅极绝缘膜; 形成第一栅电极层，形成第二栅电极层; 在所述第一栅电极层和所述第二栅电极层上形成第一含金属层; 形成用于防止金属在所述第一金属含有层上的扩散的第二含金属层; 在所述第二栅电极层上形成第三金属含有层，从所述第二金属含有层和所述第二金属含有层选择性地除去所述第三金属含有层，所述第三金属含有层的厚度与所述第一金属含有层的厚度不同 其中所述第三含金属层包含与所述第一含金属层中所含的金属或合金相同的金属或合金; 并进行热处理，从而使包含在所述第一金属含有层中的金属与所述第一栅极电极层之间产生反应，将所述第一栅电极层转换成合金，并引起所述第三金属含有层中含有的金属与所述 第二栅极电极层，以将所述第二栅电极层转换成合金，从而形成不同组成的栅极。
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公开(公告)号：US08668243B2
公开(公告)日：2014-03-11
申请号：US13382467
申请日：2010-07-13
申请人： Satoshi Komiya , Kazuhito Sugimoto , Hirofumi Kondou , Yuichi Morinaka , Tomohiro Koyahata , Masato Inoue , Kenichiro Koizumi , Hitoshi Takagi , Yuji Ishihara , Kazuaki Nakajima
发明人： Satoshi Komiya , Kazuhito Sugimoto , Hirofumi Kondou , Yuichi Morinaka , Tomohiro Koyahata , Masato Inoue , Kenichiro Koizumi , Hitoshi Takagi , Yuji Ishihara , Kazuaki Nakajima
IPC分类号： B62D35/00
CPC分类号： B62D35/00 , B60Q1/0017
摘要： A vehicle boundary layer air flow control structure is provided with a vehicle body and a side view mirror. The vehicle body includes an exterior contoured surface with an air flow deflector. The side view mirror is attached to the vehicle body to provide a diagonally rearward direction to be viewed from a driver's seat. The air flow deflector has a downward air flow guiding surface provided in a vehicle body region of the exterior contoured surface of the vehicle body along which an air flow heading toward the side view mirror passes. The downward air flow guiding surface extends in an air flow direction of the air flow with respect to the side view mirror to divert the air flow underneath the side view mirror.
摘要翻译： 车辆边界层气流控制结构设置有车体和侧视镜。 车身包括具有空气导流板的外部轮廓表面。 侧视镜附接到车体以提供从驾驶员座椅观察的斜向后方向。 空气导流器具有设置在车身外部轮廓表面的车身区域中的朝向侧视镜通过的空气流的向下空气流引导表面。 向下的空气流引导表面相对于侧视镜在空气流的空气流动方向上延伸以转移侧视镜下面的空气流。
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