公开(公告)号：US20160326059A1

公开(公告)日：2016-11-10

申请号：US15142204

申请日：2016-04-29

Applicant: TOKYO ELECTRON LIMITED ,  FUJIMI INCORPORATED

Inventor： Nobuyuki NAGAYAMA ,  Hiroyuki IBE ,  Kazuyuki TSUZUKI

IPC: C04B35/505 ,  C01F17/00 ,  C23C4/12

CPC classification number: C04B35/505 ,  C01F17/0062 ,  C01P2002/72 ,  C01P2004/64 ,  C04B35/5156 ,  C04B35/553 ,  C04B35/62665 ,  C04B2235/80 ,  C04B2235/96 ,  C23C4/04

Abstract: This invention provides a thermal spray material capable of forming a thermal spray coating excellent in plasma erosion resistance as well as in properties such as porosity and hardness. The thermal spray material comprises a rare earth element oxyhalide (RE-O-X) which comprises a rare earth element (RE), oxygen (O) and a halogen atom (X) as its elemental constituents. The thermal spray material has an X-ray diffraction pattern that shows a main peak intensity IA corresponding to the rare earth element oxyhalide, a main peak intensity IB corresponding to a rare earth element oxide and a main peak intensity IC corresponding to a rare earth element halide, satisfying a relationship [(IB+IC)/IA]

Abstract translation: 本发明提供一种热喷涂材料，其能够形成耐等离子体侵蚀性以及孔隙率和硬度等性质优异的热喷涂涂层。 热喷涂材料包括稀土元素（RE-O-X），其包含稀土元素（RE），氧（O）和卤素原子（X）作为其元素组分。 热喷涂材料具有显示对应于稀土元素卤氧化物的主峰强度IA，对应于稀土元素氧化物的主峰强度IB和对应于稀土元素氧化物的主峰强度IC的X射线衍射图 卤化物，满足[（IB + IC）/ IA] <0.02。

公开(公告)号：US20130162142A1

公开(公告)日：2013-06-27

申请号：US13705712

申请日：2012-12-05

Applicant: TOKYO ELECTRON LIMITED ,  TOCALO CO., LTD.

Inventor： Masaru NISHINO ,  Masatsugu MAKABE ,  Nobuyuki NAGAYAMA ,  Tatsuya HANDA ,  Ryotaro MIDORIKAWA ,  Keigo KOBAYASHI ,  Tetsuya NIYA

IPC: H05H1/46

CPC classification number: H05H1/46 ,  H01J37/32477 ,  H01J37/32495

Abstract: A plasma processing apparatus includes a processing chamber; a lower electrode serving as a mounting table for mounting thereon a target object; and an upper electrode or an antenna electrode provided to be opposite to the lower electrode. The apparatus further includes a gas supply source for introducing a gas including a halogen-containing gas and an oxygen gas into the processing chamber and a high frequency power supply for applying a high frequency power for generating plasma to at least one of the upper electrode, the antenna electrode, or the lower electrode. Among inner surfaces of the processing chamber which are exposed to the plasma, at least a part of or all of the surfaces between a mounting position of the target object and the upper electrode, or the antenna electrode; or at least a part of or all of the surfaces of the upper electrode or the antenna electrode are coated with a fluorinated compound.

Abstract translation: 等离子体处理装置包括处理室; 用作安装台的下电极，用于安装目标物体; 以及设置成与下电极相对的上电极或天线电极。 该装置还包括用于将包含含卤素气体和氧气的气体引入处理室的气体供给源和用于将高频电力施加到上部电极中的至少一个的高频电源， 天线电极或下电极。 在暴露于等离子体的处理室的内表面中，目标物体的安装位置与上部电极或天线电极之间的至少一部分或全部表面; 或上部电极或天线电极的至少一部分或全部表面涂覆有氟化合物。

公开(公告)号：US20210207283A1

公开(公告)日：2021-07-08

申请号：US17169593

申请日：2021-02-08

Applicant: Yamaguchi Prefectural Industrial Technology Institute ,  Shimonoseki Mekki Co., Ltd. ,  Tokyo Electron Limited

