公开(公告)号：US20180164696A1

公开(公告)日：2018-06-14

申请号：US15828906

申请日：2017-12-01

申请人： Tokyo Electron Limited

发明人： Teruhiko MORIYA ,  Masaru TOMONO ,  Ryo SHIMADA ,  Makoto HAYAKAWA ,  Seiji NAGAHARA

IPC分类号： G03F7/20

摘要： An optical processing apparatus includes: a housing; a stage; and a light irradiation unit configured to cause a light source unit to emit light so as to form a strip-like irradiation area extending over an area wider than a width of a substrate in a right and left direction. The stage and the light irradiation unit are moved by a moving mechanism relatively to each other in a back and forth direction. Light emitted from the light irradiation unit is deviated by a light-path changing unit from a relative movement area of a substrate. When a substrate is relatively moved below the light irradiation unit without the intension of being subjected to a light irradiation process, a control unit outputs a control signal such that an irradiation area is not formed on a surface of the substrate by the light-path changing unit, while the light source unit emitting light.

公开(公告)号：US20160327869A1

公开(公告)日：2016-11-10

申请号：US15109917

申请日：2015-01-13

申请人： TOKYO ELECTRON LIMITED

发明人： Seiji NAGAHARA ,  Gousuke SHIRAISHI ,  Satoru SHIMURA ,  Kousuke YOSHIHARA ,  Shinichiro KAWAKAMI ,  Masaru TOMONO ,  Yuichi TERASHITA ,  Hironori MIZOGUCHI

IPC分类号： G03F7/20

CPC分类号： G03F7/7055 ,  G03F7/2022 ,  G03F7/70558

摘要： A technique which, in forming a resist pattern on a wafer, can achieve high resolution and high in-plane uniformity of pattern line width. After forming a resist film on a wafer W and subsequently performing pattern exposure by means of a pattern exposure apparatus, the entire pattern exposure area is exposed by using a flood exposure apparatus. During the flood exposure, the exposure amount is adjusted depending on the exposure position on the wafer based on information on the in-plane distribution of the line width of a resist pattern, previously obtained from an inspection apparatus. Methods for adjusting the exposure amount include a method which adjusts the exposure amount while moving a strip-shaped irradiation area corresponding to the diameter of the wafer, a method which involves intermittently moving an irradiation area, corresponding to a shot area in the preceding pattern exposure, to adjust the exposure amount for each chip.

摘要翻译： 在晶片上形成抗蚀剂图案的技术可以实现图案线宽度的高分辨率和高平面均匀性。 在晶片W上形成抗蚀剂膜，然后通过图案曝光装置进行图案曝光，通过使用淹光曝光装置曝光整个图案曝光区域。 在曝光期间，根据先前从检查装置获得的抗蚀剂图案的线宽的面内分布的信息，根据晶片上的曝光位置来调节曝光量。 用于调节曝光量的方法包括在移动对应于晶片直径的条形照射区域的同时调节曝光量的方法，涉及间歇地移动照射区域的方法，对应于先前图案曝光中的照射区域 ，调整每个芯片的曝光量。

公开(公告)号：US20230082557A1

公开(公告)日：2023-03-16

申请号：US17791834

申请日：2021-01-15

申请人： LINTFIELD LIMITED ,  TOKYO ELECTRON LIMITED

发明人： Christopher WALL ,  Cong-Que DINH ,  Seiji NAGAHARA

IPC分类号： G03F7/039 ,  C07D335/16 ,  C07D495/10 ,  C07D519/00 ,  G03F7/038

摘要： Latent photoinitiator compounds are described, as well as compositions containing such compounds and their uses in photoinitiated methods for producing photoresist structured.

