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18 条记录 (耗时 0.03 秒)

    SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20070210344A1

    公开(公告)日：2007-09-13

    申请号：US11681638

    申请日：2007-03-02

    申请人： Tatsuya ARAO ,  Daiki YAMADA ,  Hidekazu TAKAHASHI ,  Naoto KUSUMOTO ,  Kazuo NISHI ,  Yuusuke SUGAWARA ,  Hironobu TAKAHASHI

    发明人： Tatsuya ARAO ,  Daiki YAMADA ,  Hidekazu TAKAHASHI ,  Naoto KUSUMOTO ,  Kazuo NISHI ,  Yuusuke SUGAWARA ,  Hironobu TAKAHASHI

    IPC分类号： H01L27/148

    CPC分类号： H01L27/14632 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14692

    摘要： It is an object of the present invention to obtain a photoelectric conversion device having a favorable spectral sensitivity characteristic and no variation in output current without such a contamination substance mixed into a photoelectric conversion layer or a transistor. Further, it is another object of the present invention to obtain a highly reliable semiconductor device in a semiconductor device having such a photoelectric conversion device. The present invention relates to a semiconductor device including, over an insulating surface, a first electrode; a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer having a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer, over the overcoat layer, where one end portion of the photoelectric conversion layer is in contact with the first electrode, and where an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer.

    摘要翻译： 本发明的目的是获得具有良好的光谱灵敏度特性的光电转换装置，并且没有混入光电转换层或晶体管中的污染物质的输出电流的变化。 此外，本发明的另一个目的是在具有这种光电转换装置的半导体器件中获得高度可靠的半导体器件。 本发明涉及一种在绝缘表面上包括第一电极的半导体器件; 第二电极; 在第一电极和第二电极之间的滤色器; 覆盖滤色器的外涂层; 以及具有p型半导体层，i型半导体层和n型半导体层的光电转换层，其中光电转换层的一个端部与第一电极接触， 并且其中滤色器的端部位于光电转换层的另一端部的内部。

    PHOTOELECTRIC CONVERSION DEVICE
    2.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE 审中-公开
    光电转换器件

    公开(公告)号：US20070113886A1

    公开(公告)日：2007-05-24

    申请号：US11559477

    申请日：2006-11-14

    申请人： Tatsuya Arao ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi ,  Kazuo NISHI ,  Yuusuke Sugawara ,  Hironobu Takahashi ,  Shuji Fukai

    发明人： Tatsuya Arao ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi ,  Kazuo NISHI ,  Yuusuke Sugawara ,  Hironobu Takahashi ,  Shuji Fukai

    IPC分类号： H01L31/00

    CPC分类号： H01L31/022408 ,  H01L27/14609 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14692 ,  H01L31/03762

    摘要： A photoelectric conversion device provided with a photoelectric conversion layer between a first electrode and a second electrode is formed. The first electrode is partially in contact with the photoelectric conversion layer, and a cross-sectional shape of the first electrode in the contact portion is a taper shape. In this case, part of a first semiconductor layer with one conductivity type is in contact with the first electrode. A planer shape in an edge portion of the first electrode is preferably nonangular, that is, a shape in which edges are planed or a curved shape. By such a structure, concentration of an electric field and concentration of a stress can be suppressed, whereby characteristic deterioration of the photoelectric conversion device can be reduced.

    摘要翻译： 形成在第一电极和第二电极之间设置有光电转换层的光电转换装置。 第一电极部分地与光电转换层接触，并且接触部分中的第一电极的截面形状是锥形。 在这种情况下，具有一种导电类型的第一半导体层的一部分与第一电极接触。 第一电极的边缘部分中的平面形状优选地是非矩形的，即边缘是平面的形状或弯曲的形状。 通过这样的结构，可以抑制电场的浓度和应力的集中，从而可以降低光电转换装置的特性劣化。

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20110062543A1

    公开(公告)日：2011-03-17

    申请号：US12949301

    申请日：2010-11-18

    申请人： Kazuo NISHI ,  Tatsuya ARAO ,  Atsushi HIROSE ,  Yuusuke SUGAWARA ,  Naoto KUSUMOTO ,  Daiki YAMADA ,  Hidekazu TAKAHASHI

    发明人： Kazuo NISHI ,  Tatsuya ARAO ,  Atsushi HIROSE ,  Yuusuke SUGAWARA ,  Naoto KUSUMOTO ,  Daiki YAMADA ,  Hidekazu TAKAHASHI

    IPC分类号： H01L31/06

    CPC分类号： H01L31/102 ,  G01J1/44 ,  H01L31/145 ,  H04N5/2351

    摘要： The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.

    摘要翻译： 本发明提供一种能够检测弱光到强光的光的光电转换装置，涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关，其中当入射光的强度低于预定强度时，光电二极管和放大器电路通过开关彼此电连接，使得光电流被放大器电路放大以输出，并且光电二极管和部分 或者所有的放大器电路都被开关电断开，使得放大系数中的光电流减小以被输出。 根据这样的光电转换装置，能够检测弱光到强光的光。

    PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF
    8.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF 有权
    光电转换装置及其制造方法

