摘要:
A focused ion beam apparatus having two pieces of probers brought into contact with two points of a surface of a sample, a voltage source for applying a constant voltage between the two points with which the probers are brought into contact, and an ammeter for measuring a current flowing between the two points, in which a conductive film is formed to narrow a gap thereof between the two points by operating a deflection electrode and a gas gun and the current flowing between the two points is monitored, and when the current becomes a predetermined value, a focused charged particle beam irradiated to the surface of the sample is made OFF by the blanking electrode.
摘要:
A focused ion beam apparatus having two pieces of probers brought into contact with two points of a surface of a sample, a voltage source for applying a constant voltage between the two points with which the probers are brought into contact, and an ammeter for measuring a current flowing between the two points, in which a conductive film is formed to narrow a gap thereof between the two points by operating a deflection electrode and a gas gun and the current flowing between the two points is monitored, and when the current becomes a predetermined value, a focused charged particle beam irradiated to the surface of the sample is made OFF by the blanking electrode.
摘要:
An electron microscope has a focused ion beam column positioned relative to an electron beam column so that the focused ion beam substantially perpendicularly intersects the electron beam. A backscattered electron detector is positioned relative to the focused ion beam column so that the direction normal to a detection plane of the backscattered electron detector is substantially perpendicular to the direction of the focused ion beam. The backscattered electron detector is configured and positioned to detect backscattered electrons released in a spread of at least about 70 degrees in width from the surface of the section by irradiation of the section with the electron beam 1a.
摘要:
A loader is provided, which is disposed in a low cleanliness room along a border between the low cleanliness room and a high cleanliness room, for transporting a dust free article between an inside of a container receiving the dust free article and the high cleanliness room, comprising a movable stage for mounting the container; an opening portion through which the dust free article is transported between the container and the high cleanliness room; a door for opening and closing the opening portion; a unifying means for unifying a cover of the container and the door when the container approaches the door; and a driving apparatus for moving the cover and the door unified within the loader to open and close the opening portion and the container.
摘要:
An electron microscope includes: an electron beam column for irradiating a specimen with an electron beam; a specimen stage that supports the specimen; a scattered electron detector for detected backscattered electrons released from the specimen; and a focused ion beam column for irradiating the specimen with a focused ion beam.
摘要:
A composite focused ion beam device includes a first ion beam irradiation system 10 including a liquid metallic ion source for generating a first ion, and a second ion beam irradiation system 20 including a gas field ion source for generating a second ion. A beam diameter of the second ion beam 20A emitted from the second ion beam irradiation system 20 is smaller than that of the first ion beam 10A emitted from the first ion beam irradiation system 1
摘要:
Detected is a secondary electron generated by irradiating a focused ion beam while performing etching a sample section and the around through scan-irradiating the focused ion beam. From a changing amount of the detected secondary electron signal an end-point detecting mechanism detects an end point to thereby terminate the etching, so that a center position of a defect or a contact hole is effectively detected even with an FIB apparatus not having a SEM observation function.
摘要:
The apparatus for working and observing samples comprises a sample plate on which a sample is to be placed; a first ion beam lens barrel capable of irradiating a first ion beam over a whole predetermined irradiation range at one time; a mask that can be arranged between the sample plate and the first ion beam lens barrel, and shields part of the first ion beam; mask-moving means capable of moving the mask; a charged particle beam lens barrel capable of scanning a focused beam of charged particles in the range irradiated with the first ion beam; and detection means capable of detecting a secondarily generated substance.
摘要:
An dermatological agent for external use is disclosed which contains a chromanol glycoside represented by the following general formula (1) (wherein R1, R2, R3, and R4 which may be the same or different, each represent a hydrogen atom or a lower alkyl group, R5 represents a hydrogen atom, a lower alkyl group, or a lower acyl group, X represents a monosaccharic residue or an oligosaccharic residue optionally having the hydrogen atom of the hydroxyl group in the saccharic residue substituted with a lower alkyl group or a lower acyl group, n represents an integer in the range of 0-6, and m represents an integer in the range of 1-6). This is a novel dermatological agent for external use which excels in stability and percutaneous absorbency, manifests an effective action safely at a small application rate, and effectively prevents and cures the dermopathy. It is very useful as an agent for preventing and curing the disorders caused by the ultraviolet light, an agent for preventing and allaying the sedimentation of pigment in the skin, an agent for beautifying the skin in white, an agent for preventing the senescence of the skin, an agent for activating cells, an agent for preventing and curing the dermopathy, and a cosmetic preparation.
摘要:
A thin film is etched by irradiating charged particles to a surface of the thin film. An etching time of the thin film is measured by observing a change in intensity of secondary charged particles emitted by etched portions of the thin film. A thickness of the thin film is calculated in accordance with the measured etching time.