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公开(公告)号：US08371008B2
公开(公告)日：2013-02-12
申请号：US12419709
申请日：2009-04-07
IPC分类号： B21D39/04
CPC分类号： B22D19/0009 , B22D17/24 , Y10T29/53987
摘要： An apparatus holds a plurality of hollow cylindrical members and pushes off the hollow cylindrical members. The apparatus includes a holder shaft for holding the hollow cylindrical members in tandem thereon, a gripper member projecting outwardly from a side wall surface of the holder shaft and engaging an inner wall surface of a foremost one of the hollow cylindrical members, a cam disposed in the holder shaft for displacing the gripper member, a pusher cylinder for pressing an end face of a rearmost one of the hollow cylindrical members and moving all the hollow cylindrical members forward, to release the foremost one of the hollow cylindrical members from the holder shaft and position a next one of the hollow cylindrical members as a new foremost one of the hollow cylindrical members, and a turning cylinder for turning the holder shaft.
摘要翻译： 一种装置保持多个中空圆柱形构件并推动中空圆柱形构件。 该装置包括一个夹持轴，用于将中空圆柱形构件串联在其上，夹持构件从保持器轴的侧壁表面向外突出并与最前面的一个中空圆柱形构件的内壁表面接合;凸轮， 用于移动夹持构件的保持器轴，用于按压最后面一个中空圆柱形构件的端面的推动器缸，并将所有中空圆柱形构件向前移动，以从保持器轴中释放最前面的一个中空圆柱形构件， 将下一个中空圆柱形构件定位为中空圆柱形构件中的新的最前面的一个，以及用于转动保持器轴的转动缸。
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公开(公告)号：US20090260208A1
公开(公告)日：2009-10-22
申请号：US12419709
申请日：2009-04-07
IPC分类号： B21D39/06
CPC分类号： B22D19/0009 , B22D17/24 , Y10T29/53987
摘要： An apparatus holds a plurality of hollow cylindrical members and pushes off the hollow cylindrical members. The apparatus includes a holder shaft for holding the hollow cylindrical members in tandem thereon, a gripper member projecting outwardly from a side wall surface of the holder shaft and engaging an inner wall surface of a foremost one of the hollow cylindrical members, a cam disposed in the holder shaft for displacing the gripper member, a pusher cylinder for pressing an end face of a rearmost one of the hollow cylindrical members and moving all the hollow cylindrical members forward, to release the foremost one of the hollow cylindrical members from the holder shaft and position a next one of the hollow cylindrical members as a new foremost one of the hollow cylindrical members, and a turning cylinder for turning the holder shaft.
摘要翻译： 一种装置保持多个中空圆柱形构件并推动中空圆柱形构件。 该装置包括一个夹持轴，用于将中空圆柱形构件串联在其上，夹持构件从保持器轴的侧壁表面向外突出并与最前面的一个中空圆柱形构件的内壁表面接合;凸轮， 用于移动夹持构件的保持器轴，用于按压最后面一个中空圆柱形构件的端面的推动器缸，并将所有中空圆柱形构件向前移动，以从保持器轴中释放最前面的一个中空圆柱形构件， 将下一个中空圆柱形构件定位为中空圆柱形构件中的新的最前面的一个，以及用于转动保持器轴的转动缸。
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公开(公告)号：US20050041712A1
公开(公告)日：2005-02-24
申请号：US10495865
申请日：2003-09-19
申请人： Yoshifumi Sato , Daisuke Imanishi
发明人： Yoshifumi Sato , Daisuke Imanishi
CPC分类号： H01S5/3013 , B82Y20/00 , H01S5/0421 , H01S5/22 , H01S5/2214 , H01S5/2216 , H01S5/32325 , H01S5/3425 , H01S5/343 , H01S5/3436
摘要： This provides a semiconductor laser device of a high light output efficiency, which is high in current confinement effect, small in leak current, and favorable in temperature property, and indicates a low threshold current, and can effectively confine laser light to a stripe region, and is favorable in beam profile. This semiconductor laser device (100) includes the laminated structure of an n-AlInP clad layer (103) a superlattice active layer section (104), a p-AlInP first clad layer (105), a GaInP etching stop layer (106) are formed, and on top of that, there are a p-AlInP second clad layer (107), a GaInP protective layer (108) and a p-GaAs contact layer (109), which are processed into a stripe-shaped ridge. A p-side electrode (111) is directly coated and formed on the etching stop layer of ridge top surface, ridge sides and ridge flanks since s the superlattice active layer section is sandwiched between the n-AlInP clad layer and the p-AlInP first clad layer, an energy band gap difference from the active layer section becomes greater.