Inventor： Takehiko MURANAKA ,  Kouji NIIMI ,  Yuuta UENO ,  Hikaru KIKUCHI ,  Hideto SAITO ,  Nobuyuki NAGAYAMA

IPC: C25D11/26 ,  H01L21/67 ,  H01L21/683 ,  H01J37/32

Abstract: An anodized titanium material includes a titanium base material and an anodized titanium layer. The anodized titanium layer is provided on a surface of the titanium base material. The anodized titanium layer includes a porous first anodized titanium layer. The anodized titanium layer has a withstand voltage at 25° C. of 500 V or more, a Vickers hardness of 200 or more, a film thickness of 20 μm or more and less than 80 μm, an arithmetic average roughness Ra of a surface of less than 1.6 μm, and a maximum height roughness Rz of the surface is less than 6.3 μm. In both of a section perpendicular to a thickness direction of the first anodized titanium oxide layer and the surface, no pore sections having a shape capable of including a circle having a diameter of 0.5 μm or more are observed.

公开(公告)号：US20150200080A1

公开(公告)日：2015-07-16

申请号：US14663736

申请日：2015-03-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Eiichiro KIKUCHI ,  Nobuyuki NAGAYAMA ,  Takahiro MIYAI

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01J37/32642 ,  H01J37/32165 ,  H01J37/32724 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831

Abstract: A substrate processing apparatus includes: a holding stage which includes a susceptor having a substrate holding surface on which a wafer is held and a focus ring holding surface on which a focus ring is held; an electrostatic chuck which electrostatically adsorbs a rear surface of the wafer to the substrate holding surface and electrostatically adsorbs a rear surface of the focus ring to the focus ring holding surface; and a heat transfer gas supplying mechanism, wherein the heat transfer gas supplying mechanism independently provides a first heat transfer gas supply unit supplying a first heat transfer gas to the rear surface of the substrate and a second heat transfer gas supply unit supplying a second heat transfer gas to the rear surface of the focus ring.

Abstract translation: 一种基板处理装置，包括：保持台，其包括具有保持晶片的基板保持面的基座和保持有聚焦环的聚焦环保持面; 静电卡盘，其将晶片的后表面静电吸附到基板保持面，并将聚焦环的后表面静电吸附到聚焦环保持面; 以及传热气体供给机构，其中所述传热气体供给机构独立地提供向所述基板的后表面供给第一传热气体的第一传热气体供给单元和向所述第二传热气体供给单元供给第二热传递 气体到聚焦环的后表面。

公开(公告)号：US20240128057A1

公开(公告)日：2024-04-18

申请号：US18398213

申请日：2023-12-28

Applicant: Tokyo Electron Limited

Inventor： Kazuki MOYAMA ,  Nobuyuki NAGAYAMA ,  Mamoru MIURA

IPC: H01J37/32

CPC classification number: H01J37/32477 ,  H01J37/32715 ,  H01J37/32807

Abstract: A consumable member includes a core portion formed of the material having a first purity; and a protection portion provided at a portion worn out by plasma in the plasma processing apparatus around the core portion, and formed of the material having a second purity higher than the first purity. The material may be either quartz or ceramic.

公开(公告)号：US20220020596A1

公开(公告)日：2022-01-20

申请号：US17305471

申请日：2021-07-08

Applicant: Tokyo Electron Limited

Inventor： Toshihiko KIKUCHI ,  Nobuyuki NAGAYAMA

IPC: H01L21/311 ,  H01L21/3065 ,  H01J37/32

Abstract: An etching processing apparatus includes a stage configured to receive a substrate, a chamber configured to contain the stage, and a plasma generator configured to generate plasma in the chamber. An annular quartz member is disposed in a space in which the plasma is generated. The annular quartz member includes a surface facing the space. A coating film covers the surface of the quartz member. The coating film is made of a material other than quartz, and has a thickness of 10 nm or more and less than 800 nm.

