公开(公告)号：US5864169A

公开(公告)日：1999-01-26

申请号：US503952

申请日：1995-07-19

申请人： Teruyuki Shimura ,  Masayuki Sakai ,  Ryo Hattori ,  Hiroshi Matsuoka ,  Manabu Katoh

发明人： Teruyuki Shimura ,  Masayuki Sakai ,  Ryo Hattori ,  Hiroshi Matsuoka ,  Manabu Katoh

IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/8222 ,  H01L23/367 ,  H01L23/48 ,  H01L23/522 ,  H01L23/538 ,  H01L27/082 ,  H01L31/0328 ,  H01L23/34

CPC分类号： H01L23/5381 ,  H01L21/76898 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/481 ,  H01L24/05 ,  H01L2224/04042 ,  H01L2224/48455 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/30107

摘要： A semiconductor device includes a semiconductor substrate having opposite front and rear surfaces; a semiconductor element disposed on the front surface of the semiconductor substrate and including an electrode; a PHS for dissipating heat generated in the semiconductor element, the PHS including a metal layer and disposed on the rear surface of the semiconductor substrate; a via-hole including a through-hole penetrating through the semiconductor substrate from the front surface to the rear surface and having an inner surface, and a metal disposed in the through-hole and contacting the PHS; and an air-bridge wiring including a metal film and having first and second portions, the air-bridge contacting the electrode of the semiconductor element at the first portion and contacting the metal of the via-hole at the second portion. Therefore, heat produced in the semiconductor element is transferred to the PHS not only through the semiconductor substrate just under the element but also through the air-bridge wiring and the via-hole, whereby the heat dissipating property of the device is significantly improved.

摘要翻译： 半导体器件包括具有相对的前表面和后表面的半导体衬底; 半导体元件，设置在所述半导体基板的前表面上并且包括电极; 用于散发在半导体元件中产生的热的PHS，PHS包括金属层并设置在半导体衬底的后表面上; 通孔，该通孔包括从前表面到后表面穿过半导体衬底的通孔，并具有内表面，以及设置在通孔中并与PHS接触的金属; 以及包括金属膜并具有第一和第二部分的空气桥接布线，所述空气桥接在所述第一部分处与所述半导体元件的电极接触并且在所述第二部分与所述通孔的金属接触。 因此，半导体元件中产生的热量不仅通过刚好在元件下方的半导体衬底传递到PHS，而且还通过气桥布线和通孔传递到PHS，从而显着提高了器件的散热性能。

公开(公告)号：US5726468A

公开(公告)日：1998-03-10

申请号：US614688

申请日：1996-03-13

申请人： Tomoki Oku ,  Hirofumi Nakano ,  Shinichi Miyakuni ,  Teruyuki Shimura ,  Ryo Hattori

发明人： Tomoki Oku ,  Hirofumi Nakano ,  Shinichi Miyakuni ,  Teruyuki Shimura ,  Ryo Hattori

IPC分类号： H01L29/41 ,  H01L21/28 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/331 ,  H01L23/52 ,  H01L29/205 ,  H01L29/423 ,  H01L29/43 ,  H01L29/73 ,  H01L29/732 ,  H01L29/737 ,  H01L31/0328 ,  H01L31/0336

CPC分类号： H01L29/7371 ,  H01L29/42304

摘要： A semiconductor device includes a semiconductor substrate; a first active layer disposed on the semiconductor substrate; a second active layer disposed on the first active layer; a first electrode including a lower stage disposed on the second active layer and an upper stage disposed on the lower stage and having an overhanging portion protruding from the lower stage; an insulating film continuously covering a surface of the second active layer, a side surface of the lower stage of the first electrode, and a lower surface and a side surface of the overhanging portion of the upper stage; and a second electrode disposed on the surface of the first active layer at opposite sides of the second active layer, self-aligned with the second active layer. The distance between the second electrode and the second active layer is minimized and the thickness of the second electrode can be about 7000 .ANG., minimizing the resistance of the first active layer and improving high frequency characteristics. Electrical separation between the first and second active layers can be achieved reliably. Recombination at the surface of the second active layer is suppressed.

