公开(公告)号：US20240331979A1

公开(公告)日：2024-10-03

申请号：US18295144

申请日：2023-04-03

Applicant: Tokyo Electron Limited

Inventor： Sergey Voronin ,  Hamed Hajibabaeinajafabadi ,  Qi Wang ,  Andrew Metz

IPC: H01J37/32 ,  H01L21/311

CPC classification number: H01J37/32422 ,  H01J37/3244 ,  H01L21/31116 ,  H01J37/32091 ,  H01J37/321 ,  H01J2237/024 ,  H01J2237/332 ,  H01J2237/3344 ,  H01J2237/3345

Abstract: An apparatus for plasma processing a substrate includes a substrate holder to hold the substrate in a first portion of a vacuum chamber, and a mesh assembly segregating the first portion from a second portion of the vacuum chamber along a vertical direction, where the mesh assembly includes a vertical stack of planar meshes. The apparatus includes a mesh positioning equipment to horizontally move one of the planar meshes to adjust a vertical permeability of the stack, and a plasma generation equipment to generate plasma in the second portion of the vacuum chamber.

公开(公告)号：US20240120181A1

公开(公告)日：2024-04-11

申请号：US17961335

申请日：2022-10-06

Applicant: Tokyo Electron Limited

Inventor： Sergey Voronin ,  Qi Wang

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32715 ,  H01L21/6831 ,  H01J37/321 ,  H01J2237/3346

Abstract: A method of plasma processing includes delivering direct current voltage to a substrate holder including an upper side configured to support a substrate disposed within a plasma processing chamber. The upper side is divided into a plurality of zones by a plurality of conductors electrically isolated from each other. The method further includes pulsing the direct current voltage as first direct current pulses to a first conductor of the plurality of conductors using first pulse parameters, and pulsing the direct current voltage as second direct current pulses to a second conductor of the plurality of conductors using second pulse parameters that are different from the first pulse parameters. The direct current voltage is pulsed to the second conductor while pulsing the direct current voltage to the first conductor.

公开(公告)号：US20240096600A1

公开(公告)日：2024-03-21

申请号：US17945408

申请日：2022-09-15

Applicant: Tokyo Electron Limited

Inventor： Sergey Voronin ,  Qi Wang ,  Hamed Hajibabaeinajafabadi

IPC: H01J37/32

CPC classification number: H01J37/32211 ,  H01J37/32422 ,  H01J2237/334

Abstract: A method of plasma processing includes generating plasma by coupling a source power pulse to a plasma processing chamber containing a substrate holder configured to support a substrate. The plasma includes first ions having a first mass and second ions having a second mass greater than the first mass. The ion density ratio of the second ions to the first ions is a first ratio. The method further includes delivering an energetic ion flux of second ions to the substrate by applying a delayed bias power pulse to the substrate holder after a delay between the source power pulse and the delayed bias power pulse. The delay is chosen based on the diffusion time constants of the first ions and the second ions so that the ion density ratio of the second ions to the first ions is a second ratio that is greater than the first ratio.

公开(公告)号：US20230420267A1

公开(公告)日：2023-12-28

申请号：US17826236

申请日：2022-05-27

Applicant: Tokyo Electron Limited

Inventor： Stephanie Oyola-Reynoso ,  Ivo Otto, IV ,  Qi Wang ,  Aelan Mosden

IPC: H01L21/3213

CPC classification number: H01L21/32138 ,  H01L21/76885 ,  H01L21/32139

Abstract: A method of processing a substrate that includes: forming an etch mask over a ruthenium (Ru) metal layer of a substrate, the etch mask exposing a first portion of the Ru metal layer and covering a second portion of the Ru metal layer; and converting the first portion of the Ru metal layer into a volatile Ru etch product in a processing chamber, the converting including exposing the Ru metal layer of the substrate to a halogen-containing vapor, and to a ligand-exchange agent to form the volatile Ru etch product, where the converting is an oxygen-free process.

公开(公告)号：US11637242B2

公开(公告)日：2023-04-25

申请号：US16999441

申请日：2020-08-21

Applicant: Tokyo Electron Limited ,  SUNY Polytechnic Institute, College of Nanoscience and Engineering

Inventor： Sergey Voronin ,  Qi Wang ,  Shyam Sridhar ,  Karsten Beckmann ,  Martin Rodgers ,  Nathaniel Cady

IPC: H01L45/00 ,  G11C11/15

Abstract: The performance of a ReRAM structure may be stabilized by utilizing a dry chemical gas removal (or cleaning) process to remove sidewall residue and/or etch by-products after etching the ReRAM stack layers. The dry chemical gas removal process decreases undesirable changes in the ReRAM forming voltage that may result from such sidewall residue and/or etch by-products. Specifically, the dry chemical gas removal process may reduce the ReRAM forming voltage that may otherwise result in a ReRAM structure that has the sidewall residue and/or etch by-products. In one embodiment, the dry chemical gas removal process may comprise utilizing a combination of HF and NH3 gases. The dry chemical gas removal process utilizing HF and NH3 gases may be particularly suited for removing halogen containing sidewall residue and/or etch by-products.

公开(公告)号：US20250118532A1

公开(公告)日：2025-04-10

申请号：US18434253

申请日：2024-02-06

Applicant: Tokyo Electron Limited

Inventor： Sergey Voronin ,  Nicholas Smieszek ,  Qi Wang ,  Akiteru Ko ,  Carl Smith

IPC: H01J37/32 ,  H01L21/3065

Abstract: A method for plasma processing includes biasing a substrate by ramping a sheath voltage during a first phase of a plasma process and removing sidewall charge buildup on a feature of the substrate in an absence of substrate biasing during a second phase of the plasma process.

公开(公告)号：US20240266149A1

公开(公告)日：2024-08-08

申请号：US18163934

申请日：2023-02-03

Applicant: Tokyo Electron Limited

Inventor： Qi Wang ,  Hamed Hajibabaeinajafabadi ,  Sergey Voronin ,  Akiteru Ko

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01J37/32477 ,  H01J37/32862 ,  H01L21/3065 ,  H01L21/3081 ,  H01J2237/3341 ,  H01L21/67253

Abstract: A method for performing an etch process includes forming a first protective layer over chamber walls of a semiconductor process chamber and performing a first etch process on an exposed major surface of a first substrate loaded into the semiconductor process chamber. The exposed major surface includes a first metal oxide resist layer. After performing the first etch process on the first substrate, the first protective layer is removed from the chamber walls with a cleaning process.

公开(公告)号：US20220059765A1

公开(公告)日：2022-02-24

申请号：US16999441

申请日：2020-08-21

Applicant: Tokyo Electron Limited ,  SUNY Polytechnic Institute, College of Nanoscience and Engineering

Inventor： Sergey Voronin ,  Qi Wang ,  Shyam Sridhar ,  Karsten Beckmann ,  Martin Rodgers ,  Nathaniel Cady

IPC: H01L45/00

Abstract: The performance of a ReRAM structure may be stabilized by utilizing a dry chemical gas removal (or cleaning) process to remove sidewall residue and/or etch by-products after etching the ReRAM stack layers. The dry chemical gas removal process decreases undesirable changes in the ReRAM forming voltage that may result from such sidewall residue and/or etch by-products. Specifically, the dry chemical gas removal process may reduce the ReRAM forming voltage that may otherwise result in a ReRAM structure that has the sidewall residue and/or etch by-products. In one embodiment, the dry chemical gas removal process may comprise utilizing a combination of HF and NH3 gases. The dry chemical gas removal process utilizing HF and NH3 gases may be particularly suited for removing halogen containing sidewall residue and/or etch by-products.