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31 条记录 (耗时 0.019 秒)

    Semiconductor device
    1.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US4959329A

    公开(公告)日：1990-09-25

    申请号：US425926

    申请日：1989-10-24

    申请人： Tatsuo Okamoto ,  Akihiko Ohsaki

    发明人： Tatsuo Okamoto ,  Akihiko Ohsaki

    IPC分类号： H01L21/60 ,  H01L23/485

    CPC分类号： H01L21/76897 ,  H01L23/485 ,  H01L2924/0002 ,  Y10S438/927

    摘要： The present invention relates to a semiconductor device having a contact electrode structure and a method of manufacturing the same. An insulating layer is provided in a second semiconductor layer or in a junction part between the second semiconductor layer and a first semiconductor layer correspondence to a contact hole. Therefore, even if a pit generated at a junction part between the second semiconductor layer and a conductive layer in the contact hole grows, the growth of the pit is inhibited by the insulating layer, whereby leakage current caused between the first and second semiconductor layers can be reduced, a reliability of the device being thus enhanced.

    摘要翻译： 本发明涉及一种具有接触电极结构的半导体器件及其制造方法。 绝缘层设置在第二半导体层中或第二半导体层与对应于接触孔的第一半导体层之间的接合部分中。 因此，即使在接触孔中的第二半导体层和导电层之间的接合部处产生的凹坑生长，由于绝缘层抑制了凹坑的生长，从而在第一和第二半导体层之间产生的漏电流也可以 可以降低设备的可靠性。

    Semiconductor device
    2.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US4887143A

    公开(公告)日：1989-12-12

    申请号：US174498

    申请日：1988-03-28

    申请人： Tatsuo Okamoto ,  Akihiko Ohsaki

    发明人： Tatsuo Okamoto ,  Akihiko Ohsaki

    IPC分类号： H01L21/60 ,  H01L23/485

    CPC分类号： H01L21/76897 ,  H01L23/485 ,  H01L2924/0002

    摘要： The present invention relates to a semiconductor device having a contact electrode structure and a method of manufacturing the same. An insulating layer is provided in a second semiconductor layer or in a junction part between the second semiconductor layer and a first semiconductor layer correspondence to a contact hole. Therefore, even if a pit generated at a junction part between the second semiconductor layer and a conductive layer in the contact hole grows, the growth of the pit is inhibited by the insulating layer, whereby leakage current caused between the first and second semiconductor layers can be reduced, a reliability of the device being thus enhanced.

    摘要翻译： 本发明涉及具有接触电极结构的半导体器件及其制造方法。 绝缘层设置在第二半导体层中或第二半导体层与对应于接触孔的第一半导体层之间的接合部分中。 因此，即使在接触孔中的第二半导体层和导电层之间的接合部处产生的凹坑生长，由于绝缘层抑制了凹坑的生长，从而在第一和第二半导体层之间产生的漏电流也可以 可以降低设备的可靠性。

    PLL CIRCUIT
    3.
    发明申请
    PLL CIRCUIT 有权
    PLL电路

    公开(公告)号：US20090153203A1

    公开(公告)日：2009-06-18

    申请号：US12066000

    申请日：2006-07-27

    申请人： Tatsuo Okamoto ,  Yukio Arima ,  Tsuyoshi Ebuchi ,  Kyoko Hirata

    发明人： Tatsuo Okamoto ,  Yukio Arima ,  Tsuyoshi Ebuchi ,  Kyoko Hirata

    IPC分类号： H03L7/06

    CPC分类号： H03L7/10 ,  H03L7/085 ,  H03L7/099 ,  H03L7/0995 ,  H03L7/1976

    摘要： A PLL comprises a current-controlled oscillator (18) for generating an output clock signal based on a current signal generated based on a phase difference between a reference clock signal and a feedback clock signal, a current source (28), and an initialization switch (26) for performing an open/close operation based on the initialization signal, the initialization switch being inserted in series to an input terminal of the current-controlled oscillator (18) and the current source (28).

    摘要翻译： PLL包括电流控制振荡器（18），用于基于基于参考时钟信号和反馈时钟信号之间的相位差产生的电流信号，电流源（28）和初始化开关（18）来产生输出时钟信号 （26），用于基于所述初始化信号执行打开/关闭操作，所述初始化开关串联插入到所述电流控制振荡器（18）和所述电流源（28）的输入端子。

    Semiconductor device
    5.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US4903117A

    公开(公告)日：1990-02-20

    申请号：US203445

    申请日：1988-06-07

    申请人： Tatsuo Okamoto ,  Ikuo Ogoh

    发明人： Tatsuo Okamoto ,  Ikuo Ogoh

    IPC分类号： H01L29/43 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L29/41

    CPC分类号： H01L23/53223 ,  H01L2924/0002 ,  Y10S257/915

    摘要： A silicon oxide film and a BPSG film are formed on a silicon substrate to serve as insulating films, and a contact hole is selectively formed in the insulating films. An impurity diffusion layer is formed on the surface layer of the semiconductor substrate at the bottom portion of the contact hole. A second metal film serving as a metal electrode is formed to cover the BPSG film and the impurity diffusion layer, and a first metal film serving as a barrier layer is formed between the second metal film and the BPSG film and impurity diffusion layer. The first metal film prevents boron contained in the BPSG film from being diffused in the second metal film, thereby to prevent precipitation of silicon in the contact hole.

