利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

59 条记录 (耗时 0.02 秒)

    Vertical cavity surface emitting laser and method of manufacturing thereof
    2.
    发明申请
    Vertical cavity surface emitting laser and method of manufacturing thereof 审中-公开
    垂直腔面发射激光器及其制造方法

    公开(公告)号：US20120009704A1

    公开(公告)日：2012-01-12

    申请号：US13137851

    申请日：2011-09-19

    申请人： Yuji Masui ,  Takahiro Arakida ,  Terukazu Naruse ,  Rintaro Koda ,  Naoki Jogan

    发明人： Yuji Masui ,  Takahiro Arakida ,  Terukazu Naruse ,  Rintaro Koda ,  Naoki Jogan

    IPC分类号： H01L33/60

    CPC分类号： H01S5/18344 ,  H01S5/06226 ,  H01S5/18311 ,  H01S5/1835

    摘要： A vertical cavity surface emitting laser capable of reducing parasitic capacitance while suppressing power consumption, and a method of manufacturing thereof are provided. The vertical cavity surface emitting laser includes a columnar mesa including, on a substrate, a first multilayer reflector, an active layer, and a second multilayer reflector in order from the substrate side, and also including a current narrowing layer. The columnar portion of the mesa including the active layer and the current narrowing layer is formed within a region opposed to the first multilayer reflector and a region opposed to the second multilayer reflector, and a cross section area of the columnar portion is smaller than a cross section area of the second multilayer reflector.

    摘要翻译： 提供能够抑制功耗的同时降低寄生电容的垂直腔表面发射激光器及其制造方法。 垂直腔表面发射激光器包括柱状台面，其从衬底侧起依次包括在衬底上的第一多层反射器，有源层和第二多层反射器，并且还包括电流变窄层。 包括有源层和电流变窄层的台面的柱状部分形成在与第一多层反射体相对的区域和与第二多层反射体相对的区域中，柱状部分的横截面面积小于十字形 第二多层反射器的截面积。

    Laser diode
    3.
    发明申请
    Laser diode 审中-公开
    激光二极管

    公开(公告)号：US20110249696A1

    公开(公告)日：2011-10-13

    申请号：US13064524

    申请日：2011-03-30

    申请人： Yuji Masui ,  Takahiro Arakida ,  Kayoko Kikuchi ,  Terukazu Naruse ,  Koichi Kondo ,  Naoki Jogan

    发明人： Yuji Masui ,  Takahiro Arakida ,  Kayoko Kikuchi ,  Terukazu Naruse ,  Koichi Kondo ,  Naoki Jogan

    IPC分类号： H01S5/00

    CPC分类号： H01S5/0425 ,  H01S5/18313 ,  H01S5/18338 ,  H01S5/18347

    摘要： There is provided a laser diode capable of setting a mesa diameter small without use of a method which loses reliability of a device, and is not easily controlled. The laser diode includes: a columnar mesa including a first multilayer film reflecting mirror, an active layer, and a second multilayer film reflecting mirror in this order, including an oxide confined layer having an unoxidized region in middle of a plane, and having a cross-sectional shape in a plane direction different from a cross-sectional shape of the unoxidized region in a plane direction; and a plurality of metal electrodes formed in regions on a top face of the mesa not facing the unoxidized region.

    摘要翻译： 本发明提供一种激光二极管，能够将台面直径设定得较小，而不使用失去设备可靠性的方法，不容易控制。 激光二极管包括：包括第一多层膜反射镜，有源层和第二多层膜反射镜的柱状台面，其包括在平面中间具有未氧化区域的氧化物限制层，并且具有十字形 在与平面方向上的非氧化区域的横截面形状不同的平面方向上的截面形状; 以及形成在不面向未氧化区域的台面的顶面的区域中的多个金属电极。

    Semiconductor Light-emitting device
    6.
    发明申请
    Semiconductor Light-emitting device 有权
    半导体发光装置

    公开(公告)号：US20100200868A1

    公开(公告)日：2010-08-12

    申请号：US12657809

    申请日：2010-01-28

    申请人： Yuji Masui ,  Rintaro Koda ,  Osamu Maeda ,  Takahiro Arakida ,  Terukazu Naruse ,  Naoki Jogan

    发明人： Yuji Masui ,  Rintaro Koda ,  Osamu Maeda ,  Takahiro Arakida ,  Terukazu Naruse ,  Naoki Jogan

    IPC分类号： H01L33/00

    CPC分类号： H01S5/0264

    摘要： A semiconductor light-emitting device includes a semiconductor light-emitting element including a first multilayer reflector, an active layer having a light-emitting region, and a second multilayer reflector in the stated order; a semiconductor light-detecting element disposed opposite the first multilayer reflector in relation to the semiconductor light-emitting element and including a light-absorbing layer configured to absorb light emitted from the light-emitting region; a transparent substrate disposed between the semiconductor light-emitting element and the semiconductor light-detecting element; a first metal layer having a first opening in a region including a region opposite the light-emitting region and bonding the semiconductor light-emitting element and the substrate; and a second metal layer having a second opening in a region including a region opposite the light-emitting region and bonding the semiconductor light-detecting element and the substrate.

