RF POWER AMPLIFIER
    1.
    发明申请
    RF POWER AMPLIFIER 审中-公开
    射频功率放大器

    公开(公告)号:US20100301947A1

    公开(公告)日:2010-12-02

    申请号:US12814881

    申请日:2010-06-14

    IPC分类号: H03F3/68

    摘要: The RF power amplifier includes first and second amplifiers Q1 and Q2 as final-stage amplification power devices connected in parallel between an input terminal RF_In and an output terminal RF_Out. The amplifiers Q1 and Q2 are formed on one semiconductor chip. The first bias voltage Vg1 of the amplifier Q1 is set to be higher than the second bias voltage Vg2 of the amplifier Q2 so that the amplifier Q1 is operational between Class B and AB, and Q2 is operational in Class C. The first effective device size Wgq1 of the amplifier Q1 is intentionally set to be smaller than the second effective device size Wgq2 of the amplifier Q2 beyond a range of a manufacturing error of the semiconductor chip. An RF power amplifier that exhibits a high power-added efficiency characteristic regardless of whether the output power is High or Low can be materialized.

    摘要翻译: RF功率放大器包括作为在输入端子RF_In和输出端子RF_Out之间并联连接的最终级放大功率器件的第一和第二放大器Q1和Q2。 放大器Q1和Q2形成在一个半导体芯片上。 放大器Q1的第一偏置电压Vg1被设置为高于放大器Q2的第二偏置电压Vg2,使得放大器Q1在B类和AB之间工作,并且Q2在C类中可操作。第一有效器件尺寸 放大器Q1的Wgq1被有意地设置为小于放大器Q2的第二有效器件尺寸Wgq2超过半导体芯片的制造误差的范围。 无论输出功率是高还是低,都能实现具有高功率附加效率特性的RF功率放大器。

    RF power amplifier
    2.
    发明授权
    RF power amplifier 有权
    射频功率放大器

    公开(公告)号:US07756494B2

    公开(公告)日:2010-07-13

    申请号:US11764511

    申请日:2007-06-18

    IPC分类号: H01Q11/12

    摘要: The RF power amplifier includes first and second amplifiers Q1 and Q2 as final-stage amplification power devices connected in parallel between an input terminal RF_In and an output terminal RF_Out. The amplifiers Q1 and Q2 are formed on one semiconductor chip. The first bias voltage Vg1 of the amplifier Q1 is set to be higher than the second bias voltage Vg2 of the amplifier Q2 so that the amplifier Q1 is operational between Class B and AB, and Q2 is operational in Class C. The first effective device size Wgq1 of the amplifier Q1 is intentionally set to be smaller than the second effective device size Wgq2 of the amplifier Q2 beyond a range of a manufacturing error of the semiconductor chip. An RF power amplifier that exhibits a high power-added efficiency characteristic regardless of whether the output power is High or Low can be materialized.

    摘要翻译: RF功率放大器包括作为在输入端子RF_In和输出端子RF_Out之间并联连接的最终级放大功率器件的第一和第二放大器Q1和Q2。 放大器Q1和Q2形成在一个半导体芯片上。 放大器Q1的第一偏置电压Vg1被设置为高于放大器Q2的第二偏置电压Vg2,使得放大器Q1在B类和AB之间工作,并且Q2在C类中可操作。第一有效器件尺寸 放大器Q1的Wgq1被有意地设置为小于放大器Q2的第二有效器件尺寸Wgq2超过半导体芯片的制造误差的范围。 无论输出功率是高还是低,都能实现具有高功率附加效率特性的RF功率放大器。

    RF POWER AMPLIFIER
    3.
    发明申请
    RF POWER AMPLIFIER 有权
    射频功率放大器

    公开(公告)号:US20070298736A1

    公开(公告)日:2007-12-27

    申请号:US11764511

    申请日:2007-06-18

    IPC分类号: H01Q11/12 H04B1/04

    摘要: The RF power amplifier includes first and second amplifiers Q1 and Q2 as final-stage amplification power devices connected in parallel between an input terminal RF_In and an output terminal RF_Out. The amplifiers Q1 and Q2 are formed on one semiconductor chip. The first bias voltage Vg1 of the amplifier Q1 is set to be higher than the second bias voltage Vg2 of the amplifier Q2 so that the amplifier Q1 is operational between Class B and AB, and Q2 is operational in Class C. The first effective device size Wgq1 of the amplifier Q1 is intentionally set to be smaller than the second effective device size Wgq2 of the amplifier Q2 beyond a range of a manufacturing error of the semiconductor chip. An RF power amplifier that exhibits a high power-added efficiency characteristic regardless of whether the output power is High or Low can be materialized.

    摘要翻译: RF功率放大器包括作为在输入端子RF_In和输出端子RF_Out之间并联连接的终端放大功率器件的第一和第二放大器Q 1和Q 2。 放大器Q 1和Q 2形成在一个半导体芯片上。 放大器Q 1的第一偏置电压Vg1被设置为高于放大器Q 2的第二偏置电压Vg ​​2,使得放大器Q 1在B类和AB之间工作,并且Q 2在C类中可操作 放大器Q 1的第一有效器件尺寸Wgq1被有意地设置为小于放大器Q 2的第二有效器件尺寸Wgq 2超过半导体芯片的制造误差的范围。 无论输出功率是高还是低,都能实现具有高功率附加效率特性的RF功率放大器。

    Information processing apparatus
    10.
    发明授权

    公开(公告)号:US09678561B2

    公开(公告)日:2017-06-13

    申请号:US14036395

    申请日:2013-09-25

    申请人: Satoshi Tanaka

    发明人: Satoshi Tanaka

    IPC分类号: G06F1/32

    摘要: In the invention, a first processor that controls operation of a predetermined controlled unit and a second processor are operated in a first mode, a second mode, and a third mode, in the first mode the first processor and second processor are operable respectively, in the second mode respective amounts of power supplied to the first and second processors are lower than that in the first mode, in the third mode respective amounts of power supplied to the first and second processors are an amount between that in the first mode and that in the second mode and at least the predetermined controlled unit is operable, and in the second mode, the first processor puts a process related to the first processor before a process related to the second processor until the second mode is transited to the third mode.