公开(公告)号：US06462411B1

公开(公告)日：2002-10-08

申请号：US09205299

申请日：1998-12-04

申请人： Tomoji Watanabe ,  Nobuyuki Mise ,  Toshiyuki Uchino ,  Norio Suzuki ,  Yoshihiko Sakurai ,  Toshiya Uenishi ,  Yohsuke Inoue ,  Yasuhiro Inokuchi ,  Fumihide Ikeda

发明人： Tomoji Watanabe ,  Nobuyuki Mise ,  Toshiyuki Uchino ,  Norio Suzuki ,  Yoshihiko Sakurai ,  Toshiya Uenishi ,  Yohsuke Inoue ,  Yasuhiro Inokuchi ,  Fumihide Ikeda

IPC分类号： H01L2334

CPC分类号： H01L21/67748 ,  H01L21/67109 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68785 ,  Y10T29/41

摘要： A semiconductor wafer processing apparatus comprises a reaction furnace capable of heating inside thereof, a wafer mount for mounting a semiconductor wafer thereon and a transfer device. The wafermount includes an opening which is greater than the semiconductor wafer and which has a circle shape or a shape substantially similar to an outer periphery of the semiconductor wafer, and includes a wafer supporting portion projecting inwardly of the opening for supporting the semiconductor wafer. The transfer device is capable of holding the wafer mount outside the semiconductor wafer as viewed from a vertical direction, and transferring the wafer mount carrying the semiconductor wafer thereon substantially horizontally into and/or out from the reaction furnace.

摘要翻译： 半导体晶片处理装置包括能够在其内部加热的反应炉，用于将半导体晶片安装在其上的晶片载体和转印装置。 所述瓦台车包括比所述半导体晶片大的开口部，该开口部具有与所述半导体晶片的外周大致相同的圆形或形状，并且具有向所述开口的内侧突出以支撑所述半导体晶片的晶片支撑部。 传送装置能够从垂直方向观察时将晶片安装体保持在半导体晶片外部，并将承载半导体晶片的晶片载体基本水平地转移到反应炉内和/或从反应炉出来。

公开(公告)号：US06332927B1

公开(公告)日：2001-12-25

申请号：US09668353

申请日：2000-09-25

申请人： Yasuhiro Inokuchi ,  Fumihide Ikeda

发明人： Yasuhiro Inokuchi ,  Fumihide Ikeda

IPC分类号： C23C1600

CPC分类号： C23C16/4557 ,  H01L21/67109

摘要： A substrate processing apparatus comprises a heating member, a reaction tube body provided in the heating member and having a first gas introducing section and a gas exhausting section, a substrate holder disposed in the reaction tube body for horizontally holding a substrate within the reaction tube body between the first gas introducing section and the gas exhausting section, a gas heating tube provided in the heating member along the reaction tube body, and having a second gas introducing section and a gas discharging section which is in communication with the first gas introducing section of the reaction tube body, the gas heating tube being arranged such that a gas flowing in the gas heating tube first flows form the first gas introducing section side toward the gas exhausting section side, and then returns to flow from the gas exhausting section side toward the first gas introducing section side.

摘要翻译： 基板处理装置包括加热构件，设置在加热构件中的反应管体，具有第一气体导入部和排气部，设置在反应管主体中的基板保持件，用于水平地保持反应管体内的基板 在所述第一气体导入部和所述排气部之间设置有沿着所述反应管体设置在所述加热部件中的气体加热管，并且具有第二气体导入部和与所述第一气体导入部连通的气体排出部， 反应管体，气体加热管被布置成使得在气体加热管中流动的气体首先从第一气体引入部分侧朝向排气部侧流动，然后从气体排出部分侧向 第一气体导入部侧。

公开(公告)号：US06217663B1

公开(公告)日：2001-04-17

申请号：US08879932

申请日：1997-06-20

申请人： Yasuhiro Inokuchi ,  Fumihide Ikeda ,  Michiko Nishiwaki ,  Masatoshi Takada ,  Mamoru Sueyoshi

发明人： Yasuhiro Inokuchi ,  Fumihide Ikeda ,  Michiko Nishiwaki ,  Masatoshi Takada ,  Mamoru Sueyoshi

