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公开(公告)号：US20100321363A1
公开(公告)日：2010-12-23
申请号：US12518005
申请日：2008-06-19
IPC分类号： G09G3/28
CPC分类号： G09G3/294 , G09G3/2965
摘要： A plasma display panel driving device includes an electrode driving unit for generating a drive pulse to be applied to an electrode of a plasma display panel. The electrode driving unit has a plurality of switches. At least one of the plurality of switches is a switch device including a dual-gate semiconductor device. The dual-gate semiconductor device 10 has a semiconductor multilayer 13 formed on a substrate 11 and made of a nitride semiconductor or a silicon carbide semiconductor, a source electrode 16 and a drain electrode 17 formed and spaced apart from each other on the semiconductor multilayer 13, and a first gate electrode 18A and a second gate electrode 18B formed between the source electrode 16 and the drain electrode 17, successively from the source electrode 16 side.
摘要翻译： 等离子体显示面板驱动装置包括用于产生施加到等离子体显示面板的电极的驱动脉冲的电极驱动单元。 电极驱动单元具有多个开关。 多个开关中的至少一个是包括双栅极半导体器件的开关器件。 双栅极半导体器件10具有形成在基板11上并由氮化物半导体或碳化硅半导体形成的半导体层叠体13，在半导体层叠体13上形成并隔开的源电极16和漏电极17 以及从源极电极16侧依次形成在源极电极16和漏极电极17之间的第一栅极电极18A和第二栅极电极18B。
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公开(公告)号：US07595680B2
公开(公告)日：2009-09-29
申请号：US12020163
申请日：2008-01-25
IPC分类号： H03K17/687
CPC分类号： H03K17/687 , H01L29/1066 , H01L29/2003 , H01L29/4175 , H01L29/41758 , H01L29/7787 , H03K17/302 , H03K17/567 , H03K17/6877 , H03K17/74 , H03K17/78 , H03K17/795 , H03K2217/0036
摘要： A bidirectional switch includes a field-effect transistor having a first ohmic electrode, a second ohmic electrode and a gate electrode, and a control circuit for controlling between a conduction state and a cut-off state by applying a bias voltage to the gate electrode. The control circuit applies the bias voltage from the first ohmic electrode as a reference when a potential of the second ohmic electrode is higher than the potential of the first ohmic electrode, and applies the bias voltage from the second ohmic electrode as a reference when the potential of the second electrode is lower than the potential of the first ohmic electrode.
摘要翻译： 双向开关包括具有第一欧姆电极，第二欧姆电极和栅电极的场效应晶体管，以及通过向栅电极施加偏压来控制导通状态和截止状态的控制电路。 当第二欧姆电极的电位高于第一欧姆电极的电位时，控制电路施加来自第一欧姆电极的偏置电压作为参考，并且当第二欧姆电极的电位为电位时施加来自第二欧姆电极的偏置电压作为参考 的第二电极的电位低于第一欧姆电极的电位。
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公开(公告)号：US08203376B2
公开(公告)日：2012-06-19
申请号：US12445390
申请日：2007-11-20
申请人： Tatsuo Morita , Manabu Yanagihara , Hidetoshi Ishida , Yasuhiro Uemoto , Hiroaki Ueno , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Tatsuo Morita , Manabu Yanagihara , Hidetoshi Ishida , Yasuhiro Uemoto , Hiroaki Ueno , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H03K17/687
CPC分类号： H01L29/7787 , H01L27/0605 , H01L29/0619 , H01L29/1066 , H01L29/2003 , H01L29/432 , H01L29/739 , H01L29/8124
摘要： A semiconductor device includes a semiconductor layer stack 13 formed on a substrate 11 and having a channel region, a first electrode 16A and a second electrode 16B formed spaced apart from each other on the semiconductor layer stack 13, a first gate electrode 18A formed between the first electrode 16A and the second electrode 16B, and a second gate electrode 18B formed between the first gate electrode 18A and the second electrode 16B. A first control layer 19A having a p-type conductivity is formed between the semiconductor layer stack 13 and the first gate electrode 18A.
摘要翻译： 半导体器件包括形成在衬底11上并具有沟道区的半导体层堆叠13，在半导体层叠层13上彼此隔开形成的第一电极16A和第二电极16B，形成在第一栅电极18A之间的第一栅电极18A 第一电极16A和第二电极16B，以及形成在第一栅电极18A和第二电极16B之间的第二栅电极18B。 在半导体层堆叠13和第一栅电极18A之间形成具有p型导电性的第一控制层19A。
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公开(公告)号：US20100097105A1
公开(公告)日：2010-04-22
申请号：US12445390
申请日：2007-11-20
申请人： Tatsuo Morita , Manabu Yanagihara , Hidetoshi Ishida , Yasuhiro Uemoto , Hiroaki Ueno , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Tatsuo Morita , Manabu Yanagihara , Hidetoshi Ishida , Yasuhiro Uemoto , Hiroaki Ueno , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H03B1/00 , H01L29/20 , H01L29/24 , H01L29/772 , H03K17/56
CPC分类号： H01L29/7787 , H01L27/0605 , H01L29/0619 , H01L29/1066 , H01L29/2003 , H01L29/432 , H01L29/739 , H01L29/8124
摘要： A semiconductor device includes a semiconductor layer stack 13 formed on a substrate 11 and having a channel region, a first electrode 16A and a second electrode 16B formed spaced apart from each other on the semiconductor layer stack 13, a first gate electrode 18A formed between the first electrode 16A and the second electrode 16B, and a second gate electrode 18B formed between the first gate electrode 18A and the second electrode 16B. A first control layer 19A having a p-type conductivity is formed between the semiconductor layer stack 13 and the first gate electrode 18A.
