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    Closed loop control over delivery of liquid material to semiconductor processing tool
    1.
    发明授权
    Closed loop control over delivery of liquid material to semiconductor processing tool 失效
    将液体材料输送到半导体加工工具的闭环控制

    公开(公告)号：US06834777B2

    公开(公告)日：2004-12-28

    申请号：US10409368

    申请日：2003-04-07

    申请人： Thomas H. Osterheld ,  Benjamin A. Bonner ,  Michael W. Richter

    发明人： Thomas H. Osterheld ,  Benjamin A. Bonner ,  Michael W. Richter

    IPC分类号： B67D5008

    CPC分类号： H01L21/67253

    摘要： Liquid material is precisely dispensed to a semiconductor processing tool utilizing closed loop control. In one embodiment, CMP slurry material of known density is supplied from a reservoir/mixing vessel to a dispense module. The dispense module also receives a flow of an inert gas through a gas supply valve. Positive pressure arising within the dispense module due to the inert gas flow causes an outflow of slurry from the dispense module to the CMP platen. The rate of flow of the slurry to the CMP platen over time is determined by monitoring the change (decline) in weight of the filled dispense module. In a similar manner, variation in the rate of flow of slurry over time may be detected by monitoring variation in changes in weight of the filled dispense module over time. A regulator structure in electronic communication with the dispense module and with the gas supply valve receives first signals at different time points indicating the weight change of the dispense module. In response, the regulator structure communicates a second signal to the gas supply valve, reflecting an appropriate change in the rate of flow of CMP slurry material to the platen. This second signal causes the gas supply valve to vary the flow of inert gas to the dispense module in order to control changes in the flow rate of the slurry.

    摘要翻译： 利用闭环控制将液体材料精确地分配到半导体加工工具中。 在一个实施例中，已知密度的CMP浆料材料从储存器/混合容器供应到分配模块。 分配模块还通过气体供给阀接收惰性气体流。 在分配模块中由于惰性气体流动引起的正压力导致浆料从分配模块流出到CMP压板。 通过监测填充的分配模块的重量变化（下降）来确定浆料在一段时间内流向CMP压板的速率。 以类似的方式，可以通过监测填充的分配模块的重量变化随时间的变化来检测浆料随着时间的流动速率的变化。 与分配模块和供气阀电子通信的调节器结构在不同的时间点接收指示分配模块的重量变化的第一信号。 作为响应，调节器结构将第二信号传递到气体供应阀，反映了CMP浆料材料流向压板的适当变化。 该第二信号使气体供应阀改变与分配模块的惰性气体的流量，以便控制浆料流速的变化。

    Closed loop control over delivery of liquid material to semiconductor processing tool
    2.
    发明授权
    Closed loop control over delivery of liquid material to semiconductor processing tool 失效
    将液体材料输送到半导体加工工具的闭环控制

    公开(公告)号：US06561381B1

    公开(公告)日：2003-05-13

    申请号：US09717720

    申请日：2000-11-20

    申请人： Thomas H. Osterheld ,  Benjamin A. Bonner ,  Michael W. Richter

    发明人： Thomas H. Osterheld ,  Benjamin A. Bonner ,  Michael W. Richter

    IPC分类号： B67B700

    CPC分类号： H01L21/67253

    摘要： Liquid material is precisely dispensed to a semiconductor processing tool utilizing closed loop control. In one embodiment, CMP slurry material of known density is supplied from a reservoir/mixing vessel to a dispense module. The dispense module also receives a flow of an inert gas through a gas supply valve. Positive pressure arising within the dispense module due to the inert gas flow causes an outflow of slurry from the dispense module to the CMP platen. The rate of flow of the slurry to the CMP platen over time is determined by monitoring the change (decline) in weight of the filled dispense module. In a similar manner, variation in the rate of flow of slurry over time may be detected by monitoring variation in changes in weight of the filled dispense module over time. A regulator structure in electronic communication with the dispense module and with the gas supply valve receives first signals at different time points indicating the weight change of the dispense module. In response, the regulator structure communicates a second signal to the gas supply valve, reflecting an appropriate change in the rate of flow of CMP slurry material to the platen. This second signal causes the gas supply valve to vary the flow of inert gas to the dispense module in order to control changes in the flow rate of the slurry.