摘要翻译： 这提供了一种具有高的电流限制效应，漏电流小，温度特性好的高光输出效率的半导体激光器件，并且表示低阈值电流，并且可以有效地将激光限制在条纹区域， 并且在梁剖面中是有利的。 该半导体激光器件（100）包括n-AlInP覆盖层（103），超晶格有源层部分（104），p-AlInP第一覆盖层（105），GaInP蚀刻停止层（106）的叠层结构 形成，并且还有一个被加工成条状脊的p-AlInP第二包层（107），GaInP保护层（108）和p-GaAs接触层（109）。 p侧电极（111）直接涂覆并形成在脊顶表面，脊侧和脊脊的蚀刻停止层上，因为超晶格有源层部分夹在n-AlInP包层和p-AlInP第一 与有源层部分的能带隙差变大。
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公开(公告)号：US07693199B2
公开(公告)日：2010-04-06
申请号：US12049884
申请日：2008-03-17
IPC分类号： H01S5/00
CPC分类号： H01S5/34326 , B82Y20/00 , H01S5/02272 , H01S5/024 , H01S5/2009 , H01S5/22 , H01S5/3201
摘要： A laser diode capable of operating at high temperature by preventing carrier overflow is provided. A laser diode includes an AlGaInP-based laminate configuration including at least a lower cladding layer, an active layer and an upper cladding layer in this order, wherein the AlGaInP-based laminate configuration receives a larger compressive stress than 2200 ppm from a stress source.
摘要翻译： 提供能够通过防止载流子溢出而在高温下运行的激光二极管。 激光二极管包括依次包括至少下包层，有源层和上包层的AlGaInP基层压结构，其中AlGaInP基层压结构从应力源接收比2200ppm更大的压应力。
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公开(公告)号：US20060007975A1
公开(公告)日：2006-01-12
申请号：US11175561
申请日：2005-07-06
申请人： Shoji Hirata , Daisuke Imanishi
发明人： Shoji Hirata , Daisuke Imanishi
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , G11B7/127 , H01S5/024 , H01S5/0655 , H01S5/204 , H01S5/3054 , H01S5/3211 , H01S5/3213 , H01S5/32325
摘要： A laser diode capable of inhibiting overflow of electrons in a p-type cladding layer and improving temperature characteristics and light emitting efficiency is provided. A laser diode at least comprises: an n-type cladding layer; an active layer; and a p-type cladding layer, which are made of an AlGaInP compound semiconductor material and formed in this order on a substrate. A thickness of the p-type cladding layer is 0.7 μm or less.
