摘要:
A non-impact printer comprising: a light source; a light modulator; a light modulation controller including a print timing control pulse generator; a light beam reflector made of a polygonal mirror; and a photoconductor drum upon which a modulated light beam scans an area used for scanning, wherein the print timing control pulse generator further includes a compensating means basically comprised of a means for measuring the respective scanning times required for scanning the respective lines to be scanned on the area used for scanning and a means for adjusting the periods of the print timing control pulses in accordance with each scanning time, thereby the same number of print timing control pulses can always be produced for every line to be scanned on the area used for scanning.
摘要:
A timing pulse generator for producing timing pulses the period of which is variable. In the timing pulse generator, a plurality of reference pulse trains are produced which have the same frequency as each other, but different phases from each other. Then, each of the pulses comprising the final timing pulses to be produced is created by suitably selecting one of the pulses from among the reference pulse trains, sequentially.
摘要:
According to one embodiment, an information processing apparatus includes a memory unit which stores attribute information which indicates a characteristic quantity of each of components constituting a product, and parent-child relationship information which indicates a parent-child relationship between the components, a unit which calculates positions on a tree diagram of nodes corresponding to the components, a unit which calculates, for each of the components, a sum of the characteristic quantity of the component and the characteristic quantities of all child components belonging to the component, a unit which determines, for each of the nodes, a mode of a branch line which is to connect the node to a parent node thereof, based on the sum calculated for each of the components, and a unit which creates the tree diagram based on the calculated positions of the nodes and the determined mode of the branch line corresponding to each node.
摘要:
According to one embodiment, an image display control system includes a transmitting-side information processing device comprising shared data and a receiving-side information processing device viewing the shared data via a network. The transmitting-side information processing device further comprises transmission means for, upon receiving an access from the receiving-side information processing device, transmitting list information of the shared data and local time information in a location where the transmitting-side information processing device is provided, to the receiving-side information processing device making the access. The receiving-side information processing device includes storage means for storing time-corresponding data, and display means for associating the time-corresponding data which are read with the received list information of the shared data, and displaying the shared data together with the time-corresponding data.
摘要:
A semiconductor device for accomplishing high speed switchings with a large current includes a radiation plate, a first conductor fixed on said radiation plate, a first insulating layer fixed on said first conductor, a second conductor fixed on said first insulating layer, at least one semiconductor element and a second insulating layer fixed on said second conductor, a third conductor fixed on said second insulating layer, a fourth conductor for electrically connecting the surface electrode of said semiconductor element with said third conductor, a first power terminal fixed on said second conductor, and a second power terminal fixed on said third conductor. To reduce the internal inductance, said first and second power terminals have a flat part whose width is larger in length than the height. Also, these terminals are adjacently arranged substantially parallel to each other. In this device, the main currents on said first and second power terminals, and on said second and fourth conductors flow in the opposite directions, thus further reducing the internal inductance.
摘要:
An ink jet printing head which includes a head body provided with an ink filling port (18), a plurality of rows of nozzles (32A.sub.1 through 32A.sub.5, 40B.sub.1 through 40B.sub.5) arrayed in a staggered formation, pressure chambers (21A.sub.1, 21A.sub.2, . . . , 21B.sub.1, 21B.sub.2, . . . ), one for each of the nozzles, and ink passages (28A.sub.1, . . . , 33A.sub.1, . . . , 38B.sub.1, . . . , 41B.sub.1, . . . ) connecting the ink filling port with the nozzles via corresponding pressure chambers. (19A.sub.1 through 19A.sub.5, 19B.sub.1 though 19B.sub.5). The pressure chambers are formed inside the head body and adjacent to the surface of at least one side of the head body. Piezoelectric elements are mounted on the outside of the head body at positions corresponding to the pressure chambers.
摘要:
According to one embodiment, an electronic device includes: a casing; and an operating module exposed on an external surface of the casing at a nearer side than a keyboard in a depth direction of the casing, the operating module including a pointer operating module receiving an operation to move a pointer on a screen, a first click operating module receiving a click operation associated with a position of the pointer, and a second click operating module receiving a click operation associated with the position of the pointer, wherein among the pointer operating module, and the first and second click operating modules, the pointer operating module is t a nearest side in the depth direction, the first click operating module is at a farther side than the pointer operating module, and the second click operating module is at a farther side than the first click operating module in the depth direction.
摘要:
An insulated gate bipolar transistor includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type formed on a top surface of the first semiconductor layer, a base layer of the first conductivity type formed on a top surface of the second semiconductor layer, a plurality of gate electrodes each of which is buried in a trench with a gate insulation film interposed therebetween, the trench being formed in the base layer to a depth reaching said second semiconductor layer from a surface of the base layer, each the gate electrode having an upper surface of a rectangular pattern with different widths in two orthogonal directions, the gate electrodes being disposed in a direction along a short side of the rectangular pattern, and emitter layers of the second conductivity type formed in the surface of the base layer to oppose both end portions of each the gate electrode in a direction along a long side of the rectangular pattern.
摘要:
A conductivity modulation type field effect transistor comprises an n.sup.- type low concentration impurity layer of high resistance formed on an n.sup.+ type silicon substrate, a first channel region of a given width formed on the low concentration impurity layer, a pair of p type gates oppositely formed with the first channel region therebetween, an n.sup.- type low concentration impurity layer formed on the first channel region including the p.sup.+ gate, a p channel layer including two channel regions formed on the n.sup.- type low concentration impurity layer, and a pair of n.sup.+ type sources formed on the second channel region with their center aligned with a center of the first gate means, in which, after the formation of the n.sup.+ type source, a groove is formed at each side of a respective semiconductor device, first gate electrodes are provided on the bottom surface and side wall of the groove with a gate oxide film therebetween whereby the transistor has the blocking capability of achieving a normally OFF state.
摘要:
The power semiconductor device includes a plurality of trenches disposed in a surface of a semiconductor active layer to reach a first base layer of a first conductivity type. The trenches are disposed at intervals to partition a main cell and a dummy cell. In the main cell, a second base layer of a second conductivity type and an emitter layer of the first conductivity type are disposed. In the dummy cell, a buffer layer of the second conductivity type is disposed. A gate electrode and gate insulating film are disposed in each trench. A partition structure is disposed in the surface of the semiconductor active layer to electrically isolate the buffer layer from the emitter electrode.