IPC分类号： C23C1600

CPC分类号： H01L21/68707 ,  H01L21/67167 ,  H01L21/67745 ,  H01L21/67781 ,  H01L21/68721 ,  H01L21/68735

摘要： A substrate processing apparatus comprises a hot-wall type processing chamber for processing a substrate, a heater capable of heating an interior of the processing chamber, a substrate holder capable of holding the substrate and processing the substrate in the processing chamber in a state where the substrate holder holds the substrate, and a mechanism, which is capable of allowing the substrate holder to hold the substrate and then transferring the substrate holder holding the substrate into the processing chamber, and/or which is capable of carrying out the substrate holder from the processing chamber in a state where the substrate holder holds the substrate, and then separating the substrate from the substrate holder.

摘要翻译： 基板处理装置包括用于处理基板的热壁型处理室，能够加热处理室内部的加热器，能够保持基板并在该处理室内处理基板的基板保持器，其中， 衬底保持器保持衬底，以及机构，其能够允许衬底保持器保持衬底，然后将保持衬底的衬底保持器转移到处理室中，和/或能够从衬底保持器 处理室，其中衬底保持器保持衬底，然后将衬底与衬底保持器分离。

公开(公告)号：US6132553A

公开(公告)日：2000-10-17

申请号：US90216

申请日：1998-06-04

申请人： Fumihide Ikeda ,  Yasuhiro Inokuchi

发明人： Fumihide Ikeda ,  Yasuhiro Inokuchi

IPC分类号： H01L21/302 ,  H01L21/00 ,  H01L21/205 ,  H01L21/22 ,  H01L21/3065 ,  C23F1/02 ,  C23C16/00

CPC分类号： H01L21/67011

摘要： A substrate processing apparatus includes a reaction container for processing a substrate therein. The reaction container is provided with two open ends. The reaction container includes a central cylindrical body and two flanges respectively provided at the both open ends. The central cylindrical body includes at its both ends thin portion which are thinner than the central portion of the central cylindrical body, the flanges are respectively provided with flange connecting portions which are thinner than the central portion of the central cylindrical body, and the thin portions of the central cylindrical body and the flange connecting portions are welded together.

摘要翻译： 基板处理装置包括用于在其中处理基板的反应容器。 反应容器设有两个开口端。 反应容器包括分别设置在两个开口端的中心圆柱体和两个凸缘。 中心圆柱体的两端薄部分比中心圆筒体的中心部分薄，凸缘分别设有比中心圆柱体的中心部分更薄的凸缘连接部分，薄壁部分 的中心圆柱体和法兰连接部分焊接在一起。

公开(公告)号：US5960159A

公开(公告)日：1999-09-28

申请号：US950185

申请日：1997-10-14

申请人： Fumihide Ikeda ,  Junichi Machida ,  Masayuki Tomita ,  Yasuhiro Inokuchi ,  Kazuhiro Shimeno ,  Hisashi Nomura ,  Tetsuaki Inada

发明人： Fumihide Ikeda ,  Junichi Machida ,  Masayuki Tomita ,  Yasuhiro Inokuchi ,  Kazuhiro Shimeno ,  Hisashi Nomura ,  Tetsuaki Inada

IPC分类号： H01L21/00 ,  F26B3/30

CPC分类号： H01L21/67109

摘要： A substrate processing apparatus includes a substrate supporting pedestal having an upper substrate supporting pedestal and a lower substrate supporting pedestal which are vertically stacked, an upper resistance heater provided above the upper substrate supporting pedestal so as to be opposite to the upper substrate supporting pedestal, and a lower resistance heater provided under the lower substrate supporting pedestal so as to be opposite to the lower substrate supporting pedestal. Each of the upper substrate supporting pedestal and the lower substrate supporting pedestal is capable of mounting a substrate or substrates in a substantially horizontal position, and the lower substrate supporting pedestal including an opening which exposes the substrate in its entirety or openings which expose the substrates in their entireties as viewed from under the lower substrate supporting pedestal.

