公开(公告)号：US06309980B1

公开(公告)日：2001-10-30

申请号：US09564754

申请日：2000-05-04

申请人： Takafumi Tokunaga ,  Sadayuki Okudaira ,  Tatsumi Mizutani ,  Kazutami Tago ,  Hideyuki Kazumi ,  Ken Yoshioka

发明人： Takafumi Tokunaga ,  Sadayuki Okudaira ,  Tatsumi Mizutani ,  Kazutami Tago ,  Hideyuki Kazumi ,  Ken Yoshioka

IPC分类号： H01L2100

CPC分类号： H01L21/31116 ,  H01L21/76802

摘要： To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other and selectively obtaining desired dissociated species.

摘要翻译： 为了在LSI的制造中以高选择率和高精度实现蚀刻，当通过使惰性气体激发成亚稳态来干法蚀刻半导体衬底上的薄膜时，反应气体的解离物质的组成被精确地控制 状态在等离子体和氟里昂气体中彼此相互作用并选择性地获得期望的解离物种。

公开(公告)号：US5962347A

公开(公告)日：1999-10-05

申请号：US188371

申请日：1998-11-10

申请人： Takafumi Tokunaga ,  Sadayuki Okudaira ,  Tatsumi Mizutani ,  Kazutami Tago ,  Hideyuki Kazumi ,  Ken Yoshioka

发明人： Takafumi Tokunaga ,  Sadayuki Okudaira ,  Tatsumi Mizutani ,  Kazutami Tago ,  Hideyuki Kazumi ,  Ken Yoshioka

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/70 ,  H01L21/768 ,  H01L21/77 ,  H01L21/00

CPC分类号： H01L21/31116 ,  H01L21/76802

摘要： To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other and selectively obtaining desired dissociated species.

公开(公告)号：USRE39895E1

公开(公告)日：2007-10-23

申请号：US10094157

申请日：2002-03-08

申请人： Takafumi Tokunaga ,  Sadayuki Okudaira ,  Tatsumi Mizutani ,  Kazutami Tago ,  Hideyuki Kazumi ,  Ken Yoshioka

发明人： Takafumi Tokunaga ,  Sadayuki Okudaira ,  Tatsumi Mizutani ,  Kazutami Tago ,  Hideyuki Kazumi ,  Ken Yoshioka

IPC分类号： H01L21/00

CPC分类号： H01L21/76802 ,  H01L21/31116

摘要： To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other and selectively obtaining desired dissociated species.

摘要翻译： 为了在LSI的制造中以高选择率和高精度实现蚀刻，当通过使惰性气体激发成亚稳态来干法蚀刻半导体衬底上的薄膜时，反应气体的解离物质的组成被精确地控制 状态在等离子体和氟里昂气体中彼此相互作用并选择性地获得期望的解离物种。

公开(公告)号：US06074958A

公开(公告)日：2000-06-13

申请号：US339041

申请日：1999-06-23

申请人： Takafumi Tokunaga ,  Sadayuki Okudaira ,  Tatsumi Mizutani ,  Kazutami Tago ,  Hideyuki Kazumi ,  Ken Yoshioka

发明人： Takafumi Tokunaga ,  Sadayuki Okudaira ,  Tatsumi Mizutani ,  Kazutami Tago ,  Hideyuki Kazumi ,  Ken Yoshioka

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/70 ,  H01L21/768 ,  H01L21/77 ,  H01L21/00

CPC分类号： H01L21/31116 ,  H01L21/76802

摘要： To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other and selectively obtaining desired dissociated species.

摘要翻译： 为了在LSI的制造中以高选择率和高精度实现蚀刻，当通过使惰性气体激发成亚稳态来干法蚀刻半导体衬底上的薄膜时，反应气体的解离物质的组成被精确地控制 状态在等离子体和氟里昂气体中彼此相互作用并选择性地获得期望的解离物种。

公开(公告)号：US5874013A

公开(公告)日：1999-02-23

申请号：US857167

申请日：1997-05-15

申请人： Takafumi Tokunaga ,  Sadayuki Okudaira ,  Tatsumi Mizutani ,  Kazutami Tago ,  Hideyuki Kazumi ,  Ken Yoshioka

发明人： Takafumi Tokunaga ,  Sadayuki Okudaira ,  Tatsumi Mizutani ,  Kazutami Tago ,  Hideyuki Kazumi ,  Ken Yoshioka

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/70 ,  H01L21/768 ,  H01L21/77 ,  B44C1/22 ,  C03C15/00 ,  C23F1/00

CPC分类号： H01L21/31116 ,  H01L21/76802

摘要： To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other, and selectively obtaining desired dissociated species.

