公开(公告)号：US08598044B2

公开(公告)日：2013-12-03

申请号：US11156735

申请日：2005-06-21

申请人： Tatsuya Usami ,  Sadayuki Ohnishi ,  Masayuki Hiroi ,  Akira Matsumoto

发明人： Tatsuya Usami ,  Sadayuki Ohnishi ,  Masayuki Hiroi ,  Akira Matsumoto

IPC分类号： H01L21/302

CPC分类号： H01L21/31144 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612

摘要： An intermediate film 222 in a three-layered resist film 225 is formed by the chemical vapor deposition process at a temperature not higher than 300° C., using Si(OR1)(OR2)(OR3)(OR4), where each of R1, R2, R3 and R4 independently represents a carbon-containing group or a hydrogen atom, excluding the case where all of R1 to R4 are hydrogen atoms.

摘要翻译： 使用Si（OR1）（OR2）（OR3）（OR4）（OR4）（OR4），通过化学气相沉积工艺在不高于300℃的温度下形成三层抗蚀剂膜225中的中间膜222，其中R1 除了R 1〜R 4全部为氢原子的情况外，R 2，R 3和R 4各自独立地表示含碳基团或氢原子。

公开(公告)号：US20060216946A1

公开(公告)日：2006-09-28

申请号：US11156735

申请日：2005-06-21

申请人： Tatsuya Usami ,  Sadayuki Ohnishi ,  Masayuki Hiroi ,  Akira Matsumoto

发明人： Tatsuya Usami ,  Sadayuki Ohnishi ,  Masayuki Hiroi ,  Akira Matsumoto

IPC分类号： H01L21/473

CPC分类号： H01L21/31144 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612

摘要： An intermediate film 222 in a three-layered resist film 225 is formed by the chemical vapor deposition process at a temperature not higher than 300° C., using Si(OR1)(OR2)(OR3)(OR4) , where each of R1, R2, R3 and R4 independently represents a carbon-containing group or a hydrogen atom, excluding the case where all of R1 to R4 are hydrogen atoms.

摘要翻译： 在三层抗蚀剂膜225中的中间膜222通过化学气相沉积工艺在不高于300℃的温度下，使用Si（OR 2）（OR 2） （OR 3）（OR 4），其中R 1，R 2，R 2， R 3和R 4独立地代表含碳基团或氢原子，不包括所有R 1至R“ SUB> 4 是氢原子。

公开(公告)号：US20070045861A1

公开(公告)日：2007-03-01

申请号：US11591704

申请日：2006-11-02

申请人： Koichi Ohto ,  Tatsuya Usami ,  Noboru Morita ,  Sadayuki Ohnishi ,  Koji Arita ,  Ryohei Kitao ,  Yoichi Sasaki

发明人： Koichi Ohto ,  Tatsuya Usami ,  Noboru Morita ,  Sadayuki Ohnishi ,  Koji Arita ,  Ryohei Kitao ,  Yoichi Sasaki

IPC分类号： H01L23/48 ,  H01L21/4763

CPC分类号： H01L23/53228 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device has a semiconductor substrate, and a multi-layered wiring arrangement provided thereon. The multi-layered wring arrangement includes at least one insulating layer structure having a metal wiring pattern formed therein. The insulating layer structure includes a first SiOCH layer, a second SiOCH layer formed on the first SiOCH layer, and a silicon dioxide (SiO2) layer formed on the second SiOCH layer. The second SiOCH layer features a carbon (C) density lower than that of the first SiOCH layer, a hydrogen (H) density lower than that of the first SiOCH layer, and an oxygen (O) density higher than that of the first SiOCH layer.

摘要翻译： 半导体器件具有半导体衬底和设置在其上的多层布线装置。 多层绞合装置包括其中形成有金属布线图案的至少一个绝缘层结构。 绝缘层结构包括第一SiOCH层，形成在第一SiOCH层上的第二SiOCH层和形成在第二SiOCH层上的二氧化硅（SiO 2）层。 第二SiOCH层的碳（C）密度低于第一SiOCH层的碳（C）密度，氢（H）密度低于第一SiOCH层的密度，氧（O）密度高于第一SiOCH层 。

