公开(公告)号：US20240266149A1

公开(公告)日：2024-08-08

申请号：US18163934

申请日：2023-02-03

Applicant: Tokyo Electron Limited

Inventor： Qi Wang ,  Hamed Hajibabaeinajafabadi ,  Sergey Voronin ,  Akiteru Ko

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01J37/32477 ,  H01J37/32862 ,  H01L21/3065 ,  H01L21/3081 ,  H01J2237/3341 ,  H01L21/67253

Abstract: A method for performing an etch process includes forming a first protective layer over chamber walls of a semiconductor process chamber and performing a first etch process on an exposed major surface of a first substrate loaded into the semiconductor process chamber. The exposed major surface includes a first metal oxide resist layer. After performing the first etch process on the first substrate, the first protective layer is removed from the chamber walls with a cleaning process.

公开(公告)号：US20240027900A1

公开(公告)日：2024-01-25

申请号：US17871444

申请日：2022-07-22

Applicant: Tokyo Electron Limited

Inventor： Hamed Hajibabaeinajafabadi ,  Akiteru Ko

IPC: G03F7/004 ,  G03F7/42 ,  G03F7/40 ,  G03F7/32

CPC classification number: G03F7/0043 ,  G03F7/426 ,  G03F7/40 ,  G03F7/325

Abstract: A method of reactive developing a metal oxide resist includes providing a gaseous weak acid to a surface of a patterned metal oxide resist including an exposed portion and an unexposed portion, the gaseous weak acid having an acidity (pKa) greater than −2 and less than about 20, and reactive developing the patterned metal oxide resist using a selective acid-base reaction between the gaseous weak acid and the patterned metal oxide resist to form volatile products. The gaseous weak acid acts as the acid and either the exposed portion or the unexposed portion acts as the base.

公开(公告)号：US20230317465A1

公开(公告)日：2023-10-05

申请号：US17713723

申请日：2022-04-05

Applicant: Tokyo Electron Limited

Inventor： Hamed Hajibabaeinajafabadi ,  Pingshan Luan ,  Aelan Mosden ,  Sergey Voronin

IPC: H01L21/311 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L29/66439 ,  H01L29/66742 ,  H01L21/02532

Abstract: A method of processing a substrate that includes: positioning a substrate in a plasma processing chamber, the substrate including a layer stack of alternating layers of silicon (Si) layers and silicon-germanium (SiGe) layers, the substrate including a recess that exposes sidewalls of the Si layers and sidewalls of the SiGe layers; flowing a first process gas into the plasma processing chamber; while flowing the first process gas, pulsing a second process gas into the plasma processing chamber at a pulsing frequency; while flowing the first process gas and pulsing the second process gas, applying power to a source electrode and a bias electrode of the plasma processing chamber to generate a plasma in the plasma processing chamber; and exposing the substrate to the plasma to laterally etch a portion of the Si layers selectively to the SiGe layers and form indents between the SiGe layers.

公开(公告)号：US12287578B2

公开(公告)日：2025-04-29

申请号：US17888135

申请日：2022-08-15

Applicant: Tokyo Electron Limited

Inventor： Hamed Hajibabaeinajafabadi ,  Akiteru Ko ,  Yu-Hao Tsai ,  Sergey Voronin

IPC: G03F7/36 ,  H01L21/308

Abstract: A method of processing a substrate includes receiving a substrate including a photoresist film including exposed and unexposed portions, etching parts of the unexposed portions of the photoresist film with a developing gas in a process chamber to leave a residual part of the unexposed portions, and purging the developing gas from the process chamber with a purging gas. After purging the developing gas, the residual part of the unexposed portions is etched with the developing gas. The substrate is etched using exposed portions of the photoresist film as a mask.

公开(公告)号：US12002683B2

公开(公告)日：2024-06-04

申请号：US17713723

申请日：2022-04-05

Applicant: Tokyo Electron Limited

Inventor： Hamed Hajibabaeinajafabadi ,  Pingshan Luan ,  Aelan Mosden ,  Sergey Voronin

IPC: H01L21/3213 ,  H01L21/02 ,  H01L21/311 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L21/31116 ,  H01L21/02532 ,  H01L29/66439 ,  H01L29/66742

Abstract: A method of processing a substrate that includes: positioning a substrate in a plasma processing chamber, the substrate including a layer stack of alternating layers of silicon (Si) layers and silicon-germanium (SiGe) layers, the substrate including a recess that exposes sidewalls of the Si layers and sidewalls of the SiGe layers; flowing a first process gas into the plasma processing chamber; while flowing the first process gas, pulsing a second process gas into the plasma processing chamber at a pulsing frequency; while flowing the first process gas and pulsing the second process gas, applying power to a source electrode and a bias electrode of the plasma processing chamber to generate a plasma in the plasma processing chamber; and exposing the substrate to the plasma to laterally etch a portion of the Si layers selectively to the SiGe layers and form indents between the SiGe layers.