摘要翻译： 半导体器件包括半导体衬底; 设置在所述半导体衬底上的第一有源层; 设置在所述第一有源层上的第二有源层; 第一电极，其包括设置在第二有源层上的下层和设置在下层上的上层，具有从下层突出的突出部; 绝缘膜，连续地覆盖第二有源层的表面，第一电极的下层的侧表面，以及上层的突出部的下表面和侧表面; 以及第二电极，其设置在所述第二有源层的与所述第二有源层自对准的所述第二有源层的相对侧的所述表面上。 第二电极和第二有源层之间的距离被最小化，并且第二电极的厚度可以是约7000，使第一有源层的电阻最小化并提高高频特性。 可以可靠地实现第一和第二有源层之间的电气分离。 第二活性层的表面的重组被抑制。

公开(公告)号：US08718723B2

公开(公告)日：2014-05-06

申请号：US12609351

申请日：2009-10-30

申请人： Takashi Suzuki ,  Hidekatsu Kobayashi ,  Ryo Hattori ,  Kouki Murakami ,  Hidehiko Hizuka

发明人： Takashi Suzuki ,  Hidekatsu Kobayashi ,  Ryo Hattori ,  Kouki Murakami ,  Hidehiko Hizuka

IPC分类号： H04M1/00

CPC分类号： H04M1/026 ,  H04M1/0266 ,  H04M1/18

摘要： There is provided a device housing for a mobile terminal device that includes a metallic plate, an external wall formed of resin and disposed at outer peripheral edges of the metallic plate, an electronic component holder formed of the resin at the nearly same time when the external wall is formed. Furthermore, the electronic component holder disposed on an inner area of the metallic plate surrounded by the external wall the metallic plate and disposed apart from the external wall.

摘要翻译： 提供了一种用于移动终端设备的设备外壳，其包括金属板，由树脂形成的外壁并且设置在金属板的外周边缘处，由外部形成的电子部件保持器在几乎相同的时间由外部 墙形成。 此外，电子部件保持器设置在金属板的内部区域上，该金属板被外部金属板包围并与外壁隔开。

公开(公告)号：US20100134963A1

公开(公告)日：2010-06-03

申请号：US12609351

申请日：2009-10-30

申请人： Takashi SUZUKI ,  Hidekatsu Kobayashi ,  Ryo Hattori ,  Kouki Murakami ,  Hidehiko Hizuka

发明人： Takashi SUZUKI ,  Hidekatsu Kobayashi ,  Ryo Hattori ,  Kouki Murakami ,  Hidehiko Hizuka

IPC分类号： H05K5/00

CPC分类号： H04M1/026 ,  H04M1/0266 ,  H04M1/18

摘要： There is provided a device housing for a mobile terminal device that includes a metallic plate, an external wall formed of resin and disposed at outer peripheral edges of the metallic plate, an electronic component holder formed of the resin at the nearly same time when the external wall is formed. Furthermore, the electronic component holder disposed on an inner area of the metallic plate surrounded by the external wall the metallic plate and disposed apart from the external wall.

摘要翻译： 提供了一种用于移动终端设备的设备外壳，其包括金属板，由树脂形成的外壁并且设置在金属板的外周边缘处，由外部形成的电子部件保持器在几乎相同的时间由外部 墙形成。 此外，电子部件保持器设置在金属板的内部区域上，该金属板被外部金属板包围并与外壁隔开。

公开(公告)号：US20100113108A1

公开(公告)日：2010-05-06

申请号：US12605542

申请日：2009-10-26

申请人： Wataru Murata ,  Takeshi Komuro ,  Manabu Hongo ,  Hidekatsu Kobayashi ,  Takashi Suzuki ,  Ryo Hattori ,  Kouki Murakami

发明人： Wataru Murata ,  Takeshi Komuro ,  Manabu Hongo ,  Hidekatsu Kobayashi ,  Takashi Suzuki ,  Ryo Hattori ,  Kouki Murakami

IPC分类号： H04M1/00

CPC分类号： H04M1/18 ,  H04M1/03

摘要： An electronic device includes an outer case having a sound hole, an acoustic unit included in the outer case in a position corresponding to a position of the sound hole, a sheet member provided between the acoustic unit and the outer case in a position corresponding to the position of the sound hole, and placed over the acoustic unit to cover an outside of an outer edge of the acoustic unit, a mounting portion circumferentially provided on an outer peripheral portion of the sheet member and mounted to the outer case, and an extension portion that extends the mounting portion toward an inner periphery thereof on a side of the sheet member facing the acoustic unit and to which the acoustic unit is mounted.

