公开(公告)号：US20240162043A1

公开(公告)日：2024-05-16

申请号：US17988217

申请日：2022-11-16

Applicant: Tokyo Electron Limited

Inventor： Du Zhang ,  Yu-Hao Tsai ,  Mingmei Wang

IPC: H01L21/3065 ,  H01L21/02

CPC classification number: H01L21/30655 ,  H01L21/02118 ,  H01L21/02252 ,  H01L21/0234

Abstract: A method for processing a substrate that includes: performing a cyclic process including a plurality of cycles, where the cyclic process includes, forming a carbon-containing layer over sidewalls of a recess in a Si-containing dielectric layer of the substrate, the forming including exposing the substrate disposed in a plasma processing chamber to a first plasma generated from a first gas including carbon and hydrogen, modifying a surface of the carbon-containing layer by exposing the substrate to a second plasma generated from a second gas including oxygen, and forming a passivation layer over the modified surface of the carbon-containing layer by exposing the substrate to a third gas including B, Si, or Al.

公开(公告)号：US20240071746A1

公开(公告)日：2024-02-29

申请号：US17896961

申请日：2022-08-26

Applicant: Tokyo Electron Limited

Inventor： Yu-Hao Tsai ,  Hojin Kim ,  Mingmei Wang

IPC: H01L21/02 ,  H01L21/18

CPC classification number: H01L21/02252 ,  H01L21/02052 ,  H01L21/02323 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/02343 ,  H01L21/187

Abstract: A method includes providing a first substrate having a first surface and a second substrate having a second surface, where the first surface and the second surface each include a silicon-based dielectric layer, applying hydrogen plasma to form hydrogen-terminated groups on the silicon-based dielectric layer, applying oxygen plasma to oxidize the silicon-based dielectric layer including the hydrogen-terminated groups, applying nitrogen plasma to the oxidized silicon-based dielectric layer, thereby forming a treated silicon-based dielectric layer, rinsing the treated silicon-based dielectric layer, and coupling the first substrate to the second substrate by physically contacting the rinsed and treated silicon-based dielectric layer on the first surface with the rinsed and treated silicon-based dielectric layer on the second surface.

公开(公告)号：US20220199418A1

公开(公告)日：2022-06-23

申请号：US17521958

申请日：2021-11-09

Applicant: Tokyo Electron Limited ,  Université d'Orléans

Inventor： Du Zhang ,  Hojin Kim ,  Shigeru Tahara ,  Kaoru Maekawa ,  Mingmei Wang ,  Jacques Faguet ,  Remi Dussart ,  Thomas Tillocher ,  Philippe Lefaucheux ,  Gaëlle Antoun

IPC: H01L21/311 ,  H01L21/02

Abstract: A method for processing a substrate that includes: loading the substrate in a plasma processing chamber; performing a cyclic plasma etch process including a plurality of cycles, where each cycle of the plurality of cycles includes: generating a first plasma from a first gas mixture including a fluorosilane and oxygen; performing a deposition step by exposing the substrate to the first plasma to form a passivation film including silicon and fluorine; generating a second plasma from a second gas mixture including a noble gas; and performing an etch step by exposing the substrate to the second plasma.

公开(公告)号：US20210183656A1

公开(公告)日：2021-06-17

申请号：US17118107

申请日：2020-12-10

Applicant: Tokyo Electron Limited

Inventor： Katie Lutker-Lee ,  Jake Kaminsky ,  Yu-Hao Tsai ,  Angelique Raley ,  Mingmei Wang

IPC: H01L21/033 ,  H01L21/027

Abstract: A method of forming a semiconductor device includes depositing a first layer over a substrate and patterning the first layer using an extreme ultraviolet (EUV) lithography process to form a patterned layer and expose portions of the substrate. The method includes, in a plasma processing chamber, generating a first plasma from a gas mixture including SiCl4 and one or more of argon, helium, nitrogen, and hydrogen. The method includes exposing the substrate to the first plasma to deposit a second layer including silicon over the patterned layer.

公开(公告)号：US20180082842A1

公开(公告)日：2018-03-22

申请号：US15708206

申请日：2017-09-19

Applicant: Tokyo Electron Limited

Inventor： Christopher Talone ,  Andrew Nolan ,  Mingmei Wang ,  Alok Ranjan

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/66 ,  H01L21/311 ,  H01L21/67

CPC classification number: H01L21/0337 ,  H01L21/0206 ,  H01L21/0332 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069 ,  H01L21/67253 ,  H01L21/6831 ,  H01L22/26

Abstract: Systems and methods for in situ hard mask removal are described. In an embodiment, a method includes receiving a semiconductor workpiece comprising a substrate, an intermediary layer, a hard mask layer, and a photoresist layer in an etch chamber. The method may also include etching the hard mask layer to open a region left exposed by the photoresist layer. Additionally, such an embodiment may include etching the intermediary layer in a region left exposed by the hard mask layer. The method may also include removing the hard mask layer. In such embodiments, etching the hard mask layer, etching the intermediary layer, and removing the hard mask layer are performed in the etch chamber, and without the wafer being removed from the etch chamber.