    公开(公告)号：US20100187405A1

    公开(公告)日：2010-07-29

    申请号：US12752173

    申请日：2010-04-01

    申请人： Tatsuya ARAO ,  Atsushi HIROSE ,  Kazuo NISHI ,  Yuusuke SUGAWARA

    发明人： Tatsuya ARAO ,  Atsushi HIROSE ,  Kazuo NISHI ,  Yuusuke SUGAWARA

    IPC分类号： H01L27/144 ,  H03F3/08 ,  H01L31/102

    CPC分类号： G01J1/18 ,  G01J1/44 ,  G01J2001/4406 ,  G09G3/3611 ,  G09G2320/0626 ,  G09G2360/144 ,  G09G2360/145 ,  H01L27/14609 ,  H01L27/14618 ,  H01L27/14643 ,  H01L27/14692 ,  H01L31/101 ,  H01L31/105 ,  H01L2924/0002 ,  H01L2924/00

    摘要： It is an object to provide a photoelectric conversion device which detects light ranging from weak light to strong light. The present invention relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer, an amplifier circuit including a thin film transistor and a bias switching means, where a bias which is connected to the photodiode and the amplifier circuit is switched by the bias switching means when intensity of incident light exceeds predetermined intensity, and accordingly, light which is less than the predetermined intensity is detected by the photodiode and light which is more than the predetermined intensity is detected by the thin film transistor of the amplifier circuit. By the present invention, light ranging from weak light to strong light can be detected.

    摘要翻译： 本发明的目的是提供一种检测从弱光到强光的光的光电转换装置。 本发明涉及具有光电转换层的光电二极管的光电转换装置，包括薄膜晶体管的放大电路和偏置开关装置，其中连接到光电二极管和放大器电路的偏压通过偏置 开关意味着当入射光的强度超过预定强度时，由光电二极管检测到小于预定强度的光，并且由放大电路的薄膜晶体管检测出大于预定强度的光。 通过本发明，可以检测从弱光到强光的光。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    9.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号：US20100187534A1

    公开(公告)日：2010-07-29

    申请号：US12752388

    申请日：2010-04-01

    申请人： Kazuo NISHI ,  Junya MARUYAMA ,  Naoto KUSUMOTO ,  Yuusuke SUGAWARA

    发明人： Kazuo NISHI ,  Junya MARUYAMA ,  Naoto KUSUMOTO ,  Yuusuke SUGAWARA

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14665 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1469 ,  H01L27/14692

    摘要： An object of the present invention to provide a semiconductor device manufactured in short time by performing the step of forming the thin film transistor and the step of forming the photoelectric conversion layer in parallel, and to provide a manufacturing process thereof. According to the present invention, a semiconductor device is manufactured in such a way that a thin film transistor is formed over a first substrate, a photoelectric conversion element is formed over a second substrate, and the thin film transistor and the photoelectric conversion element are connected electrically by sandwiching a conductive layer between the first and second substrates opposed to each other so that the thin film transistor and the photoelectric conversion element are located between the first and second substrates. Thus, a method for manufacturing a semiconductor device which suppresses the increase in the number of steps and which increases the throughput can be provided.

    摘要翻译： 本发明的目的在于提供一种通过进行薄膜晶体管的形成工序和并联形成光电转换层的工序，在短时间内制造的半导体器件，并提供其制造工艺。 根据本发明，制造半导体器件，使得在第一衬底上形成薄膜晶体管，在第二衬底上形成光电转换元件，并且连接薄膜晶体管和光电转换元件 通过将导电层夹在彼此相对的第一和第二基板之间，使得薄膜晶体管和光电转换元件位于第一和第二基板之间。 因此，可以提供一种制造半导体器件的方法，该方法抑制步骤数量的增加并增加通过量。

    PHOTOELECTRIC CONVERSION DEVICE AND ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE
    10.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE AND ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE 有权
    光电转换装置和电子装置及制造光电转换装置的方法

    公开(公告)号：US20120256286A1

    公开(公告)日：2012-10-11

    申请号：US13528878

    申请日：2012-06-21

    申请人： Naoto KUSUMOTO ,  Kazuo NISHI ,  Yuusuke SUGAWARA

    发明人： Naoto KUSUMOTO ,  Kazuo NISHI ,  Yuusuke SUGAWARA

    IPC分类号： H01L31/0224 ,  H01L29/868

    CPC分类号： H01L31/147 ,  H01L27/12 ,  H01L27/1214 ,  H01L31/153 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00

    摘要： A photoelectric conversion device includes: a first substrate of which end portions are cut off so as to slope or with a groove shape; a photodiode and an amplifier circuit over the first substrate; a first electrode electrically connected to the photodiode and provided over one end portion of the first substrate; a second electrode electrically connected to the amplifier circuit and provided over an another end portion of the first substrate; and a second substrate having third and fourth electrodes thereon. The first and second electrodes are attached to the third and fourth electrodes, respectively, with a conductive material provided not only at the surfaces of the first, second, third, and fourth electrodes facing each other but also at the side surfaces of the first and second electrodes to increase the adhesiveness between a photoelectric conversion device and a member on which the photoelectric conversion device is mounted.

    摘要翻译： 一种光电转换装置，包括：第一基板，其端部被切割成倾斜或具有凹槽形状; 在所述第一衬底上的光电二极管和放大器电路; 电连接到所述光电二极管并且设置在所述第一基板的一个端部上的第一电极; 电连接到所述放大器电路并且设置在所述第一基板的另一端部上的第二电极; 以及在其上具有第三和第四电极的第二基板。 第一电极和第二电极分别被附接到第三和第四电极，导电材料不仅设置在第一，第二，第三和第四电极的彼此面对，而且在第一和第二电极的第一和第二电极的侧表面处 第二电极，以增加光电转换装置与安装有光电转换装置的部件之间的粘合性。