公开(公告)号：US20220165568A1

公开(公告)日：2022-05-26

申请号：US17438132

申请日：2020-02-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Nobutake KABUKI ,  Masahito SUGIURA ,  Takashi MATSUMOTO ,  Kenjiro KOIZUMI ,  Ryota IFUKU

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/505 ,  H01J37/32

Abstract: A method for forming a hexagonal boron nitride film comprises: providing a substrate; and generating plasma of a boron-containing gas and a nitrogen-containing gas in a plasma generation region located at a position apart from the substrate to form the hexagonal boron nitride film on the surface of the substrate by plasma CVD using plasma diffused from the plasma generation region.

公开(公告)号：US20230420294A1

公开(公告)日：2023-12-28

申请号：US18252408

申请日：2021-11-02

Applicant: Tokyo Electron Limited

Inventor： Makoto WADA ,  Nobutake KABUKI ,  Ryota IFUKU ,  Takashi MATSUMOTO

IPC: H01L21/768 ,  H01L21/02 ,  H01J37/32 ,  C23C16/458 ,  C23C16/02 ,  C23C16/26 ,  C23C16/50 ,  C01B32/186

CPC classification number: H01L21/7685 ,  H01L21/02068 ,  H01J37/32715 ,  C23C16/4583 ,  C23C16/02 ,  C23C16/26 ,  C23C16/50 ,  C01B32/186 ,  H01J2237/20235 ,  H01J2237/334

Abstract: A substrate processing method of processing a substrate having a base film includes a loading process of loading the substrate into a processing container, a first process of performing a first plasma process in a state where the loaded substrate is held at a first position by raising substrate support pins of a stage arranged in the processing container, and a second process of performing a second plasma process while holding the substrate at a second position by lowering the substrate support pins.

公开(公告)号：US20230042099A1

公开(公告)日：2023-02-09

申请号：US17757906

申请日：2020-11-26

Applicant: Tokyo Electron Limited

Inventor： Makoto WADA ,  Takashi MATSUMOTO ,  Nobutake KABUKI ,  Ryota IFUKU ,  Masahito SUGIURA ,  Hirokazu UEDA

IPC: C23C16/44 ,  H01J37/32 ,  H01L21/768 ,  H01L21/285 ,  C23C16/26 ,  C23C16/511 ,  C01B32/186

Abstract: A film forming method of forming a carbon film includes: cleaning an interior of a processing container by using oxygen-containing plasma in a state in which no substrate is present inside the processing container; subsequently, extracting and removing oxygen inside the processing container by using plasma in the state in which no substrate is present inside the processing container; and subsequently, loading a substrate into the processing container and forming the carbon film on the substrate through plasma CVD using a processing gas including a carbon-containing gas, wherein the cleaning, the extracting and removing the oxygen, and the forming the carbon film are repeatedly performed.

公开(公告)号：US20240254626A1

公开(公告)日：2024-08-01

申请号：US18564641

申请日：2022-05-17

Applicant: Tokyo Electron Limited

Inventor： Hiroki YAMADA ,  Ryota IFUKU ,  Takashi MATSUMOTO ,  Nobutake KABUKI

IPC: C23C16/455 ,  C23C16/26 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32

CPC classification number: C23C16/45538 ,  C23C16/26 ,  C23C16/45534 ,  C23C16/45544 ,  C23C16/511 ,  C23C16/52 ,  H01J37/3222 ,  H01J37/32449 ,  H01J37/32201 ,  H01J2237/332

Abstract: A film forming method of forming a graphene film includes a loading process of loading a substrate into a processing container, a first process of forming the graphene film on the substrate using plasma of a first processing gas that includes a carbon-containing gas, and a second process of forming a doped graphene film on at least one of the substrate and the graphene film using plasma of a second processing gas that includes a dopant gas.

公开(公告)号：US20230361163A1

公开(公告)日：2023-11-09

申请号：US18246391

申请日：2021-09-10

Applicant: Tokyo Electron Limited

Inventor： Koji AKIYAMA ,  Hajime NAKABAYASHI ,  Akinobu KAKIMOTO ,  Nobutake KABUKI ,  Yumiko KAWANO ,  Sara OTSUKI

IPC: H01L21/02 ,  C23C16/455

CPC classification number: H01L28/60 ,  C23C16/45529

Abstract: This film formation method comprises: a first film formation step; a second film formation step; and a third film formation step. In the first film formation step, a dielectric film is formed on a first conductive film. In the second film formation step, a metal oxide film is formed on the dielectric film. In addition, in the second film formation step, a metal oxide film is formed using heated oxygen gas and a vapor of an organic metal compound. In the third film formation step, a second conductive film is formed on the metal oxide film.

公开(公告)号：US20230102051A1

公开(公告)日：2023-03-30

申请号：US17935594

申请日：2022-09-27

Applicant: Tokyo Electron Limited

Inventor： Ryota IFUKU ,  Makoto WADA ,  Nobutake KABUKI ,  Takashi MATSUMOTO ,  Hiroshi TERADA ,  Genji NAKAMURA

IPC: C23C16/26 ,  C23C16/02 ,  C23C16/44 ,  C23C16/513

Abstract: A film forming method includes: a loading process of loading a substrate into a processing container; a first process of forming an interface layer having an amorphous structure or a microcrystalline structure on the substrate by plasma of a first mixed gas including a carbon-containing gas; and a second process of forming a graphene film on the interface layer by plasma of a second mixed gas including the carbon-containing gas.