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11 条记录 (耗时 0.013 秒)

    Semiconductor laser
    2.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号：US4964135A

    公开(公告)日：1990-10-16

    申请号：US382220

    申请日：1989-07-20

    申请人： Shigeru Mitsui ,  Ryo Hattori ,  Tetsuya Yagi

    发明人： Shigeru Mitsui ,  Ryo Hattori ,  Tetsuya Yagi

    IPC分类号： H01S5/16 ,  H01S5/223

    CPC分类号： H01S5/16 ,  H01S5/168 ,  H01S5/2231 ,  Y10S148/095

    摘要： A semiconductor laser includes a first cladding layer having a forward mesa with at least one end at least partially spaced from the adjacent facet of the laser. A current blocking layer buries the mesa at its sides and at least partially at the ends of the mesa so that the ends are at least partially spaced from the facets. The current blocking layer reduces current injection and surface recombination at the facets at least partially spaced from the mesa ends, thereby increasing the catastrophic optical damage level of the laser. The mesa is formed without etching or exposing the active layer so that formation of interfaces that refract light or shorten laser life-time are avoided. An increase in COD level of about 20 percent is achieved in the invention.

    摘要翻译： 半导体激光器包括具有前台面的第一包层，其具有与激光器的相邻小面至少部分间隔开的至少一端。 电流阻挡层在其侧面和至少部分地在台面的端部处嵌入台面，使得端部至少部分地与小平面间隔开。 电流阻挡层减小了与台面端部至少部分间隔的小面处的电流注入和表面复合，从而增加了激光器的灾难性光学损伤水平。 在没有蚀刻或暴露有源层的情况下形成台面，从而避免形成折射光或缩短激光寿命的界面。 本发明实现了COD水平提高约20％。

    Frequency multiplier with nonlinear semiconductor element
    3.
    发明授权
    Frequency multiplier with nonlinear semiconductor element 失效
    具有非线性半导体元件的频率乘法器

    公开(公告)号：US3963977A

    公开(公告)日：1976-06-15

    申请号：US535022

    申请日：1974-12-23

    申请人： Shigeru Mitsui

    发明人： Shigeru Mitsui

    IPC分类号： H02M11/00 ,  H03B7/06 ,  H03B19/14 ,  H02M5/20

    CPC分类号： H03B19/14 ,  H02M11/00 ,  H03B7/06

    摘要： A semiconductive body in the form of a rectangular parallelepiped is formed of a semiconductive material, such as gallium arsenide or indium phosphide or Group IV elements, having an electric field-to-current characteristic either including a nonlinear region, such as a negative resistance region; or nonlinear and partly including a saturated region. A dc biasing electric field is applied across two opposite faces of the substrate while an ac input electric field is applied across two opposite faces perpendicular to the first faces of the semiconductive body to form a resultant electric field variable in a portion of the characteristic including the nonlinear or saturated region. This variation in the resultant field causes a current component flowing in the direction of the biasing field through the body to have a frequency equal to a multiple of that of the ac input field.

    Method of making a semiconductor laser
    5.
    发明授权
    Method of making a semiconductor laser 失效
    制造半导体激光器的方法

    公开(公告)号：US5045500A

    公开(公告)日：1991-09-03

    申请号：US557073

    申请日：1990-07-25

    申请人： Shigeru Mitsui ,  Ryo Hattori ,  Tetsuya Yagi

    发明人： Shigeru Mitsui ,  Ryo Hattori ,  Tetsuya Yagi

    IPC分类号： H01S5/16 ,  H01S5/223

    CPC分类号： H01S5/16 ,  H01S5/168 ,  H01S5/2231 ,  Y10S148/095

    摘要： A semiconductor laser includes a first cladding layer having a forward mesa with at least one end at least partially spaced from the adjacent facet of the laser. A current blocking layer buries the mesa at its sides and at least partially at the ends of the mesa so that the ends are at least partially spaced from the facets. The current blocking layer reduces current injection and surface recombination at the facets at least partially spaced from the mesa ends, thereby increasing the catastrophic optical damage level of the laser. The mesa is formed without etching or exposing the active layer so that formation of interfaces that refract light or shorten laser lifetime are avoided. An increase in COD level of about 20 percent is achieved in the invention.

