摘要:
An elastic copolymer composition which contains a copolymer having a content of polymer units based on vinylidene fluoride as low as from 0.5 to 15 mol %, which is satisfactory in polyol vulcanizability and which gives a vulcanizate excellent in heat resistance and oil resistance. This composition comprises a tetrafluoroethylene (35 to 65 mol %)/propylene (20 to 50 mol %)/vinylidene fluoride (0.5 to 15 mol %) copolymer, an organic quaternary ammonium hydroxide or a salt of an organic quaternary phosphonium compound with a nitrogen-containing heterocyclic compound, an organic polyhydroxy compound, and a metal oxide or a metal hydroxide, and optionally contains an amine compound.
摘要:
An organic semiconductor device of the present invention has an organic semiconductor layer disposed within a depression formed in a substrate; a drain electrode and a source electrode; and a gate electrode to face the organic semiconductor layer with a gate insulating layer interposed. Alternatively, an organic semiconductor device of the present invention has an insulating layer disposed on a substrate; an organic semiconductor layer disposed within a depression formed in the insulating layer; a drain electrode and a source electrode; and a gate electrode disposed to face the organic semiconductor layer with a gate insulating layer interposed.
摘要:
The present invention provides a surface emitting laser and a photodiode which permit secure mounting even in mounting by flip chip bonding, and high-speed modulation. The present invention also provides a manufacturing method therefor and an optoelectric integrated circuit using the surface emitting laser and the photodiode. Semiconductor stacked layers stacked on a semiconductor substrate have a light emitting portion and a reinforcing portion formed with a recessed portion provided therebetween, and a p-type ohmic electrode and an n-type ohmic electrode are formed on the top of the reinforcing portion. The p-type ohmic electrode is electrically connected to a p-type contact layer through a contact hole vertically formed in polyimide buried in the recessed portion to permit supply of a current to the light emitting portion in the thickness direction. The recessed portion has a groove formed to reach the semiconductor substrate, thereby suppressing the parasitic capacity between the p-type ohmic electrode and the n-type ohmic electrode.
摘要:
A light-emitting device (1000) includes a light-emitting device section (100) and a waveguide section (200) which transmits light from the light-emitting device section, and the light-emitting device section and the waveguide section are integrally formed on a substrate (10). The light-emitting device section (100) has a transparent anode (20) which form up a light-propagation section and an optical section (12) formed in part of the anode (20) which are formed on the substrate (10), a first dielectric multilayer film (11a), an insulation layer (16) having an opening (16a) facing the optical section (12), a light-emitting layer (14), at least part of which is formed in the opening (16a) of the insulation layer (16), a cathode (22), and a second dielectric multilayer film (11b). The optical section (12) forms a one-dimensional photonic band gap and has a defect section which is set so that the energy level caused by defects is within a specific emission spectrum. The light-emitting device can emit light excelling in wavelength selectivity and having directivity, and can be applied not only to displays but also to optical communications and the like.
摘要:
A liquid crystal display device has a light source and includes a two-dimensional light-emitting element array plate formed of a plurality of light-emitting elements arranged in a plane array, and a liquid crystal panel having a plurality of pixels. Each of the pixels corresponds to each of the light-emitting elements. A light-projecting portion of each of the light-emitting elements is disposed within a light-transmitting region of the corresponding pixel.
摘要:
A rubber composition having low friction is proposed which contains a thermoplastic fluororesin, a thermosetting fluororubber and a low-molecular weight fluorine-containing polymer.
摘要:
A method of manufacturing directional coupler includes forming a first waveguide over a substrate, forming a separate section on respective ends of the first waveguide, and forming a second waveguide stacked over the first waveguide, wherein the first waveguide and the second waveguide are patterned by ink-jet process. The first waveguide and the second waveguide may be formed so as to overlap each other. The method may further include forming a projecting portion on the substrate, wherein the first waveguide being formed on the projection portion.
摘要:
To provide a high speed surface-emitting semiconductor laser including a photo-detector, which has some degrees of freedom in its structure, and a method of manufacturing the same. A surface-emitting semiconductor laser according to the present invention includes a light-emitting device and a photo-detector formed on the light-emitting device. The light-emitting device includes a first mirror, an active layer formed on the first mirror, and a second mirror formed on the active layer. The second mirror is a multi-layered film. At least one of layers composing the unit period of the second mirror is a dielectric layer.
摘要:
A light emitting device includes a substrate, and a light emitting element section formed over the substrate. The light emitting element section includes a first light emitting layer in which light is generated due to electroluminescence, one pair of electrode layers used to apply an electric field to the first light emitting layer, a second light emitting layer which absorbs light generated in the first light emitting layer and generates light having a longer wavelength than a wavelength of the absorbed light, and one pair of dielectric multilayer films which are formed under and above the second light emitting layer, respectively. A wavelength range of light which is reflected by the pair of dielectric multilayer films includes a wavelength range of light generated in the second light emitting layer.
摘要:
The present invention aims at providing a light source for a semiconductor laser beam scanner having high resolution in scanning and a high degree of mounting freedom, and suitable for emitting a laser beam from the surface. Therefore, a surface emission type semiconductor laser includes at least a first mirror 102, an active layer 103, a current narrowing layer 113, a contact layer 106, and a second mirror 111, which are formed on a semiconductor substrate 101; wherein the current narrowing layer 113 is made of a stripe AlAs layer 105, and an Al oxide layer 108 formed to surround the AlAs layer 105; the region of the contact layer 106, which overlaps the Al oxide layer, is formed in a comb shape 109, and independent contact electrodes 110 are respectively formed on the upper surfaces of the teeth of the comb shape 109 of the contact layer.