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    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
    半导体器件的半导体器件和制造方法

    公开(公告)号：US20120080810A1

    公开(公告)日：2012-04-05

    申请号：US13271469

    申请日：2011-10-12

    申请人： Yoshitaka DOZEN ,  Tomoyuki AOKI ,  Hidekazu TAKAHASHI ,  Daiki YAMADA ,  Eiji SUGIYAMA ,  Kaori OGITA ,  Naoto KUSUMOTO

    发明人： Yoshitaka DOZEN ,  Tomoyuki AOKI ,  Hidekazu TAKAHASHI ,  Daiki YAMADA ,  Eiji SUGIYAMA ,  Kaori OGITA ,  Naoto KUSUMOTO

    IPC分类号： H01L29/02

    CPC分类号： H01L23/293 ,  H01L23/49855 ,  H01L23/66 ,  H01L27/1248 ,  H01L27/1266 ,  H01L27/13 ,  H01L28/10 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer.

    摘要翻译： 本发明提供了利用半导体器件中使用的柔性衬底的优点的薄且可弯曲的半导体器件以及半导体器件的制造方法。 半导体器件具有被绝缘层覆盖的至少一个表面，该绝缘层用作用于保护的衬底。 在半导体器件中，绝缘层形成在用作天线的导电层上，使得不覆盖导电层的部分中的绝缘层的厚度比值至少为1.2，并且该值 在导电层上形成的绝缘层与导电层的厚度比为至少0.2。 此外，导电层而不是绝缘层不会在半导体器件的侧面露出，并且绝缘层覆盖TFT和导电层。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
    半导体器件的半导体器件和制造方法

    公开(公告)号：US20110039373A1

    公开(公告)日：2011-02-17

    申请号：US12854060

    申请日：2010-08-10

    申请人： Yoshitaka DOZEN ,  Tomoyuki AOKI ,  Hidekazu TAKAHASHI ,  Daiki YAMADA ,  Eiji SUGIYAMA ,  Kaori OGITA ,  Naoto KUSUMOTO

    发明人： Yoshitaka DOZEN ,  Tomoyuki AOKI ,  Hidekazu TAKAHASHI ,  Daiki YAMADA ,  Eiji SUGIYAMA ,  Kaori OGITA ,  Naoto KUSUMOTO

    IPC分类号： H01L21/56

    CPC分类号： H01L23/293 ,  H01L23/49855 ,  H01L23/66 ,  H01L27/1248 ,  H01L27/1266 ,  H01L27/13 ,  H01L28/10 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer. In addition, a substrate covering an element formation layer side is a substrate having a support on its surface is used in the manufacturing process.

    摘要翻译： 本发明提供了利用半导体器件中使用的柔性衬底的优点的薄且可弯曲的半导体器件以及半导体器件的制造方法。 半导体器件具有被绝缘层覆盖的至少一个表面，该绝缘层用作用于保护的衬底。 在半导体器件中，绝缘层形成在用作天线的导电层上，使得不覆盖导电层的部分中的绝缘层的厚度比值至少为1.2，并且该值 在导电层上形成的绝缘层与导电层的厚度比为至少0.2。 此外，导电层而不是绝缘层不会在半导体器件的侧面露出，并且绝缘层覆盖TFT和导电层。 此外，在制造过程中使用覆盖元件形成层侧的基板是其表面上具有支撑体的基板。

    WIRELESS CHIP AND MANUFACTURING METHOD THEREOF
    4.
    发明申请
    WIRELESS CHIP AND MANUFACTURING METHOD THEREOF 有权
    无线芯片及其制造方法

    公开(公告)号：US20120322212A1

    公开(公告)日：2012-12-20

    申请号：US13596376

    申请日：2012-08-28

    申请人： Koji DAIRIKI ,  Junya MARUYAMA ,  Tomoko TAMURA ,  Eiji SUGIYAMA ,  Yoshitaka DOZEN

    发明人： Koji DAIRIKI ,  Junya MARUYAMA ,  Tomoko TAMURA ,  Eiji SUGIYAMA ,  Yoshitaka DOZEN

    IPC分类号： H01L21/56

    CPC分类号： H01L27/1255 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78648

    摘要： It is an object of the present invention to reduce the cost of a wireless chip, further, to reduce the cost of a wireless chip by enabling the mass production of a wireless chip, and furthermore, to provide a downsized and lightweight wireless chip. A wireless chip in which a thin film integrated circuit peeled from a glass substrate or a quartz substrate is formed between a first base material and a second base material is provided according to the invention. As compared with a wireless chip formed from a silicon substrate, the wireless chip according to the invention realizes downsizing, thinness, and lightweight. The thin film integrated circuit included in the wireless chip according to the invention at least has an n-type thin film transistor having an LDD (Lightly Doped Drain) structure, a p-type thin film transistor having a single drain structure, and a conductive layer functioning as an antenna.