公开(公告)号：US20170052450A1

公开(公告)日：2017-02-23

申请号：US15241315

申请日：2016-08-19

申请人： OSAKA UNIVERSITY ,  TOKYO ELECTRON LIMITED

发明人： Hisashi NAKAGAWA ,  Takehiko NARUOKA ,  Tomoki NAGAI ,  Seiichi TAGAWA ,  Akihiro OSHIMA ,  Seiji NAGAHARA

IPC分类号： G03F7/20 ,  G03F7/039 ,  G03F7/32 ,  G03F7/16 ,  G03F7/38

CPC分类号： G03F7/2022 ,  G03F7/0397 ,  G03F7/162 ,  G03F7/2032 ,  G03F7/30 ,  G03F7/322 ,  G03F7/38

摘要： A pattern-forming method comprises applying a chemically amplified resist material on an antireflective film formed on a substrate to form a resist material film. The resist material film is patternwise exposed to ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to nonionizing radiation having a wavelength greater than the nonionizing radiation for the patternwise exposing and greater than 200 nm. The resist material film floodwise exposed is baked. The resist material film baked is developed with a developer solution. An extinction coefficient of the antireflective film for the nonionizing radiation employed for the floodwise exposing is no less than 0.1. The chemically amplified resist material comprises a base component and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure.

摘要翻译： 图案形成方法包括在形成在基板上的抗反射膜上施加化学放大的抗蚀剂材料以形成抗蚀剂材料膜。 抗蚀剂材料膜图案地暴露于波长不大于400nm的电离辐射或非离子化辐射。 图案曝光的抗蚀剂材料膜被洪泛地暴露于波长大于用于图案曝光的非离子化辐射的波长的大于200nm的非离子化辐射。 烘烤曝光的抗蚀剂材料膜。 用显影剂溶液显影烘烤的抗蚀剂材料膜。 用于液体曝光的非离子辐射防反射膜的消光系数不小于0.1。 化学放大抗蚀剂材料包括能够在曝光时产生辐射敏感敏化剂和酸的基础成分和生成成分。

公开(公告)号：US20150241793A1

公开(公告)日：2015-08-27

申请号：US14628682

申请日：2015-02-23

申请人： TOKYO ELECTRON LIMITED

发明人： Michael A. CARCASI ,  Mark H. SOMERVELL ,  Joshua S. HOOGE ,  Benjamen M. RATHSACK ,  Seiji NAGAHARA

IPC分类号： G03F7/20

CPC分类号： G03F7/70608 ,  G03F7/2022 ,  G03F7/70633 ,  G03F7/70675

摘要： Methods for measuring photosensitizer concentrations in a photo-sensitized chemically-amplified resist (PS-CAR) patterning process are described. Measured photosensitizer concentrations can be used in feedback and feedforward control of the patterning process and subsequent processing steps. Also described is a metrology target formed using PS-CAR resist, and a substrate including a plurality of such metrology targets to facilitate patterning process control.

摘要翻译： 描述了光敏化学增幅抗蚀剂（PS-CAR）图案化方法中测量光敏剂浓度的方法。 测量的光敏剂浓度可用于图案化过程的反馈和前馈控制以及随后的处理步骤。 还描述了使用PS-CAR抗蚀剂形成的计量目标，以及包括多个这样的计量目标以便于图案化过程控制的基板。

公开(公告)号：US20240288768A1

公开(公告)日：2024-08-29

申请号：US18563382

申请日：2022-05-19

申请人： Tokyo Electron Limited

发明人： Seiji NAGAHARA ,  Congque DINH ,  Makoto MURAMATSU

IPC分类号： G03F7/028 ,  G03F7/038 ,  G03F7/16 ,  G03F7/20 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

CPC分类号： G03F7/028 ,  G03F7/038 ,  G03F7/168 ,  G03F7/2004 ,  G03F7/2026 ,  H01L21/0275 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139

摘要： Disclosed is a photoresist composition comprising a non-chemically amplified resist material and a sensitizer precursor, wherein the sensitizer precursor is a compound that, upon irradiation with ionizing radiation or non-ionizing radiation having a wavelength of 300 nm or less, generates a sensitizer that absorbs non-ionizing radiation having a wavelength more than 300 nm.

公开(公告)号：US20240126175A1

公开(公告)日：2024-04-18

申请号：US18470491

申请日：2023-09-20

申请人： Tokyo Electron Limited

发明人： Seiji NAGAHARA ,  Congque DINH ,  Makoto MURAMATSU ,  Kayoko CHO

IPC分类号： G03F7/40

CPC分类号： G03F7/40 ,  G03F7/11

摘要： Disclosed is a method for forming a resist pattern including, in the following order, irradiating a part of a resist film containing a resist material with a first radiation, baking the resist film, irradiating the entire region including the part irradiated with the first radiation and other parts in the resist film with a second radiation in a batch, and forming a resist pattern by development for removing a part of the resist film.