摘要翻译： 提供能够抑制p型包层中的电子溢出并提高温度特性和发光效率的激光二极管。 激光二极管至少包括：n型包层; 活性层 以及由AlGaInP化合物半导体材料制成并依次形成在基板上的p型覆层。 p型包覆层的厚度为0.7μm以下。
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公开(公告)号：US20090023240A1
公开(公告)日：2009-01-22
申请号：US12232047
申请日：2008-09-10
申请人： Yoshifumi Sato , Daisuke Imanishi
发明人： Yoshifumi Sato , Daisuke Imanishi
IPC分类号： H01L21/02
CPC分类号： H01S5/3013 , B82Y20/00 , H01S5/0421 , H01S5/22 , H01S5/2214 , H01S5/2216 , H01S5/32325 , H01S5/3425 , H01S5/343 , H01S5/3436
摘要： This provides a semiconductor laser device of a high light output efficiency, which is high in current confinement effect, small in leak current, and favorable in temperature property, and indicates a low threshold current, and can effectively confine laser light to a stripe region, and is favorable in beam profile.This semiconductor laser device (100) includes the laminated structure of an n-AlInP clad layer (103), a superlattice active layer section (104), a p-AlInP first clad layer (105), a GaInP etching stop layer (106) are formed, and on top of that, there are a p-AlInP second clad layer (107), a GaInP protective layer (108) and a p-GaAs contact layer (109), which are processed into a stripe-shaped ridge. A p-side electrode (111) is directly coated and formed on the etching stop layer of ridge top surface, ridge sides and ridge flanks since s the superlattice active layer section is sandwiched between the n-AlInP clad layer and the p-AlInP first clad layer, an energy band gap difference from the active layer section becomes greater.
摘要翻译： 这提供了一种具有高的电流限制效应，漏电流小，温度特性好的高光输出效率的半导体激光器件，并且表示低阈值电流，并且可以有效地将激光限制在条纹区域， 并且在梁剖面中是有利的。 该半导体激光器件（100）包括n-AlInP覆盖层（103），超晶格有源层部分（104），p-AlInP第一覆盖层（105），GaInP蚀刻停止层（106） ，并且还有一个被加工成条状脊的p-AlInP第二包层（107），GaInP保护层（108）和p-GaAs接触层（109）。 p侧电极（111）直接涂覆并形成在脊顶表面，脊侧和脊脊的蚀刻停止层上，因为超晶格有源层部分夹在n-AlInP包层和p-AlInP第一 与有源层部分的能带隙差变大。
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公开(公告)号：US20080232415A1
公开(公告)日：2008-09-25
申请号：US12049884
申请日：2008-03-17
IPC分类号： H01S5/10
CPC分类号： H01S5/34326 , B82Y20/00 , H01S5/02272 , H01S5/024 , H01S5/2009 , H01S5/22 , H01S5/3201
摘要： A laser diode capable of operating at high temperature by preventing carrier overflow is provided. A laser diode includes an AlGaInP-based laminate configuration including at least a lower cladding layer, an active layer and an upper cladding layer in this order, wherein the AlGaInP-based laminate configuration receives a larger compressive stress than 2200 ppm from a stress source.
摘要翻译： 提供能够通过防止载流子溢出而在高温下运行的激光二极管。 激光二极管包括依次包括至少下包层，有源层和上包层的AlGaInP基层压结构，其中AlGaInP基层压结构从应力源接收比2200ppm更大的压应力。
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8.发明授权Semiconductor laser which has a (100) top surface and a stripe ridge which extends in the horizontal <01-1> axis direction and has side wall surfaces (110) and a triangular region between (111) faces 失效具有（100）顶表面和条脊的半导体激光器，其沿水平方向（01-1）轴向延伸并且具有侧壁表面（110）和在（111）面之间的三角形区域
公开(公告)号：US5383215A
公开(公告)日：1995-01-17
申请号：US103799
申请日：1993-08-10
申请人： Hironobu Narui , Daisuke Imanishi
发明人： Hironobu Narui , Daisuke Imanishi
CPC分类号： H01S5/227 , H01S5/2206 , H01S5/32316
摘要： An SDH semiconductor laser has a semiconductor substrate which is (100) oriented and has a stripe ridge thereon, first and second cladding layers disposed on stripe ridge, an active layer sandwiched between the first and second cladding layers, and an electrode held in electric contact with the first and second cladding layers and the active layer. The stripe ridge extends in a axis direction, and the first and second cladding layers and the active layer jointly provide a semiconductor stripe region of triangular cross section sandwiched between (111) A faces. A method of manufacturing the SDH semiconductor laser is also disclosed.
