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    Method of fabricating stacked capacitor cell memory devices
    2.
    发明授权
    Method of fabricating stacked capacitor cell memory devices 失效
    叠层电容器单元存储器件的制造方法

    公开(公告)号：US5374576A

    公开(公告)日：1994-12-20

    申请号：US72482

    申请日：1993-06-03

    申请人： Shinichiro Kimura ,  Naotaka Hashimoto ,  Yoshio Sakai ,  Tokuo Kure ,  Yoshifumi Kawamoto ,  Toru Kaga ,  Eiji Takeda

    发明人： Shinichiro Kimura ,  Naotaka Hashimoto ,  Yoshio Sakai ,  Tokuo Kure ,  Yoshifumi Kawamoto ,  Toru Kaga ,  Eiji Takeda

    IPC分类号： H01L27/108 ,  H01L29/417 ,  H01L29/45 ,  H01L21/265 ,  H01L21/70 ,  H01L27/00

    CPC分类号： H01L27/10808 ,  H01L27/10817 ,  H01L29/41775 ,  H01L29/456

    摘要： A semiconductor memory device having STC cells wherein the major portions of active regions consisting of channel-forming portions are inclined at an angle of 45 degrees with respect to word lines and bit lines that meet at right angles with each other, thereby enabling the storage capacity portions to be arranged very densely and a sufficiently large capacity to be maintained with very small cell areas. Since the storage capacity portions are formed even on the bit lines, the bit lines are shielded, so that the capacity decreases between the bit lines and, hence, the memory array noise decreases. It is also possible to design the charge storage capacity portion so that a part of thereof has a form of a wall substantially vertical to the substrate in order to increase the capacity.

    摘要翻译： 具有STC单元的半导体存储器件，其中由沟道形成部分组成的有源区的主要部分相对于彼此成直角相交的字线和位线以45度的角度倾斜，从而使得存储容量 部分布置非常密集，并且具有足够大的容量以保持非常小的单元格区域。 由于存储容量部分甚至在位线上形成，所以位线被屏蔽，使得位线之间的容量减小，因此存储器阵列噪声减小。 也可以设计电荷存储容量部分，使得其一部分具有基本上垂直于衬底的壁的形式，以增加容量。

    Semiconductor memory device
    3.
    发明授权
    Semiconductor memory device 失效
    半导体存储器件

    公开(公告)号：US06878586B2

    公开(公告)日：2005-04-12

    申请号：US10458271

    申请日：2003-06-11

    申请人： Shinichiro Kimura ,  Naotaka Hashimoto ,  Yoshio Sakai ,  Tokuo Kure ,  Yoshifumi Kawamoto ,  Toru Kaga ,  Eiji Takeda

    发明人： Shinichiro Kimura ,  Naotaka Hashimoto ,  Yoshio Sakai ,  Tokuo Kure ,  Yoshifumi Kawamoto ,  Toru Kaga ,  Eiji Takeda

    IPC分类号： H01L27/108 ,  H01L29/417 ,  H01L29/45 ,  H01L21/8242

    CPC分类号： H01L27/10817 ,  H01L27/10808 ,  H01L29/41775 ,  H01L29/456

    摘要： A semiconductor memory device having STC cells wherein the major portions of active regions consisting of channel-forming portions are inclined at an angle of 45 degrees with respect to word lines and bit lines that meet at right angles with each other, thereby enabling the storage capacity portions to be arranged very densely and a sufficiently large capacity to be maintained with very small cell areas. Since the storage capacity portions are formed even on the bit lines, the bit lines are shielded, so that the capacity decreases between the bit lines and, hence, the memory array noise decreases. It is also possible to design the charge storage capacity portion so that a part of thereof has a form of a wall substantially vertical to the substrate in order to increase the capacity.

    摘要翻译： 具有STC单元的半导体存储器件，其中由沟道形成部分组成的有源区的主要部分相对于彼此成直角相交的字线和位线以45度的角度倾斜，从而使得存储容量 部分布置非常密集，并且具有足够大的容量以保持非常小的单元格区域。 由于存储容量部分甚至在位线上形成，所以位线被屏蔽，使得位线之间的容量减小，因此存储器阵列噪声减小。 也可以设计电荷存储容量部分，使得其一部分具有基本上垂直于衬底的壁的形式，以增加容量。

    Semiconductor memory device
    4.
    发明授权
    Semiconductor memory device 失效
    半导体存储器件

    公开(公告)号：US5591998A

    公开(公告)日：1997-01-07

    申请号：US443106

    申请日：1995-05-17

    申请人： Shinichiro Kimura ,  Naotaka Hashimoto ,  Yoshio Sakai ,  Tokuo Kure ,  Yoshifumi Kawamoto ,  Toru Kaga ,  Eiji Takeda

    发明人： Shinichiro Kimura ,  Naotaka Hashimoto ,  Yoshio Sakai ,  Tokuo Kure ,  Yoshifumi Kawamoto ,  Toru Kaga ,  Eiji Takeda