    摘要翻译： 在硅衬底上形成氧化硅膜和BPSG膜以用作绝缘膜，并且在绝缘膜中选择性地形成接触孔。 在接触孔的底部的半导体衬底的表面层上形成杂质扩散层。 形成用作金属电极的第二金属膜以覆盖BPSG膜和杂质扩散层，并且在第二金属膜和BPSG膜和杂质扩散层之间形成用作阻挡层的第一金属膜。 第一金属膜防止BPSG膜中含有的硼扩散到第二金属膜中，从而防止硅在接触孔中析出。

    Cord-type mowing tool
    7.
    发明授权
    Cord-type mowing tool 失效
    线式割草工具

    公开(公告)号：US4043037A

    公开(公告)日：1977-08-23

    申请号：US732588

    申请日：1976-10-14

    申请人： Tatsuo Okamoto ,  Masat Nogawa ,  Nobuyoshi Okabe

    发明人： Tatsuo Okamoto ,  Masat Nogawa ,  Nobuyoshi Okabe

    IPC分类号： A01D34/73 ,  A01D34/416 ,  A01D55/18 ,  B27B27/00

    CPC分类号： A01D34/416

    摘要： A cord-type mowing tool having a cutter body formed with at least one radially extending bore for receiving a cord serving as a grass cutting blade, and a clamping member fitted in the central bottom opening of the cutter body for forcing against the central portion of the cutter body an end portion of the cord inserted in the radially extending bore to hold the cord in place. The clamping member is threadably connected to the cutter body, so that by loosening and tightening the threadable connection it is possible to readily replace the old cord by a new cord of a predetermined length. The grass cutting tool is simple in construction, light in weight and reliable in performance.

    摘要翻译： 一种绳型割草工具，其具有形成有至少一个径向延伸的孔的刀体，用于接收用作草切刀的绳索，以及夹紧构件，其装配在刀体的中心底部开口中，用于迫使其抵抗 切割器主体将插入径向延伸的孔中的绳索的端部保持在适当的位置。 夹紧构件螺纹连接到切割器主体，从而通过松开和拧紧可螺纹连接，可以用预定长度的新的线容易地更换旧的绳索。 草切工具施工简单，重量轻，性能可靠。

    PLL CIRCUIT
    8.
    发明申请
    PLL CIRCUIT 审中-公开
    PLL电路

    公开(公告)号：US20110115531A1

    公开(公告)日：2011-05-19

    申请号：US13014362

    申请日：2011-01-26

    申请人： Tatsuo Okamoto ,  Yukio Arima ,  Tsuyoshi Ebuchi ,  Kyoko Hirata

    发明人： Tatsuo Okamoto ,  Yukio Arima ,  Tsuyoshi Ebuchi ,  Kyoko Hirata

    IPC分类号： H03L7/095 ,  H03B19/00 ,  H03L7/10

    CPC分类号： H03L7/10 ,  H03L7/085 ,  H03L7/099 ,  H03L7/0995 ,  H03L7/1976

    摘要： A PLL comprises a current-controlled oscillator (18) for generating an output clock signal based on a current signal generated based on a phase difference between a reference clock signal and a feedback clock signal, a current source (28), and an initialization switch (26) for performing an open/close operation based on the initialization signal, the initialization switch being inserted in series to an input terminal of the current-controlled oscillator (18) and the current source (28).

    摘要翻译： PLL包括电流控制振荡器（18），用于基于基于参考时钟信号和反馈时钟信号之间的相位差产生的电流信号，电流源（28）和初始化开关（18）来产生输出时钟信号 （26），用于基于所述初始化信号执行打开/关闭操作，所述初始化开关串联插入到所述电流控制振荡器（18）和所述电流源（28）的输入端子。

    MOS transistor
    9.
    发明授权
    MOS transistor 失效
    MOS晶体管

    公开(公告)号：US4710790A

    公开(公告)日：1987-12-01

    申请号：US627470

    申请日：1984-07-03

    申请人： Tatsuo Okamoto ,  Kouji Eguchi ,  Saburou Oosaki

    发明人： Tatsuo Okamoto ,  Kouji Eguchi ,  Saburou Oosaki

    IPC分类号： H01L21/336 ,  H01L29/41 ,  H01L29/423 ,  H01L29/78

    CPC分类号： H01L29/78 ,  H01L29/66621

    摘要： A gate electrode (4') of a MOS transistor is formed in a depression (16) provided in a substrate (1). Source and drain regions (6 and 7) of the MOS transistor are formed in the substrate (1) to be opposed to each other with the gate electrode (4') being located therebetween.

    摘要翻译： MOS晶体管的栅极（4'）形成在设置在基板（1）中的凹部（16）中。 MOS晶体管的源极和漏极区域（6和7）形成在基板（1）中，以使栅电极（4'）位于它们之间彼此相对。