公开(公告)号：US20120241735A1

公开(公告)日：2012-09-27

申请号：US13421038

申请日：2012-03-15

申请人： Tatsuya HONDA ,  Hiroshi KANEMURA ,  Kengo AKIMOTO ,  Suzunosuke HIRAISHI

发明人： Tatsuya HONDA ,  Hiroshi KANEMURA ,  Kengo AKIMOTO ,  Suzunosuke HIRAISHI

IPC分类号： H01L29/22

CPC分类号： H01L29/247 ,  H01L29/04 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

摘要： Provided is an oxide semiconductor film which has more stable electric characteristics and essentially consists of indium zinc oxide. In addition, provided is a highly reliable semiconductor device which has stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film essentially consisting of indium zinc oxide has a hexagonal crystal structure in which the a-b plane is substantially parallel to a surface of the oxide semiconductor film and a rhombohedral crystal structure in which the a-b plane is substantially parallel to the surface of the oxide semiconductor film.

摘要翻译： 提供了具有更稳定的电特性并且基本上由氧化铟锌组成的氧化物半导体膜。 此外，提供了通过使用氧化物半导体膜具有稳定的电特性的高度可靠的半导体器件。 基本上由氧化铟锌组成的氧化物半导体膜具有六边形晶体结构，其中ab平面基本上平行于氧化物半导体膜的表面，并且其中ab平面基本上平行于氧化物表面的菱方晶体结构 半导体膜。

公开(公告)号：US20110117697A1

公开(公告)日：2011-05-19

申请号：US13011142

申请日：2011-01-21

申请人： Kengo AKIMOTO ,  Tatsuya HONDA ,  Norihito SONE

发明人： Kengo AKIMOTO ,  Tatsuya HONDA ,  Norihito SONE

IPC分类号： H01L21/16

CPC分类号： H01L29/78696 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02266 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/428 ,  H01L21/465 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/045 ,  H01L29/7869

摘要： An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

公开(公告)号：US20090239335A1

公开(公告)日：2009-09-24

申请号：US12432403

申请日：2009-04-29

申请人： Kengo AKIMOTO ,  Tatsuya HONDA ,  Norihito SONE

发明人： Kengo AKIMOTO ,  Tatsuya HONDA ,  Norihito SONE

IPC分类号： H01L21/20 ,  H01L21/302

CPC分类号： H01L29/78696 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02266 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/428 ,  H01L21/465 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/045 ,  H01L29/7869

摘要： An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

公开(公告)号：US20120138922A1

公开(公告)日：2012-06-07

申请号：US13307398

申请日：2011-11-30

申请人： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Hiroki OHARA ,  Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA ,  Masahiro TAKAHASHI ,  Akiharu MIYANAGA

发明人： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Hiroki OHARA ,  Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA ,  Masahiro TAKAHASHI ,  Akiharu MIYANAGA

IPC分类号： H01L29/12

CPC分类号： H01L29/78696 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/247 ,  H01L29/7869 ,  H01L29/78693

摘要： An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.

摘要翻译： 提供了具有更稳定的导电性的氧化物半导体膜。 此外，通过使用氧化物半导体膜提供具有稳定的电特性和高可靠性的半导体器件。 氧化物半导体膜包括结晶区域，并且结晶区域包括其中a-b平面基本上平行于膜的表面并且c轴基本上垂直于膜的表面的晶体; 氧化物半导体膜具有稳定的导电性，并且相对于可见光，紫外线等的照射而言更加电稳定。 通过使用这种用于晶体管的氧化物半导体膜，可以提供具有稳定电特性的高可靠性半导体器件。

公开(公告)号：US20130020571A1

公开(公告)日：2013-01-24

申请号：US13549867

申请日：2012-07-16

申请人： Shunpei YAMAZAKI ,  Masahiro TAKAHASHI ,  Tatsuya HONDA ,  Takehisa HATANO

发明人： Shunpei YAMAZAKI ,  Masahiro TAKAHASHI ,  Tatsuya HONDA ,  Takehisa HATANO

IPC分类号： H01L29/12

CPC分类号： H01L29/7869 ,  H01L29/24 ,  H01L29/78618

摘要： Provided is a structure of a transistor, which enables a so-called normally-off switching element, and a manufacturing method thereof. Provided is a structure of a semiconductor device which achieves high-speed response and high-speed operation by improving on characteristics of a transistor, and a manufacturing method thereof. Provided is a highly reliable semiconductor device. In the transistor in which a semiconductor layer, source and drain electrode layers, a gate insulating layer, and a gate electrode layer are stacked in that order. As the semiconductor layer, an oxide semiconductor layer which contains at least four kinds of elements of indium, gallium, zinc, and oxygen, and has a composition ratio (atomic percentage) of indium as twice or more as a composition ratio of gallium and a composition ratio of zinc, is used.

