公开(公告)号：US08334091B2

公开(公告)日：2012-12-18

申请号：US12213820

申请日：2008-06-25

申请人： Koji Nozaki ,  Miwa Kozawa ,  Takahisa Namiki ,  Junichi Kon ,  Ei Yano

发明人： Koji Nozaki ,  Miwa Kozawa ,  Takahisa Namiki ,  Junichi Kon ,  Ei Yano

IPC分类号： G03F7/00

CPC分类号： H01L27/11526 ,  G03F7/0048 ,  G03F7/095 ,  G03F7/40 ,  H01L21/31138 ,  H01L27/105 ,  H01L27/11543

摘要： To provide a method for easily forming microscopic patterns exceeding the limit of exposure in the patterning technique utilizing the photolithography method in the vacuum deep ultraviolet ray region, a resist pattern swelling material is comprised by mixing a water-soluble or alkali-soluble composition comprising a resin and a cross linking agent and any one of a non-ionic interfacial active agent and an organic solvent selected from a group of the alcohol based, chain or cyclic ester based, ketone based, chain or cyclic ether based organic solvents.

摘要翻译： 为了提供一种在真空深紫外线区域中利用光刻法在图案化技术中容易地形成超过曝光极限的微观图案的方法，通过混合水溶性或碱溶性组合物，包含 树脂和交联剂以及非离子界面活性剂和选自醇基，链或环酯，酮基，链或环醚基有机溶剂的有机溶剂中的任一种。

公开(公告)号：US07928536B2

公开(公告)日：2011-04-19

申请号：US11727001

申请日：2007-03-23

申请人： Tadahiro Imada ,  Yoshihiro Nakata ,  Ei Yano

发明人： Tadahiro Imada ,  Yoshihiro Nakata ,  Ei Yano

IPC分类号： H01L21/31

CPC分类号： H01L21/02126 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/3105 ,  H01L21/3121 ,  H01L21/316 ,  H01L21/76831

摘要： Techniques for obtaining a wiring layer with a high TDDB resistance and little leakage current, and accordingly, for manufacturing a highly reliable semiconductor device with a small electric power consumption are provided, in which an interfacial roughness reducing film is formed which is in contact with an insulator film and also in contact with a wiring line on the other side surface thereof, and has an interfacial roughness between the wiring line and the interfacial roughness reducing film smaller than that between the insulator film and the interfacial roughness reducing film.

摘要翻译： 提供了具有高TDDB电阻和较小漏电流的布线层获得的技术，并且因此制造具有小功耗的高可靠性半导体器件的技术，其中形成界面粗糙度降低膜，其与 绝缘膜，并且与其另一侧表面上的布线接触，并且布线和界面粗糙度降低膜之间的界面粗糙度小于绝缘膜和界面粗糙度降低膜之间的界面粗糙度。

公开(公告)号：US20090163039A1

公开(公告)日：2009-06-25

申请号：US12314279

申请日：2008-12-08

申请人： Shirou Ozaki ,  Yoshihiro Nakata ,  Ei Yano

发明人： Shirou Ozaki ,  Yoshihiro Nakata ,  Ei Yano

IPC分类号： H01L21/31

CPC分类号： H01L21/31633 ,  C09D183/14 ,  C09D183/16 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/31695

摘要： A method for fabricating a semiconductor device utilizing the step of forming a first insulating film of a porous material over a substrate; the step of forming on the first insulating film a second insulating film containing a silicon compound containing Si—CH3 bonds by 30-90%, and the step of irradiating UV radiation with the second insulating film formed on the first insulating film to cure the first insulating film. Thus, UV radiation having the wavelength which eliminates CH3 groups is sufficiently absorbed by the second insulating film, whereby the first insulating film is highly strengthened with priority by the UV cure, and the first insulating film can have the film density increased without having the dielectric constant increased.

公开(公告)号：US20080050933A1

公开(公告)日：2008-02-28

申请号：US11842412

申请日：2007-08-21

申请人： Shirou OZAKI ,  Yoshihiro NAKATA ,  Ei YANO

发明人： Shirou OZAKI ,  Yoshihiro NAKATA ,  Ei YANO

IPC分类号： H01L21/31

CPC分类号： H01L21/3105 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02348 ,  H01L21/31695 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76825

摘要： In a method for manufacturing a semiconductor device, including forming an insulator film including a material having Si—CH3 bond and Si—OH bond, and irradiating the insulator film with ultraviolet rays, the rate of decrease of C concentration by X-ray photoelectron spectroscopy is not more than 30%, and the rate of decrease of one or more bonds selected from the group consisting of C—H bond, O—H bond and Si—O bond of Si—OH is not less than 10%, as a result of ultraviolet ray irradiation. A low-dielectric-constant insulator film that has a high film strength and can prevent increase of dielectric constant due to moisture absorption, a semiconductor device that can prevent device response speed delay and reliability decrease due to parasite capacity increase, and a manufacturing method therefor are provided.

