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    Magnetic disk unit and manufacturing method of carriage structure thereof
    1.
    发明授权
    Magnetic disk unit and manufacturing method of carriage structure thereof 失效
    磁盘单元及其托架结构的制造方法

    公开(公告)号：US5301078A

    公开(公告)日：1994-04-05

    申请号：US713994

    申请日：1991-06-12

    申请人： Toshiaki Makino ,  Marutomo Goto ,  Hideyuki Kimura ,  Takashi Yamaguchi ,  Hiromu Hirai ,  Takashi Kono ,  Ryoji Okada ,  Toshihiro Yamada ,  Yasuhiro Yoshimura ,  Hideaki Amano ,  Akio Takatsuka ,  Toshio Matsushita ,  Satoru Yamaura ,  Yuichi Koizumi

    发明人： Toshiaki Makino ,  Marutomo Goto ,  Hideyuki Kimura ,  Takashi Yamaguchi ,  Hiromu Hirai ,  Takashi Kono ,  Ryoji Okada ,  Toshihiro Yamada ,  Yasuhiro Yoshimura ,  Hideaki Amano ,  Akio Takatsuka ,  Toshio Matsushita ,  Satoru Yamaura ,  Yuichi Koizumi

    IPC分类号： G11B5/48 ,  G11B21/16

    CPC分类号： G11B5/4813

    摘要： A magnetic disk unit comprising a one-piece carriage structure having a small thermal off-tracking amount, with the carriage structure including a rotary shaft; guide arms integrally supported on a guide-arm retainer at their proximal ends and extending independently and parallely; bearing retainers formed on both ends of the guide-arm retainer; and bearings fixed on the bearing retainers rotatably connecting the guide-arm retainer to the rotary shaft. A center line in a direction of thickness of the outermost guide arm is located outside of that of the bearing in a direction of height thereof, and a concave portion is continuously formed on the bearing retainer. Thermal coefficients of expansion of the guide arms and the guide-arm retainer are substantially equal, with the carriage structure being fashioned of an alloy mainly containing Al and Si, eutectic crystal Si particles in the guide arm and/or the guide-arm retainer. The average value of the longest eutectic crystal Si particles therein is 1.6 .mu.m or less or the number of the eutectic crystal Si particles if 5.0 or more per 100 .mu.m.sup.2. In the carriage of manufacturing the carriage of the carriage structure is heated for five to fifteen hours at a temperature of 300.degree. to 500.degree. C. after die casting.

    摘要翻译： 一种磁盘单元，包括具有小的热跟踪量小的单件托架结构，其中托架结构包括旋转轴; 引导臂在其近端处一体地支撑在引导臂保持器上并且独立且平行地延伸; 形成在引导臂保持器的两端的轴承保持器; 和固定在轴承保持器上的轴承，其将导向臂保持件可旋转地连接到旋转轴。 最外侧引导臂的厚度方向的中心线位于轴承的高度方向的外侧，在轴承保持架上连续地形成有凹部。 引导臂和引导臂保持器的热膨胀系数基本相等，托架结构由主要包含Al和Si的合金，共晶晶体Si颗粒在引导臂和/或引导臂保持器中形成。 其中最长的共晶晶体Si颗粒的平均值为1.6（my）m或更小，如果每100（m 2）m 2为5.0或更多，则共晶晶体Si颗粒的数量。 在制造的托架中，在铸造后，在300度至500度的温度下加热托架结构的托架5至15小时。

    Method for producing non-aqueous electrolyte secondary battery, non-aqueous electrolyte secondary battery, and method for producing negative electrode paste
    4.
    发明授权
    Method for producing non-aqueous electrolyte secondary battery, non-aqueous electrolyte secondary battery, and method for producing negative electrode paste 有权
    非水电解质二次电池的制造方法，非水电解质二次电池以及负极糊剂的制造方法

    公开(公告)号：US09231242B2

    公开(公告)日：2016-01-05

    申请号：US13927462

    申请日：2013-06-26

    申请人： Atsushi Sugihara ,  Takashi Kono ,  Tsubasa Matsuda ,  Naoyuki Wada ,  Shuji Tsutsumi ,  Tatsuya Hashimoto

    发明人： Atsushi Sugihara ,  Takashi Kono ,  Tsubasa Matsuda ,  Naoyuki Wada ,  Shuji Tsutsumi ,  Tatsuya Hashimoto

    IPC分类号： H01M4/04 ,  H01M4/1393 ,  H01M4/62

    CPC分类号： H01M4/04 ,  H01M4/1393 ,  H01M4/62 ,  Y02E60/122 ,  Y02P70/54

    摘要： A method for producing a non-aqueous electrolyte secondary battery includes: subjecting a mixture of a negative-electrode active material on which oil has been adsorbed, CMC and water to hard kneading to prepare a primary kneaded mixture; diluting the primary kneaded mixture with water to prepare a slurry; and adding a binder to the slurry. The method further includes defining an amount of the oil to a value equal to or more than 50 ml/100 g and equal to or less than 62 ml/100 g, wherein the amount of the oil is an amount at the time when the viscosity characteristics of the negative-electrode active material exhibits 70% of the maximum torque that is generated when the oil is titrated onto the negative-electrode active material. The 1% aqueous solution viscosity of the CMC is defined to a value equal to or more than 6000 mPa·s and equal to or less than 8000 mPa·s.

