Crosslinkable elastic copolymer composition
    1.
    发明授权
    Crosslinkable elastic copolymer composition 有权
    可交联弹性共聚物组合物

    公开(公告)号:US06437028B1

    公开(公告)日:2002-08-20

    申请号:US09673669

    申请日:2000-11-07

    IPC分类号: C08K548

    CPC分类号: C08K3/22 C08K5/50 C08L27/12

    摘要: An elastic copolymer composition which contains a copolymer having a content of polymer units based on vinylidene fluoride as low as from 0.5 to 15 mol %, which is satisfactory in polyol vulcanizability and which gives a vulcanizate excellent in heat resistance and oil resistance. This composition comprises a tetrafluoroethylene (35 to 65 mol %)/propylene (20 to 50 mol %)/vinylidene fluoride (0.5 to 15 mol %) copolymer, an organic quaternary ammonium hydroxide or a salt of an organic quaternary phosphonium compound with a nitrogen-containing heterocyclic compound, an organic polyhydroxy compound, and a metal oxide or a metal hydroxide, and optionally contains an amine compound.

    摘要翻译: 一种弹性共聚物组合物,其含有共聚物,所述共聚物的聚偏二氟乙烯含量低至0.5〜15摩尔%,多元醇硫化性良好,耐硫性优异,耐油性优异。 该组合物包含四氟乙烯(35〜65摩尔%)/丙烯(20〜50摩尔%)/偏二氟乙烯(0.5〜15摩尔%)共聚物,有机季铵氢氧化物或有机季鏻化合物与氮 含有杂环化合物,有机多羟基化合物,金属氧化物或金属氢氧化物,任选地含有胺化合物。

    Organic semiconductor device
    2.
    发明授权
    Organic semiconductor device 有权
    有机半导体器件

    公开(公告)号:US06870182B2

    公开(公告)日:2005-03-22

    申请号:US10286902

    申请日:2002-11-04

    CPC分类号: H01L51/057

    摘要: An organic semiconductor device of the present invention has an organic semiconductor layer disposed within a depression formed in a substrate; a drain electrode and a source electrode; and a gate electrode to face the organic semiconductor layer with a gate insulating layer interposed. Alternatively, an organic semiconductor device of the present invention has an insulating layer disposed on a substrate; an organic semiconductor layer disposed within a depression formed in the insulating layer; a drain electrode and a source electrode; and a gate electrode disposed to face the organic semiconductor layer with a gate insulating layer interposed.

    摘要翻译: 本发明的有机半导体器件具有设置在形成于基板的凹部内的有机半导体层, 漏电极和源电极; 以及栅极电极,其间插入有栅极绝缘层来面向有机半导体层。 或者,本发明的有机半导体器件具有设置在基板上的绝缘层; 设置在形成在绝缘层中的凹部内的有机半导体层; 漏电极和源电极; 以及设置为与所述有机半导体层相对的栅电极,所述栅极绝缘层被插入。

    Surface emitting laser and photodiode, manufacturing method therefor, and optoelectric integrated circuit using the surface emitting laser and the photodiode
    3.
    发明授权
    Surface emitting laser and photodiode, manufacturing method therefor, and optoelectric integrated circuit using the surface emitting laser and the photodiode 失效
    表面发射激光器和光电二极管,其制造方法和使用表面发射激光器和光电二极管的光电集成电路

    公开(公告)号:US06687268B2

    公开(公告)日:2004-02-03

    申请号:US10096957

    申请日:2002-03-14

    IPC分类号: H01S310

    摘要: The present invention provides a surface emitting laser and a photodiode which permit secure mounting even in mounting by flip chip bonding, and high-speed modulation. The present invention also provides a manufacturing method therefor and an optoelectric integrated circuit using the surface emitting laser and the photodiode. Semiconductor stacked layers stacked on a semiconductor substrate have a light emitting portion and a reinforcing portion formed with a recessed portion provided therebetween, and a p-type ohmic electrode and an n-type ohmic electrode are formed on the top of the reinforcing portion. The p-type ohmic electrode is electrically connected to a p-type contact layer through a contact hole vertically formed in polyimide buried in the recessed portion to permit supply of a current to the light emitting portion in the thickness direction. The recessed portion has a groove formed to reach the semiconductor substrate, thereby suppressing the parasitic capacity between the p-type ohmic electrode and the n-type ohmic electrode.