摘要翻译： 在制造半导体器件的方法中，包括形成包含具有Si-CH 3键和Si-OH键的材料的绝缘膜，并且用紫外线照射绝缘体膜， 通过X射线光电子能谱测定的C浓度不超过30％，选自Si-OH的CH键，OH键和Si-O键的一个或多个键的降低速率不小于10 ％，作为紫外线照射的结果。 一种低介电常数绝缘膜，其具有高的膜强度并且可以防止由于吸湿引起的介电常数的增加，能够防止器件响应速度延迟和可靠性由于寄生容量增加而降低的半导体器件及其制造方法 被提供。

公开(公告)号：US20070226987A1

公开(公告)日：2007-10-04

申请号：US11452948

申请日：2006-06-15

申请人： Hiroshi Endo ,  Yasuhiro Wakabayashi ,  Shin Eguchi ,  Tamotsu Yamamoto ,  Ei Yano

发明人： Hiroshi Endo ,  Yasuhiro Wakabayashi ,  Shin Eguchi ,  Tamotsu Yamamoto ,  Ei Yano

IPC分类号： G11B5/127

CPC分类号： G11B5/3169 ,  G11B5/3163 ,  G11B5/3903 ,  Y10T29/49021 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49048

摘要： The method for fabricating the magnetic head comprises the step of forming over a lower electrode a magnetoresistive effect film 16 with a polishing resistant film 20 formed over the upper surface, the step of forming a magnetic domain control film 24 over the entire surface of the lower electrode 12 including a region where the magnetoresistive effect film 16 has been formed, the step of selectively removing the magnetic domain control film 24 over the magnetoresistive effect film 16 by polishing with the polishing resistant film 20 as the stopper, the step of removing the polishing resistant film 20, and the step of forming an upper electrode 34 over the magnetoresistive effect film 16, from which the polishing resistant film 20 has been removed.

公开(公告)号：US07235866B2

公开(公告)日：2007-06-26

申请号：US11205128

申请日：2005-08-17

申请人： Yoshihiro Nakata ,  Shun-ichi Fukuyama ,  Katsumi Suzuki ,  Ei Yano ,  Tamotsu Owada ,  Iwao Sugiura

发明人： Yoshihiro Nakata ,  Shun-ichi Fukuyama ,  Katsumi Suzuki ,  Ei Yano ,  Tamotsu Owada ,  Iwao Sugiura

IPC分类号： H01L23/58 ,  H01L23/48

CPC分类号： C09D183/04 ,  C09D183/16 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76837 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/31663 ,  C08L83/00 ,  H01L2924/00

摘要： A low dielectric film forming material contains siloxane resin and polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formed which contains siloxane resin and polycarbosilane bonded to the siloxane resin. Material of a low dielectric film is provided which is suitable for inter-level insulating film material. A semiconductor device is also provided which has a low dielectric constant film and high reliability.

摘要翻译： 低介电膜形成材料含有溶解在溶剂中的硅氧烷树脂和聚碳硅烷。 通过使用该溶液，形成含有与硅氧烷树脂结合的硅氧烷树脂和聚碳硅烷的低电介质膜。 提供了适用于层间绝缘膜材料的低介电膜材料。 还提供了具有低介电常数膜和高可靠性的半导体器件。

公开(公告)号：US07202679B2

公开(公告)日：2007-04-10

申请号：US11327497

申请日：2006-01-09

申请人： Shigeyuki Maruyama ,  Susumu Kida ,  Naoyuki Watanabe ,  Takafumi Hashitani ,  Ei Yano ,  Ichiro Midorikawa

发明人： Shigeyuki Maruyama ,  Susumu Kida ,  Naoyuki Watanabe ,  Takafumi Hashitani ,  Ei Yano ,  Ichiro Midorikawa

IPC分类号： G01R31/02

CPC分类号： G01R1/06733 ,  G01R1/0483 ,  G01R1/06711 ,  G01R1/06755 ,  G01R1/07314 ,  H01L23/49827 ,  H01L2924/0002 ,  H01L2924/00

摘要： A contactor is provided which contactor comprises an insulating substrate, a concave portion formed in the insulating substrate and extending in a perpendicular direction from a surface thereof, and elastic conductive particles disposed in the concave portion. A part of one of the conductive particles protrudes from the surface of the insulating substrate.