    摘要翻译： 半导体发光器件包括具有第一多层反射器，具有发光区域的有源层和按照所述顺序的第二多层反射器的半导体发光元件; 相对于所述半导体发光元件与所述第一多层反射体相对设置并且包括被配置为吸收从所述发光区域发射的光的光吸收层的半导体光检测元件; 设置在所述半导体发光元件和所述半导体光检测元件之间的透明基板; 第一金属层，其在包括与所述发光区域相对的区域的区域中具有第一开口，并且接合所述半导体发光元件和所述基板; 以及第二金属层，其在包括与发光区域相对的区域的区域中具有第二开口，并且接合半导体光检测元件和基板。

    Semiconductor light-emitting device
    7.
    发明授权
    Semiconductor light-emitting device 有权
    半导体发光装置

    公开(公告)号：US07884386B2

    公开(公告)日：2011-02-08

    申请号：US12657809

    申请日：2010-01-28

    申请人： Yuji Masui ,  Rintaro Koda ,  Osamu Maeda ,  Takahiro Arakida ,  Terukazu Naruse ,  Naoki Jogan

    发明人： Yuji Masui ,  Rintaro Koda ,  Osamu Maeda ,  Takahiro Arakida ,  Terukazu Naruse ,  Naoki Jogan

    IPC分类号： H01L33/00

    CPC分类号： H01S5/0264

    摘要： A semiconductor light-emitting device includes a semiconductor light-emitting element including a first multilayer reflector, an active layer having a light-emitting region, and a second multilayer reflector in the stated order; a semiconductor light-detecting element disposed opposite the first multilayer reflector in relation to the semiconductor light-emitting element and including a light-absorbing layer configured to absorb light emitted from the light-emitting region; a transparent substrate disposed between the semiconductor light-emitting element and the semiconductor light-detecting element; a first metal layer having a first opening in a region including a region opposite the light-emitting region and bonding the semiconductor light-emitting element and the substrate; and a second metal layer having a second opening in a region including a region opposite the light-emitting region and bonding the semiconductor light-detecting element and the substrate.

    摘要翻译： 半导体发光器件包括具有第一多层反射器，具有发光区域的有源层和按照所述顺序的第二多层反射器的半导体发光元件; 相对于所述半导体发光元件与所述第一多层反射体相对设置并且包括被配置为吸收从所述发光区域发射的光的光吸收层的半导体光检测元件; 设置在所述半导体发光元件和所述半导体光检测元件之间的透明基板; 第一金属层，其在包括与所述发光区域相对的区域的区域中具有第一开口，并且接合所述半导体发光元件和所述基板; 以及第二金属层，其在包括与发光区域相对的区域的区域中具有第二开口，并且接合半导体光检测元件和基板。

    Vertical cavity surface emitting laser and method of manufacturing thereof
    8.
    发明授权
    Vertical cavity surface emitting laser and method of manufacturing thereof 失效
    垂直腔面发射激光器及其制造方法

    公开(公告)号：US08040934B2

    公开(公告)日：2011-10-18

    申请号：US12656166

    申请日：2010-01-20

    申请人： Yuji Masui ,  Takahiro Arakida ,  Terukazu Naruse ,  Rintaro Koda ,  Naoki Jogan

    发明人： Yuji Masui ,  Takahiro Arakida ,  Terukazu Naruse ,  Rintaro Koda ,  Naoki Jogan

    IPC分类号： H01S5/00 ,  H01S3/00

    CPC分类号： H01S5/18344 ,  H01S5/06226 ,  H01S5/18311 ,  H01S5/1835

    摘要： A vertical cavity surface emitting laser capable of reducing parasitic capacitance while suppressing power consumption, and a method of manufacturing thereof are provided. The vertical cavity surface emitting laser includes a columnar mesa including, on a substrate, a first multilayer reflector, an active layer, and a second multilayer reflector in order from the substrate side, and also including a current narrowing layer. The columnar portion of the mesa including the active layer and the current narrowing layer is formed within a region opposed to the first multilayer reflector and a region opposed to the second multilayer reflector, and a cross section area of the columnar portion is smaller than a cross section area of the second multilayer reflector.