摘要翻译： 为了在LSI的制造中以高选择率和高精度实现蚀刻，当通过使惰性气体激发成亚稳态来干法蚀刻半导体衬底上的薄膜时，反应气体的解离物质的组成被精确地控制 状态在等离子体和氟里昂气体中彼此相互作用，并且选择性地获得所需的解离物种。

公开(公告)号：US06767782B2

公开(公告)日：2004-07-27

申请号：US10082311

申请日：2002-02-26

申请人： Takeshi Saikawa ,  Ryohei Maeno ,  Sadayuki Okudaira ,  Tetsuo Saito ,  Tsuyoshi Tamaru ,  Kazutoshi Ohmori

发明人： Takeshi Saikawa ,  Ryohei Maeno ,  Sadayuki Okudaira ,  Tetsuo Saito ,  Tsuyoshi Tamaru ,  Kazutoshi Ohmori

IPC分类号： H01L218238

CPC分类号： H01L21/76801 ,  H01L21/76819 ,  H01L21/76838 ,  H01L21/7684 ,  Y10S438/906

摘要： Charge-up damages to a substrate are reduced in a manufacturing process using plasma, and the reliability of a semiconductor device is improved. By forming an insulating film on the back of a substrate before a step of forming a first wiring layer, even if a plasma CVD method, a sputtering method, or a dry-etching method is used in a wiring-forming step executed later, then it is possible to suppress electric charges which are generated on the substrate and which flow to the ground potential through the substrate, and to prevent damages to the substrate due to charge-up.

摘要翻译： 在使用等离子体的制造工艺中，对基板的充电损坏减少，并且提高了半导体器件的可靠性。通过在形成第一布线层的步骤之前在基板背面形成绝缘膜，即使 在稍后执行的布线形成步骤中使用等离子体CVD法，溅射法或干蚀刻法，则可以抑制在基板上产生的电荷，并且通过基板流向接地电位， 并防止由于充电而损坏基板。

公开(公告)号：US4985114A

公开(公告)日：1991-01-15

申请号：US418223

申请日：1989-10-06

申请人： Sadayuki Okudaira ,  Hiroshi Kawakami ,  Tokuo Kure ,  Kazunori Tsujimoto ,  Shinichi Tachi

发明人： Sadayuki Okudaira ,  Hiroshi Kawakami ,  Tokuo Kure ,  Kazunori Tsujimoto ,  Shinichi Tachi

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

CPC分类号： H01L21/32139 ,  H01L21/30655 ,  H01L21/3085 ,  H01L21/31144 ,  Y10S438/913

摘要： A dry etching method including the steps of introducing etching and deposition gases alternately into a reaction chamber at predetermined time intervals, etching the exposed surface of an article to be etched and applying deposition to the surface film thereof alternately by making plasma generated by applying power to the etching and deposition gases introduced into the reaction chamber come in contact with the article to be etched in the reaction chamber in order to etch the surface, is characterized in that the power is applied after the passage of predetermined time from the start of the introduction of the deposition gas and before the etching gas is introduced and cut off when the introduction of the etching gas is suspended.

公开(公告)号：US4462863A

公开(公告)日：1984-07-31

申请号：US459240

申请日：1983-01-19

申请人： Shigeru Nishimatsu ,  Keizo Suzuki ,  Ken Ninomiya ,  Ichiro Kanomata ,  Sadayuki Okudaira ,  Hiroji Saida

发明人： Shigeru Nishimatsu ,  Keizo Suzuki ,  Ken Ninomiya ,  Ichiro Kanomata ,  Sadayuki Okudaira ,  Hiroji Saida

IPC分类号： C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01L21/30604 ,  H01J37/32192 ,  H01J37/3266 ,  H01J2237/3343 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137

摘要： A microwave plasma etching system is disclosed which comprises a vacuum chamber for providing a discharge space and provided with an inlet for introducing a discharge gas containing a fluorine-containing gas, hydrogen and oxygen, magnetic field forming means for forming a magnetic field in the discharge space, microwave electric field forming means for forming a microwave electric field in the discharge space, and substrates holding means for holding substrates to be processed in the vacuum chamber. In the microwave plasma etching, the discharge gas containing fluorine, hydrogen with or without oxygen provides excellent etching almost free from side etching.