摘要翻译： 电子设备包括具有声孔的外壳，在外壳中包括在与声孔位置相对应的位置的声学单元，设置在声单元和外壳之间的对应于 声孔的位置，并放置在声学单元上方以覆盖声学单元的外边缘的外侧，周向设置在片状构件的外周部分并安装到外壳的安装部分，以及延伸部分 其将安装部分朝向其内周延伸到面向声学单元的片状构件的一侧，并且安装声学单元。

公开(公告)号：US06355951B1

公开(公告)日：2002-03-12

申请号：US09445957

申请日：1999-12-16

申请人： Ryo Hattori

发明人： Ryo Hattori

IPC分类号： H01L3300

CPC分类号： H01L29/66871 ,  H01L21/28587 ,  H01L29/1075 ,  H01L29/155 ,  H01L29/66462

摘要： In a field effect transistor such as high output FET or low noise HEMT, a layer for facilitating re-combination of carriers (for example a superlattice buffer layer), an undoped compound semiconductor layer having a higher resistance than a channel layer and the channel layer made of a compound semiconductor are layered successively. In the layer for facilitating re-combination of carriers, for example, oxygen of high concentration is introduced, to facilitate the non-radiative recombination which shortens the life of injected carriers. The layer for facilitating re-combination of carriers is also formed by forming the superlattice layer at a lower temperature than the channel layer. Thus, efficiency and voltageproofness on high frequency, high output power operation is improved further, and noises can be decreased further on high frequency, low noise operation.

摘要翻译： 在诸如高输出FET或低噪声HEMT的场效应晶体管中，用于促进载流子（例如超晶格缓冲层）的重新组合的层，具有比沟道层更高的电阻的未掺杂化合物半导体层和沟道层 由化合物半导体构成。 在促进载体再结合的层中，例如，引入高浓度的氧，以促进非辐射复合，这缩短了注入载体的寿命。 用于促进载流子再组合的层也通过在比沟道层低的温度下形成超晶格层来形成。 因此，高频率，高输出功率运行的效率和电压进一步提高，在高频，低噪声运行时噪声可进一步降低。

公开(公告)号：US5498572A

公开(公告)日：1996-03-12

申请号：US312960

申请日：1994-09-30

申请人： Toshihiko Shiga ,  Ryo Hattori ,  Tomoki Oku

发明人： Toshihiko Shiga ,  Ryo Hattori ,  Tomoki Oku

IPC分类号： H01L21/28 ,  H01L21/768 ,  H01L23/485 ,  H01L23/522 ,  H01L23/532 ,  H01L29/43 ,  H01L29/45 ,  H01L21/44

CPC分类号： H01L24/05 ,  H01L23/53223 ,  H01L24/03 ,  H01L24/48 ,  H01L29/452 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L24/45 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/10329 ,  Y10S148/10

摘要： A method for manufacturing a semiconductor device including forming an electrode on a part of a semiconductor substrate, depositing an insulating film on the semiconductor substrate and on the electrode, and forming a contact hole penetrating through the insulating film to expose a part of the electrode; forming a barrier metal layer on the electrode in the contact hole, on the internal side surface of the contact hole, and on the surface of the insulating film; and depositing a metal layer on the barrier metal layer and patterning the metal layer and the barrier metal layer to form a wiring layer wherein the barrier metal layer comprises a metal that does not form an intermetallic material by solid state diffusion with either of the electrode and the metal layer even at elevated temperatures.

摘要翻译： 一种制造半导体器件的方法，包括在半导体衬底的一部分上形成电极，在所述半导体衬底上和所述电极上沉积绝缘膜，以及形成穿过所述绝缘膜的接触孔以暴露所述电极的一部分; 在接触孔的电极上，接触孔的内侧表面和绝缘膜的表面上形成阻挡金属层; 以及在所述阻挡金属层上沉积金属层并且对所述金属层和所述阻挡金属层进行图案化以形成布线层，其中所述阻挡金属层包括通过固态扩散而不与所述电极和所述电极中的任一个形成金属间化合物材料的金属， 金属层甚至在升高的温度。

公开(公告)号：US5179040A

公开(公告)日：1993-01-12

申请号：US764362

申请日：1991-09-23

申请人： Ryo Hattori

发明人： Ryo Hattori

IPC分类号： H01S5/227

CPC分类号： H01S5/227 ,  H01S5/2275 ,  Y10S148/095

摘要： A novel semiconductor laser device includes a P-type semiconductor substrate, an N-type InP current blocking layer on the substrate, a P-type InP buried layer of which has the same thickness as and is surrounded by the first current blocking layer, and a ridge, on the buried layer, having a double heterojunction structure therein and including a stack of a planar P-type first InP cladding layer, a planar InGaAsP active layer, and a planar N-type second InP cladding layer. The ridge has a width of the same order as that of the buried layer. A P-type InP current blocking layer is disposed on the N-type current blocking layer burying the ridge and an N-type contact layer is formed opposite and in contact with the P-type current blocking layer and the N-type cladding layer. The conductivity types of the layers can be reversed.

