公开(公告)号：US20100302784A1

公开(公告)日：2010-12-02

申请号：US12789032

申请日：2010-05-27

申请人： Masatoshi YAJIMA ,  Tomoaki TOJO ,  Yasushi KOBAYASHI

发明人： Masatoshi YAJIMA ,  Tomoaki TOJO ,  Yasushi KOBAYASHI

IPC分类号： F21V5/00

CPC分类号： G11B7/22 ,  G11B7/1374 ,  G11B7/1392 ,  G11B2007/0006

摘要： The present invention provides an optical device including: a light source; an optical element to be irradiated with light emitted from the light source; and a supporting member for supporting the optical element through a cured product of an adhesive. This cured product of the adhesive contains a thermoplastic elastic material. The present invention also provides an optical device including: a light source; an optical element to be irradiated with light emitted from the light source; and a supporting member for supporting the optical element through a cured product of an adhesive. This cured product of the adhesive has a Young's modulus of at least 1.0E+5 Pa but less than 1.0E+7 Pa in an exponential expression, in a temperature range that the cured product of the adhesive reaches due to heat generation during operation.

摘要翻译： 本发明提供一种光学装置，包括：光源; 要从光源发射的光照射的光学元件; 以及用于通过粘合剂的固化产物来支撑光学元件的支撑构件。 该粘合剂的固化产物含有热塑性弹性材料。 本发明还提供了一种光学装置，包括：光源; 要从光源发射的光照射的光学元件; 以及用于通过粘合剂的固化产物来支撑光学元件的支撑构件。 在粘合剂的固化产物在操作期间由于发热引起的粘合剂的固化产物达到的温度范围内，粘合剂的固化产物的指数表达式的杨氏模量为至少1.0E + 5Pa但小于1.0E + 7Pa。

公开(公告)号：US20110044150A1

公开(公告)日：2011-02-24

申请号：US12858103

申请日：2010-08-17

申请人： Tomoaki TOJO ,  Masatoshi YAJIMA ,  Yasushi KOBAYASHI

发明人： Tomoaki TOJO ,  Masatoshi YAJIMA ,  Yasushi KOBAYASHI

IPC分类号： G11B7/00

CPC分类号： G11B7/1374 ,  G02B27/0037 ,  G02B27/141 ,  G11B7/1275 ,  G11B2007/0006

摘要： The present invention provides an optical pickup device including: a light source for emitting light in a first wavelength range including a wavelength of 405 nm; an optical element for transmitting the light emitted from the light source and guiding the emitted light to an optical disc, and for transmitting light reflected from the optical disc and guiding the reflected light to a detector unit; a supporting member for supporting the optical element through an adhesive; a first light blocking member for blocking the light emitted from the light source from entering the adhesive when the optical element guides the emitted light to the optical disc; and a second light blocking member for blocking the light reflected from the optical disc from entering the adhesive when the optical element guides the reflected light to the detector unit. In this optical pickup device, at least one of the first and second light blocking member blocks the light in the first wavelength range and transmits light in a second wavelength range included in an ultraviolet wavelength range of 10 to 400 nm.

摘要翻译： 本发明提供一种光拾取装置，包括：用于发射包括405nm波长的第一波长范围内的光的光源; 光学元件，用于透射从光源发射的光并将发射的光引导到光盘，并用于透射从光盘反射的光并将反射的光引导到检测器单元; 用于通过粘合剂支撑光学元件的支撑构件; 当光学元件将发射的光引导到光盘时，用于阻挡从光源发射的光进入粘合剂的第一遮光构件; 以及第二光阻挡构件，用于当光学元件将反射光引导到检测器单元时，阻挡从光盘反射的光进入粘合剂。 在该光学拾取装置中，第一和第二遮光构件中的至少一个阻挡在第一波长范围内的光并且透射在包括在10至400nm的紫外波长范围内的第二波长范围内的光。