摘要翻译： SDH半导体激光器具有（100）取向并具有条纹脊的半导体基板，设置在条纹脊上的第一和第二包层，夹在第一和第二包层之间的有源层和保持电接触的电极 与第一和第二包层和有源层。 条纹脊沿<01-1>轴方向延伸，并且第一和第二包层和有源层共同提供夹在（111）A面之间的三角形横截面的半导体条纹区域。 还公开了一种制造SDH半导体激光器的方法。
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公开(公告)号：US08175128B2
公开(公告)日：2012-05-08
申请号：US12657451
申请日：2010-01-21
申请人： Daisuke Imanishi
发明人： Daisuke Imanishi
IPC分类号： H01S5/00
CPC分类号： H01S5/2232 , B82Y20/00 , H01S5/02272 , H01S5/02276 , H01S5/0425 , H01S5/18311 , H01S5/18327 , H01S5/18341 , H01S5/22 , H01S5/34326 , H01S5/4031
摘要： A semiconductor laser element is provided which includes a first semiconductor layer, an active layer having a current injection region, a second semiconductor layer, a third semiconductor layer, and an electrode for injecting a current into the active layer. In the semiconductor laser element, the first semiconductor layer, the active layer, the second semiconductor layer, and the third semiconductor layer are laminated in that order on a substrate, the first semiconductor layer has a current constriction layer which constricts the current injection region of the active layer, the third semiconductor layer is formed on an upper surface of the second semiconductor layer in a region corresponding to the current injection region of the active layer, and the electrode is formed on the upper surface of the second semiconductor layer in a region other than that of the third semiconductor layer.
摘要翻译： 提供一种半导体激光元件，其包括第一半导体层，具有电流注入区的有源层，第二半导体层，第三半导体层以及用于向有源层注入电流的电极。 在半导体激光元件中，第一半导体层，有源层，第二半导体层和第三半导体层依次层叠在基板上，第一半导体层具有限制电流注入区域的电流收缩层 有源层，第三半导体层在与有源层的电流注入区对应的区域中形成在第二半导体层的上表面上，并且电极形成在第二半导体层的上表面的区域 除了第三半导体层的以外。
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公开(公告)号：US20100183041A1
公开(公告)日：2010-07-22
申请号：US12657451
申请日：2010-01-21
申请人： Daisuke Imanishi
发明人： Daisuke Imanishi
CPC分类号： H01S5/2232 , B82Y20/00 , H01S5/02272 , H01S5/02276 , H01S5/0425 , H01S5/18311 , H01S5/18327 , H01S5/18341 , H01S5/22 , H01S5/34326 , H01S5/4031
摘要： A semiconductor laser element is provided which includes a first semiconductor layer, an active layer having a current injection region, a second semiconductor layer, a third semiconductor layer, and an electrode for injecting a current into the active layer. In the semiconductor laser element, the first semiconductor layer, the active layer, the second semiconductor layer, and the third semiconductor layer are laminated in that order on a substrate, the first semiconductor layer has a current constriction layer which constricts the current injection region of the active layer, the third semiconductor layer is formed on an upper surface of the second semiconductor layer in a region corresponding to the current injection region of the active layer, and the electrode is formed on the upper surface of the second semiconductor layer in a region other than that of the third semiconductor layer.
摘要翻译： 提供一种半导体激光元件，其包括第一半导体层，具有电流注入区的有源层，第二半导体层，第三半导体层以及用于向有源层注入电流的电极。 在半导体激光元件中，第一半导体层，有源层，第二半导体层和第三半导体层依次层叠在基板上，第一半导体层具有限制电流注入区域的电流收缩层 有源层，第三半导体层在与有源层的电流注入区对应的区域中形成在第二半导体层的上表面上，并且电极形成在第二半导体层的上表面的区域 除了第三半导体层的以外。
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