    摘要翻译： 一种非水电解质二次电池的制造方法，其特征在于，将具有吸附油的负极活性物质与CMC和水的混合物进行硬质混炼，制备初级混炼物; 用水稀释初级捏合混合物以制备浆料; 并向浆料中加入粘合剂。 该方法还包括将油的量定义为等于或大于50ml / 100g且等于或小于62ml / 100g的值，其中所述油的量是当粘度 负极活性物质的特性表现出当将油滴定在负极活性物质上时产生的最大扭矩的70％。 CMC的1％水溶液粘度定义为等于或大于6000mPa·s且等于或小于8000mPa·s的值。

    Image processing apparatus, image processing method, and computer-readable recording device
    5.
    发明授权
    Image processing apparatus, image processing method, and computer-readable recording device 有权
    图像处理装置，图像处理方法和计算机可读记录装置

    公开(公告)号：US08774521B2

    公开(公告)日：2014-07-08

    申请号：US13404470

    申请日：2012-02-24

    申请人： Yamato Kanda ,  Makoto Kitamura ,  Takashi Kono ,  Masashi Hirota

    发明人： Yamato Kanda ,  Makoto Kitamura ,  Takashi Kono ,  Masashi Hirota

    IPC分类号： G06K9/66 ,  G06T7/00

    CPC分类号： G06T7/0012 ,  G06T2207/20036 ,  G06T2207/30021 ,  G06T2207/30096

    摘要： An image processing apparatus includes an approximate-surface calculator that calculates multiple approximate surfaces that each approximate the pixel value of a pixel included in an examination-target region of an image; an approximate-surface selector that selects at least one approximate surface from the approximate surfaces on the basis of the relation between the pixel value of the pixel in the examination-target region and the approximate surfaces; an approximate-region setting unit that sets an approximate region that is approximated by at least the selected one approximate surface; and an abnormal-region detector that detects an abnormal region on the basis of the pixel value of a pixel in the approximate region and the value corresponding to the coordinates of that pixel on at least one approximate surface.

    摘要翻译： 一种图像处理装置，包括近似表面计算器，其计算出近似所述图像的检查对象区域中包含的像素的像素值的多个近似面; 基于检查对象区域中的像素的像素值与近似表面之间的关系，从近似表面选择至少一个近似表面的近似表面选择器; 近似区域设置单元，其设置至少所选择的一个近似表面近似的近似区域; 以及异常区域检测器，其基于近似区域中的像素的像素值检测异常区域，并且在至少一个近似表面上对应于该像素的坐标值。

    Method of writing to non-volatile semiconductor memory device storing information depending on variation in level of threshold voltage
    6.
    发明授权
    Method of writing to non-volatile semiconductor memory device storing information depending on variation in level of threshold voltage 有权
    写入根据阈值电压电平变化存储信息的非易失性半导体存储器件的方法

    公开(公告)号：US07376016B2

    公开(公告)日：2008-05-20

    申请号：US11488621

    申请日：2006-07-19

    申请人： Takeshi Kajimoto ,  Takeshi Nakayama ,  Shinichi Kobayashi ,  Takashi Kono

    发明人： Takeshi Kajimoto ,  Takeshi Nakayama ,  Shinichi Kobayashi ,  Takashi Kono

    IPC分类号： G11C11/34

    CPC分类号： G11C16/12 ,  G11C11/5628 ,  G11C16/3459

    摘要： In a flash memory, after an initial write operation ends, each bit line associated with a memory cell subjected to a write is precharged and each bit line associated with a memory cell that is not subjected to the write is discharged and verified to detect a memory cell low in threshold voltage and a memory cell thus detected is subjected to an additional write. The verification can be verified without being affected by a current flowing through the memory cell that is not subjected to the write. All memory cells can have their respective threshold voltages set accurately.

