摘要:
Provided is an emitting device which is capable of improving the luminous efficiency of an emitting layer formed using a group IV semiconductor material and obtaining an emission spectrum having a narrow band, and a manufacturing method therefor. The emitting device comprises: an emitting layer having a potential confinement structure, comprising: a well region comprising a group IV semiconductor material; and a barrier region being adjacent to the well region and comprising a group IV semiconductor material which is different from the group IV semiconductor material in the well region, wherein: a continuous region from the well region over an interface between the well region and the barrier region to a part of the barrier region comprises fine crystals; and a region in the barrier region, which is other than the continuous region comprising the fine crystals, is amorphous or polycrystalline region.
摘要:
Provided is a process for producing a surface emitting laser including a surface relief structure provided on laminated semiconductor layers, including the steps of transferring, to a first dielectric film, a first pattern for defining a mesa structure and a second pattern for defining the surface relief structure in the same process; and forming a second dielectric film on the first dielectric film and a surface of the laminated semiconductor layers to which the first pattern and the second pattern have been transferred. Accordingly, a center position of the surface relief structure can be aligned with a center position of a current confinement structure at high precision.
摘要:
Provided is a process for producing a surface emitting laser including a surface relief structure provided on laminated semiconductor layers, including the steps of transferring, to a first dielectric film, a first pattern for defining a mesa structure and a second pattern for defining the surface relief structure in the same process; and forming a second dielectric film on the first dielectric film and a surface of the laminated semiconductor layers to which the first pattern and the second pattern have been transferred. Accordingly, a center position of the surface relief structure can be aligned with a center position of a current confinement structure at high precision.
摘要:
Provided is an emitting device which is capable of improving the luminous efficiency of an emitting layer formed using a group IV semiconductor material and obtaining an emission spectrum having a narrow band, and a manufacturing method therefor. The emitting device comprises: an emitting layer having a potential confinement structure, comprising: a well region comprising a group IV semiconductor material; and a barrier region being adjacent to the well region and comprising a group IV semiconductor material which is different from the group IV semiconductor material in the well region, wherein: a continuous region from the well region over an interface between the well region and the barrier region to a part of the barrier region comprises fine crystals; and a region in the barrier region, which is other than the continuous region comprising the fine crystals, is amorphous or polycrystalline region.
摘要:
Provided is a process for producing a surface emitting laser including a surface relief structure provided on laminated semiconductor layers, including the steps of transferring, to a first dielectric film, a first pattern for defining a mesa structure and a second pattern for defining the surface relief structure in the same process; and forming a second dielectric film on the first dielectric film and a surface of the laminated semiconductor layers to which the first pattern and the second pattern have been transferred. Accordingly, a center position of the surface relief structure can be aligned with a center position of a current confinement structure at high precision.
摘要:
An image processing apparatus performs a density adjustment process for generating an image containing a copy-forgery-inhibited pattern image for warning against the use of copy products. To help users to easily adjust the density of a latent image portion and a background portion in the copy-forgery-inhibited pattern image, the image processing apparatus determines a density relationship of the latent image portion and the background portion by performing a plurality of adjustment operations, in combination, different in the amount of adjustment relating to the range of variable density in at least one of the latent image portion and the background portion, and sets, based on the density relationship, the density data of each of the latent image portion and the background portion in the data of the copy-forgery-inhibited pattern image.
摘要:
To generate print jobs to be executed by a printing device, an image processing apparatus edits drawing commands output by applications and stored in storage means, in accordance with editing instructions input through input means, executes a process of generating chasing data using the drawing commands, the process including the edition, and then executes a process of generating print data, the process including the edition. The editing instructions for the drawing commands include an instruction to combine a plurality of drawing commands, an instruction to separate a drawing command into a plurality of subcommands, and an instruction to delete a drawing command. The chasing data is generated so as to have a layered data structure indicating the combinative relationship among the plurality of drawing commands if the editing instruction instructs a plurality of drawing commands to be combined together.
摘要:
Provided is a method of manufacturing a surface-emitting laser capable of preventing characteristics fluctuations within the plane and among wafers and oscillating in a single fundamental transverse mode. The method includes after performing selective oxidation: exposing a bottom face of a surface relief structure by etching a second semiconductor layer with a first semiconductor layer where a pattern of the surface relief structure has been formed as an etching mask and a third semiconductor layer as an etching stop layer; and exposing a top face of the surface relief structure by etching the first semiconductor layer where the pattern of the surface relief structure has been formed, with the second semiconductor layer and the third semiconductor layer as etching stop layer.
摘要:
A method of controlling an apparatus which is capable of determining a dot disposition of a copy-forgery-inhibited pattern image is disclosed. The copy-forgery-inhibited pattern image has a latent image area in which a number of first dots and a number of second dots smaller than the first dots are disposed and a background area in which a number of the second dots are disposed. The first dots can be reproduced when copied. The method includes displaying information related to a disposition of the first dots and the second dots in the latent image area, setting a rate of the first dots that are disposed in the latent image area, or a rate of the second dots that are disposed in the latent image area, in accordance with a designation performed by a user, and determining the dot disposition in the latent image area in accordance with the setting of the rate.
摘要:
The present invention realizes a network printing system capable of accumulating and chasing printed data. Further, by providing a job chasing function on the printer driver side, detailed setting can be done to extract history information of the job chasing function. The detailed setting to extract history information to chase a job can be done only by a specific administrator or user so that the job can be reliably chased, whereas the administrator or user can obtain desired history information. Accordingly, a precise jog chasing system can be established.