    摘要翻译： 本发明的目的在于降低无线芯片的成本，并且通过实现无线芯片的批量生产，进一步降低无线芯片的成本，此外，提供小型化，轻量化的无线芯片。 根据本发明，提供一种其中从玻璃基板或石英基板剥离的薄膜集成电路形成在第一基材和第二基材之间的无线芯片。 与由硅基板形成的无线芯片相比，根据本发明的无线芯片实现了小型化，薄型化和轻量化。 包括在根据本发明的无线芯片中的薄膜集成电路至少具有具有LDD（轻掺杂漏极）结构的n型薄膜晶体管，具有单个漏极结构的p型薄膜晶体管和导电 层作为天线起作用。

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    5.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20100200663A1

    公开(公告)日：2010-08-12

    申请号：US12767909

    申请日：2010-04-27

    申请人： Yoshitaka DOZEN ,  Eiji SUGIYAMA ,  Hisashi OHTANI ,  Takuya TSURUME

    发明人： Yoshitaka DOZEN ,  Eiji SUGIYAMA ,  Hisashi OHTANI ,  Takuya TSURUME

    IPC分类号： G06K19/07 ,  H01L29/12 ,  H01L23/538

    CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1255

    摘要： In the present application, is disclosed a method of manufacturing a flexible semiconductor device having an excellent reliability and tolerance to the loading of external pressure. The method includes the steps of: forming a separation layer over a substrate having an insulating surface; forming an element layer including a semiconductor element comprising a non-single crystal semiconductor layer, over the separation layer; forming an organic resin layer over the element layer; providing a fibrous body formed of an organic compound or an inorganic compound on the organic resin layer; heating the organic resin layer; and separating the element layer from the separation layer. This method allows the formation of a flexible semiconductor device having a sealing layer in which the fibrous body is impregnated with the organic resin.

    摘要翻译： 在本申请中，公开了一种制造柔性半导体器件的方法，所述柔性半导体器件对外部压力的加载具有优异的可靠性和耐受性。 该方法包括以下步骤：在具有绝缘表面的基底上形成分离层; 在分离层上形成包括非单晶半导体层的半导体元件的元件层; 在元件层上形成有机树脂层; 在有机树脂层上提供由有机化合物或无机化合物形成的纤维体; 加热有机树脂层; 并将元件层与分离层分离。 该方法允许形成具有密封层的柔性半导体器件，其中纤维体浸渍有机树脂。

    INTEGRATED CIRCUIT DEVICE AND METHOD FOR MANUFACTURING INTEGRATED CIRCUIT DEVICE
    6.
    发明申请
    INTEGRATED CIRCUIT DEVICE AND METHOD FOR MANUFACTURING INTEGRATED CIRCUIT DEVICE 有权
    集成电路装置及制造集成电路装置的方法

    公开(公告)号：US20120068181A1

    公开(公告)日：2012-03-22

    申请号：US13308582

    申请日：2011-12-01

    申请人： Daiki YAMADA ,  Yoshitaka DOZEN ,  Eiji SUGIYAMA ,  Hidekazu TAKAHASHI

    发明人： Daiki YAMADA ,  Yoshitaka DOZEN ,  Eiji SUGIYAMA ,  Hidekazu TAKAHASHI

    IPC分类号： H01L29/786

    CPC分类号： H01L27/1266 ,  H01L27/124 ,  H01L27/1292 ,  H01L27/1296 ,  H01L29/78621 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81001 ,  H01L2924/00

    摘要： An object of the present invention is to provide a structure of a thin film circuit portion and a method for manufacturing a thin film circuit portion by which an electrode for connecting to an external portion can be easily formed under a thin film circuit. A stacked body including a first insulating film, a thin film circuit formed over one surface of the first insulating film, a second insulating film formed over the thin film circuit, an electrode formed over the second insulating film, and a resin film formed over the electrode, is formed. A conductive film is formed adjacent to the other surface of the first insulating film of the stacked body to be overlapped with the electrode. The conductive film is irradiated with a laser.