公开(公告)号：US20210277017A1

公开(公告)日：2021-09-09

申请号：US17261267

申请日：2019-07-18

申请人： LINTFIELD LIMITED ,  TOKYO ELECTRON LIMITED

发明人： Christopher Wall ,  Seiji NAGAHARA

IPC分类号： C07D495/10 ,  C07D335/16 ,  G03F7/004 ,  G03F7/031 ,  C07D495/04 ,  C07D495/20

摘要： Latent photoinitiator compounds are described, as well as compositions containing such compounds and their uses in photoinitiated methods for producing photoresist structures.

公开(公告)号：US20180173103A1

公开(公告)日：2018-06-21

申请号：US15828870

申请日：2017-12-01

申请人： Tokyo Electron Limited

发明人： Seiji NAGAHARA ,  Masaru Tomono ,  Nobutaka Fukunaga ,  Gousuke Shiraishi

IPC分类号： G03F7/20 ,  H01L21/027

CPC分类号： G03F7/7055 ,  G03F7/16 ,  G03F7/201 ,  G03F7/2022 ,  G03F7/30 ,  G03F7/7005 ,  G03F7/70133 ,  G03F7/70558 ,  H01L21/027 ,  H01L21/67115 ,  H01L21/6715

摘要： An illuminance distribution response amount as the change amount of the illuminance distribution pattern, associating the position in the irradiation region in the lengthwise direction with the change amount of the illuminance with respect to the change in the drive current, has previously been acquired and stored in a storage unit for each light-emitting block. There is provided an arithmetic processing unit that determines (estimates) a current command value of each of the light-emitting blocks based on a present current command value of each of the light-emitting blocks and the change amount of the illuminance distribution pattern of each light-emitting block in order to bring a present illuminance distribution pattern in the irradiation region in a lengthwise direction close to a target illuminance distribution pattern.

公开(公告)号：US20170031245A1

公开(公告)日：2017-02-02

申请号：US15106915

申请日：2014-12-15

申请人： Tokyo Electron Limited ,  Osaka University

发明人： Seiji NAGAHARA ,  Gousuke SHIRAISHI ,  Satoru SHIMURA ,  Kousuke YOSHIHARA ,  Shinichiro KAWAKAMI ,  Masaru TOMONO ,  Seiichi TAGAWA ,  Akihiro OSHIMA

IPC分类号： G03F7/20 ,  H01L21/67

CPC分类号： G03F7/2004 ,  G03F7/20 ,  H01L21/67098 ,  H01L21/67115 ,  H01L21/67196 ,  H01L21/67225

摘要： A substrate treatment system for treating a substrate, includes: a treatment station in which a plurality of treatment apparatuses which treat the substrate are provided; an interface station which directly or indirectly delivers the substrate between an exposure apparatus which is provided outside the substrate treatment system and performs exposure of patterns on a resist film on the substrate, and the substrate treatment system; a light irradiation apparatus which performs post-exposure using UV light on the resist film on the substrate after the exposure of patterns is performed; and a post-exposure station which houses the light irradiation apparatus and is adjustable to a reduced pressure or inert gas atmosphere, wherein the post-exposure station is connected to the exposure apparatus directly or indirectly via a space which is adjustable to a reduced pressure or inert gas atmosphere.

摘要翻译： 一种用于处理基板的基板处理系统，包括：设置有多个处理基板的处理装置的处理台; 接口站，其在设置在基板处理系统之外的曝光装置之间直接或间接地传送基板，并且在基板上的抗蚀剂膜上进行图案的曝光;以及基板处理系统; 执行曝光图案之后，使用UV光对基板上的抗蚀剂膜进行后曝光的光照射装置; 以及容纳光照射装置并且可以减压或惰性气体气氛调节的后曝光站，其中后曝光站通过可调节到减压的空间直接或间接连接到曝光装置，或 惰性气体气氛。