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    Nitride semiconductor device
    1.
    发明授权
    Nitride semiconductor device 失效
    氮化物半导体器件

    公开(公告)号：US07425732B2

    公开(公告)日：2008-09-16

    申请号：US11410920

    申请日：2006-04-26

    申请人： Tetsuzo Ueda ,  Satoshi Nakazawa ,  Daisuke Ueda ,  Toshiyuki Takizawa

    发明人： Tetsuzo Ueda ,  Satoshi Nakazawa ,  Daisuke Ueda ,  Toshiyuki Takizawa

    IPC分类号： H01L33/00

    CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/1035 ,  H01L33/06 ,  H01S5/322 ,  H01S5/34333 ,  Y02E10/544

    摘要： A nitride semiconductor device includes an active layer including a first nitride semiconductor layer and a second nitride semiconductor layer which are periodically stacked, the second nitride semiconductor layer having a different composition from a composition of the first nitride semiconductor layer. An energy at a lower edge of a conduction band in the first nitride semiconductor layer is lower than an energy at a lower edge of a conduction band in the second nitride semiconductor layer, and an energy at an upper edge of a valence band in the first nitride semiconductor layer is lower than an energy at an upper edge of a valence band in the second nitride semiconductor layer.

    摘要翻译： 氮化物半导体器件包括包含周期性堆叠的第一氮化物半导体层和第二氮化物半导体层的有源层，所述第二氮化物半导体层与第一氮化物半导体层的组成不同。 在第一氮化物半导体层中的导带的下边缘处的能量低于第二氮化物半导体层中的导带的下边缘处的能量，并且第一氮化物半导体层中的导带的上边缘处的能量 氮化物半导体层比在第二氮化物半导体层中的价带的上边缘处的能量低。

    Nitride semiconductor device
    2.
    发明申请
    Nitride semiconductor device 失效
    氮化物半导体器件

    公开(公告)号：US20060244003A1

    公开(公告)日：2006-11-02

    申请号：US11410920

    申请日：2006-04-26

    申请人： Tetsuzo Ueda ,  Satoshi Nakazawa ,  Daisuke Ueda ,  Toshiyuki Takizawa

    发明人： Tetsuzo Ueda ,  Satoshi Nakazawa ,  Daisuke Ueda ,  Toshiyuki Takizawa

    IPC分类号： H01L33/00

    CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/1035 ,  H01L33/06 ,  H01S5/322 ,  H01S5/34333 ,  Y02E10/544

    摘要： A nitride semiconductor device includes an active layer including a first nitride semiconductor layer and a second nitride semiconductor layer which are periodically stacked, the second nitride semiconductor layer having a different composition from a composition of the first nitride semiconductor layer. An energy at a lower edge of a conduction band in the first nitride semiconductor layer is lower than an energy at a lower edge of a conduction band in the second nitride semiconductor layer, and an energy at an upper edge of a valence band in the first nitride semiconductor layer is lower than an energy at an upper edge of a valence band in the second nitride semiconductor layer.

    摘要翻译： 氮化物半导体器件包括包含周期性堆叠的第一氮化物半导体层和第二氮化物半导体层的有源层，所述第二氮化物半导体层与第一氮化物半导体层的组成不同。 在第一氮化物半导体层中的导带的下边缘处的能量低于第二氮化物半导体层中的导带的下边缘处的能量，并且第一氮化物半导体层中的导带的上边缘处的能量 氮化物半导体层比在第二氮化物半导体层中的价带的上边缘处的能量低。

    Semiconductor device and method for fabricating the same
    4.
    发明授权
    Semiconductor device and method for fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US07465968B2

    公开(公告)日：2008-12-16

    申请号：US11600067

    申请日：2006-11-16

    申请人： Tetsuzo Ueda ,  Satoshi Nakazawa ,  Tatsuo Morita

    发明人： Tetsuzo Ueda ,  Satoshi Nakazawa ,  Tatsuo Morita

    IPC分类号： H01L29/737

    CPC分类号： H01L29/452 ,  H01L29/045 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/8122

    摘要： A semiconductor device includes: a first nitride semiconductor layer having at least one projection on an upper surface thereof; a second nitride semiconductor layer formed on a top surface of the projection of the first nitride semiconductor layer and having a higher carrier concentration than the first nitride semiconductor layer; a first electrode formed on the second nitride semiconductor layer so as to overhang like a canopy and functioning as one of a source and a drain; and a second electrode formed to the side of the projection on the first nitride semiconductor layer and functioning as a gate.

    摘要翻译： 半导体器件包括：在其上表面上具有至少一个突起的第一氮化物半导体层; 第二氮化物半导体层，其形成在所述第一氮化物半导体层的所述突起的顶表面上，并且具有比所述第一氮化物半导体层更高的载流子浓度; 第一电极，形成在第二氮化物半导体层上，以便像顶盖一样悬垂并用作源极和漏极之一; 以及第二电极，其形成在第一氮化物半导体层上的突起侧并用作栅极。

    NITRIDE SEMICONDUCTOR DEVICE
    8.
    发明申请
    NITRIDE SEMICONDUCTOR DEVICE 审中-公开
    氮化物半导体器件

    公开(公告)号：US20110175142A1

    公开(公告)日：2011-07-21

    申请号：US13120382

    申请日：2009-08-26

    申请人： Naohiro Tsurumi ,  Satoshi Nakazawa ,  Tetsuzo Ueda

    发明人： Naohiro Tsurumi ,  Satoshi Nakazawa ,  Tetsuzo Ueda

    IPC分类号： H01L29/80

    CPC分类号： H01L29/1075 ,  H01L23/481 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/4175 ,  H01L29/7787 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A nitride semiconductor device includes a first nitride semiconductor layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer, and having a wider bad gap than the first nitride semiconductor layer; a source electrode, a drain electrode, and a gate electrode, which are formed on the second nitride semiconductor layer; a high resistive layer formed lower than the first nitride semiconductor layer; a conductive layer formed under and in contact with the high resistive layer; a lower insulating layer formed under the conductive layer; and a bias terminal electrically connected to the conductive layer.

    摘要翻译： 氮化物半导体器件包括第一氮化物半导体层; 形成在所述第一氮化物半导体层上并且具有比所述第一氮化物半导体层更宽的不良间隙的第二氮化物半导体层; 源电极，漏电极和栅电极，形成在第二氮化物半导体层上; 形成为低于第一氮化物半导体层的高电阻层; 形成在所述高电阻层之下并与所述高电阻层接触的导电层; 形成在导电层下面的下绝缘层; 以及电连接到所述导电层的偏置端子。