摘要翻译： 半导体器件包括形成在衬底11上并具有沟道区的半导体层堆叠13，在半导体层叠层13上彼此隔开形成的第一电极16A和第二电极16B，形成在第一栅电极18A之间的第一栅电极18A 第一电极16A和第二电极16B，以及形成在第一栅电极18A和第二电极16B之间的第二栅电极18B。 在半导体层堆叠13和第一栅电极18A之间形成具有p型导电性的第一控制层19A。
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公开(公告)号：US20080143421A1
公开(公告)日：2008-06-19
申请号：US11979405
申请日：2007-11-02
IPC分类号： H03K17/687
CPC分类号： H03K17/6874 , H01L27/085 , H01L29/1066 , H01L29/2003 , H01L29/7786 , H03K17/063 , H03K17/567 , H03K17/725
摘要： A bidirectional switch comprises a first FET, a second FET, and a switch controller for controlling a conductive state in which current from a bidirectional power supply electrically connected to drain terminals bidirectionally flows, and a nonconductive state in which the current does not flow. In the conductive state, the switch controller applies, to gate terminals of the first FET and the second FET, a voltage higher than a threshold voltage with reference to a potential at a node to which source terminals of the first FET and the second FET are connected. In the nonconductive state, the switch controller causes the bidirectional power supply and each gate terminal to be electrically insulated from each other, and applies a voltage lower than or equal to the threshold voltage with reference to the potential at the node.
摘要翻译： 双向开关包括第一FET，第二FET和开关控制器，用于控制来自双向电源电连接到漏极端子的电流双向流动的导通状态以及电流不流动的非导通状态。 在导通状态下，开关控制器参照第一FET和第二FET的源极端子处的电位，向第一FET和第二FET的栅极端子施加高于阈值电压的电压 连接的。 在非导通状态下，开关控制器使得双向电源和每个栅极端子彼此电绝缘，并且参考节点处的电位施加低于或等于阈值电压的电压。
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公开(公告)号：US08344463B2
公开(公告)日：2013-01-01
申请号：US12681567
申请日：2009-07-10
IPC分类号： H01L27/88
CPC分类号： H01L27/088 , H01L23/481 , H01L23/4824 , H01L29/0692 , H01L29/1608 , H01L29/2003 , H01L29/4175 , H01L29/42316 , H01L29/475 , H01L29/7786 , H01L2924/0002 , H01L2924/00
摘要： A bidirectional switch includes a plurality of unit cells 11 including a first ohmic electrode 15, a first gate electrode 17, a second gate electrode 18, and a second ohmic electrode 16. The first gate electrodes 15 are electrically connected via a first interconnection 31 to a first gate electrode pad 43. The second gate electrodes 18 are electrically connected via a second interconnection 32 to a second gate electrode pad 44. A unit cell 11 including a first gate electrode 17 having the shortest interconnect distance from the first gate electrode pad 43 includes a second gate electrode 18 having the shortest interconnect distance from the second gate electrode pad 44.
摘要翻译： 双向开关包括多个单元电池11，其包括第一欧姆电极15，第一栅极电极17，第二栅极电极18和第二欧姆电极16.第一栅电极15经由第一互连线31电连接到 第一栅极电极焊盘43.第二栅电极18经由第二互连32电连接到第二栅极电极焊盘44.单元电池11包括与第一栅电极焊盘43的布线距离最短的第一栅电极17 包括与第二栅电极焊盘44的互连距离最短的第二栅电极18。
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公开(公告)号：US08405126B2
公开(公告)日：2013-03-26
申请号：US13196512
申请日：2011-08-02
IPC分类号： H01L29/778
CPC分类号： H01L29/7783 , H01L27/0605 , H01L29/1066 , H01L29/2003 , H01L29/42316 , H01L29/7787
摘要： A semiconductor device includes a semiconductor layer stack formed on a substrate, a first ohmic electrode and a second ohmic electrode which are formed on the semiconductor layer stack, and are spaced from each other, a first control layer formed between the first ohmic electrode and the second ohmic electrode, and a first gate electrode formed on the first control layer. The first control layer includes a lower layer, an intermediate layer which is formed on the lower layer, and has lower impurity concentration than the lower layer, and an upper layer which is formed on the intermediate layer, and has higher impurity concentration than the intermediate layer.