公开(公告)号：US20240045337A1

公开(公告)日：2024-02-08

申请号：US17880479

申请日：2022-08-03

Applicant: Tokyo Electron Limited

Inventor： Hamed Hajibabaeinajafabadi ,  Akiteru Ko

IPC: G03F7/38 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/768 ,  H01L21/027 ,  G03F7/004 ,  G03F7/36

CPC classification number: G03F7/38 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/76898 ,  H01L21/0274 ,  G03F7/0043 ,  G03F7/36

Abstract: A method for processing a substrate includes forming a metal oxide resist over the substrate, exposing the metal oxide resist to an extreme ultraviolet light pattern, and flowing a selective gas over the metal oxide resist. The selective gas increases a selectivity of the exposed metal oxide resist to a developing gas. The method further includes flowing the developing gas over the metal oxide resist in a processing chamber and etching the substrate using remaining portions of the metal oxide resist as a mask.

公开(公告)号：US12272558B2

公开(公告)日：2025-04-08

申请号：US17964601

申请日：2022-10-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Matthew Flaugh ,  Jonathan Hollin ,  Subhadeep Kal ,  Pingshan Luan ,  Hamed Hajibabaeinajafabadi ,  Yu-Hao Tsai ,  Aelan Mosden

IPC: H01L21/3065 ,  H01L21/308 ,  H01L21/02 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423

Abstract: Selective protection and etching is provided which can be utilized in etching of a silicon containing layer with respect to a Ge or SiGe layer. In an example, the layers are stacked, and an oxide is on a side surface of the layers. A treatment is utilized to provide a modified surface or termination surface on side surfaces of the Ge/SiGe layers, and a heat treatment is provided after the gas treatment to selectively sublimate layer portions on side surfaces of the Si containing layers. The gas treatment and heat treatment are preferably in non-plasma environments. Thereafter, a plasma process is performed to form a protective layer on the Ge containing layers, and the Si containing layers can be etched with the plasma.

公开(公告)号：US20240331979A1

公开(公告)日：2024-10-03

申请号：US18295144

申请日：2023-04-03

Applicant: Tokyo Electron Limited

Inventor： Sergey Voronin ,  Hamed Hajibabaeinajafabadi ,  Qi Wang ,  Andrew Metz

IPC: H01J37/32 ,  H01L21/311

CPC classification number: H01J37/32422 ,  H01J37/3244 ,  H01L21/31116 ,  H01J37/32091 ,  H01J37/321 ,  H01J2237/024 ,  H01J2237/332 ,  H01J2237/3344 ,  H01J2237/3345

Abstract: An apparatus for plasma processing a substrate includes a substrate holder to hold the substrate in a first portion of a vacuum chamber, and a mesh assembly segregating the first portion from a second portion of the vacuum chamber along a vertical direction, where the mesh assembly includes a vertical stack of planar meshes. The apparatus includes a mesh positioning equipment to horizontally move one of the planar meshes to adjust a vertical permeability of the stack, and a plasma generation equipment to generate plasma in the second portion of the vacuum chamber.

公开(公告)号：US20240096600A1

公开(公告)日：2024-03-21

申请号：US17945408

申请日：2022-09-15

Applicant: Tokyo Electron Limited

Inventor： Sergey Voronin ,  Qi Wang ,  Hamed Hajibabaeinajafabadi

IPC: H01J37/32

CPC classification number: H01J37/32211 ,  H01J37/32422 ,  H01J2237/334

Abstract: A method of plasma processing includes generating plasma by coupling a source power pulse to a plasma processing chamber containing a substrate holder configured to support a substrate. The plasma includes first ions having a first mass and second ions having a second mass greater than the first mass. The ion density ratio of the second ions to the first ions is a first ratio. The method further includes delivering an energetic ion flux of second ions to the substrate by applying a delayed bias power pulse to the substrate holder after a delay between the source power pulse and the delayed bias power pulse. The delay is chosen based on the diffusion time constants of the first ions and the second ions so that the ion density ratio of the second ions to the first ions is a second ratio that is greater than the first ratio.

公开(公告)号：US20240053684A1

公开(公告)日：2024-02-15

申请号：US17888135

申请日：2022-08-15

Applicant: Tokyo Electron Limited

Inventor： Hamed Hajibabaeinajafabadi ,  Akiteru Ko ,  Yu-Hao Tsai ,  Sergey Voronin

IPC: G03F7/36 ,  H01L21/308

CPC classification number: G03F7/36 ,  H01L21/3086

Abstract: A method of processing a substrate includes receiving a substrate including a photoresist film including exposed and unexposed portions, etching parts of the unexposed portions of the photoresist film with a developing gas in a process chamber to leave a residual part of the unexposed portions, and purging the developing gas from the process chamber with a purging gas. After purging the developing gas, the residual part of the unexposed portions is etched with the developing gas. The substrate is etched using exposed portions of the photoresist film as a mask.