摘要:
A composition of raw materials comprising silicon carbide, a substance containing at least one of Group IVa to VIa elements except any boride thereof, and a substance containing boron except any of the borides of Group IVa to VIa elements, and further containing, if required, carbon, or an organic compound which produces carbon as a result of thermal decomposition, or both, is fired to manufacture a silicon carbide-based material in which a boride of at least one of the elements of Groups IVa to VIa of the periodic table is dispersed. The silicon carbide-based material can be manufactured without using any of the borides of Group IVa to VIa elements as a starting material.
摘要:
A high-toughness silicon carbide composite ceramic comprising silicon carbide, 5 to 50 vol % of graphite whiskers, and sintering aid, and a method for producing the composite ceramic. The composite ceramic has high-temperature strength and fracture toughness value, and also has electrical conductivity.
摘要:
A process for producing a metal boride sintered body having a density of at least 90% of the theoretical density and a raw material composition therefor. The raw material composition is composed of a metal oxide, a metal carbide, and boron carbide, the amount of boron carbide being 5 to 20% more than the amount stoichiometrically required to form a metal boride by reaction of boron in the boron carbide with the metal element(s) in the metal oxide and metal carbide. By using this composition, it is possible to produce a metal boride sintered body having high density and high hardness without adding a sintering auxiliary or carbon and using a very high pressure.
摘要:
A composite material comprises silicon carbide and a boride of at least one element of Groups IVa to VIa of the Periodic Table, at least a portion of the boride being in the form of fiber having an aspect ratio of 3 or above. The composite material has high toughness owing to the fibrous boride.The composite material is produced by molding a raw material mixture composed of silicon carbide, a substance containing at least one element of Groups IVa to VIa of the Periodic Table, at least a portion thereof being in the form of fiber having an aspect ratio of 3 or above, and a substance containing boron, and sintering the molded body.
摘要:
Grain oriented ceramics constituted of a polycrystalline body having a first perovskite-type alkali-pentavalent metal oxide compound as the main phase, in which a specific crystal plane of each grain constituting the polycrystalline body is oriented. The grain oriented ceramics are obtained by molding a mixture of a first anisotropically-shaped powder A of which developed plane has a lattice matching with a specific crystal plane of the first perovskite-type alkali-pentavalent metal oxide compound and a first reaction material capable of reacting with the first anisotropically-shaped powder A thereby forming at least the first perovskite-type alkali-pentavalent metal oxide compound such that the first anisotropically-shaped powder A is oriented, and by heating them.
摘要:
Air-accumulating chamber of a roof air duct has a non-branched configuration and is located substantially centrally in a widthwise direction of a vehicle. Air emission port sections emit conditioned air from the air-accumulating chamber toward respective rear seats. In each of the air emission port sections, a sawtooth-like surface is formed on each port base member and a resilient locking protrusion is provided on a grill for meshing engagement with the sawtooth-like surface. Air emission port, air-conditioner operating section and room lamp are provided together as a unit on the port base member.
摘要:
In a method of producing single crystals on a seed crystal, the seed crystal is covered by a protection layer except for a surface on which the single crystals are to be formed. The protection layer is made of material such as carbon or the like, which is stable in a step of forming the single crystals. As a result, a temperature gradient and mass transfer in the seed crystal can be prevented, whereby quality of the single crystals formed on the seed crystal can be improved.
摘要:
A portion 12a of a side duct 12 which is closer to a quarter glass 61 is formed into a convex cross-sectional portion protruding outwardly of the duct 12, and a rear garnish 63 is wrapped around the convex cross-sectional portion, whereby an end portion 63b of the rear garnish 63 which is closer to a quarter glass 61 is made closer to a rear pillar 62.
摘要:
Micropipe defects existing in a silicon carbide single crystal are closed within the single crystal. At least a portion of the micropipe defects opened on the surface of the silicon carbide single crystal (SiC substrate) is sealed up with a coating material. Then heat treatment is performed so as to saturate the inside of the micropipe defects with silicon carbide vapors. By this, the micropipe defects existing in the SiC substrate can be closed within the SiC substrate, not in a newly grown layer. Further, the micropipe defects can be efficiently closed by filling the micropipe defects with a silicon carbide material by preliminarily using super critical fluid and the like.
摘要:
A crystal-oriented ceramic has an isotropic or pseudoisotropic perovskite-type-structure of not smaller than 10% in Lotgering orientation degree. The ceramic may contain at least one of Bi, Sr and Ca. A host material, a raw material capable of producing a guest material and an additive having the ability of converting a host material into a guest material are mixed and roll-pressed, and sintered under heat to give the crystal-oriented ceramic as a large-sized and bulky material. This crystal-oriented ceramic has good crystal orientation-dependent characteristics including piezoelectricity, pyroelectricity, ionic conductivity, giant magneto-resistivity effect, etc. This crystal-oriented ceramic can be produced by orienting epitaxially the polycrystals of an isotropic or pseudoisotropic perovskite oxide according to the orientation of the crystal plane or axis of a host material. The ceramic can be applied to an inexpensive and large-sized device. The host material may be a magnetoplumbite-type-structured or Sr.sub.2 Nb.sub.2 O.sub.7 -type-structured material, and may be composed of morphologically-anisotropic grains.