    摘要翻译： 本发明的目的是提供薄膜电路部分的结构和薄膜电路部分的制造方法，通过该薄膜电路部分可以容易地在薄膜电路下形成用于连接到外部的电极。 包括第一绝缘膜，在第一绝缘膜的一个表面上形成的薄膜电路，形成在薄膜电路上的第二绝缘膜，形成在第二绝缘膜上的电极和形成在第二绝缘膜上的树脂膜的层叠体 电极。 导电膜与层叠体的第一绝缘膜的另一表面相邻地形成为与电极重叠。 用激光照射导电膜。

    FUEL PUMP LAYOUT STRUCTURE IN MOTORCYCLE
    7.
    发明申请
    FUEL PUMP LAYOUT STRUCTURE IN MOTORCYCLE 有权
    燃油泵布置结构在摩托车

    公开(公告)号：US20080210203A1

    公开(公告)日：2008-09-04

    申请号：US12039093

    申请日：2008-02-28

    申请人： Eiji SUGIYAMA

    发明人： Eiji SUGIYAMA

    IPC分类号： F02M37/04 ,  B62K11/00 ,  B62K25/04

    CPC分类号： F02M37/106 ,  B62J37/00 ,  F02M37/04 ,  F02M2037/228

    摘要： A fuel pump layout structure in a motorcycle, including an engine, a fuel pump for the supplying fuel to the engine, a frame for supporting the engine and the fuel pump, and a rear suspension damper disposed behind the frame with a swing arm being swingably suspended from the rear suspension damper, wherein said fuel pump is disposed on one side of said rear suspension damper.

    摘要翻译： 摩托车中的燃料泵布置结构，包括发动机，用于向发动机供应燃料的燃料泵，用于支撑发动机和燃料泵的框架，以及设置在框架后面的后悬架阻尼器，摆臂摆动 悬挂在后悬架阻尼器上，其中所述燃油泵设置在所述后悬挂阻尼器的一侧上。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    8.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号：US20110233556A1

    公开(公告)日：2011-09-29

    申请号：US13157338

    申请日：2011-06-10

    申请人： Eiji SUGIYAMA ,  Yoshitaka DOZEN ,  Hisashi OHTANI ,  Takuya TSURUME

    发明人： Eiji SUGIYAMA ,  Yoshitaka DOZEN ,  Hisashi OHTANI ,  Takuya TSURUME

    IPC分类号： H01L29/786

    CPC分类号： H01L27/1266 ,  H01L23/145 ,  H01L23/49855 ,  H01L27/105 ,  H01L27/115 ,  H01L27/1248 ,  H01L27/13 ,  H01L29/78603 ,  H01L2223/6677 ,  H01L2224/16225 ,  H01L2924/07811 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01Q1/2225 ,  H01Q1/2283 ,  H01L2924/00

    摘要： The present invention provides a semiconductor device which is not easily damaged by external local pressure. The present invention further provides a method for manufacturing a highly-reliable semiconductor device, which is not destructed by external local pressure, with a high yield. A structure body, in which high-strength fiber of an organic compound or an inorganic compound is impregnated with an organic resin, is provided over an element layer having a semiconductor element formed using a non-single crystal semiconductor layer, and heating and pressure bonding are performed, whereby a semiconductor device is manufactured, to which the element layer and the structure body in which the high-strength fiber of an organic compound or an inorganic compound is impregnated with the organic resin are firmly fixed together.

    摘要翻译： 本发明提供一种不容易被外部局部压力损坏的半导体器件。 本发明还提供一种以高产率制造不被外部局部压力破坏的高可靠性半导体器件的方法。 在具有使用非单晶半导体层形成的半导体元件的元件层上设置有机化合物或无机化合物的高强度纤维被有机树脂浸渍的结构体，加热和压接 由此制造半导体器件，将有机化合物或无机化合物的高强度纤维与有机树脂浸渍的元件层和结构体牢固地固定在一起。