摘要翻译： 一种新型的半导体激光器件包括P型半导体衬底，衬底上的N型InP电流阻挡层，P型InP掩埋层的厚度与第一电流阻挡层相同并被第一电流阻挡层包围， 掩埋层上的具有双异质结结构的脊，包括平面P型第一InP包覆层，平面InGaAsP有源层和平面N型第二InP包覆层的叠层。 脊的宽度与埋层的宽度相同。 P型InP电流阻挡层设置在埋入脊的N型电流阻挡层上，并且N型接触层形成为与P型电流阻挡层和N型覆层相对且接触。 层的导电类型可以颠倒。

公开(公告)号：US4964135A

公开(公告)日：1990-10-16

申请号：US382220

申请日：1989-07-20

申请人： Shigeru Mitsui ,  Ryo Hattori ,  Tetsuya Yagi

发明人： Shigeru Mitsui ,  Ryo Hattori ,  Tetsuya Yagi

IPC分类号： H01S5/16 ,  H01S5/223

CPC分类号： H01S5/16 ,  H01S5/168 ,  H01S5/2231 ,  Y10S148/095

摘要： A semiconductor laser includes a first cladding layer having a forward mesa with at least one end at least partially spaced from the adjacent facet of the laser. A current blocking layer buries the mesa at its sides and at least partially at the ends of the mesa so that the ends are at least partially spaced from the facets. The current blocking layer reduces current injection and surface recombination at the facets at least partially spaced from the mesa ends, thereby increasing the catastrophic optical damage level of the laser. The mesa is formed without etching or exposing the active layer so that formation of interfaces that refract light or shorten laser life-time are avoided. An increase in COD level of about 20 percent is achieved in the invention.

摘要翻译： 半导体激光器包括具有前台面的第一包层，其具有与激光器的相邻小面至少部分间隔开的至少一端。 电流阻挡层在其侧面和至少部分地在台面的端部处嵌入台面，使得端部至少部分地与小平面间隔开。 电流阻挡层减小了与台面端部至少部分间隔的小面处的电流注入和表面复合，从而增加了激光器的灾难性光学损伤水平。 在没有蚀刻或暴露有源层的情况下形成台面，从而避免形成折射光或缩短激光寿命的界面。 本发明实现了COD水平提高约20％。

公开(公告)号：US09400172B2

公开(公告)日：2016-07-26

申请号：US14346306

申请日：2011-10-26

申请人： Ryo Hattori ,  Kenichi Hamano

发明人： Ryo Hattori ,  Kenichi Hamano

IPC分类号： G01B11/06 ,  G01B9/02

CPC分类号： G01B11/06 ,  G01B9/02044 ,  G01B9/02084 ,  G01B11/0625

摘要： A measurement target including a semiconductor substrate, and a first epitaxial layer and a second epitaxial layer stacked in this order on the semiconductor substrate and having no difference in refractive index of a real part from the semiconductor substrate is subjected to reflection interference analysis using a Fourier transform infrared spectroscopy. The thickness of the first epitaxial layer is used as a fitting parameter so as to prevent shift between an interference waveform of a resultant reflection interference pattern containing distortion appearing in a wave number range near an abnormal dispersion range of a refractive index caused by phonon absorption and an interference waveform of a numerically calculated reflection interference pattern in the same wave number range. The thickness of the first epitaxial layer determined during the fitting of the numerically calculated reflection interference pattern is defined as a measured value of the thickness of the first epitaxial layer.

摘要翻译： 在半导体基板上依次层叠半导体衬底以及第一外延层和第二外延层，并且与半导体衬底的实部折射率无差异的测量对象，使用傅里叶 转换红外光谱。 使用第一外延层的厚度作为拟合参数，以便防止出现在由声子吸收引起的折射率的异常色散范围附近的波数范围内出现的失真的合成反射干涉图案的干涉波形与第 在相同波数范围内的数值计算的反射干涉图案的干涉波形。 在将数值计算的反射干涉图案拟合期间确定的第一外延层的厚度定义为第一外延层的厚度的测量值。