公开(公告)号：US07420279B2

公开(公告)日：2008-09-02

申请号：US11477011

申请日：2006-06-28

申请人： Sadayuki Ohnishi ,  Kouichi Ohto ,  Tatsuya Usami ,  Noboru Morita ,  Kouji Arita ,  Ryouhei Kitao ,  Youichi Sasaki

发明人： Sadayuki Ohnishi ,  Kouichi Ohto ,  Tatsuya Usami ,  Noboru Morita ,  Kouji Arita ,  Ryouhei Kitao ,  Youichi Sasaki

IPC分类号： H01L23/48

CPC分类号： H01L21/02126 ,  C23C16/401 ,  H01L21/02137 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76801 ,  H01L2924/0002 ,  H01L2924/00

摘要： An insulating film used for an interlayer insulating film of a semiconductor device and having a low dielectric constant. The insulating film comprises a carbon containing silicon oxide (SiOCH) film which has Si—CH2 bond therein. The proportion of Si—CH2 bond (1360 cm−1) to Si—CH3 bond (1270 cm−1) in the insulating film is preferably in a range from 0.03 to 0.05 measured as a peak height ratio of FTIR spectrum. The insulating film according to the present invention has higher ashing tolerance and improved adhesion to SiO2 film, when compared with the conventional SiOCH film which only has CH3 group.

摘要翻译： 一种用于半导体器件的层间绝缘膜并具有低介电常数的绝缘膜。 绝缘膜包括其中具有Si-CH2键的含碳氧化硅（SiOCH）膜。 绝缘膜中Si-CH2键（1360cm-1）与Si-CH3键（1270cm-1）的比例优选为以FTIR光谱的峰高比测量的0.03至0.05的范围。 当与仅具有CH3基团的常规SiOCH膜相比时，根据本发明的绝缘膜具有较高的灰化耐受性和改善的与SiO 2膜的粘附性。

公开(公告)号：US20060255466A1

公开(公告)日：2006-11-16

申请号：US11477011

申请日：2006-06-28

申请人： Sadayuki Ohnishi ,  Kouichi Ohto ,  Tatsuya Usami ,  Noboru Morita ,  Kouji Arita ,  Ryouhei Kitao ,  Youichi Sasaki

发明人： Sadayuki Ohnishi ,  Kouichi Ohto ,  Tatsuya Usami ,  Noboru Morita ,  Kouji Arita ,  Ryouhei Kitao ,  Youichi Sasaki

IPC分类号： H01L23/52

CPC分类号： H01L21/02126 ,  C23C16/401 ,  H01L21/02137 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76801 ,  H01L2924/0002 ,  H01L2924/00

摘要： An insulating film used for an interlayer insulating film of a semiconductor device and having a low dielectric constant. The insulating film comprises a carbon containing silicon oxide (SiOCH) film which has Si—CH2 bond therein. The proportion of Si—CH2 bond (1360 cm−1) to Si—CH3 bond (1270 cm−1) in the insulating film is preferably in a range from 0.03 to 0.05 measured as a peak height ratio of FTIR spectrum. The insulating film according to the present invention has higher ashing tolerance and improved adhesion to SiO2 film, when compared with the conventional SiOCH film which only has CH3 group.

公开(公告)号：US07132732B2

公开(公告)日：2006-11-07

申请号：US10767786

申请日：2004-01-29

申请人： Koichi Ohto ,  Tatsuya Usami ,  Noboru Morita ,  Sadayuki Ohnishi ,  Koji Arita ,  Ryohei Kitao ,  Yoichi Sasaki

发明人： Koichi Ohto ,  Tatsuya Usami ,  Noboru Morita ,  Sadayuki Ohnishi ,  Koji Arita ,  Ryohei Kitao ,  Yoichi Sasaki

IPC分类号： H01L23/58 ,  H01L23/48

CPC分类号： H01L23/53228 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device has a semiconductor substrate, and a multi-layered wiring arrangement provided thereon. The multi-layered wring arrangement includes at least one insulating layer structure having a metal wiring pattern formed therein. The insulating layer structure includes a first SiOCH layer, a second SiOCH layer formed on the first SiOCH layer, and a silicon dioxide (SiO2) layer formed on the second SiOCH layer. The second SiOCH layer features a carbon (C) density lower than that of the first SiOCH layer, a hydrogen (H) density lower than that of the first SiOCH layer, and an oxygen (O) density higher than that of the first SiOCH layer.