    Semiconductor laser
    6.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号：US5003549A

    公开(公告)日：1991-03-26

    申请号：US379246

    申请日：1989-07-12

    申请人： Shigeru Mitsui ,  Ryo Hattori

    发明人： Shigeru Mitsui ,  Ryo Hattori

    IPC分类号： H01S5/00 ,  H01S5/065 ,  H01S5/223 ,  H01S5/323

    CPC分类号： H01S5/2231 ,  H01S5/0658 ,  H01S5/32316 ,  Y10S148/025 ,  Y10S148/095

    摘要： A semiconductor laser particularly adapted for operation in the self-pulsation mode and method for production thereof. A central mesa is formed in the upper cladding layer and normally requires relatively thick sections at either side of the mesa in order to form a waveguide of sufficient thickness to cause self-pulsation operation. In order to control the thickness of the upper cladding layer bounding the mesa, the mesa is first formed by etching the regions bounding the mesa to relatively thin sections capable of ready gauging by optical interferometry. A composite upper cladding layer is then formed by utilizing MOCVD crystal growth techniques to form a buffer layer on the upper cladding layer bounding the mesa, the buffer layer having an aluminum content about the same as the aluminum content of the AlGaAs upper cladding layer. The composite layer functions as a comparatively thick waveguide which can be formed to the necessary thickness with adequate accuracy to provide a high yield when producing self-pulsation lasers according to the present invention.

    摘要翻译： 特别适用于自脉动模式运转的半导体激光器及其制造方法。 中间台面形成在上包层中，并且通常在台面的任一侧需要相对较厚的部分，以便形成足够厚度的波导以引起自脉动操作。 为了控制与台面相邻的上包层的厚度，首先通过将包围台面的区域蚀刻成能够通过光学干涉测量准备测量的相对薄的部分来形成台面。 然后通过利用MOCVD晶体生长技术形成复合上包层，在覆盖台面的上包层上形成缓冲层，该缓冲层具有与AlGaAs上覆层的铝含量大致相同的铝含量。 复合层起到比较厚的波导的作用，该波导可以以足够的精度形成所需的厚度，以在产生根据本发明的自脉动激光器时提供高产量。

    Image processing device, image processing program, recording medium recording the program, image processing method, and shading information acquisition device
    7.
    发明申请
    Image processing device, image processing program, recording medium recording the program, image processing method, and shading information acquisition device 审中-公开
    图像处理装置，图像处理程序，记录程序的记录介质，图像处理方法和着色信息获取装置

    公开(公告)号：US20050174348A1

    公开(公告)日：2005-08-11

    申请号：US10514896

    申请日：2003-10-29

    申请人： Yoshiyuki Sakaguchi ,  Shintaro Takemura ,  Shigeru Mitsui ,  Yasunobu Yamauchi ,  Atsushi Kunimatsu

    发明人： Yoshiyuki Sakaguchi ,  Shintaro Takemura ,  Shigeru Mitsui ,  Yasunobu Yamauchi ,  Atsushi Kunimatsu

    IPC分类号： G06T15/04 ,  G06T15/80 ,  G06T19/20 ,  G06T15/50 ,  G06T15/60

    CPC分类号： G06T15/80 ,  G06T15/50

    摘要： Disclosed is an image processing apparatus, comprising a shading-information acquisition device 1 for picking up an image of an actual sample, a shading-information calculation section 201 for calculating shading information using the image acquired by the shading-information acquisition device 1, and storing the calculated shading information in a shading-information storage section 101, in association with the value of a parameter including an image pickup condition during the pickup of the image, a parameter calculation section 203 for calculating a specific value of the parameter at given position of a virtual 3-dimensional model, a shading-information read section 204 for allowing the shading-information storage section 101 to read the shading information corresponding to the calculated parameter value therethrough, and a shading processing section 206 for calculating a brightness value at a target position HP of the virtual 3-dimensional model, using the read shading information and a texture stored in a texture storage section 103.