摘要翻译： 提供了能够实现所谓的常关断开关元件的晶体管的结构及其制造方法。 提供了通过提高晶体管的特性实现高速响应和高速操作的半导体器件的结构及其制造方法。 提供了一种高度可靠的半导体器件。 在其中半导体层，源极和漏极电极层，栅极绝缘层和栅极电极层以该顺序堆叠的晶体管中。 作为半导体层，含有铟，镓，锌和氧中的至少四种元素的氧化物半导体层，铟的组成比（原子百分比）为镓和a的组成比的2倍以上 使用锌的组成比。

公开(公告)号：US20120286260A1

公开(公告)日：2012-11-15

申请号：US13461808

申请日：2012-05-02

申请人： Kosei NODA ,  Shunpei YAMAZAKI ,  Tatsuya HONDA ,  Yusuke SEKINE ,  Hiroyuki TOMATSU

发明人： Kosei NODA ,  Shunpei YAMAZAKI ,  Tatsuya HONDA ,  Yusuke SEKINE ,  Hiroyuki TOMATSU

IPC分类号： H01L29/786 ,  H01L21/34

CPC分类号： H01L29/7869 ,  H01L21/0242 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02595 ,  H01L21/02656 ,  H01L21/84 ,  H01L27/10873 ,  H01L27/1156 ,  H01L27/1203 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78609

摘要： A highly reliable transistor which includes an oxide semiconductor and has high field-effect mobility and in which a variation in threshold voltage is small is provided. By using the transistor, a high-performance semiconductor device, which has been difficult to realize, is provided. The transistor includes an oxide semiconductor film which contains two or more kinds, preferably three or more kinds of elements selected from indium, tin, zinc, and aluminum. The oxide semiconductor film is formed in a state where a substrate is heated. Further, oxygen is supplied to the oxide semiconductor film with an adjacent insulating film and/or by ion implantation in a manufacturing process of the transistor, so that oxygen deficiency which generates a carrier is reduced as much as possible. In addition, the oxide semiconductor film is highly purified in the manufacturing process of the transistor, so that the concentration of hydrogen is made extremely low.

摘要翻译： 提供了包括氧化物半导体并且具有高场效应迁移率并且其中阈值电压的变化小的高度可靠的晶体管。 通过使用晶体管，提供了难以实现的高性能半导体器件。 晶体管包括含有选自铟，锡，锌和铝中的两种或更多种，优选三种或更多种元素的氧化物半导体膜。 在加热基板的状态下形成氧化物半导体膜。 此外，在晶体管的制造过程中，通过相邻的绝缘膜和/或通过离子注入向氧化物半导体膜提供氧，从而尽可能地减少产生载流子的氧气缺乏。 此外，在晶体管的制造过程中，氧化物半导体膜被高度纯化，使得氢的浓度极低。

公开(公告)号：US20120319114A1

公开(公告)日：2012-12-20

申请号：US13495297

申请日：2012-06-13

申请人： Shunpei YAMAZAKI ,  Tatsuya HONDA

发明人： Shunpei YAMAZAKI ,  Tatsuya HONDA

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

摘要： A transistor including an oxide semiconductor layer and having electric characteristics required depending on an intended use, and a semiconductor device including the transistor are provided. In a transistor in which a semiconductor layer, a source electrode layer and a drain electrode layer, a gate insulating film, and a gate electrode layer are stacked in this order over an oxide insulating film, an oxide semiconductor stack composed of at least two oxide semiconductor layers having different energy gaps is used as the semiconductor layer. Oxygen and/or a dopant may be introduced into the oxide semiconductor stack.