摘要翻译： 基板处理装置包括：具有上基板支撑基座的基板支撑基座和垂直堆叠的下基板支撑基座;上电阻加热器，设置在上基板支撑基座的上方，以与上基板支撑基座相对;以及 设置在下基板支撑基座下方以与下基板支撑基座相对的下电阻加热器。 上基板支撑基座和下基板支撑基座中的每一个能够将基板或基板安装在基本水平的位置，并且下基板支撑基座包括将基板全部曝光的开口或露出基板的开口 它们的整体从下基板支撑底座下方观察。

公开(公告)号：US06270581B1

公开(公告)日：2001-08-07

申请号：US09022620

申请日：1998-02-12

申请人： Yasuhiro Inokuchi ,  Fumihide Ikeda

发明人： Yasuhiro Inokuchi ,  Fumihide Ikeda

IPC分类号： B05C1100

CPC分类号： C30B29/06 ,  C30B33/005

摘要： A wet-oxidation apparatus comprises a reaction tube capable of accommodating a semiconductor wafer; a water vapor generating apparatus for generating water vapor; a gas supply passage for supplying gas into the reaction tube; a discharge passage; an inert gas supply unit for supplying an inert gas; a gas switching unit capable of switching between the water vapor from the water vapor generating unit and the inert gas from the inert gas supply unit, so as to supply either one of the water vapor and the inert gas to the gas supply passage; and a control unit controlling such that: at least while wet-oxidation processing of the semiconductor wafer are conducted predetermined times in the reaction tube, the water vapor generating apparatus continuously generates the water vapor; whenever the wet-oxidation processing is started one time, the water vapor from the water vapor generating apparatus is switched toward the gas supply passage; and whenever the wet-oxidation processing is completed one time, the water vapor from the water vapor generating apparatus is switched toward the discharge passage, and the inert gas from the inert gas supply unit is supplied to the gas supply passage.

公开(公告)号：US6139641A

公开(公告)日：2000-10-31

申请号：US881147

申请日：1997-06-24

申请人： Yasuhiro Inokuchi ,  Fumihide Ikeda

发明人： Yasuhiro Inokuchi ,  Fumihide Ikeda

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/00 ,  C23C16/00

CPC分类号： C23C16/4557 ,  H01L21/67109

摘要： A substrate processing apparatus comprises a heating member, a reaction tube body provided in the heating member and having a first gas introducing section and a gas exhausting section, a substrate holder disposed in the reaction tube body for horizontally holding a substrate within the reaction tube body between the first gas introducing section and the gas exhausting section, a gas heating tube provided in the heating member along the reaction tube body, and having a second gas introducing section and a gas discharging section which is in communication with the first gas introducing section of the reaction tube body, the gas heating tube being arranged such that a gas flowing in the gas heating tube first flows form the first gas introducing section side toward the gas exhausting section side, and then returns to flow from the gas exhausting section side toward the first gas introducing section side.

摘要翻译： 基板处理装置包括加热构件，设置在加热构件中的反应管体，具有第一气体导入部和排气部，设置在反应管主体中的基板保持件，用于水平地保持反应管体内的基板 在所述第一气体导入部和所述排气部之间设置有沿着所述反应管体设置在所述加热部件中的气体加热管，并且具有第二气体导入部和与所述第一气体导入部连通的气体排出部， 反应管体，气体加热管被布置成使得在气体加热管中流动的气体首先从第一气体引入部分侧朝向排气部侧流动，然后从气体排出部分侧朝向 第一气体导入部侧。

公开(公告)号：US08025739B2

公开(公告)日：2011-09-27

申请号：US12571706

申请日：2009-10-01

申请人： Kiyohisa Ishibashi ,  Yasuhiro Inokuchi ,  Atsushi Moriya ,  Yoshiaki Hashiba

发明人： Kiyohisa Ishibashi ,  Yasuhiro Inokuchi ,  Atsushi Moriya ,  Yoshiaki Hashiba

IPC分类号： B08B7/02

CPC分类号： C23C16/4405 ,  Y10S438/905

摘要： In a dry cleaning process, breakage of a gas supply pipe can be prevented, and maintenance efficiency can be increased. There is provided a method of manufacturing a semiconductor device, comprising: (a) loading a substrate into a process chamber; (b) forming a silicon film or a silicon compound film on the substrate loaded in the process chamber by supplying a raw-material gas to a gas supply pipe disposed in the process chamber to introduce the raw-material gas into the process chamber; (c) unloading the substrate from the process chamber; (d) heating an inside of the process chamber after unloading the substrate to generate a crack in a thin film formed inside the process chamber; (e) decreasing an inside temperature of the process chamber after carrying out the step (d) with the substrate unloaded from the process chamber; and (f) introducing a cleaning gas into the process chamber by supplying the cleaning gas to the gas supply pipe after the step (e) with the substrate unloaded from the process chamber.