公开(公告)号：US20100187606A1

公开(公告)日：2010-07-29

申请号：US12690766

申请日：2010-01-20

申请人： Yasushi KOBAYASHI ,  Masaki Inoue ,  Kohei Miyagawa

发明人： Yasushi KOBAYASHI ,  Masaki Inoue ,  Kohei Miyagawa

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/8238

CPC分类号： H01L21/823857 ,  H01L21/26586 ,  H01L21/823814 ,  H01L29/42368 ,  H01L29/7816

摘要： A manufacturing method of a semiconductor device including an LDMOS transistor includes: a process (a) of forming a first conductive well diffusion layer in the semiconductor substrate; a process (b) of sequentially forming a gate insulator film, a gate conductive film, and a photoresist film on a region on the semiconductor substrate corresponding to the well diffusion layer; a process (c) of performing photolithography to remove a part of the photoresist film formed in a predetermined region, and etching the gate conductive film using a remaining part of the photoresist film as a mask so as to form an opening in the predetermined region; a process (d) of doping second conductive impurity ions using a remaining part of the gate conductive film and the remaining part of the photoresist film as a mask so as to form the body layer; and a process (e) of removing the remaining part of the gate conductive film except a part corresponding to the gate electrode formed based on a part that constitutes a lateral surface of the gate conductive film facing the opening.

摘要翻译： 包括LDMOS晶体管的半导体器件的制造方法包括：在半导体衬底中形成第一导电阱扩散层的工艺（a）; 在对应于阱扩散层的半导体衬底上的区域上依次形成栅极绝缘膜，栅极导电膜和光刻胶膜的工艺（b） 进行光刻以去除在预定区域中形成的光致抗蚀剂膜的一部分的工艺（c），并且使用剩余部分的光致抗蚀剂膜作为掩模蚀刻栅极导电膜，以便在预定区域中形成开口; 使用栅极导电膜的剩余部分和光刻胶膜的剩余部分作为掩模来掺杂第二导电杂质离子以形成体层的工艺（d）; 以及除了基于构成面对该开口的栅极导电膜的侧面的部分形成的栅极电极以外的部分除去栅极导电膜的剩余部分的工序（e）。

公开(公告)号：US20130083641A1

公开(公告)日：2013-04-04

申请号：US13609484

申请日：2012-09-11

申请人： Yasushi KOBAYASHI ,  Yohichi SAITOH ,  Kazuo MOMOO

发明人： Yasushi KOBAYASHI ,  Yohichi SAITOH ,  Kazuo MOMOO

IPC分类号： G11B7/09 ,  G11B7/127 ,  G11B7/1374 ,  G11B7/1353

CPC分类号： G11B7/00458 ,  G11B7/0901 ,  G11B7/0912 ,  G11B7/0916 ,  G11B7/1353 ,  G11B7/1381

摘要： In one embodiment, the optical pickup device includes: a light source that emits a light beam; a diffractive element that diffracts the light beam and generates a zero-order and ±first-order diffracted light beams; an objective lens that converges the diffracted light beams onto the same track on the storage medium; and a photodetector that receives the diffracted light beams reflected from the storage medium. If a distance from a light beam spot left by the zero-order diffracted light beam on the track to light beam spots left by the ±first-order diffracted light beams on that track is d [μm], the scanning linear velocity of the storage medium is v [m/s], and a time it takes for a phase-change material of the storage medium that has once been melted by the zero-order diffracted light beam to solidify is T [μs], vT≦d is satisfied.

摘要翻译： 在一个实施例中，光学拾取装置包括：发射光束的光源; 衍射元件，衍射光束并产生零级和±一级衍射光束; 将衍射光束会聚在存储介质上的同一轨道上的物镜; 以及光接收器，其接收从存储介质反射的衍射光束。 如果从轨道上的零级衍射光束留下的光束点与该磁道上的±一级衍射光束留下的光束点的距离为d [μm]，则存储器的扫描线速度 介质是v [m / s]，并且一旦被零级衍射光束熔化的存储介质的相变材料固化所花费的时间是T [μs]，vT＆nlE; d满足 。