    摘要翻译： 提供能够抑制功耗的同时降低寄生电容的垂直腔表面发射激光器及其制造方法。 垂直腔表面发射激光器包括柱状台面，其从衬底侧起依次包括在衬底上的第一多层反射器，有源层和第二多层反射器，并且还包括电流变窄层。 包括有源层和电流变窄层的台面的柱状部分形成在与第一多层反射体相对的区域和与第二多层反射体相对的区域中，柱状部分的横截面面积小于十字形 第二多层反射器的截面积。

    Vertical cavity surface emitting laser and method of manufacturing thereof
    9.
    发明申请
    Vertical cavity surface emitting laser and method of manufacturing thereof 失效
    垂直腔面发射激光器及其制造方法

    公开(公告)号：US20100202486A1

    公开(公告)日：2010-08-12

    申请号：US12656166

    申请日：2010-01-20

    申请人： Yuji Masui ,  Takahiro Arakida ,  Terukazu Naruse ,  Rintaro Koda ,  Naoki Jogan

    发明人： Yuji Masui ,  Takahiro Arakida ,  Terukazu Naruse ,  Rintaro Koda ,  Naoki Jogan

    IPC分类号： H01S5/026 ,  H01L33/48

    CPC分类号： H01S5/18344 ,  H01S5/06226 ,  H01S5/18311 ,  H01S5/1835

    摘要： A vertical cavity surface emitting laser capable of reducing parasitic capacitance while suppressing power consumption, and a method of manufacturing thereof are provided. The vertical cavity surface emitting laser includes a columnar mesa including, on a substrate, a first multilayer reflector, an active layer, and a second multilayer reflector in order from the substrate side, and also including a current narrowing layer. The columnar portion of the mesa including the active layer and the current narrowing layer is formed within a region opposed to the first multilayer reflector and a region opposed to the second multilayer reflector, and a cross section area of the columnar portion is smaller than a cross section area of the second multilayer reflector.

    摘要翻译： 提供能够抑制功耗的同时降低寄生电容的垂直腔表面发射激光器及其制造方法。 垂直腔表面发射激光器包括柱状台面，其从衬底侧起依次包括在衬底上的第一多层反射器，有源层和第二多层反射器，并且还包括电流变窄层。 包括有源层和电流变窄层的台面的柱状部分形成在与第一多层反射体相对的区域和与第二多层反射体相对的区域中，柱状部分的横截面面积小于十字形 第二多层反射器的截面积。

    Vertical cavity surface emitting laser and method of manufacturing the same
    10.
    发明授权
    Vertical cavity surface emitting laser and method of manufacturing the same 失效
    垂直腔表面发射激光器及其制造方法

    公开(公告)号：US08218596B2

    公开(公告)日：2012-07-10

    申请号：US13317165

    申请日：2011-10-12

    申请人： Tomoyuki Oki ,  Rintaro Koda ,  Naoki Jogan ,  Yuji Masui ,  Takahiro Arakida

    发明人： Tomoyuki Oki ,  Rintaro Koda ,  Naoki Jogan ,  Yuji Masui ,  Takahiro Arakida

    IPC分类号： H01S5/00

    CPC分类号： H01S5/18311 ,  H01S5/0425 ,  H01S5/18358 ,  H01S5/2086

    摘要： A Vertical Cavity Surface Emitting Laser capable of decreasing the lowering of the yield due to displacement and separation of a pedestal without enormous increase of the threshold value and more difficult manufacturing process is provided. A base of a mesa spreads over the top face of a lower DBR layer. The base is a non-flat face in which end faces of a plurality of layers are exposed. The non-flat face is generated due to etching unevenness in forming the mesa, and is in a state of a step in which end faces of a low-refractive index layer and a high-refractive index layer included in the lower DBR layer are alternatively exposed. At least one of the layers exposed in the non-flat face in the plurality of low-refractive index layers included in the lower DBR layer is an oxidation inhibition layer.

    摘要翻译： 提供了一种垂直腔表面发射激光器，其能够降低由于基座的位移和分离而导致的屈服的降低，而没有极大的阈值增加和更困难的制造过程。 台面的底部扩展到较低DBR层的顶面。 基部是露出多层的端面的非平坦面。 由于在形成台面时的蚀刻不均匀性而产生非平坦面，并且处于下层DBR层中包括的低折射率层和高折射率层的端面的步骤的状态 裸露。 包含在下DBR层中的多个低折射率层中的非平坦面露出的层中的至少一层是氧化抑制层。