摘要翻译： 半导体器件具有半导体衬底和设置在其上的多层布线装置。 多层绞合装置包括其中形成有金属布线图案的至少一个绝缘层结构。 绝缘层结构包括第一SiOCH层，形成在第一SiOCH层上的第二SiOCH层和形成在第二SiOCH层上的二氧化硅（SiO 2）层。 第二SiOCH层的碳（C）密度低于第一SiOCH层的碳（C）密度，氢（H）密度低于第一SiOCH层的密度，氧（O）密度高于第一SiOCH层 。

公开(公告)号：US07563705B2

公开(公告)日：2009-07-21

申请号：US11359393

申请日：2006-02-23

申请人： Takashi Tonegawa ,  Koji Arita ,  Tatsuya Usami ,  Noboru Morita ,  Koichi Ohto ,  Yoichi Sasaki ,  Sadayuki Ohnishi ,  Ryohei Kitao

发明人： Takashi Tonegawa ,  Koji Arita ,  Tatsuya Usami ,  Noboru Morita ,  Koichi Ohto ,  Yoichi Sasaki ,  Sadayuki Ohnishi ,  Ryohei Kitao

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/32051 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76811 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A manufacturing method of a semiconductor device including a step of forming a via hole in an insulation layer including an organic low dielectric film, such as MSQ, SiC, and SiCN, and then embedding a wiring material in the via hole through a barrier metal. According to this method, a plasma treatment is performed after the via hole is formed and before the barrier metal is deposited, using a He/H2 gas capable of replacing groups (methyl groups) made of organic constituents and covering the surface of the exposed organic low dielectric film (MSQ) with hydrogen, or a He gas capable decomposing the groups (methyl groups) without removing organic low dielectric molecules. As a result, the surface of the low dielectric film (MSQ) is reformed to be hydrophilic and adhesion to the barrier metal is hence improved, thereby making it possible to prevent the occurrence of separation of the barrier metal and scratches.

摘要翻译： 一种半导体器件的制造方法，包括在包括诸如MSQ，SiC和SiCN的有机低电介质膜的绝缘层中形成通孔的步骤，然后通过阻挡金属将布线材料包埋在通孔中。 根据该方法，使用能够代替由有机成分构成的基团（甲基）并覆盖暴露的有机物的表面的He / H 2气体，在形成通孔并且在阻挡金属沉积之前进行等离子体处理 具有氢的低介电膜（MSQ）或能够分解基团（甲基）而不去除有机低介电分子的He气体。 结果，低电介质膜（MSQ）的表面被重新形成为亲水性，因此提高了与阻挡金属的粘合性，从而可以防止隔离金属的分离和划痕的发生。

公开(公告)号：US20080290522A1

公开(公告)日：2008-11-27

申请号：US12180652

申请日：2008-07-28

申请人： Sadayuki Ohnishi ,  Kouichi Owto ,  Tatsuya Usami ,  Noboru Morita ,  Kouji Arita ,  Ryouhei Kitao ,  Youichi Sasaki

发明人： Sadayuki Ohnishi ,  Kouichi Owto ,  Tatsuya Usami ,  Noboru Morita ,  Kouji Arita ,  Ryouhei Kitao ,  Youichi Sasaki

IPC分类号： H01L23/48

CPC分类号： H01L21/02126 ,  C23C16/401 ,  H01L21/02137 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76801 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes an interlayer insulating film formed on or over a semiconductor substrate. An opening is formed in the interlayer insulating film and reaches a lower layer metal wiring conductor. A metal plug is formed by filling the opening with Cu containing metal via a barrier metal. The interlayer insulating film includes the insulating film which includes a carbon containing silicon oxide (SiOCH) film which has Si—CH2 bond in the carbon containing silicon oxide film. The proportion of Si—CH2 bond (1360 cm-1) to Si—CH3 bond (1270 cm-1) in the insulating film is in a range from 0.03 to 0.05 measured as a peak height ratio of FTIR spectrum.