公开(公告)号：US20110246541A1

公开(公告)日：2011-10-06

申请号：US12894725

申请日：2010-09-30

申请人： Kazuyuki SAKAI ,  Yasushi KOBAYASHI ,  Yuuki TADA ,  Tomoyuki KOBAYASHI

发明人： Kazuyuki SAKAI ,  Yasushi KOBAYASHI ,  Yuuki TADA ,  Tomoyuki KOBAYASHI

IPC分类号： G06F17/30

CPC分类号： H04L43/0817 ,  G06F11/3476 ,  G06F11/3495 ,  H04L41/0213 ,  H04L43/12 ,  H04L67/125

摘要： The present invention, an apparatus includes a data management apparatus comprising, a determination unit configured to determine whether an analyzing apparatus is in a communicable state when a configuration information data indicating a status of a server apparatus is received from a data collection apparatus, the data analyzing apparatus analyzing the configuration information data, an unprocessed information storage unit configured to store the received configuration information data once it is determined that data analyzing apparatus is in an incommunicable state, an integrating unit configured to integrate a plurality of configuration information data stored in the storage unit in accordance with a predetermined condition; and a notifying unit configured to send, to the analyzing apparatus, a message indicating that the data management apparatus is storing the configuration information data integrated by the integrating unit once it is determined that the data analyzing apparatus is in a communicable state.

摘要翻译： 本发明是一种数据管理装置，包括：确定单元，被配置为当从数据收集装置接收到指示服务器装置的状态的配置信息数据时，判断分析装置是否处于通信状态，所述数据 分析装置分析配置信息数据，未处理信息存储单元，被配置为一旦确定数据分析装置处于不可通信状态，就存储接收到的配置信息数据;整合单元，被配置为将存储在所述配置信息数据中的多个配置信息数据 存储单元; 以及通知单元，被配置为一旦确定数据分析装置处于可通信状态，则向分析装置发送指示数据管理装置正在存储由积分单元集成的配置信息数据的消息。

公开(公告)号：US20090061633A1

公开(公告)日：2009-03-05

申请号：US12199297

申请日：2008-08-27

申请人： Yoshihiro NAKATA ,  Tadahiro IMADA ,  Shirou OZAKI ,  Yasushi KOBAYASHI ,  Kohta YOSHIKAWA ,  Ei YANO

发明人： Yoshihiro NAKATA ,  Tadahiro IMADA ,  Shirou OZAKI ,  Yasushi KOBAYASHI ,  Kohta YOSHIKAWA ,  Ei YANO

IPC分类号： H01L21/311

CPC分类号： H01L21/3105 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76883

摘要： According to an aspect of an embodiment, a method of manufacturing a semiconductor device has forming an insulating layer comprising silica-based insulating material, processing the insulating layer, hydrophobizing the insulating layer by applying a silane compound to act on the insulating layer; and irradiating the insulating layer with light or an electron beam.

摘要翻译： 根据实施例的一个方面，制造半导体器件的方法具有：形成包含二氧化硅基绝缘材料的绝缘层，加工绝缘层，通过施加硅烷化合物作用在绝缘层上使绝缘层疏水化; 并用光或电子束照射绝缘层。

公开(公告)号：US20080203574A1

公开(公告)日：2008-08-28

申请号：US12037439

申请日：2008-02-26

申请人： Yasushi KOBAYASHI ,  Yoshihiro NAKATA ,  Shirou OZAKI

发明人： Yasushi KOBAYASHI ,  Yoshihiro NAKATA ,  Shirou OZAKI

IPC分类号： H01L23/52 ,  H01L21/4763 ,  C07F7/08

CPC分类号： H01L21/31695 ,  C09D183/04 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76834 ,  H01L2924/0002 ,  C08L2666/54 ,  H01L2924/00

摘要： To provide an insulating film material that can be advantageously used for forming an insulating film having a low dielectric constant and excellent resistance to damage, such as etching resistance and resistance to liquid reagents, a multilayer interconnection structure in which a parasitic capacitance between the interconnections can be reduced, efficient methods for manufacturing the multilayer interconnection structure, and an efficient method for manufacturing a semiconductor device with a high speed and reliability. The insulating film material contains at least a silicon compound having a steric structure represented by Structural Formula (1) below. where, R1, R2, R3, and R4 may be the same or different and at least one of them represents a functional group containing any of a hydrocarbon and an unsaturated hydrocarbon.