公开(公告)号：US20200317582A1

公开(公告)日：2020-10-08

申请号：US16830025

申请日：2020-03-25

Applicant: NIPPON TUNGSTEN CO., LTD. ,  TOKYO ELECTRON LIMITED

Inventor： Takashi IKEDA ,  Hajime ISHII ,  Kenji FUJIMOTO ,  Naoyuki SATOH ,  Nobuyuki NAGAYAMA ,  Koichi MURAKAMI ,  Takahiro MURAKAMI

IPC: C04B35/56 ,  C23F4/00 ,  H01L21/67

Abstract: A member for a plasma processing apparatus has a tungsten carbide phase, and a sub-phase including at least one selected from the group consisting of phase I to IV, and phase V, in which the phase I is a carbide phase containing, as a constituent element, at least one of the elements of Group IV, V, and VI of the periodic table excluding W, the phase II is a nitride phase containing, as a constituent element, at least one of the elements of Group IV, V, and VI of the periodic table excluding W, the phase III is a carbonitride phase containing, as a constituent element, at least one of the elements of Group IV, Group V, and Group VI of the periodic table excluding W, the phase IV is a carbon phase, the phase V is a composite carbide phase which is represented by a formula WxMyCz.

公开(公告)号：US20130255881A1

公开(公告)日：2013-10-03

申请号：US13901673

申请日：2013-05-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kouji MITSUHASHI ,  Hiroyuki NAKAYAMA ,  Nobuyuki NAGAYAMA ,  Tsuyoshi MORIYA ,  Hiroshi NAGAIKE

IPC: H05H1/24

CPC classification number: H05H1/24 ,  C23C16/4404 ,  H01J37/32477 ,  Y10T428/249969 ,  Y10T428/24997 ,  Y10T428/31544 ,  Y10T428/31663 ,  Y10T428/31721

Abstract: An internal member of a plasma processing vessel includes a base material and a film formed by thermal spraying of ceramic on a surface of the base material. The film is formed of ceramic which includes at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd. In addition, at least a portion of the film is sealed by a resin.

Abstract translation: 等离子体处理容器的内部构件包括基材和通过在基材的表面上热喷涂陶瓷而形成的膜。 该膜由包括选自B，Mg，Al，Si，Ca，Cr，Y，Zr，Ta，Ce和Nd中的至少一种元素的陶瓷形成。 此外，膜的至少一部分被树脂密封。

公开(公告)号：US20180240651A1

公开(公告)日：2018-08-23

申请号：US15945456

申请日：2018-04-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Nobuyuki NAGAYAMA ,  Naoyuki SATOH ,  Masahiko OKA ,  Yasuyuki MATSUOKA

IPC: H01J37/32

Abstract: A focus ring to be detachably attached to a top surface of an outer peripheral portion of a mounting table in a processing chamber, includes: an annular main body having a back surface to be attached to the top surface of the outer peripheral portion of the mounting table. And a thermally conductive sheet fixed to the annular main body, the thermally conductive sheet being interposed between the annular main body and the top surface of the outer peripheral portion of the mounting. The thermally conductive sheet is fixed as one unit to the annular main body by coating an unvulcanized rubber on one surface of the thermally conductive sheet, bringing said one surface into contact with the annular main body, and heating the thermally conductive sheet and the annular main body to vulcanize and to adhere the thermally conductive sheet to the annular main body.

公开(公告)号：US20180127318A1

公开(公告)日：2018-05-10

申请号：US15800419

申请日：2017-11-01

Applicant: TOKYO ELECTRON LIMITED ,  FUJIMI INCORPORATED

Inventor： Nobuyuki NAGAYAMA ,  Hiroyuki IBE ,  Takaya MASUDA

IPC: C04B35/505 ,  C04B35/622

CPC classification number: C04B35/505 ,  C04B35/5152 ,  C04B35/553 ,  C04B35/62222 ,  C04B35/62655 ,  C04B35/62695 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/445 ,  C04B2235/5436 ,  C23C4/04

Abstract: Provided is a thermal spray material that can form a compact thermal sprayed coating having an enhanced plasma erosion resistance. The herein disclosed art provides a thermal spray material that contains a rare earth element (RE), oxygen (O), and a halogen element (X) as constituent elements and that contains a mixed crystal of a rare earth element oxyhalide (RE-O—X) and a rare earth element halide (REX3).