公开(公告)号：US07058608B1

公开(公告)日：2006-06-06

申请号：US09787549

申请日：2000-07-19

申请人： Tomohiro Nagata ,  Takashi Nagi ,  Masao Iwamoto ,  Hitoshi Sakamoto

发明人： Tomohiro Nagata ,  Takashi Nagi ,  Masao Iwamoto ,  Hitoshi Sakamoto

IPC分类号： G06F17/00

CPC分类号： G06Q30/02 ,  G06F21/10 ,  G06F2221/0737

摘要： A copyright information management system supporting the management and protection of products comprised of digitalized multimedia content in a product distribution environment. The copyright information management system (10) provides a copyright information management center (11), provided in a product distribution environment (15) where products are distributed through communications lines (14) between a product provider (12) including at least one of a copyright owner and distributor and a product user (13) receiving the product, for exchanging information relating to the products through the communications lines (14). The copyright information management center (11) centrally manages all copyright information through the communications lines (14) by preregistering copyright information relating to the individual products in the center (11).

摘要翻译： 一种版权信息管理系统，支持产品分发环境中数字化多媒体内容产品的管理和保护。 版权信息管理系统（10）提供了在产品分发环境（15）中提供的版权信息管理中心（11），其中产品通过通信线路（14）分发在产品提供商（12）之间，该产品提供商（12） 版权所有者和经销商以及接收产品的产品用户（13），用于通过通信线路（14）交换与产品相关的信息。 版权信息管理中心（11）通过预先注册与中心的单个产品相关的版权信息（11），通过通信线路（14）集中管理所有版权信息。

公开(公告)号：US09163014B2

公开(公告)日：2015-10-20

申请号：US13383472

申请日：2010-06-09

申请人： Junichi Edahiro ,  Hitoshi Sakamoto ,  Kazuto Ikemoto ,  Hajime Shimizu ,  Tatsuya Hasegawa

发明人： Junichi Edahiro ,  Hitoshi Sakamoto ,  Kazuto Ikemoto ,  Hajime Shimizu ,  Tatsuya Hasegawa

IPC分类号： C07D471/04 ,  A23L1/30

CPC分类号： C07D471/04 ,  A23L33/10 ,  A23L33/15 ,  A23V2002/00 ,  C07B2200/13

摘要： A crystal of pyrroloquinoline quinone disodium salt having peaks at 2θ of 9.1°, 10.3°, 13.8°, 17.7°, 18.3°, 24.0°, 27.4°, 31.2° and 39.5° (±0.2° for each) in powder X-ray diffractometry using Cu Kα radiation, or a crystal of pyrroloquinoline quinone trisodium salt having peaks at 2θ of 6.6°, 11.4°, 13.0°, 22.6°, 26.9°, 27.9°, 37.0°, 38.9° and 43.4° (±0.2° for each) in powder X-ray diffractometry using Cu Kα radiation.

摘要翻译： 吡咯并喹啉醌二钠的晶体，其峰值在2℃。 在使用CuKα辐射的粉末X射线衍射中，为9.1°，10.3°，13.8°，17.7°，18.3°，24.0°，27.4°，31.2°和39.5°（±0.2°），或吡咯并喹啉 喹啉三钠盐在2℃具有峰值; 在使用CuKα辐射的粉末X射线衍射中，为6.6°，11.4°，13.0°，22.6°，26.9°，27.9°，37.0°，38.9°和43.4°（±0.2°）。

公开(公告)号：US20140190738A1

公开(公告)日：2014-07-10

申请号：US14240348

申请日：2012-08-15

申请人： Hitoshi Sakamoto ,  Minoru Yoshikawa ,  Masaki Chiba ,  Kenichi Inaba ,  Arihiro Matsunaga

发明人： Hitoshi Sakamoto ,  Minoru Yoshikawa ,  Masaki Chiba ,  Kenichi Inaba ,  Arihiro Matsunaga

IPC分类号： H05K1/02

CPC分类号： H05K1/021 ,  F28D15/0266 ,  G06F1/20 ,  H05K7/2029

摘要： An electronic substrate 100D has a tabular base material 110 which can install a heater element 120 and the cooling structure that cools the heater element 120. An electronic substrate 100 can be plugged in/out in the case 200 in the direction which is almost parallel to the face of the base material 110. The cooling structure is installed on the tabular base material 110, and has the first heat radiation part 160D with a hollow shape and the heat transfer part 700. The first heat radiation part 160D with a hollow shape radiates the generated heat of the heater element 120 installed in the base material. The heat transfer part 700 transfers the generated heat of the heater element 120 to the first heat radiation part 160D. The first heat radiation part 160D has the first joint surface 165 formed along a face which is almost vertical to the insert and removal direction W of the base material 110. The first heat radiation part 160D is connected to the second radiation part 260B set up in the case 200 thermally through the first joint surface 165. As a result, the generated heat of the heater element can be radiated sufficiently.

