摘要:
To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other and selectively obtaining desired dissociated species.
摘要:
To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other and selectively obtaining desired dissociated species.
摘要:
To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other and selectively obtaining desired dissociated species.
摘要:
To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other, and selectively obtaining desired dissociated species.
摘要:
To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other and selectively obtaining desired dissociated species.
摘要:
A plasma processing method for etching a sample having a gate oxide film includes generating a plasma in a vacuum chamber using electromagnetic waves, applying an rf bias power to the sample, turning off the rf bias power before a charged voltage of the sample reaches a breakdown voltage, turning on the rf bias power after the charged voltage of the sample has substantially dropped, and repeating the turning on and off of the rf bias power to process the sample. The off-time is set at least longer than the on-time.
摘要:
A plasma processing method for etching a sample having a gate oxide film which generates a plasma in a vacuum chamber using electromagnetic waves, applies an rf bias power to the sample, turns off the rf bias power before a charged voltage of the sample reaches a breakdown voltage of the gate oxide film, turns on the rf bias power after the charged voltage of the sample has substantially dropped and repeats the turning on and off of the rf bias power to process the sample. The off-time is set at least longer than the on-time, and the plasma is generated by continuously supplying power to enable generation of the plasma during the repeated turning on and off of the rf bias power.
摘要:
Electrical damage to semiconductor elements in the plasma etching thereof is suppressed. In processing of a fine pattern by plasma etching, the high frequency power supply to be applied to the specimen is turned off before the charge potential at a portion of the pattern reaches the breakdown voltage of the gate oxide film which is interconnected to said fine pattern, and then the high frequency power supply is turned on when the charge potential at the portion of the pattern drops substantially. This on and off control is effected in a repetitive mode of operation.
摘要:
In a process for the manufacture of a semiconductor integrated circuit device having an inlaid interconnect structure by embedding a conductor film in a recess, such as a trench or hole, formed in an organic insulating film which constitutes an interlevel dielectric film and includes an organosiloxane as a main component, the recess, such as a trench or hole, is formed by subjecting the organic insulating film to plasma dry etching in a CF-based gas/N2/Ar gas in order to suppress the formation of an abnormal shape on the bottom of the recess, upon formation of a photoresist film over the organic insulating film, followed by formation of the recess therein with the photoresist film as an etching mask.
摘要翻译:在制造具有嵌入式互连结构的半导体集成电路器件的方法中,通过将导体膜嵌入形成在构成层间电介质膜的有机绝缘膜中的凹槽(例如沟槽或孔)中,并且包括有机硅氧烷作为 通过使有机绝缘膜在基于CF的气体/ N 2 / Ar气中进行等离子体干蚀刻来形成主要部件,凹槽,例如沟槽或孔,以便抑制 在凹陷的底部形成异常形状,在有机绝缘膜上形成光致抗蚀剂膜,然后用光致抗蚀剂膜作为蚀刻掩模形成凹部。
摘要:
In a process for the manufacture of a semiconductor integrated circuit device having an inlaid interconnect structure by embedding a conductor film in a recess, such as a trench or hole, formed in an organic insulating film which constitutes an interlevel dielectric film and includes an organosiloxane as a main component, the recess, such as a trench or hole, is formed by subjecting the organic insulating film to plasma dry etching in a CF-based gas/N2/Ar gas in order to suppress the formation of an abnormal shape on the bottom of the recess, upon formation of a photoresist film over the organic insulating film, followed by formation of the recess therein with the photoresist film as an etching mask.
摘要翻译:在制造具有嵌入式互连结构的半导体集成电路器件的方法中,通过将导体膜嵌入形成在构成层间电介质膜的有机绝缘膜中的凹槽(例如沟槽或孔)中并且包括有机硅氧烷作为 通过在CF基气体/ N 2 / Ar气体中对有机绝缘膜进行等离子体干蚀刻来形成主要部件,凹槽,例如沟槽或孔,以抑制底部形成异常形状 在有机绝缘膜上形成光致抗蚀剂膜之后,随后用光致抗蚀剂膜作为蚀刻掩模形成凹部。