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    Organic Thin Film Transistor and Method for Surface Modification of Gate Insulating Layer of Organic Thin Film Transistor
    3.
    发明申请
    Organic Thin Film Transistor and Method for Surface Modification of Gate Insulating Layer of Organic Thin Film Transistor 审中-公开
    有机薄膜晶体管及有机薄膜晶体管栅极绝缘层表面改性方法

    公开(公告)号：US20080315190A1

    公开(公告)日：2008-12-25

    申请号：US12065416

    申请日：2006-08-25

    申请人： Kazuhito Tsukagoshi ,  Kunji Shigeto ,  Iwao Yagi ,  Yoshinobu Aoyagi

    发明人： Kazuhito Tsukagoshi ,  Kunji Shigeto ,  Iwao Yagi ,  Yoshinobu Aoyagi

    IPC分类号： H01L51/05 ,  H01L21/312

    CPC分类号： H01L51/0545 ,  H01L27/283 ,  H01L51/0011 ,  H01L51/0055 ,  H01L51/0525 ,  H01L51/0533

    摘要： This invention provides an organic thin film transistor, which can realize the modification of the surface of a gate insulating layer not only the case where the gate insulating layer is formed of an oxide, but also the case where the gate insulating layer is formed of a material other than the oxide and consequently can significantly improve transistor characteristics, and a method for surface modification of a gate insulating layer in the organic thin film transistor. In an organic thin film transistor comprising a gate insulating layer, an organic semiconductor layer stacked on the gate insulating layer, and an electrode provided on the organic semiconductor layer, a polyparaxylylene layer formed of a continuous polyparaxylylene film is formed on the surface of the gate insulating layer, between the gate insulating layer and the organic semiconductor layer, so as to face and contact with the organic semiconductor layer.

    摘要翻译： 本发明提供了一种有机薄膜晶体管，其不仅可以实现栅极绝缘层的表面的修改，而且可以实现栅极绝缘层由氧化物形成的情况，而且栅极绝缘层由 因此可以显着提高晶体管的特性，以及在有机薄膜晶体管中对栅极绝缘层进行表面改性的方法。 在栅极绝缘层，堆叠在栅极绝缘层上的有机半导体层和设置在有机半导体层上的电极的有机薄膜晶体管中，在栅极的表面上形成由连续的聚对二甲苯膜形成的聚对二甲苯层 绝缘层，位于栅极绝缘层和有机半导体层之间，以与有机半导体层面对并接触。

    METHOD OF FORMING FINE PATTERN
    4.
    发明申请
    METHOD OF FORMING FINE PATTERN 审中-公开
    形成精细图案的方法

    公开(公告)号：US20090039563A1

    公开(公告)日：2009-02-12

    申请号：US12065246

    申请日：2006-08-25

    申请人： Motoki Okinaka ,  Kazuhito Tsukagoshi ,  Yoshinobu Aoyagi

    发明人： Motoki Okinaka ,  Kazuhito Tsukagoshi ,  Yoshinobu Aoyagi

    IPC分类号： B29C59/16

    CPC分类号： G03F7/0002 ,  B81C1/00031 ,  B81C1/00111 ,  B81C2201/0152 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/31 ,  H01L21/3121 ,  H01L21/316 ,  H01L21/76817

    摘要： A method of fine-pattern formation in which in forming a pattern, a fine pattern formed in a mold can be transferred to a pattering material in a short time at a low temperature and low pressure and, after the transfer of the fine pattern to the patterning material, the fine pattern formed in the patterning material does not readily deform. The method for fine-pattern formation comprises: a first step in which a mold having a fine structure with recesses/protrusions is pressed against a pattering material comprising a polysilane; a second step in which the patterning material is irradiated with ultraviolet to photooxidize the patterning material; a third in which the pressing of the mold against the patterning material is relieved and the mold is drawn from the pattering material; and a fourth step in which that surface of the patterning material to which the fine pattern has been transferred is irradiated with an oxygen plasma to oxidize the surface.

    摘要翻译： 精细图案形成方法在形成图案时，在模具中形成的精细图案可以在低温低压下在短时间内转印到图案材料，并且在精细图案转印到 图案形成材料中形成的微细图案不容易变形。 精细图案形成方法包括：第一步骤，其中具有凹陷/突起的精细结构的模具被压在包含聚硅烷的图案材料上; 第二步骤，其中图案形成材料被紫外线照射以对图案材料进行光氧化; 第三，其中将模具压靠在图案形成材料上被释放并且模具从图案材料中拉出; 以及第四步骤，其中已经转印有精细图案的图案形成材料的表面用氧等离子体照射以氧化该表面。

    METHOD OF FORMING MINUTE PATTERN
    5.
    发明申请
    METHOD OF FORMING MINUTE PATTERN 审中-公开
    形成分钟图案的方法

    公开(公告)号：US20080203620A1

    公开(公告)日：2008-08-28

    申请号：US11845618

    申请日：2007-08-27

    申请人： Motoki Okinaka ,  Kazuhito Tsukagoshi ,  Yoshinobu Aoyagi ,  Hiroshi Tsushima