摘要翻译： 电子基板100D具有片状基材110，其可以安装加热元件120和冷却加热器元件120的冷却结构。电子基板100可以在壳体200中沿几乎平行于 基体材料110的表面。冷却结构安装在片状基材110上，并具有中空形状的第一散热部160D和传热部700.具有中空形状的第一散热部160D辐射 安装在基材中的加热器元件120产生的热量。 传热部700将发热元件120的发热传递到第一散热部160D。 第一散热部分160D具有沿着基本材料110的插入和移除方向W几乎垂直的面形成的第一接合表面165.第一散热部分160D连接到设置在第一辐射部分260B中的第二辐射部分260B 壳体200热穿过第一接合表面165.结果，可以充分地辐射加热器元件的产生的热量。

公开(公告)号：US20140027100A1

公开(公告)日：2014-01-30

申请号：US14110671

申请日：2012-04-10

申请人： Minoru Yoshikawa ,  Hitoshi Sakamoto ,  Masaki Chiba ,  Kenichi Inaba ,  Arihiro Matsunaga

发明人： Minoru Yoshikawa ,  Hitoshi Sakamoto ,  Masaki Chiba ,  Kenichi Inaba ,  Arihiro Matsunaga

IPC分类号： F28F1/00

CPC分类号： F28F1/00 ,  F28D15/0266 ,  F28F1/003 ,  F28F13/187 ,  F28F19/04 ,  F28F21/084 ,  F28F2255/02

摘要： In a piping structure of a cooling device using an ebullient cooling system, the cooling performance of the cooling device is degraded if the pipe is provided with flexibility, therefore, a piping structure of a cooling device according to an exemplary aspect of the invention includes a first tubular part with a hollow portion through which a refrigerant used in the cooling device flows; wherein the first tubular part is made of metal materials; and the surface roughness of the inner surface of the first tubular part is less than or equal to the size of a condensation nucleus for the refrigerant.

摘要翻译： 在使用沸腾冷却系统的冷却装置的配管结构中，如果管道具有柔性，则冷却装置的冷却性能下降，因此根据本发明的示例性方面的冷却装置的管道结构包括 第一管状部分，其具有中空部分，冷却装置中使用的制冷剂通过该中空部分流动; 其中所述第一管状部分由金属材料制成; 并且第一管状部的内表面的表面粗糙度小于或等于制冷剂的凝结核的尺寸。

公开(公告)号：US07923374B2

公开(公告)日：2011-04-12

申请号：US12471743

申请日：2009-05-26

申请人： Hitoshi Sakamoto ,  Naoki Yahata ,  Toshihiko Nishimori ,  Yoshiyuki Ooba ,  Hiroshi Tonegawa ,  Ikumasa Koshiro ,  Yuzuru Ogura

发明人： Hitoshi Sakamoto ,  Naoki Yahata ,  Toshihiko Nishimori ,  Yoshiyuki Ooba ,  Hiroshi Tonegawa ,  Ikumasa Koshiro ,  Yuzuru Ogura

IPC分类号： H01L21/302

CPC分类号： H01J37/321 ,  C23C16/08 ,  C23C16/14 ,  C23C16/4488 ,  H01J37/32357 ,  H01J2237/3326 ,  H01L21/28556 ,  H01L21/76879

摘要： In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

摘要翻译： 在金属膜制造装置中，在室内用Cl 2气体等离子体蚀刻铜板构件，形成包含Cu成分和Cl 2气体的前体; 并且将铜板构件和基板的温度和它们的温度之间的差异预先控制，以将前体的Cu组分沉积在基板上，从而形成Cu膜。 在该装置中，Cl *形成在与腔室内部连通的通道的激励室中以流过Cl 2气体，并且将Cl *供应到室中以从吸附到基板上的前体中抽出Cl 2气体， 从而促进Cu成膜反应。 该设备具有高的成膜速度，可以使用廉价的起始材料，并且可以最小化残留在膜中的杂质。

