公开(公告)号：US10418242B2

公开(公告)日：2019-09-17

申请号：US15512614

申请日：2015-09-15

Applicant: Tokyo Electron Limited

Inventor： Makoto Muramatsu ,  Tadatoshi Tomita ,  Hisashi Genjima ,  Gen You ,  Takahiro Kitano

IPC: H01L21/027 ,  H01L21/033 ,  G03F7/40 ,  H01L21/31 ,  C08J7/18 ,  D06M14/18 ,  G03D5/00 ,  H01L21/02 ,  H01L21/67 ,  H01L29/51 ,  H01L29/66 ,  G03F7/00 ,  H01J37/32 ,  H05H1/46

Abstract: A substrate treatment method of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, includes: a resist pattern formation step of forming a predetermined resist pattern by a resist film on the substrate; a thin film formation step of forming a thin film for suppressing deformation of the resist pattern on a surface of the resist pattern; a block copolymer coating step of applying a block copolymer to the substrate after the formation of the thin film; and a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer.

公开(公告)号：US10207349B2

公开(公告)日：2019-02-19

申请号：US14086146

申请日：2013-11-21

Applicant: Tokyo Electron Limited

Inventor： Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii ,  Takayuki Toshima ,  Hiroaki Inadomi

IPC: B23H7/02 ,  B23H9/00 ,  H01L21/67 ,  H01L21/677 ,  B23H1/00

Abstract: In the present disclosure, the high-pressure chamber includes a chamber main body including a flat rectangular parallelepiped block of a metal which is formed with a flat cavity that serves as a substrate processing space in which a processing using a high-pressure fluid is performed on a substrate, and the substrate processing space being formed by machining the block from one of faces of the block other than the widest face towards another face opposing thereto. In a case where the cavity is constituted as a through hole, the though hole is provided with a cover configured to open or close the cavity on one side of the through hole, and a second block configured to air-tightly seal the cavity on the other side.

公开(公告)号：US20140145390A1

公开(公告)日：2014-05-29

申请号：US14086146

申请日：2013-11-21

Applicant: Tokyo Electron Limited

Inventor： Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii ,  Takayuki Toshima ,  Hiroaki Inadomi

IPC: B23Q3/18 ,  B23H7/08

CPC classification number: B23H7/02 ,  B23H1/00 ,  B23H9/006 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/67772

Abstract: In the present disclosure, the high-pressure chamber includes a chamber main body including a flat rectangular parallelepiped block of a metal which is formed with a flat cavity that serves as a substrate processing space in which a processing using a high-pressure fluid is performed on a substrate, and the substrate processing space being formed by machining the block from one of faces of the block other than the widest face towards another face opposing thereto. In a case where the cavity is constituted as a through hole, the though hole is provided with a cover configured to open or close the cavity on one side of the through hole, and a second block configured to air-tightly seal the cavity on the other side.

Abstract translation: 在本公开内容中，高压室包括室主体，其包括金属扁平的长方体块，其形成有用于进行使用高压流体的处理的基板处理空间的平坦空腔 并且基板处理空间通过从块的除了最宽面之外的一个面朝向与其相对的另一面的一个面加工而形成。 在空洞构成为通孔的情况下，通孔设置有盖，其构造成在通孔的一侧上打开或关闭空腔，并且构造成将空腔气密地密封在通孔上 另一边。

公开(公告)号：US09911621B2

公开(公告)日：2018-03-06

申请号：US15117052

申请日：2015-01-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshikatsu Tobana ,  Gen You ,  Soichiro Okada

IPC: H01L21/311 ,  H01L21/683 ,  H01L21/02

CPC classification number: H01L21/31138 ,  H01L21/02118 ,  H01L21/31144 ,  H01L21/6831

Abstract: This method for processing a target object includes steps ST1 to ST4. The target object has an organic polymer layer and a resist mask on a substrate. In step ST1, the target object is electrostatically attached to an electrostatic chuck in a plasma processing apparatus. In step ST2, the organic polymer layer is etched through the resist mask by means of a plasma of a first gas. In step ST3, the target object is detached from the electrostatic chuck while a plasma of a second gas is generated. In step 4, the resist mask is peeled off. The second gas is either oxygen gas or a mixture of oxygen gas and a rare gas having an atomic weight lower than that of argon gas.

公开(公告)号：US09583330B2

公开(公告)日：2017-02-28

申请号：US14283874

申请日：2014-05-21

Applicant: Tokyo Electron Limited

Inventor： Linan Ji ,  Hidekazu Hayashi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yohei Sato ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

IPC: F26B3/00 ,  H01L21/02 ,  F26B21/10 ,  F26B21/14 ,  F26B23/02 ,  H01L21/67

CPC classification number: H01L21/02 ,  F26B21/10 ,  F26B21/14 ,  F26B23/028 ,  F26B2200/04 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/02101 ,  H01L21/67034

Abstract: A supercritical drying method for a semiconductor substrate is disclosed. The method may include introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method may also include performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.