    发明人： Motoki Okinaka ,  Kazuhito Tsukagoshi ,  Yoshinobu Aoyagi ,  Hiroshi Tsushima

    IPC分类号： B29C35/08

    CPC分类号： B29C35/0888 ,  B29C37/0053 ,  B29C2035/0827

    摘要： There is provided a method for forming minute patterns ranging from nanometer scale to micrometer scale with high aspect ratio at one time under a single condition of low temperature, low pressure, and a short period of time. A method of forming a minute pattern according to the present invention includes: applying, onto a substrate, a patterning material containing a polysilane and a silicone compound; pressing a mold on which a predetermined minute pattern has been formed to the patterning material which has been applied onto the substrate; irradiating energy rays from a side of the substrate while the mold is contacted by press with the patterning material; releasing the mold; and irradiating the patterning material with energy rays from a side to which the mold has been pressed.

    摘要翻译： 提供一种在低温，低压和短时间的单一条件下一次形成从纳米尺度到微米级的高纵横比的微小图案的方法。 根据本发明的形成微细图案的方法包括：在基材上涂布含有聚硅烷和硅氧烷化合物的图案形成材料; 将已经形成有预定的微小图案的模具按压到已经施加到基板上的图案形成材料上; 在模具与图案形成材料接触的同时，从基板侧照射能量射线; 释放模具; 并用能量射线照射图案形成材料，该能量射线从模具被按压的一侧。

    ELECTRONIC DEVICE AND METHOD FOR PRODUCING ELECTRONIC DEVICE
    6.
    发明申请
    ELECTRONIC DEVICE AND METHOD FOR PRODUCING ELECTRONIC DEVICE 失效
    电子设备和用于生产电子设备的方法

    公开(公告)号：US20090139752A1

    公开(公告)日：2009-06-04

    申请号：US12194106

    申请日：2008-08-19

    申请人： Hisao Miyazaki ,  Kazuhito Tsukagoshi ,  Syunsuke Odaka ,  Yoshinobu Aoyagi

    发明人： Hisao Miyazaki ,  Kazuhito Tsukagoshi ,  Syunsuke Odaka ,  Yoshinobu Aoyagi

    IPC分类号： H05K1/00 ,  B05D5/00

    CPC分类号： H01L29/78684 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/1606 ,  H01L29/4908 ,  H01L29/7781

    摘要： Provided is a novel electronic device that comprises graphite, graphene or the like.An electronic device having a substrate, a layer comprising a 6-member ring-structured carbon homologue as the main ingredient, a pair of electrodes, a layer comprising aluminium oxide as the main ingredient and disposed between the pair of electrodes, and a layer comprising aluminium as the main ingredient, wherein the layer comprising aluminium oxide as the main ingredient is disposed between the layer comprising a 6-member ring-structured carbon homologue as the main ingredient and the layer comprising aluminium as the main ingredient so as to be in contact with the two layers.

    摘要翻译： 提供了一种包括石墨，石墨烯等的新型电子器件。 具有基板的电子设备，以6元环结构的碳同系物为主要成分的层，一对电极，以氧化铝为主要成分并设置在该对电极之间的层，以及包含 铝作为主要成分，其中以氧化铝为主要成分的层设置在包含6元环结构的碳同系物作为主要成分的层和包含铝作为主要成分的层之间以便接触 与两层。

    METHOD OF MANUFACTURING A REPLICA MOLD AND A REPLICA MOLD
    7.
    发明申请
    METHOD OF MANUFACTURING A REPLICA MOLD AND A REPLICA MOLD 审中-公开
    制造复原模和复制模的方法

    公开(公告)号：US20080203271A1

    公开(公告)日：2008-08-28

    申请号：US11845621

    申请日：2007-08-27

    申请人： Motoki Okinaka ,  Kazuhito Tsukagoshi ,  Yoshinobu Aoyagi ,  Hiroshi Tsushima

    发明人： Motoki Okinaka ,  Kazuhito Tsukagoshi ,  Yoshinobu Aoyagi ,  Hiroshi Tsushima

    IPC分类号： B29C39/10 ,  B29C33/08 ,  B29C35/08

    CPC分类号： B29C33/3857 ,  B29C2035/0827 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

    摘要： There are provided a replica mold which is excellent in transferring a pattern of a master mold, and also has notably excellent hardness, transparency, heat resistance and chemical resistance, and a simple and inexpensive method of manufacturing the replica mold. A method of manufacturing a replica mold according to the present invention includes the steps of: applying, to a substrate, a replica mold material containing a polysilane and a silicone compound; pressing a master mold on which a predetermined minute pattern has been formed to the replica mold material which has been applied to the substrate; irradiating energy rays from a side of the substrate while the master mold is contacted by press with the replica mold material; releasing the master mold; and irradiating the replica mold material with energy rays from a side to which the master mold has been pressed.