摘要翻译： 在干洗过程中，可以防止气体供给管的破损，并且可以提高维护效率。 提供一种制造半导体器件的方法，包括：（a）将衬底装载到处理室中; （b）通过向设置在处理室中的气体供给管供给原料气体，将原料气体引入处理室，在装载在处理室中的基板上形成硅膜或硅化合物膜; （c）从处理室卸载基板; （d）在卸载基板之后加热处理室的内部，以在处理室内形成的薄膜产生裂纹; （e）在从所述处理室卸载的所述基板进行步骤（d）之后降低所述处理室的内部温度; 以及（f）通过在步骤（e）之后通过从处理室卸载基板将清洁气体供给到气体供给管，将清洁气体引入处理室。

公开(公告)号：US20090104740A1

公开(公告)日：2009-04-23

申请号：US11921562

申请日：2006-07-25

申请人： Yasuhiro Inokuchi ,  Astushi Moriya ,  Kastusuhiko Yamamoto ,  Yoshiaki Hashiba ,  Takashi Yokogawa

发明人： Yasuhiro Inokuchi ,  Astushi Moriya ,  Kastusuhiko Yamamoto ,  Yoshiaki Hashiba ,  Takashi Yokogawa

IPC分类号： H01L21/8232

CPC分类号： C23C16/45523 ,  C23C16/24 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636

摘要： Disclosed is a producing method of a semiconductor device, including: loading a silicon substrate into a processing chamber, the silicon substrate having a silicon nitride film or a silicon oxide film on at least a portion of a surface thereof and a silicon surface being exposed from the surface; and alternately repeating a first introducing at least a silane-compound gas into the processing chamber and a second introducing at least etching gas a plurality of times to selectively grow an epitaxial film on the silicon surface, wherein the alternate repeating is started with the second introducing prior to the first introducing.

摘要翻译： 公开了一种半导体器件的制造方法，包括：将硅衬底装载到处理室中，所述硅衬底在其表面的至少一部分上具有氮化硅膜或氧化硅膜，并且硅表面暴露于 表面 并且交替地重复首先将至少一种硅烷化合物气体引入到所述处理室中，以及第二次引入至少蚀刻气体多次以在所述硅表面上选择性地生长外延膜，其中所述交替重复开始于所述第二引入 在第一次介绍之前。

公开(公告)号：US20080251008A1

公开(公告)日：2008-10-16

申请号：US10592350

申请日：2005-03-11

申请人： Atsushi Moriya ,  Yasuhiro Inokuchi ,  Yasuo Kunii

发明人： Atsushi Moriya ,  Yasuhiro Inokuchi ,  Yasuo Kunii

IPC分类号： H01L21/205 ,  H01L21/28 ,  H01L21/285 ,  H01L29/417 ,  H01L29/78

CPC分类号： C23C16/22 ,  C23C16/04 ,  C23C16/24 ,  C23C16/4583 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/28525 ,  H01L21/28562 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/7834 ,  Y10T117/10 ,  Y10T117/1016

摘要： Disclosed is a hot wall type substrate processing apparatus, including a processing chamber which is to accommodate at least one product substrate therein; a heating member which is disposed outside of the processing chamber and which is to heat the product substrate; a processing gas supply system connected to the processing chamber; and an exhaust system, wherein with a member from which a Si film is exposed being disposed such as to be opposed to a surface on which selective growth is to be effected of the product substrate, an epitaxial film including Si is allowed to selectively grow on a Si surface of the product substrate.

摘要翻译： 公开了一种热壁型基板处理装置，包括：处理室，其用于容纳至少一个产品基板; 加热构件，其设置在所述处理室的外部并且用于加热所述产品基板; 连接到处理室的处理气体供应系统; 以及排气系统，其中与Si膜暴露的构件配置成与要对产品衬底进行选择性生长的表面相对，允许包括Si的外延膜选择性地生长在 产品基板的Si表面。