    摘要翻译： 利用闭环控制将液体材料精确地分配到半导体加工工具中。 在一个实施例中，已知密度的CMP浆料材料从储存器/混合容器供应到分配模块。 分配模块还通过气体供给阀接收惰性气体流。 在分配模块中由于惰性气体流动引起的正压力导致浆料从分配模块流出到CMP压板。 通过监测填充的分配模块的重量变化（下降）来确定浆料在一段时间内流向CMP压板的速率。 以类似的方式，可以通过监测填充的分配模块的重量变化随时间的变化来检测浆料随着时间的流动速率的变化。 与分配模块和供气阀电子通信的调节器结构在不同的时间点接收指示分配模块的重量变化的第一信号。 作为响应，调节器结构将第二信号传递到气体供应阀，反映了CMP浆料材料流向压板的适当变化。 该第二信号使气体供应阀改变与分配模块的惰性气体的流量，以便控制浆料流速的变化。

    Utility wafer for chemical mechanical polishing
    3.
    发明授权
    Utility wafer for chemical mechanical polishing 有权
    用于化学机械抛光的实用晶圆

    公开(公告)号：US06361405B1

    公开(公告)日：2002-03-26

    申请号：US09544734

    申请日：2000-04-06

    申请人： Jeffrey D. David ,  Benjamin A. Bonner ,  Thomas H. Osterheld ,  Sidney Huey

    发明人： Jeffrey D. David ,  Benjamin A. Bonner ,  Thomas H. Osterheld ,  Sidney Huey

    IPC分类号： B24B100

    CPC分类号： B24B37/042 ,  B23K26/3576 ,  H01L2223/54493

    摘要： A utility wafer, more specifically, an utility wafer for simulating a workpiece in a semiconductor processing system. The utility wafer includes a first side, a second side and a peripheral edge wherein one or both edges of the peripheral edge are relieved to remove the otherwise sharp edge. In one embodiment, the peripheral edge is polished. The utility wafer is resistant to chipping, stress cracking and breakage when undergoing chemical mechanical planarization.

    摘要翻译： 一种效用晶片，更具体地说，一种用于在半导体处理系统中模拟工件的效用晶片。 实用晶片包括第一侧，第二侧和周边边缘，其中外围边缘的一个或两个边缘被释放以除去其它锋利的边缘。 在一个实施例中，抛光周边。 实用晶圆在进行化学机械平面化时具有抗碎裂，应力开裂和断裂的能力。

    Substrate polishing with reduced contamination
    5.
    发明授权
    Substrate polishing with reduced contamination 有权
    底物抛光，污染减少

    公开(公告)号：US06251001B1

    公开(公告)日：2001-06-26

    申请号：US09307674

    申请日：1999-05-10

    申请人： Jay D. Pinson ,  Brian J. Brown ,  Thomas H. Osterheld ,  Benjamin A. Bonner ,  Doyle E. Bennett ,  Nitin Shah ,  Paul Flores

    发明人： Jay D. Pinson ,  Brian J. Brown ,  Thomas H. Osterheld ,  Benjamin A. Bonner ,  Doyle E. Bennett ,  Nitin Shah ,  Paul Flores

    IPC分类号： B24B5502

    CPC分类号： B24B37/04 ,  B24B55/02

    摘要： Systems and methods for polishing a substrate with reduced contamination are described. Moist air is directed to one or more surfaces in proximity to the polishing surface and exposed to airborne slurry particles generated during polishing. By maintaining the atmosphere in the vicinity of the exposed surfaces at an elevated relative humidity level, airborne slurry particles adhering to the exposed surfaces remain in suspension and, therefore, may be easily cleaned, e.g., during a high pressure rinse cycle. This feature reduces the likelihood that slurry particles will accumulate on exposed surfaces of the polishing apparatus and flake off while a substrate is being polished, reducing the likelihood of substrate defects caused by such slurry contamination.

    摘要翻译： 描述了用于抛光具有降低的污染物的基底的系统和方法。 潮湿空气被引导到靠近抛光表面的一个或多个表面，并暴露于在抛光期间产生的空气中的浆料颗粒。 通过在升高的相对湿度水平下保持暴露表面附近的气氛，附着在暴露表面上的气载浆料颗粒保持悬浮状态，因此可以容易地例如在高压冲洗循环中清洁。 该特征降低了浆料颗粒在抛光装置的暴露表面上积聚的可能性，并且在抛光衬底时剥落，从而降低了由这种浆料污染引起的衬底缺陷的可能性。