    摘要翻译： 提供了转印母模图案的复制模具，并且还具有显着优异的硬度，透明度，耐热性和耐化学性，以及制造复制模具的简单且便宜的方法。 根据本发明的制造复制模具的方法包括以下步骤：向基材施加含有聚硅烷和硅氧烷化合物的复制模具材料; 将已经形成预定微小图案的母模按压到已经施加到基底的复制模具材料; 在母模与复制模具材料接触的同时，从基板的一侧照射能量射线; 释放主模具; 并从原模被压制的一侧向能量射线照射复制模具材料。

    Electronic device and method for producing electronic device
    8.
    发明授权
    Electronic device and method for producing electronic device 失效
    电子装置及其制造方法

    公开(公告)号：US08043978B2

    公开(公告)日：2011-10-25

    申请号：US12194106

    申请日：2008-08-19

    申请人： Hisao Miyazaki ,  Kazuhito Tsukagoshi ,  Syunsuke Odaka ,  Yoshinobu Aoyagi

    发明人： Hisao Miyazaki ,  Kazuhito Tsukagoshi ,  Syunsuke Odaka ,  Yoshinobu Aoyagi

    IPC分类号： H01L21/316 ,  H01L21/473

    CPC分类号： H01L29/78684 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/1606 ,  H01L29/4908 ,  H01L29/7781

    摘要： Provided is a novel electronic device that comprises graphite, graphene or the like.An electronic device having a substrate, a layer comprising a 6-member ring-structured carbon homologue as the main ingredient, a pair of electrodes, a layer comprising aluminium oxide as the main ingredient and disposed between the pair of electrodes, and a layer comprising aluminium as the main ingredient, wherein the layer comprising aluminium oxide as the main ingredient is disposed between the layer comprising a 6-member ring-structured carbon homologue as the main ingredient and the layer comprising aluminium as the main ingredient so as to be in contact with the two layers.

    摘要翻译： 提供了一种包括石墨，石墨烯等的新型电子器件。 具有基板的电子设备，以6元环结构的碳同系物为主要成分的层，一对电极，以氧化铝为主要成分并设置在该对电极之间的层，以及包含 铝作为主要成分，其中以氧化铝为主要成分的层设置在包含6元环结构的碳同系物作为主要成分的层和包含铝作为主要成分的层之间以便接触 与两层。

    THIN FILM SEMICONDUCTOR DEVICE FABRICATION METHOD AND THIN FILM SEMICONDUCTOR DEVICE
    9.
    发明申请
    THIN FILM SEMICONDUCTOR DEVICE FABRICATION METHOD AND THIN FILM SEMICONDUCTOR DEVICE 审中-公开
    薄膜半导体器件制造方法和薄膜半导体器件

    公开(公告)号：US20100078639A1

    公开(公告)日：2010-04-01

    申请号：US12523943

    申请日：2008-01-28

    申请人： Kazumasa Nomoto ,  Nobukazu Hirai ,  Ryoichi Yasuda ,  Takeo Minari ,  Kazuhito Tsukagoshi ,  Yoshinobu Aoyagi

    发明人： Kazumasa Nomoto ,  Nobukazu Hirai ,  Ryoichi Yasuda ,  Takeo Minari ,  Kazuhito Tsukagoshi ,  Yoshinobu Aoyagi

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L51/001 ,  H01L51/0516 ,  H01L51/0529 ,  H01L51/0545

    摘要： The present invention provides a method for making a thin film semiconductor device having a bottom-gate, bottom-contact-type thin film transistor structure finer in size with satisfactory characteristics, in which the interface between a gate insulating film and a thin film semiconductor layer can be maintained at satisfactory conditions without being affected by formation of source/drain electrodes. A first gate insulating film (7-1) covering a gate electrode (5) on a substrate (3) is formed, and a pair of source/drain electrodes (9) is formed on the first gate insulating film (7-1). Subsequently, a second gate insulating film (7-2) is selectively formed only on the first gate insulating film (7-2) exposed from the source/drain electrodes (9). Next, a thin film semiconductor layer (11) continuously covering from the source/drain electrodes (9) to the first gate insulating film (7-1) through the second gate insulating film (7-2) is formed while making contact with the source/drain electrodes (9). A method for making a thin film semiconductor device (1) is characterized as such.

    摘要翻译： 本发明提供一种制造薄膜半导体器件的方法，该薄膜半导体器件具有尺寸较小且具有令人满意的特性的底栅，底接触型薄膜晶体管结构，其中栅极绝缘膜和薄膜半导体层 可以在令人满意的条件下保持不受源/漏电极形成的影响。 形成覆盖基板（3）上的栅极（5）的第一栅极绝缘膜（7-1），在第一栅极绝缘膜（7-1）上形成有一对源极/漏极电极（9） 。 随后，仅在从源极/漏极（9）露出的第一栅极绝缘膜（7-2）上选择性地形成第二栅极绝缘膜（7-2）。 接下来，形成通过第二栅极绝缘膜（7-2）从源极/漏极（9）连续地覆盖到第一栅极绝缘膜（7-1）的薄膜半导体层（11），同时与 源极/漏极（9）。 制造薄膜半导体器件（1）的方法的特征如下。