公开(公告)号：US07776751B2

公开(公告)日：2010-08-17

申请号：US11919484

申请日：2006-05-17

申请人： Yoshiyuki Ooba ,  Hitoshi Sakamoto

发明人： Yoshiyuki Ooba ,  Hitoshi Sakamoto

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： C23C16/4488 ,  C01B33/06 ,  C23C16/325 ,  C23C16/42 ,  H01L21/2807 ,  H01L21/28097 ,  H01L21/28518 ,  H01L31/032

摘要： A process for producing a silicon compound can minimize the number of steps and can form a desired compound in a low-temperature environment. The process comprises: allowing a radical of a halogen gas to act on a member 11 to be etched, which is disposed within a chamber 1 and is formed of a material containing an element capable of forming a compound with Si, while keeping the member 11 at a relatively high temperature, to form a gas of a precursor 24, which is a compound of the material and the halogen; holding a substrate 3 accommodated within the chamber 1 at a relatively low temperature, with the Si interface of the substrate 3 being exposed, to adsorb the precursor 24 onto the Si interface of the substrate 3; and then allowing the radical of the halogen gas to act on the precursor 24 adsorbed onto the Si interface to reduce the precursor 24, thereby producing a compound of the material and Si.

摘要翻译： 硅化合物的制造方法可以使步骤的数量最少化，并能在低温环境下形成所需化合物。 该方法包括：使卤素气体基团作用在要蚀刻的构件11上，该构件设置在室1内，并且由含有能够与Si形成化合物的元素的材料形成，同时保持构件11 在相对高的温度下形成作为该材料和卤素的化合物的前体24的气体; 在相对较低的温度下保持容纳在室1内的基板3，使基板3的Si界面露出，以将前体24吸附到基板3的Si界面上; 然后使卤素气体的基团作用于吸附在Si界面上的前体24上以还原前体24，从而产生该材料和Si的化合物。

公开(公告)号：US20100062181A1

公开(公告)日：2010-03-11

申请号：US12618130

申请日：2009-11-13

申请人： Hitoshi Sakamoto ,  Naoki Yahata ,  Yoshiyuki Ooba

发明人： Hitoshi Sakamoto ,  Naoki Yahata ,  Yoshiyuki Ooba

IPC分类号： C23C16/448 ,  C23C16/06

CPC分类号： C23C16/52 ,  C23C16/14 ,  C23C16/4488

摘要： A metal film production method supplies a source gas containing a halogen, such as a chlorine, to the interior of a chamber such that the source gas is intermittently supplied, to form a Cu component of a precursor into a film on a substrate, while suppressing a relative increase in etching particles. Thus, the source gas is supplied in the full presence of plasma particles contributing to film formation. Moreover, the source gas is supplied in a state in which a Cu film formed is not etched with the etching particles. Consequently, the Cu film is reliably increased with respect to the film formation time to increase the film formation speed. The temperature of the substrate is less than that of the etched member.Alternatively, a source gas is supplied to the interior of a chamber between a substrate and a copper plate member such that the source gas is gradually increased continuously from a flow rate of 0 to a predetermined flow rate to increase the particle size of the metal component, as copper gradually.

摘要翻译： 金属膜制造方法将含有卤素如氯的源气体向室内供给，从而间歇地供给源气体，在基板上形成膜前体的Cu成分，同时抑制 蚀刻颗粒的相对增加。 因此，源气体在有助于成膜的等离子体颗粒的完全存在下被供给。 此外，源蚀刻气体以不用蚀刻颗粒蚀刻形成的Cu膜的状态供给。 因此，相对于成膜时间，Cu膜可靠地增加，以提高成膜速度。 基板的温度小于蚀刻部件的温度。 或者，将源气体供给到基板和铜板构件之间的室内部，使得源气体从0的流量连续地逐渐增加到预定流量，以增加金属部件的粒径 ，随着铜逐渐。

公开(公告)号：US20090136933A1

公开(公告)日：2009-05-28

申请号：US12085186

申请日：2006-11-16

申请人： Hitoshi Sakamoto

发明人： Hitoshi Sakamoto

IPC分类号： C12Q1/68

CPC分类号： C12Q1/6825 ,  C12Q2545/114 ,  C12Q2527/125

摘要： A method and kit for electrochemically simply determining with excellent precision the amount of double-stranded DNA does not require an expensive measurement electrode, such as an immobilized enzyme electrode or any high level electrode production technique which can retain uniform surface area accuracy. A method and kit are provided for electrochemically determining the amount of double-stranded DNA in a sample solution based on a residual amount of a substance capable of binding to the double-stranded DNA which is added to the solution in excess amount, in which a buffering substance is added to a sample solution, the buffering substance being capable of allowing an oxidation wave potential of the potential-current curve for the substance capable of binding to the double-stranded-DNA determined in a solution containing the buffering substance to change depending on the concentration of the free substance capable of binding to the double-stranded DNA in the solution.