摘要翻译： 提供了包括氧化物半导体层并且具有根据预期用途需要的电特性的晶体管，以及包括晶体管的半导体器件。 在半导体层，源极电极层和漏极电极层，栅极绝缘膜和栅极电极层依次层叠在氧化物绝缘膜上的晶体管中，由至少两种氧化物 使用具有不同能隙的半导体层作为半导体层。 可以将氧和/或掺杂剂引入到氧化物半导体堆叠中。

公开(公告)号：US20070188077A1

公开(公告)日：2007-08-16

申请号：US11671716

申请日：2007-02-06

申请人： Tatsuya HONDA

发明人： Tatsuya HONDA

IPC分类号： H01J1/62

CPC分类号： H05B33/145

摘要： To provide a structure of a light emitting element superior in light emission efficiency to a top surface. A structure where two electrodes are arranged in a surface parallel to a substrate with a light emitting layer interposed therebetween, is provided. An electrode is not disposed below the light emitting layer. Therefore, by providing a reflective film below the light emitting layer, light emission efficiency to a top surface can be improved. For example, a film with a reflective index lower than that of the light emitting layer is provided, and light toward the lower side of the light emitting layer is reflected at an interface of the stack where the refractive index has a gap; accordingly, light emission efficiency to the top surface can be improved. In addition, a metal film with a high reflectance (a reflective metal film with a fixed potential or in a floating state) can be disposed below the light emitting layer.

摘要翻译： 为了提供发光效率优异的发光元件的结构到顶面。 提供了两个电极布置在平行于基板的表面中的发光层的结构。 电极不设置在发光层的下方。 因此，通过在发光层的下方设置反射膜，能够提高对顶面的发光效率。 例如，提供具有比发光层低的反射率的膜，并且朝向发光层的下侧的光在折射率具有间隙的叠层的界面处反射; 因此，能够提高对顶面的发光效率。 此外，具有高反射率的金属膜（具有固定电位或浮置状态的反射金属膜）可以设置在发光层的下方。

公开(公告)号：US20110217815A1

公开(公告)日：2011-09-08

申请号：US13034725

申请日：2011-02-25

申请人： Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA

发明人： Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA

IPC分类号： H01L21/336 ,  H01L21/20

CPC分类号： H01L21/02631 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/02667 ,  H01L29/66969 ,  H01L29/7869

摘要： An object is to provide a manufacturing method of an oxide semiconductor film with high crystallinity. Another object is to provide a manufacturing method of a transistor with high field effect mobility. In a manufacturing method of an oxide semiconductor film, an oxide semiconductor film is formed over a substrate in an atmosphere in which oxygen is purposely not contained, and then the oxide semiconductor film is crystallized by a heat treatment in an atmosphere containing oxygen.

摘要翻译： 目的在于提供具有高结晶度的氧化物半导体膜的制造方法。 另一个目的是提供具有高场效应迁移率的晶体管的制造方法。 在氧化物半导体膜的制造方法中，在不含氧的气氛中的基板上形成氧化物半导体膜，然后通过在含氧气氛中的热处理使氧化物半导体膜结晶化。

公开(公告)号：US20080012027A1

公开(公告)日：2008-01-17

申请号：US11776751

申请日：2007-07-12

申请人： Tatsuya HONDA ,  Yuta ENDO

发明人： Tatsuya HONDA ,  Yuta ENDO

IPC分类号： H01L33/00

CPC分类号： H05B33/145 ,  C09K11/574 ,  H01L33/0095 ,  H01L33/28 ,  Y02B20/181

摘要： A method of fabricating a semiconductor device includes the steps of sequentially depositing a first electrode, a light-emitting layer containing zinc sulfide and manganese, and forming a second electrode; and applying thermal treatment to the light-emitting layer. A manganese atom in the zinc sulfide lattice is in a symmetry and nonequilibrium lattice position during film deposition, but has an atomic position which is stable in terms of energy after undergoing thermal treatment. A light-emitting device subjected to thermal treatment has higher luminance than a light-emitting device not subjected to thermal treatment. Further, while a light-emitting device not subjected to the thermal treatment emits only monochromatic light, a light-emitting device subjected to the thermal treatment can easily obtain white light. Therefore, a light-emitting device with low production cost can be fabricated.

摘要翻译： 制造半导体器件的方法包括以下步骤：顺序地沉积第一电极，含有硫化锌和锰的发光层，并形成第二电极; 对发光层进行热处理。 硫化锌晶格中的锰原子在膜沉积期间处于对称性和非平衡晶格位置，但具有在进行热处理后在能量方面稳定的原子位置。 经受热处理的发光器件的亮度高于不进行热处理的发光器件。 此外，虽然不进行热处理的发光器件仅发射单色光，但经受热处理的发光器件可以容易地获得白光。 因此，可以制造低成本的发光装置。