摘要翻译： 提供一种接触器，该接触器包括绝缘基板，形成在绝缘基板中并从其表面沿垂直方向延伸的凹部，以及设置在凹部中的弹性导电颗粒。 一部分导电粒子从绝缘基片的表面突出。

公开(公告)号：US07189783B2

公开(公告)日：2007-03-13

申请号：US10305258

申请日：2002-11-27

申请人： Miwa Kozawa ,  Koji Nozaki ,  Takahisa Namiki ,  Junichi Kon ,  Ei Yano

发明人： Miwa Kozawa ,  Koji Nozaki ,  Takahisa Namiki ,  Junichi Kon ,  Ei Yano

IPC分类号： C03C15/00 ,  C03C25/68 ,  C03F1/00

CPC分类号： H01L27/11526 ,  G03F7/0035 ,  G03F7/40 ,  G11B5/17 ,  G11B5/312 ,  G11B5/3163 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/32139 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11543

摘要： A resist pattern thickening material has resin, a crosslinking agent and a compound having a cyclic structure, or resin having a cyclic structure at a part. A resist pattern has a surface layer on a resist pattern to be thickened with etching rate (nm/s) ratio of the resist pattern to be thickened the surface layer of 1.1 or more, under the same condition, or a surface layer to a resist pattern to be thickened. A process for forming a resist pattern includes applying the thickening material after forming a resist pattern to be thickened on its surface. A semiconductor device has a pattern formed by the resist pattern. A process for manufacturing the semiconductor device has applying, after forming a resist pattern to be thickened, the thickening material to the surface of the resist pattern to be thickened, and patterning the underlying layer by etching, the pattern as a mask.

摘要翻译： 抗蚀剂图案增厚材料具有树脂，交联剂和具有环状结构的化合物，或者部分具有环状结构的树脂。 抗蚀剂图案具有在抗蚀剂图案上的表面层，在相同条件下，将表面层的抗蚀剂图案的蚀刻速率（nm / s）比为1.1以上，或将表面层与抗蚀剂 图案加厚。 形成抗蚀剂图案的方法包括在形成要在其表面上加厚的抗蚀剂图案之后施加增稠材料。 半导体器件具有由抗蚀剂图案形成的图案。 制造半导体器件的方法在形成要加厚的抗蚀剂图案之后，将增厚材料施加到抗蚀剂图案的表面以使其变厚，并通过蚀刻将该图案图案化为掩模。

公开(公告)号：US07170177B2

公开(公告)日：2007-01-30

申请号：US11115407

申请日：2005-04-27

申请人： Yoshihiro Nakata ,  Katsumi Suzuki ,  Iwao Sugiura ,  Ei Yano

发明人： Yoshihiro Nakata ,  Katsumi Suzuki ,  Iwao Sugiura ,  Ei Yano

IPC分类号： H01L23/48

CPC分类号： H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2221/1036 ,  H01L2924/0002 ,  H01L2924/00

摘要： A disclosed semiconductor apparatus includes a substrate, a first insulating layer formed on the substrate, the first insulating layer including a Cu wiring part, and a second insulating layer formed on the substrate, the second insulating layer including a Cu via plug part electrically connected to the Cu wiring part. The first insulating layer is a porous insulating film having an elastic modulus of 5 GPa or more and a hardness of 0.6 GPa or more, and the second insulating layer has an elastic modulus of no less than 10 GPa and a hardness no less than 1 GPa.

摘要翻译： 所公开的半导体装置包括基板，形成在基板上的第一绝缘层，包括Cu布线部分的第一绝缘层和形成在基板上的第二绝缘层，第二绝缘层包括Cu经由插塞部分，电连接到 Cu接线部分。 第一绝缘层是具有5GPa以上的弹性模量和0.6GPa以上的硬度的多孔绝缘膜，第二绝缘层的弹性模量不小于10GPa，硬度不小于1GPa 。

公开(公告)号：US20060022357A1

公开(公告)日：2006-02-02

申请号：US11205128

申请日：2005-08-17

申请人： Yoshihiro Nakata ,  Shun-ichi Fukuyama ,  Katsumi Suzuki ,  Ei Yano ,  Tamotsu Owada ,  Iwao Sugiura

发明人： Yoshihiro Nakata ,  Shun-ichi Fukuyama ,  Katsumi Suzuki ,  Ei Yano ,  Tamotsu Owada ,  Iwao Sugiura

IPC分类号： H01L23/29 ,  H01L21/31

CPC分类号： C09D183/04 ,  C09D183/16 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76837 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/31663 ,  C08L83/00 ,  H01L2924/00

摘要： A low dielectric film forming material contains siloxane resin and polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formed which contains siloxane resin and polycarbosilane bonded to the siloxane resin. Material of a low dielectric film is provided which is suitable for inter-level insulating film material. A semiconductor device is also provided which has a low dielectric constant film and high reliability.