    IPC分类号： H01L27/108 ,  H01L29/417 ,  H01L29/45

    CPC分类号： H01L27/10808 ,  H01L27/10817 ,  H01L29/41775 ,  H01L29/456

    摘要： A semiconductor memory device having STC cells wherein the major portions of active regions consisting of channel-forming portions are inclined at an angle of 45 degrees with respect to word lines and bit lines that meet at right angles with each other, thereby enabling the storage capacity portions to be arranged very densely and a sufficiently large capacity to be maintained with very small cell areas. Since the storage capacity portions are formed even on the bit lines, the bit lines are shielded, so that the capacity decreases between the bit lines and, hence, the memory array noise decreases. It is also possible to design the charge storage capacity portion so that a part of thereof has a form of a wall substantially vertical to the substrate in order to increase the capacity.

    摘要翻译： 具有STC单元的半导体存储器件，其中由沟道形成部分组成的有源区的主要部分相对于彼此成直角相交的字线和位线以45度的角度倾斜，从而使得存储容量 部分布置非常密集，并且具有足够大的容量以保持非常小的单元格区域。 由于存储容量部分甚至在位线上形成，所以位线被屏蔽，使得位线之间的容量减小，因此存储器阵列噪声减小。 也可以设计电荷存储容量部分，使得其一部分具有基本上垂直于衬底的壁的形式，以增加容量。

    Semiconductor memory device having stacked capacitors
    5.
    发明授权
    Semiconductor memory device having stacked capacitors 失效
    具有层叠电容器的半导体存储器件

    公开(公告)号：US5583358A

    公开(公告)日：1996-12-10

    申请号：US324352

    申请日：1994-10-17

    申请人： Shinichiro Kimura ,  Naotaka Hashimoto ,  Yoshio Sakai ,  Tokuo Kure ,  Yoshifumi Kawamoto ,  Toru Kaga ,  Eiji Takeda

    发明人： Shinichiro Kimura ,  Naotaka Hashimoto ,  Yoshio Sakai ,  Tokuo Kure ,  Yoshifumi Kawamoto ,  Toru Kaga ,  Eiji Takeda

    IPC分类号： H01L27/108 ,  H01L29/417 ,  H01L29/45

    CPC分类号： H01L27/10808 ,  H01L27/10817 ,  H01L29/41775 ,  H01L29/456

    摘要： A semiconductor memory device having STC cells wherein the major portions of active regions consisting of channel-forming portions are inclined at an angle of 45 degrees with respect to word lines and bit lines that meet at right angles with each other, thereby enabling the storage capacity portions to be arranged very densely and a sufficiently large capacity to be maintained with very small cell areas. Since the storage capacity portions are formed even on the bit lines, the bit lines are shielded, so that the capacity decreases between the bit lines and, hence, the memory array noise decreases. It is also possible to design the charge storage capacity portion so that a part of thereof has a form of a wall substantially vertical to the substrate in order to increase the capacity.

    摘要翻译： 具有STC单元的半导体存储器件，其中由沟道形成部分组成的有源区的主要部分相对于彼此成直角相交的字线和位线以45度的角度倾斜，从而使得存储容量 部分布置非常密集，并且具有足够大的容量以保持非常小的单元格区域。 由于存储容量部分甚至在位线上形成，所以位线被屏蔽，使得位线之间的容量减小，因此存储器阵列噪声减小。 也可以设计电荷存储容量部分，使得其一部分具有基本上垂直于衬底的壁的形式，以增加容量。

    Semiconductor memory device having stacked capacitor cells
    6.
    发明授权
    Semiconductor memory device having stacked capacitor cells 失效
    具有层叠电容器单元的半导体存储器件

    公开(公告)号：US5140389A

    公开(公告)日：1992-08-18

    申请号：US475148

    申请日：1990-02-05

    申请人： Shinichiro Kimura ,  Naotaka Hashimoto ,  Yoshio Sakai ,  Tokuo Kure ,  Yoshifumi Kawamoto ,  Toru Kaga ,  Eiji Takeda

    发明人： Shinichiro Kimura ,  Naotaka Hashimoto ,  Yoshio Sakai ,  Tokuo Kure ,  Yoshifumi Kawamoto ,  Toru Kaga ,  Eiji Takeda

    IPC分类号： H01L27/108

    CPC分类号： H01L27/10817

    摘要： A semiconductor memory device having STC cells wherein the major portions of active regions consisting of channel-forming portions are inclined at an angle of 45 degrees with respect to word lines and bit lines that meet at right angles with each other, thereby enabling the storage capacitor portions to be arranged very densely and a sufficiently large capacitance to be maintained with very small cell areas. Since the storage capacitor portions are formed even on the bit lines, the bit lines are shielded, so that the capacitance decreases between the bit lines and, hence, the memory array noise decreases. It is also possible to design the charge storage capacitor portion so that a part thereof is in the form of a wall substantially vertical to the substrate in order to increase the capacitance.