    摘要翻译: 本发明提供了一种表面发射激光器和光电二极管,其允许即使在通过倒装芯片接合的安装和高速调制中也可以安全地安装。 本发明还提供了一种其制造方法和使用表面发射激光器和光电二极管的光电集成电路。 层叠在半导体基板上的半导体堆叠层具有发光部和形成有设置在其间的凹部的加强部,在增强部的顶部形成有p型欧姆电极和n型欧姆电极。 p型欧姆电极通过垂直形成在埋入凹部中的聚酰亚胺中的接触孔电连接到p型接触层,以允许在厚度方向上向发光部分提供电流。 凹部具有形成为到达半导体基板的凹槽,从而抑制p型欧姆电极和n型欧姆电极之间的寄生电容。

    Light emitting device
    4.
    发明授权
    Light emitting device 失效
    发光装置

    公开(公告)号:US06462356B1

    公开(公告)日:2002-10-08

    申请号:US09869157

    申请日:2001-06-25

    IPC分类号: H01L3112

    摘要: A light-emitting device (1000) includes a light-emitting device section (100) and a waveguide section (200) which transmits light from the light-emitting device section, and the light-emitting device section and the waveguide section are integrally formed on a substrate (10). The light-emitting device section (100) has a transparent anode (20) which form up a light-propagation section and an optical section (12) formed in part of the anode (20) which are formed on the substrate (10), a first dielectric multilayer film (11a), an insulation layer (16) having an opening (16a) facing the optical section (12), a light-emitting layer (14), at least part of which is formed in the opening (16a) of the insulation layer (16), a cathode (22), and a second dielectric multilayer film (11b). The optical section (12) forms a one-dimensional photonic band gap and has a defect section which is set so that the energy level caused by defects is within a specific emission spectrum. The light-emitting device can emit light excelling in wavelength selectivity and having directivity, and can be applied not only to displays but also to optical communications and the like.

    摘要翻译: 发光器件(1000)包括发光器件部分(100)和透射来自发光器件部分的光的波导部分(200),并且发光器件部分和波导部分一体形成 在衬底(10)上。 发光器件部分(100)具有形成光传播部分的透明阳极(20)和形成在基板(10)上的部分阳极(20)的光学部分(12) 第一电介质多层膜(11a),具有面向光学部分(12)的开口(16a)的绝缘层(16),至少一部分形成在开口(16a)中的发光层 ),阴极(22)和第二电介质多层膜(11b)。 光学部分(12)形成一维光子带隙,并且具有设置为使得由缺陷引起的能量水平在特定发射光谱内的缺陷部分。 发光装置可以发出优异的波长选择性并且具有方向性,并且不仅可以应用于显示器,而且可以应用于光通信等。

    Liquid crystal display device having a two-dimensional light emitting element array
    5.
    发明授权
    Liquid crystal display device having a two-dimensional light emitting element array 有权
    具有二维发光元件阵列的液晶显示装置

    公开(公告)号:US06243148B1

    公开(公告)日:2001-06-05

    申请号:US09370985

    申请日:1999-08-10

    IPC分类号: G02F11335

    CPC分类号: G02F1/133621 G02F1/133603

    摘要: A liquid crystal display device has a light source and includes a two-dimensional light-emitting element array plate formed of a plurality of light-emitting elements arranged in a plane array, and a liquid crystal panel having a plurality of pixels. Each of the pixels corresponds to each of the light-emitting elements. A light-projecting portion of each of the light-emitting elements is disposed within a light-transmitting region of the corresponding pixel.