    摘要翻译： 在闪速存储器中，在初始写入操作结束后，与经过写入的存储器单元相关联的每个位线被预充电，并且与不经过写入的存储器单元相关联的每个位线被放电并被验证以检测存储器 小区阈值电压和这样检测的存储单元经受附加写入。 可以验证验证，而不受流过不经过写入的存储器单元的电流的影响。 所有存储单元可以准确地设置其各自的阈值电压。

    Non-volatile semiconductor memory device
    7.
    发明授权
    Non-volatile semiconductor memory device 有权
    非易失性半导体存储器件

    公开(公告)号：US07339833B2

    公开(公告)日：2008-03-04

    申请号：US11481782

    申请日：2006-07-07

    申请人： Yusuke Jono ,  Takashi Kono ,  Tadaaki Yamauchi

    发明人： Yusuke Jono ,  Takashi Kono ,  Tadaaki Yamauchi

    IPC分类号： G11C11/34

    CPC分类号： G11C11/5628 ,  G11C11/5642 ,  G11C16/0458 ,  G11C16/0491 ,  G11C16/10 ,  G11C16/3454 ,  G11C16/3459

    摘要： Using charges accumulated in a capacitance element connected to a drain side node of a memory cell, data is written in accordance with source side injection method. The capacitance value of the capacitance element is changed in accordance with the value of write data. A non-volatile semiconductor memory device allowing writing of multi-valued data at high speed with high precision is achieved.

    摘要翻译： 使用与连接到存储单元的漏极侧节点的电容元件中累积的电荷，根据源侧注入方式写入数据。 电容元件的电容值根据写入数据的值而变化。 实现了以高精度写入多值数据的非易失性半导体存储器件。

    Semiconductor memory device capable of operating at high speed and with low power consumption while ensuring reliability of memory cell
    9.
    发明授权
    Semiconductor memory device capable of operating at high speed and with low power consumption while ensuring reliability of memory cell 失效
    半导体存储器件能够在确保存储单元的可靠性的同时以高速和低功耗运行

    公开(公告)号：US07102953B2

    公开(公告)日：2006-09-05

    申请号：US11030185

    申请日：2005-01-07

    申请人： Takashi Kono ,  Hironori Iga

    发明人： Takashi Kono ,  Hironori Iga

    IPC分类号： G11C5/14

    CPC分类号： G11C29/021 ,  G11C5/147 ,  G11C11/401 ,  G11C11/4074 ,  G11C29/02 ,  G11C29/028 ,  G11C2029/5004 ,  G11C2207/2227

    摘要： A monitor circuit for monitoring external potential EXTVDD and variable delay circuit determine the time interval in which signal ZODACT is being at the L level according to the potential level of external potential EXTVDD, and thus the supplying time of external potential EXTVDD can be dynamically changed. When external potential EXTVDD is at the upper limit of specification of product, the supplying time is short, thereby preventing overcharge of memory cells or bit lines. When external potential EXTVDD is at the lower limit of specification of product, the supplying time becomes longer, thereby ensuring a sufficient over-driving time interval. It is possible to ensure the reliability of the memory cells and perform the reading operation throughout the entire range of the specification of product of external potential EXTVDD. Therefore, it is possible to provide a semiconductor memory device capable of performing a reading operation at high speeds while ensuring the reliability.

    摘要翻译： 用于监视外部电位EXTVDD和可变延迟电路的监视电路根据外部电位EXTVDD的电位电平确定信号ZODACT处于L电平的时间间隔，从而可以动态地改变外部电位EXTVDD的供电时间。 当外部电位EXTVDD处于产品规格的上限时，供电时间短，从而防止存储单元或位线的过充电。 当外部电位EXTVDD处于产品规格的下限时，供电时间变长，从而确保足够的过驱动时间间隔。 可以确保存储单元的可靠性，并在外部电位EXTVDD的产品规格的整个范围内执行读取操作。 因此，可以提供能够在确保可靠性的同时高速执行读取操作的半导体存储器件。

    Semiconductor memory device having a sub-amplifier configuration
    10.
    发明授权
    Semiconductor memory device having a sub-amplifier configuration 失效
    具有子放大器配置的半导体存储器件

    公开(公告)号：US06894940B2

    公开(公告)日：2005-05-17

    申请号：US10625588

    申请日：2003-07-24

    申请人： Takashi Kono ,  Takeshi Hamamoto

    发明人： Takashi Kono ,  Takeshi Hamamoto

    IPC分类号： H01L21/8242 ,  G11C11/409 ,  G11C11/4091 ,  G11C11/4097 ,  H01L27/108 ,  G11C7/00

    CPC分类号： G11C11/4097 ,  G11C11/4091 ,  G11C2207/002 ,  G11C2207/065

    摘要： A sense amplifier driving line is connected to the source of an N-channel MOS transistor. Accordingly, even if a control signal attains H level, a sub-amplifier will not operate. This is because the sense amplifier driving line and an LIO line pair both attain a precharge potential, and a gate-source voltage of an N-channel MOS transistor attains 0V. Thus, it is not necessary to add a circuit configuration for supplying a signal notifying of activation of a row block, and a semiconductor memory device with a smaller area is obtained.

    摘要翻译： 读出放大器驱动线连接到N沟道MOS晶体管的源极。 因此，即使控制信号达到H电平，子放大器也不会运行。 这是因为读出放大器驱动线和LIO线对都达到预充电电位，并且N沟道MOS晶体管的栅极 - 源极电压达到0V。 因此，不需要添加用于提供通知行块的激活的信号的电路配置，并且获得具有较小面积的半导体存储器件。