摘要翻译： 半导体器件包括形成在半导体衬底上或之上的层间绝缘膜。 在层间绝缘膜中形成开口并到达下层金属布线导体。 通过阻挡金属通过用含Cu金属填充开口来形成金属塞。 层间绝缘膜包括含碳氧化硅膜中具有Si-CH2键的含碳氧化硅（SiOCH）膜的绝缘膜。 绝缘膜中的Si-CH 2键（1360cm -1）与Si-CH 3键（1270cm -1）的比例在以FTIR光谱的峰高比测定的0.03〜0.05的范围内。

公开(公告)号：US07074698B2

公开(公告)日：2006-07-11

申请号：US10766921

申请日：2004-01-30

申请人： Noboru Morita ,  Tatsuya Usami ,  Koichi Ohto ,  Sadayuki Ohnishi ,  Koji Arita ,  Ryohei Kitao ,  Yoichi Sasaki

发明人： Noboru Morita ,  Tatsuya Usami ,  Koichi Ohto ,  Sadayuki Ohnishi ,  Koji Arita ,  Ryohei Kitao ,  Yoichi Sasaki

IPC分类号： H01L21/26 ,  H01L21/42

CPC分类号： H01L21/02126 ,  C23C16/325 ,  C23C16/36 ,  C23C16/401 ,  C23C16/46 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/76829 ,  H01L21/76832 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of fabricating a semiconductor device using a PECVD method is provided, which improves the adhesion strength of a deposited dielectric layer to an underlying layer and the reliability of the deposited dielectric layer. After placing a substrate in a chamber, a gas having a thermal conductivity of 0.1 W/mK or greater (e.g., H2 or He) is introduced into the chamber, thereby contacting the gas with the substrate for stabilization of a temperature of the substrate. A desired dielectric layer is deposited on or over the substrate in the chamber using a PECVD method after the step of introducing the gas. As the desired dielectric layer, a dielectric layer having a low dielectric constant, such as a SiCH, SiCHN, or SiOCH layer, is preferably used.

摘要翻译： 提供了使用PECVD方法制造半导体器件的方法，其提高了沉积的介电层对下层的粘附强度和沉积的介电层的可靠性。 在将基板放置在室中之后，将导热率为0.1W / mK以上的气体（例如H 2 H 2或He）引入到室内，从而使气体与基板接触 稳定基板的温度。 在引入气体的步骤之后，使用PECVD方法将期望的电介质层沉积在室中的衬底上或衬底上。 作为所需的介电层，优选使用具有低介电常数的介电层，例如SiCH，SiCHN或SiOCH层。

公开(公告)号：US20060141778A1

公开(公告)日：2006-06-29

申请号：US11359393

申请日：2006-02-23

申请人： Takashi Tonegawa ,  Koji Arita ,  Tatsuya Usami ,  Noboru Morita ,  Koichi Ohto ,  Yoichi Sasaki ,  Sadayuki Ohnishi ,  Ryohei Kitao

发明人： Takashi Tonegawa ,  Koji Arita ,  Tatsuya Usami ,  Noboru Morita ,  Koichi Ohto ,  Yoichi Sasaki ,  Sadayuki Ohnishi ,  Ryohei Kitao

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/32051 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76811 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A manufacturing method of a semiconductor device including a step of forming a via hole in an insulation layer including an organic low dielectric film, such as MSQ, SiC, and SiCN, and then embedding a wiring material in the via hole through a barrier metal. According to this method, a plasma treatment is performed after the via hole is formed and before the barrier metal is deposited, using a He/H2 gas capable of replacing groups (methyl groups) made of organic constituents and covering the surface of the exposed organic low dielectric film (MSQ) with hydrogen, or a He gas capable decomposing the groups (methyl groups) without removing organic low dielectric molecules. As a result, the surface of the low dielectric film (MSQ) is reformed to be hydrophilic and adhesion to the barrier metal is hence improved, thereby making it possible to prevent the occurrence of separation of the barrier metal and scratches.

摘要翻译： 一种半导体器件的制造方法，包括在包括诸如MSQ，SiC和SiCN的有机低电介质膜的绝缘层中形成通孔的步骤，然后通过阻挡金属将布线材料包埋在通孔中。 根据该方法，使用能够代替由有机成分构成的基团（甲基）的He / H 2气体，在形成通路孔之后和隔离金属沉积之前进行等离子体处理 并用氢气覆盖暴露的有机低介电膜（MSQ）的表面，或者能够分解基团（甲基）而不去除有机低介电分子的He气体。 结果，低电介质膜（MSQ）的表面被重新形成为亲水性，因此提高了与阻挡金属的粘附性，从而可以防止隔离金属的分离和划痕的发生。