摘要翻译： 公开了一种微波等离子体蚀刻系统，其包括用于提供放电空间的真空室，并且设有用于引入含有含氟气体，氢气和氧气的放电气体的入口，用于在放电中形成磁场的磁场形成装置 用于在放电空间中形成微波电场的空间微波电场形成装置和用于保持在真空室中待处理的基板的基板保持装置。 在微波等离子体蚀刻中，含有氟的放电气体，具有或不具有氧气的氢提供几乎不受侧面蚀刻的优良蚀刻。

公开(公告)号：US4298419A

公开(公告)日：1981-11-03

申请号：US163294

申请日：1980-06-26

申请人： Keizo Suzuki ,  Sadayuki Okudaira ,  Shigeru Nishimatsu ,  Ichiro Kanomata

发明人： Keizo Suzuki ,  Sadayuki Okudaira ,  Shigeru Nishimatsu ,  Ichiro Kanomata

IPC分类号： C23F4/00 ,  C03C15/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  C23F1/02 ,  C03C25/06 ,  H01L21/306

CPC分类号： H01J37/32357 ,  C03C15/00

摘要： A dry etching apparatus using microwaves according to the present invention is equipped with means for impressing such an AC voltage upon a sample as has a frequency ranging from 100 KHx to 10 MHx. Consequently, the sample has its surface prevented from being charged up no matter which it might be made of an insulator or might have its surface covered with an insulator. As a result, the etching rate can be maintained at a high level even for such sample.

摘要翻译： 根据本发明的使用微波的干式蚀刻装置具有将样品上的这种交流电压施加到100KHx至10MHZ的频率的装置。 因此，无论是由绝缘体制成还是将其表面覆盖绝缘体，样品的表面都不会被充电。 结果，即使对于这样的样品，蚀刻速率也可以保持在高水平。

公开(公告)号：US5580420A

公开(公告)日：1996-12-03

申请号：US307272

申请日：1994-09-16

申请人： Katsuya Watanabe ,  Tetsunori Kaji ,  Naoyuki Tamura ,  Kenji Nakata ,  Hiroyuki Shichida ,  Seiichi Watanabe ,  Sadayuki Okudaira ,  Keizo Suzuki

发明人： Katsuya Watanabe ,  Tetsunori Kaji ,  Naoyuki Tamura ,  Kenji Nakata ,  Hiroyuki Shichida ,  Seiichi Watanabe ,  Sadayuki Okudaira ,  Keizo Suzuki

IPC分类号： H01J37/32 ,  H01L21/00

CPC分类号： H01J37/32238 ,  H01J37/32192 ,  H01J37/32247 ,  H01J37/32275 ,  H01J37/32678

摘要： A microwave penetrating window and a cavity which are substantially equal in diameter to a plasma generating chamber are successively connected to the plasma generating chamber and microwaves are introduced via the cavity into the plasma generating chamber. A processing gas in the plasma generating chamber is converted into a plasma by means of the microwaves introduced into the plasma generating chamber and the microwaves in specific modes are resonated in between a microwave reflective interface with the plasma generated in the plasma generating chamber and the reflective edge face of the cavity. The microwaves in the specific modes are thus formed in the cavity and the energy of the microwaves in the specific modes is increased by resonance. The boosted energy is added to the plasma and the plasma is densified accordingly. Moreover, a plasma excellent in uniformity and stability can be generated by resonating the microwaves in the specific modes in the presence of a uniform electromagnetic field.

摘要翻译： 与等离子体发生室直径基本相等的微波穿透窗和空腔连续地连接到等离子体发生室，并且微波经由腔引入等离子体发生室。 等离子体发生室中的处理气体通过引入到等离子体发生室中的微波转换为等离子体，并且特定模式中的微波共振在与等离子体发生室中产生的等离子体的微波反射界面和反射 空腔的边缘面。 因此，特定模式中的微波形成在空腔中，并且特定模式中的微波的能量通过共振增加。 将升高的能量加入到等离子体中，并且等离子体相应地致密化。 此外，通过在存在均匀电磁场的情况下在特定模式中谐振微波，可以产生均匀性和稳定性优异的等离子体。