    摘要翻译： 具有STC单元的半导体存储器件，其中由沟道形成部分组成的有源区的主要部分相对于彼此成直角相交的字线和位线以45度的角度倾斜，从而使得存储电容器 要非常密集地布置的部分和足够大的电容以保持非常小的电池区域。 由于存储电容器部分甚至在位线上形成，所以位线被屏蔽，使得位线之间的电容减小，因此存储器阵列噪声减小。 也可以设计电荷存储电容器部分，使得其一部分呈基本上垂直于衬底的壁的形式，以增加电容。

    Dynamic random access memory having trench capacitors and vertical transistors
    7.
    发明授权
    Dynamic random access memory having trench capacitors and vertical transistors 失效
    具有沟槽电容器和垂直晶体管的动态随机存取存储器

    公开(公告)号：US5177576A

    公开(公告)日：1993-01-05

    申请号：US695984

    申请日：1991-05-06

    申请人： Shin'ichiro Kimura ,  Tokuo Kure ,  Toru Kaga ,  Digh Hisamoto ,  Eiji Takeda

    发明人： Shin'ichiro Kimura ,  Tokuo Kure ,  Toru Kaga ,  Digh Hisamoto ,  Eiji Takeda

    IPC分类号： H01L27/10 ,  H01L21/8242 ,  H01L27/108

    CPC分类号： H01L27/10841

    摘要： A vertical semiconductor memory device is provided which capable of miniaturization. More particularly, a memory cell is provided having a trench capacitor and a vertical transistor in a dynamic random access memory suitable for high density integration. An object of this arrangement is to provide a vertical memory cell capable of miniaturization for use in a ultra-high density integration DRAM of a Gbit class. This memory cell is characterized in that each memory cell is covered with an oxide film, an impurity area does not exist on the substrate side, an area in which a channel area is formed is a hollow cylindrical single crystal area, connection of impurity areas as source-drain areas and bit lines and the electrode of a capacitor is made by self-alignment and connection between a word line electrode and a gate electrode is also made by self-alignment.

    摘要翻译： 提供能够小型化的垂直半导体存储器件。 更具体地说，在动态随机存取存储器中提供具有沟槽电容器和垂直晶体管的存储单元，其适用于高密度集成。 这种布置的目的是提供一种能够小型化的垂直存储单元，用于Gbit级的超高密度集成DRAM。 该存储单元的特征在于，每个存储单元被氧化物膜覆盖，基板侧不存在杂质区域，形成沟道区域的区域是中空圆柱形单晶区域，杂质区域的连接为 源极 - 漏极区域和位线，并且电容器的电极通过自对准而形成，并且字线电极和栅电极之间的连接也通过自对准来进行。

    Method for formation of insulation film on silicon buried in trench
    8.
    发明授权
    Method for formation of insulation film on silicon buried in trench 失效
    在埋在沟槽中的硅上形成绝缘膜的方法

    公开(公告)号：US4873203A

    公开(公告)日：1989-10-10

    申请号：US221351

    申请日：1988-07-19

    申请人： Toru Kaga ,  Shinichiro Kimura ,  Tokuo Kure ,  Yoshifumi Kawamoto ,  Hideo Sunami

    发明人： Toru Kaga ,  Shinichiro Kimura ,  Tokuo Kure ,  Yoshifumi Kawamoto ,  Hideo Sunami

    IPC分类号： H01L27/04 ,  H01L21/316 ,  H01L21/32 ,  H01L21/334 ,  H01L21/763 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108

    CPC分类号： H01L29/66181 ,  H01L21/32 ,  H01L21/763

    摘要： An insulation film on silicon buried in a trench is prepared by forming a field oxide film by using a first Si.sub.3 N.sub.4 mask formed on a silicon substrate, forming a second Si.sub.3 N.sub.4 mask for formation of a trench, forming a trench in the silicon substrate by using the second Si.sub.3 N.sub.4 mask, burying polycrystalline silicon in the trench, removing the second Si.sub.3 N.sub.4 mask while leaving the first Si.sub.3 N.sub.4 mask and oxidizing the surface of the polycrystalline silicon buried in the trench by thermal oxidation. The so-formed insulation film on silicon buried in the trench has a uniform thickness and a high dielectric strength. The surface of the substrate at a part where an active element will be formed in the future is not oxidized.

    摘要翻译： 通过使用在硅衬底上形成的第一Si 3 N 4掩模形成场氧化膜，形成用于形成沟槽的第二Si 3 N 4掩模，通过使用硅衬底形成硅衬底中的沟槽来制备掩埋在沟槽中的硅上的绝缘膜 第二Si 3 N 4掩模，在沟槽中埋入多晶硅，除去第二Si 3 N 4掩模，同时留下第一Si 3 N 4掩模，并通过热氧化氧化掩埋在沟槽中的多晶硅的表面。 埋在沟槽中的硅上如此形成的绝缘膜具有均匀的厚度和高介电强度。 在将来将形成有源元件的部分处的基板的表面不被氧化。