    摘要翻译: 液晶显示装置具有光源,并且包括由布置在平面阵列中的多个发光元件形成的二维发光元件阵列板和具有多个像素的液晶面板。 每个像素对应于每个发光元件。 每个发光元件的投光部分设置在相应像素的透光区域内。

    Surface-emitting semiconductor laser and method of manufacturing the same
    8.
    发明申请
    Surface-emitting semiconductor laser and method of manufacturing the same 审中-公开
    表面发射半导体激光器及其制造方法

    公开(公告)号:US20050180481A1

    公开(公告)日:2005-08-18

    申请号:US11050801

    申请日:2005-02-07

    摘要: To provide a high speed surface-emitting semiconductor laser including a photo-detector, which has some degrees of freedom in its structure, and a method of manufacturing the same. A surface-emitting semiconductor laser according to the present invention includes a light-emitting device and a photo-detector formed on the light-emitting device. The light-emitting device includes a first mirror, an active layer formed on the first mirror, and a second mirror formed on the active layer. The second mirror is a multi-layered film. At least one of layers composing the unit period of the second mirror is a dielectric layer.

    摘要翻译: 提供一种包括其结构具有一定自由度的光检测器的高速表面发射半导体激光器及其制造方法。 根据本发明的表面发射半导体激光器包括形成在发光器件上的发光器件和光检测器。 发光装置包括第一反射镜,形成在第一反射镜上的有源层和形成在有源层上的第二反射镜。 第二个镜子是一个多层膜。 构成第二反射镜的单位周期的层中的至少一层是电介质层。

    Light emitting device, display device, and electronic appliance
    9.
    发明授权
    Light emitting device, display device, and electronic appliance 有权
    发光装置,显示装置和电子设备

    公开(公告)号:US06512249B2

    公开(公告)日:2003-01-28

    申请号:US10080692

    申请日:2002-02-25

    IPC分类号: H01L2715

    摘要: A light emitting device includes a substrate, and a light emitting element section formed over the substrate. The light emitting element section includes a first light emitting layer in which light is generated due to electroluminescence, one pair of electrode layers used to apply an electric field to the first light emitting layer, a second light emitting layer which absorbs light generated in the first light emitting layer and generates light having a longer wavelength than a wavelength of the absorbed light, and one pair of dielectric multilayer films which are formed under and above the second light emitting layer, respectively. A wavelength range of light which is reflected by the pair of dielectric multilayer films includes a wavelength range of light generated in the second light emitting layer.

    摘要翻译: 发光器件包括衬底和形成在衬底上的发光元件部分。 发光元件部分包括由于电致发光而产生光的第一发光层,用于对第一发光层施加电场的一对电极层,吸收第一发光元件部分产生的光的第二发光层 产生具有比吸收光的波长长的波长的光,以及分别形成在第二发光层下方和上方的一对电介质多层膜。 由一对电介质多层膜反射的光的波长范围包括在第二发光层中产生的光的波长范围。

    Plane emission type semiconductor laser and method of manufacturing the same
    10.
    发明授权
    Plane emission type semiconductor laser and method of manufacturing the same 失效
    平面发射型半导体激光器及其制造方法

    公开(公告)号:US06501778B1

    公开(公告)日:2002-12-31

    申请号:US09284130

    申请日:1999-07-01

    IPC分类号: H01S522

    摘要: The present invention aims at providing a light source for a semiconductor laser beam scanner having high resolution in scanning and a high degree of mounting freedom, and suitable for emitting a laser beam from the surface. Therefore, a surface emission type semiconductor laser includes at least a first mirror 102, an active layer 103, a current narrowing layer 113, a contact layer 106, and a second mirror 111, which are formed on a semiconductor substrate 101; wherein the current narrowing layer 113 is made of a stripe AlAs layer 105, and an Al oxide layer 108 formed to surround the AlAs layer 105; the region of the contact layer 106, which overlaps the Al oxide layer, is formed in a comb shape 109, and independent contact electrodes 110 are respectively formed on the upper surfaces of the teeth of the comb shape 109 of the contact layer.

    摘要翻译: 本发明的目的在于提供一种用于半导体激光束扫描器的光源,该扫描器具有高分辨率的扫描和高度的安装自由度,并适用于从表面发射激光束。 因此,表面发射型半导体激光器至少包括形成在半导体衬底101上的第一反射镜102,有源层103,电流变窄层113,接触层106和第二反射镜111; 其中,电流变窄层113由条状AlAs层105和形成为包围AlAs层105的Al氧化物层108构成; 与Al氧化物层重叠的接触层106的区域形成为梳状109,并且在接触层的梳状109的齿的上表面上分别形成独立的接触电极110。