摘要翻译： 半导体器件包括形成在衬底上的半导体层堆叠，形成在半导体层堆叠上的第一欧姆电极和第二欧姆电极，并且彼此间隔开，形成在第一欧姆电极和第二欧姆电极之间的第一控制层 第二欧姆电极和形成在第一控制层上的第一栅电极。 第一控制层包括下层，形成在下层上的中间层，并且具有比下层更低的杂质浓度，以及形成在中间层上的上层，并且具有比中间层更高的杂质浓度 层。
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公开(公告)号：US20110284928A1
公开(公告)日：2011-11-24
申请号：US13196512
申请日：2011-08-02
IPC分类号： H01L29/778 , H01L27/06
CPC分类号： H01L29/7783 , H01L27/0605 , H01L29/1066 , H01L29/2003 , H01L29/42316 , H01L29/7787
摘要： A semiconductor device includes a semiconductor layer stack formed on a substrate, a first ohmic electrode and a second ohmic electrode which are formed on the semiconductor layer stack, and are spaced from each other, a first control layer formed between the first ohmic electrode and the second ohmic electrode, and a first gate electrode formed on the first control layer. The first control layer includes a lower layer, an intermediate layer which is formed on the lower layer, and has lower impurity concentration than the lower layer, and an upper layer which is formed on the intermediate layer, and has higher impurity concentration than the intermediate layer.
摘要翻译： 半导体器件包括形成在衬底上的半导体层堆叠，形成在半导体层堆叠上的第一欧姆电极和第二欧姆电极，并且彼此间隔开，形成在第一欧姆电极和第二欧姆电极之间的第一控制层 第二欧姆电极和形成在第一控制层上的第一栅电极。 第一控制层包括下层，形成在下层上的中间层，并且具有比下层更低的杂质浓度，以及形成在中间层上的上层，并且具有比中间层更高的杂质浓度 层。
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公开(公告)号：US20100213503A1
公开(公告)日：2010-08-26
申请号：US12681567
申请日：2009-07-10
IPC分类号： H01L29/747
CPC分类号： H01L27/088 , H01L23/481 , H01L23/4824 , H01L29/0692 , H01L29/1608 , H01L29/2003 , H01L29/4175 , H01L29/42316 , H01L29/475 , H01L29/7786 , H01L2924/0002 , H01L2924/00
摘要： A bidirectional switch includes a plurality of unit cells 11 including a first ohmic electrode 15, a first gate electrode 17, a second gate electrode 18, and a second ohmic electrode 16. The first gate electrodes 15 are electrically connected via a first interconnection 31 to a first gate electrode pad 43. The second gate electrodes 18 are electrically connected via a second interconnection 32 to a second gate electrode pad 44. A unit cell 11 including a first gate electrode 17 having the shortest interconnect distance from the first gate electrode pad 43 includes a second gate electrode 18 having the shortest interconnect distance from the second gate electrode pad 44.
摘要翻译： 双向开关包括多个单元电池11，其包括第一欧姆电极15，第一栅极电极17，第二栅极电极18和第二欧姆电极16.第一栅电极15经由第一互连线31电连接到 第一栅极电极焊盘43.第二栅电极18经由第二互连32电连接到第二栅极电极焊盘44.单元电池11包括与第一栅电极焊盘43的布线距离最短的第一栅电极17 包括与第二栅电极焊盘44的互连距离最短的第二栅电极18。
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公开(公告)号：US20090166677A1
公开(公告)日：2009-07-02
申请号：US12329939
申请日：2008-12-08
IPC分类号： H01L21/338 , H01L29/812
CPC分类号： H01L29/7783 , H01L21/26533 , H01L21/743 , H01L21/76251 , H01L21/8252 , H01L27/0605 , H01L27/0629 , H01L29/1066 , H01L29/2003 , H01L29/4175 , H01L29/41766 , H01L29/7781 , H01L29/861 , H01L29/872
摘要： A semiconductor device includes: a semiconductor substrate; a diode having a cathode formed on a first surface side of the semiconductor substrate and an anode formed on a second surface side of the semiconductor substrate; and a transistor formed over the semiconductor substrate. The transistor includes a semiconductor layer laminate formed over the semiconductor substrate, a source electrode and a drain electrode that are formed spaced apart from each other over the semiconductor layer laminate, and a gate electrode formed between the source electrode and the drain electrode. The source electrode is electrically connected to the anode, and the drain electrode is electrically connected to the cathode.
摘要翻译： 半导体器件包括：半导体衬底; 具有形成在半导体衬底的第一表面侧的阴极和形成在半导体衬底的第二表面侧上的阳极的二极管; 以及形成在半导体衬底上的晶体管。 晶体管包括形成在半导体衬底上的半导体层叠层，在半导体层叠层上彼此隔开形成的源电极和漏极，以及形成在源电极和漏电极之间的栅电极。 源电极与阳极电连接，漏电极与阴极电连接。
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