摘要翻译： 为了提供一种绝缘膜材料，其可以有利地用于形成具有低介电常数和优异的耐腐蚀性（如抗蚀刻性和耐液体试剂）的绝缘膜，其中互连之间的寄生电容可以 减少用于制造多层互连结构的有效方法，以及用于制造具有高速度和可靠性的半导体器件的有效方法。 绝缘膜材料至少含有具有由下述结构式（1）表示的空间结构的硅化合物。 其中R 1，R 2，R 3和R 4可以相同或不同，并且在 其中至少一个表示含有任何烃和不饱和烃的官能团。

公开(公告)号：US20110163377A1

公开(公告)日：2011-07-07

申请号：US13050496

申请日：2011-03-17

申请人： Yasushi KOBAYASHI ,  Manabu Imahashi

发明人： Yasushi KOBAYASHI ,  Manabu Imahashi

IPC分类号： H01L29/78

CPC分类号： H01L29/0878 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7816 ,  H01L29/7835

摘要： A semiconductor device includes: an n-type first well diffusion layer; an n-type second well diffusion layer; a p-type source diffusion layer; a p-type third well diffusion layer; a p-type drain diffusion layer; a gate insulating film; a gate electrode; a device isolation insulating film; and a buffer layer. The buffer layer is formed between the first well diffusion layer and the third well diffusion layer to be in contact with an end of the third well diffusion layer opposing the source diffusion layer, and extends from immediately below the gate insulating film to a position deeper than a peak of curvature of impurity concentration distribution of the third well diffusion layer. The buffer layer has an impurity concentration lower than an impurity concentration in the third well diffusion layer.

摘要翻译： 半导体器件包括：n型第一阱扩散层; n型第二阱扩散层; p型源极扩散层; p型第三阱扩散层; p型漏极扩散层; 栅极绝缘膜; 栅电极; 器件隔离绝缘膜; 和缓冲层。 缓冲层形成在第一阱扩散层和第三阱扩散层之间，以与第三阱扩散层的与源极扩散层相对的端部接触，并且从栅绝缘膜的正下方延伸到比第 第三阱扩散层的杂质浓度分布的曲率峰值。 缓冲层的杂质浓度低于第三阱扩散层中的杂质浓度。

公开(公告)号：US20090267144A1

公开(公告)日：2009-10-29

申请号：US12424119

申请日：2009-04-15

申请人： Yasushi KOBAYASHI ,  Manabu Imahashi

发明人： Yasushi KOBAYASHI ,  Manabu Imahashi

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/0878 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7816 ,  H01L29/7835

摘要： A semiconductor device includes: an n-type first well diffusion layer; an n-type second well diffusion layer; a p-type source diffusion layer; a p-type third well diffusion layer; a p-type drain diffusion layer; a gate insulating film; a gate electrode; a device isolation insulating film; and a buffer layer. The buffer layer is formed between the first well diffusion layer and the third well diffusion layer to be in contact with an end of the third well diffusion layer opposing the source diffusion layer, and extends from immediately below the gate insulating film to a position deeper than a peak of curvature of impurity concentration distribution of the third well diffusion layer. The buffer layer has an impurity concentration lower than an impurity concentration in the third well diffusion layer.

摘要翻译： 半导体器件包括：n型第一阱扩散层; n型第二阱扩散层; p型源极扩散层; p型第三阱扩散层; p型漏极扩散层; 栅极绝缘膜; 栅电极; 器件隔离绝缘膜; 和缓冲层。 缓冲层形成在第一阱扩散层和第三阱扩散层之间，以与第三阱扩散层的与源极扩散层相对的端部接触，并且从栅绝缘膜的正下方延伸到比第 第三阱扩散层的杂质浓度分布的曲率峰值。 缓冲层的杂质浓度低于第三阱扩散层中的杂质浓度。