    摘要翻译： 公开了一种图像处理装置，包括：用于拾取实际样本的图像的着色信息获取装置1，使用由遮蔽信息获取装置1获取的图像计算着色信息的着色信息计算部201;以及 将所计算的阴影信息存储在阴影信息存储部分101中，与在图像拾取期间包括图像拾取条件的参数的值相关联;参数计算部分203，用于计算给定位置处的参数的特定值 虚线3维模型的遮蔽信息读取部分204，用于允许着色信息存储部分101读取对应于所计算的参数值的阴影信息;以及阴影处理部分206，用于计算亮度值 目标位置HP的虚拟三维模型，使用读取阴影信息 n和存储在纹理存储部分103中的纹理。

    Method for production of a semiconductor laser
    8.
    发明授权
    Method for production of a semiconductor laser 失效
    生产半导体激光的方法

    公开(公告)号：US5053356A

    公开(公告)日：1991-10-01

    申请号：US587968

    申请日：1990-09-25

    申请人： Shigeru Mitsui ,  Ryo Hattori

    发明人： Shigeru Mitsui ,  Ryo Hattori

    IPC分类号： H01S5/00 ,  H01S5/065 ,  H01S5/223 ,  H01S5/323

    CPC分类号： H01S5/2231 ,  H01S5/0658 ,  H01S5/32316 ,  Y10S148/025 ,  Y10S148/095

    摘要： A semiconductor laser particularly adapted for operation in the self-pulsation mode and method for production thereof. A central mesa is formed in the upper cladding layer and normally requires relatively thick sections at either side of the mesa in order to form a wageguide of sufficient thickness to cause self-pulsation operation. In order to control the thickness of the upper cladding layer bounding the mesa, the mesa is first formed by etching the regions bounding the mesa to relatively thin sections capable of ready gauging by optical interferometry. A composite upper clading layer is then formed by utilizing MOCVD crystal growth techniques to form a buffer layer on the upper cladding layer bounding the mesa, the buffer layer having an aluminum content about the same as the aluminum content of the AlGaAs upper cladding layer. The composite layer functions as a comparatively thick waveguide which can be formed to the necessary thickness with adequate accuracy to provide a high yield when producing self-pulsation lasers according to the present invention.

    Bipolar transistor circuit element having base ballasting resistor
    10.
    发明授权
    Bipolar transistor circuit element having base ballasting resistor 失效
    具有基极镇流电阻的双极晶体管电路元件

    公开(公告)号：US5760457A

    公开(公告)日：1998-06-02

    申请号：US806396

    申请日：1997-02-26

    申请人： Shigeru Mitsui ,  Takuji Sonoda ,  Teruyuki Shimura ,  Saburo Takamiya

    发明人： Shigeru Mitsui ,  Takuji Sonoda ,  Teruyuki Shimura ,  Saburo Takamiya

    IPC分类号： H01L21/331 ,  H01L21/8222 ,  H01L27/06 ,  H01L29/08 ,  H01L29/205 ,  H01L29/73 ,  H01L29/737 ,  H01L29/00 ,  H01L31/0328

    CPC分类号： H01L29/0817 ,  H01L27/0658 ,  H01L29/7304 ,  H01L29/7371

    摘要： A bipolar transistor circuit element includes a semiconductor substrate; successively disposed on the substrate, a base layer, an emitter layer, and a collector layer; a bipolar transistor formed from parts of the collector, base, and emitter layers and including a base electrode electrically connected to the base layer and a base electrode pad for making an external connection to the base layer; a base ballasting resistor formed from a part of the base layer isolated from the bipolar transistor and electrically connecting the base electrode to the base electrode pad; and a base parallel capacitor connected in parallel with the base ballasting resistor wherein the base parallel capacitor includes part of the base input pad, a dielectric film disposed on part of the base electrode pad, and a second electrode disposed on the dielectric layer opposite the base electrode pad and electrically connected to the emitter electrode of the bipolar transistor. The base ballasting resistor has a high resistance relative to an emitter ballasting reactor so that it can be easily mass produced with good uniformity and yield.

    摘要翻译： 双极晶体管电路元件包括半导体衬底; 依次设置在基板上，基底层，发射极层和集电极层; 由集电极，基极和发射极层的部分形成的双极性晶体管，并且包括电连接到基极层的基极和用于与基极层进行外部连接的基极焊盘; 由与所述双极型晶体管隔离的所述基极层的一部分形成的基极保护电阻器，并且将所述基极电极与所述基极电极焊盘电连接; 以及与所述基极镇流电阻并联连接的基极并联电容器，其中所述基极并联电容器包括所述基极输入焊盘的一部分，设置在所述基极电极焊盘的一部分上的电介质膜，以及设置在与所述基极相对的所述电介质层上的第二电极 电极焊盘并电连接到双极晶体管的发射极。 碱性镇流电阻器相对于发射极压载反应器具有高电阻，使得其可以容易地以均匀性和产率良好地批量生产。