公开(公告)号：US09881807B2

公开(公告)日：2018-01-30

申请号：US15083363

申请日：2016-03-29

Applicant: Tokyo Electron Limited

Inventor： Alok Ranjan ,  Sonam Sherpa ,  Mingmei Wang

IPC: H01L21/302 ,  H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32963

Abstract: A method of etching a layer on a substrate includes disposing a substrate in a plasma processing system configured to facilitate an etching process, performing an atomic layer etching process cycle to etch a monolayer of an exposed surface of the substrate, and repeating the atomic layer etching process cycle until a target depth is reached. Each process cycle etches the monolayer from the exposed surface. The atomic layer etching process cycle sequentially includes forming an adsorption monolayer comprising an etchant on an exposed surface of the substrate by introducing the etchant while concurrently coupling electromagnetic power to the plasma processing system at a power level targeted to achieve an etchant radical flux at the substrate greater than a total ion flux at the substrate, which power level is less than or equal to 50 W, purging the plasma processing system to remove any excess etchant, desorbing the adsorption monolayer by exposing the adsorption monolayer to gas ions to activate a reaction of the etchant, and purging the plasma processing system again.

公开(公告)号：US11837471B2

公开(公告)日：2023-12-05

申请号：US17118107

申请日：2020-12-10

Applicant: Tokyo Electron Limited

Inventor： Katie Lutker-Lee ,  Jake Kaminsky ,  Yu-Hao Tsai ,  Angelique Raley ,  Mingmei Wang

IPC: H01L21/033 ,  H01L21/027 ,  G03F7/20

CPC classification number: H01L21/0338 ,  H01L21/0274 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  G03F7/2004

Abstract: A method of forming a semiconductor device includes depositing a first layer over a substrate and patterning the first layer using an extreme ultraviolet (EUV) lithography process to form a patterned layer and expose portions of the substrate. The method includes, in a plasma processing chamber, generating a first plasma from a gas mixture including SiCl4 and one or more of argon, helium, nitrogen, and hydrogen. The method includes exposing the substrate to the first plasma to deposit a second layer including silicon over the patterned layer.

公开(公告)号：US11804380B2

公开(公告)日：2023-10-31

申请号：US17515133

申请日：2021-10-29

Applicant: Tokyo Electron Limited

Inventor： Du Zhang ,  Yu-Hao Tsai ,  Mingmei Wang

IPC: H01L21/311

CPC classification number: H01L21/31116

Abstract: A method of high-throughput dry etching of a film by proton-mediated catalyst formation. The method includes providing a substrate having a film thereon containing silicon-oxygen components, silicon-nitrogen components, or both, introducing an etching gas in the process chamber, plasma-exciting the etching gas, and exposing the film to the plasma-excited etching gas to etch the film. In one example, the etching gas contains at least three different gases that include a fluorine-containing gas, a hydrogen-containing gas, and a nitrogen-containing gas, plasma-exciting the etching gas. In another example, the etching gas contains at least four different gases that include a fluorine-containing gas, a hydrogen-containing gas, an oxygen-containing gas, and a silicon-containing gas.

公开(公告)号：US20220246402A1

公开(公告)日：2022-08-04

申请号：US17307654

申请日：2021-05-04

Applicant: Tokyo Electron Limited

Inventor： Yunho Kim ,  Yanxiang Shi ,  Mingmei Wang

IPC: H01J37/32

Abstract: A plasma processing system includes a vacuum system, a plasma processing chamber including a chamber cavity coupled to the vacuum system, a substrate holder including a surface inside the chamber cavity, a radio frequency (RF) source electrode coupled to an RF power source, the RF source electrode configured to ignite plasma in the chamber cavity. The system includes microwave source coupled to a microwave oscillator, and an electromagnetic (EM) metasurface, where the EM metasurface having a major surface electromagnetically coupled to the microwave source, the major surface configured to couple microwave power to the plasma in the chamber cavity.

公开(公告)号：US20220199410A1

公开(公告)日：2022-06-23

申请号：US17550182

申请日：2021-12-14

Applicant: Tokyo Electron Limited

Inventor： Du Zhang ,  Shihsheng Chang ,  Yunho Kim ,  Mingmei Wang ,  Andrew Metz

IPC: H01L21/3065 ,  H01L21/308

Abstract: A method for etching high-aspect ratio recessed features in an amorphous carbon layer is presented. The method includes providing a substrate containing an amorphous carbon layer and a patterned mask layer, plasma-etching a recessed feature through less than an entire thickness of the amorphous carbon layer using the patterned mask, forming a passivation layer on a sidewall of the etched amorphous carbon layer in the recessed feature by exposing the substrate to a passivation gas in the absence of a plasma, and repeating the plasma-etching and forming the passivation layer at least once to extend the recessed feature in the amorphous carbon layer.