Abstract translation: 公开了一种用于半导体衬底的超临界干燥方法。 该方法可以包括将半导体衬底以半导体衬底的醇湿润的状态引入半导体衬底，用二氧化碳的超临界流体代替半导体衬底上的醇，通过将半导体衬底浸渍到超临界流体中 并且从室中排出超临界流体和醇，并减小室内的压力。 该方法还可以包括在室内压力降低之后，向室内供给氧气或臭氧气体进行烘烤处理。

公开(公告)号：US12272541B2

公开(公告)日：2025-04-08

申请号：US17664932

申请日：2022-05-25

Applicant: Tokyo Electron Limited

Inventor： Naoki Shindo ,  Gen You ,  Haruna Suzuki

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/67 ,  H01L21/687

Abstract: An etching method includes preparing a substrate in which titanium nitride and molybdenum or tungsten are present, and etching the titanium nitride by supplying a processing gas including a ClF3 gas and a N2 gas to the substrate, wherein in the etching the titanium nitride, a partial pressure ratio of the ClF3 gas to the N2 gas in the processing gas is set to a value at which grain boundaries of the molybdenum or the tungsten are nitrided to such an extent that generation of a pitting is suppressed.

公开(公告)号：US09741583B2

公开(公告)日：2017-08-22

申请号：US15129000

申请日：2015-04-16

Applicant: Tokyo Electron Limited

Inventor： Makoto Muramatsu ,  Takahiro Kitano ,  Tadatoshi Tomita ,  Gen You ,  Takanori Nishi

IPC: H01L21/311 ,  H01L21/308 ,  H01L21/306 ,  H01L21/027 ,  G03F7/09 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/30 ,  G03F7/40 ,  B82Y40/00 ,  B82Y10/00

CPC classification number: H01L21/3086 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/091 ,  G03F7/16 ,  G03F7/168 ,  G03F7/20 ,  G03F7/30 ,  G03F7/38 ,  G03F7/40 ,  H01L21/0271 ,  H01L21/0276 ,  H01L21/30604 ,  Y10S977/887 ,  Y10S977/943

Abstract: A substrate treatment method includes: forming a plurality of circular patterns of a resist film on a substrate; thereafter applying a first block copolymer; then phase-separating the first block copolymer into a hydrophilic polymer and a hydrophobic polymer; thereafter selectively removing the hydrophilic polymer; then selectively removing the resist film from a top of the substrate; thereafter applying a second block copolymer to the substrate; then phase-separating the second block copolymer into a hydrophilic polymer and a hydrophobic polymer; and thereafter selectively removing the hydrophilic polymer from the phase-separated second block copolymer. A ratio of a molecular weight of the hydrophilic polymer in the first block copolymer and the second block copolymer is 20% to 40%.

公开(公告)号：US12283489B2

公开(公告)日：2025-04-22

申请号：US17756979

申请日：2020-10-28

Applicant: Tokyo Electron Limited

Inventor： Satoshi Toda ,  Naoki Shindo ,  Mitsuhiro Tachibana ,  Haruna Suzuki ,  Gen You

IPC: H01L21/3213 ,  C23F1/00 ,  C23F1/02 ,  C23F1/12 ,  C23F1/44 ,  H01L21/306 ,  H01L21/67

Abstract: An etching method includes: providing, within a chamber, a substrate that includes at least a silicon-containing material and a molybdenum film or a tungsten film which is in an exposed state, and selectively etching the molybdenum film or the tungsten film relative to the silicon-containing material by supplying, into the chamber, an oxidation gas and a hexafluoride gas as an etching gas.

公开(公告)号：US11764070B2

公开(公告)日：2023-09-19

申请号：US17305552

申请日：2021-07-09

Applicant: Tokyo Electron Limited

Inventor： Satoshi Toda ,  Naoki Shindo ,  Haruna Suzuki ,  Gen You

IPC: H01L21/321 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/67

CPC classification number: H01L21/32138 ,  H01L21/67069 ,  H01L21/76865 ,  H01L21/76888

Abstract: An etching method includes: providing, in a chamber, a substrate including a structure including a first film selected from a molybdenum film and a tungsten film; performing a first etching on the first film by supplying an oxidation gas and a first gas selected from a MoF6 gas and a WF6 gas into the chamber; when a pore present inside the first film is exposed by the first etching, filling the pore with one of molybdenum and tungsten by stopping the first etching and supplying a reduction gas and a second gas selected the MoF6 gas and the WF6 gas into the chamber; and performing a second etching on a filling layer formed in the filling and the first film by supplying the oxidation gas and a third gas selected from the MoF6 gas and the WF6 gas into the chamber.

公开(公告)号：US10046370B2

公开(公告)日：2018-08-14

申请号：US15491058

申请日：2017-04-19

Applicant: Tokyo Electron Limited

Inventor： Gentaro Goshi ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii ,  Takayuki Toshima

IPC: B08B3/10 ,  H01L21/67

Abstract: The present disclosure provides a substrate processing apparatus including: a processing chamber configured to process a substrate; a fluid supply source configured to supply a substrate processing fluid used in processing for the substrate in a predetermined pressure; a constant pressure supplying path configured to supply the substrate processing fluid from the fluid supply source to the processing chamber in a predetermined pressure without boosting the pressure of the substrate processing liquid; a boosted pressure supplying path configured to boost the pressure of the substrate processing fluid from the fluid supply source into a predetermined pressure by a booster mechanism and supply the pressure boosted substrate processing fluid to the processing chamber; and a control unit configured to switch over the constant pressure supplying path and the boosted pressure supplying path.