摘要翻译： 用于电化学简单地精确测定双链DNA量的方法和试剂盒不需要昂贵的测量电极，例如固定化酶电极或可以保持均匀表面积精度的任何高级电极生产技术。 提供了一种用于电化学测定样品溶液中的双链DNA量的方法和试剂盒，其基于能够结合到过量添加到溶液中的双链DNA的残留量，其中a 将缓冲物质添加到样品溶液中，所述缓冲物质能够允许能够结合含有缓冲物质的溶液中测定的双链DNA的物质的电位 - 电流曲线的氧化波电位变化 关于能够结合溶液中的双链DNA的游离物质的浓度。

公开(公告)号：US20090081869A1

公开(公告)日：2009-03-26

申请号：US11919484

申请日：2006-05-17

申请人： Yoshiyuki Ooba ,  Hitoshi Sakamoto

发明人： Yoshiyuki Ooba ,  Hitoshi Sakamoto

IPC分类号： H01L21/28

CPC分类号： C23C16/4488 ,  C01B33/06 ,  C23C16/325 ,  C23C16/42 ,  H01L21/2807 ,  H01L21/28097 ,  H01L21/28518 ,  H01L31/032

摘要： A process for producing a silicon compound can minimize the number of steps and can form a desired compound in a low-temperature environment. The process comprises: allowing a radical of a halogen gas to act on a member 11 to be etched, which is disposed within a chamber 1 and is formed of a material containing an element capable of forming a compound with Si, while keeping the member 11 at a relatively high temperature, to form a gas of a precursor 24, which is a compound of the material and the halogen; holding a substrate 3 accommodated within the chamber 1 at a relatively low temperature, with the Si interface of the substrate 3 being exposed, to adsorb the precursor 24 onto the Si interface of the substrate 3; and then allowing the radical of the halogen gas to act on the precursor 24 adsorbed onto the Si interface to reduce the precursor 24, thereby producing a compound of the material and Si.

摘要翻译： 硅化合物的制造方法可以使步骤的数量最少化，并能在低温环境下形成所需化合物。 该方法包括：使卤素气体基团作用在要蚀刻的构件11上，该构件设置在室1内，并且由含有能够与Si形成化合物的元素的材料形成，同时保持构件11 在相对高的温度下形成作为该材料和卤素的化合物的前体24的气体; 在相对较低的温度下保持容纳在室1内的基板3，使基板3的Si界面露出，以将前体24吸附到基板3的Si界面上; 然后使卤素气体的基团作用于吸附在Si界面上的前体24上以还原前体24，从而产生该材料和Si的化合物。

公开(公告)号：US20090071402A1

公开(公告)日：2009-03-19

申请号：US12292192

申请日：2008-11-13

申请人： Hitoshi Sakamoto ,  Naoki Yahata

发明人： Hitoshi Sakamoto ,  Naoki Yahata

IPC分类号： C23C16/54

CPC分类号： C23C16/4488 ,  C23C16/14 ,  C23C16/448

摘要： A copper film vapor phase deposition method includes the steps of exposing high-purity copper to a plasma of a gas containing chlorine gas to etch the high-purity copper, thereby generating active CuxCly, wherein x is 1 to 3, y is 1 to 3, gas, and forming a copper film by transporting the CuxCly gas onto the surface of a substrate to be processed. By using inexpensive high-purity copper and inexpensive chlorine, hydrogen chloride, or chlorine and hydrogen as source gases, a copper film containing no residual impurity such as carbon and having high film quality can be formed with high reproducibility.

摘要翻译： 铜膜气相沉积方法包括以下步骤：将高纯度铜暴露于含氯气体的等离子体中以蚀刻高纯度铜，从而产生活性CuxCly，其中x为1至3，y为1至3 ，气体，并通过将CuxCly气体输送到待处理基板的表面上而形成铜膜。 通过使用廉价的高纯度铜和廉价的氯，氯化氢或氯和氢作为源气体，可以以高再现性形成不含碳等残留杂质且具有高膜质量的铜膜。