公开(公告)号：US20100200120A1

公开(公告)日：2010-08-12

申请号：US12656459

申请日：2010-01-29

申请人： Toshio Horie ,  Gaku Kitahara ,  Nobuaki Suzuki ,  Fumio Shimizu ,  Takao Kobayashi ,  Ken-ichi Suzuki ,  Shigeki Oshima

发明人： Toshio Horie ,  Gaku Kitahara ,  Nobuaki Suzuki ,  Fumio Shimizu ,  Takao Kobayashi ,  Ken-ichi Suzuki ,  Shigeki Oshima

IPC分类号： C23C8/24 ,  B32B9/00 ,  H01B1/02

CPC分类号： H01B1/02 ,  C23C18/165 ,  C23C18/1689 ,  C23C18/1696 ,  C23C18/36 ,  C23C30/00

摘要： A conductive film comprises a phosphide particle coated film formed by attaching raw material particles including phosphide particles comprising a compound of Ti and/or Fe, and P to a surface of a substrate material. This conductive film exhibits good corrosion resistant conductivity, and can be easily formed at low costs because of comprising the phosphide particle coated film. A corrosion-resistant conduction film comprises an iron-containing titanium phosphide layer containing Ti, Fe and P as essential basic elements. A corrosion-resistant conduction material having this corrosion-resistant conduction film on a surface of a substrate exhibits good corrosion resistance or conductivity. This corrosion-resistant conduction material can be obtained, for example, by a process comprising a plating step of forming an Ni plating layer on a surface of a Ti-based material substrate and a nitriding step of applying nitriding treatment to the Ti-based material substrate after the plating step at not more than 880 deg. C.

摘要翻译： 导电膜包括通过将包含Ti和/或Fe化合物的磷化物颗粒和P的原料颗粒附着到基材的表面而形成的磷化物颗粒涂布膜。 该导电膜表现出良好的耐腐蚀性导电性，并且由于包含磷化物粒子涂布膜，可以以低成本容易地形成。 耐腐蚀导电膜包括含有Ti，Fe和P作为必需碱性元素的含铁磷化钛层。 在基板表面具有这种耐腐蚀导电膜的耐腐蚀导电材料表现出良好的耐腐蚀性或导电性。 该耐腐蚀导电材料可以通过例如在Ti基材料基板的表面上形成Ni镀层的镀覆工序和对Ti系材料进行氮化处理的氮化工序 电镀步骤后的基板不大于880度。 C。

公开(公告)号：US08613807B2

公开(公告)日：2013-12-24

申请号：US12656459

申请日：2010-01-29

申请人： Toshio Horie ,  Gaku Kitahara ,  Nobuaki Suzuki ,  Fumio Shimizu ,  Takao Kobayashi ,  Ken-ichi Suzuki ,  Shigeki Oshima

发明人： Toshio Horie ,  Gaku Kitahara ,  Nobuaki Suzuki ,  Fumio Shimizu ,  Takao Kobayashi ,  Ken-ichi Suzuki ,  Shigeki Oshima

IPC分类号： C23C8/00 ,  B32B9/00 ,  H01B1/02

CPC分类号： H01B1/02 ,  C23C18/165 ,  C23C18/1689 ,  C23C18/1696 ,  C23C18/36 ,  C23C30/00

摘要： A conductive film comprises a phosphide particle coated film formed by attaching raw material particles including phosphide particles comprising a compound of Ti and/or Fe, and P to a surface of a substrate material. This conductive film exhibits good corrosion resistant conductivity, and can be easily formed at low costs because of comprising the phosphide particle coated film. A corrosion-resistant conduction film comprises an iron-containing titanium phosphide layer containing Ti, Fe and P as essential basic elements. A corrosion-resistant conduction material having this corrosion-resistant conduction film on a surface of a substrate exhibits good corrosion resistance or conductivity. This corrosion-resistant conduction material can be obtained, for example, by a process comprising a plating step of forming an Ni plating layer on a surface of a Ti-based material substrate and a nitriding step of applying nitriding treatment to the Ti-based material substrate after the plating step at not more than 880 deg. C.

摘要翻译： 导电膜包括通过将包含Ti和/或Fe化合物的磷化物颗粒和P的原料颗粒附着到基材的表面而形成的磷化物颗粒涂布膜。 该导电膜表现出良好的耐腐蚀性导电性，并且由于包含磷化物粒子涂布膜，可以以低成本容易地形成。 耐腐蚀导电膜包括含有Ti，Fe和P作为必需碱性元素的含铁磷化钛层。 在基板表面具有这种耐腐蚀导电膜的耐腐蚀导电材料表现出良好的耐腐蚀性或导电性。 该耐腐蚀导电材料可以通过例如在Ti基材料基板的表面上形成Ni镀层的镀覆工序和对Ti系材料进行氮化处理的氮化工序 电镀步骤后的基板不大于880度。 C。

公开(公告)号：US08241530B2

公开(公告)日：2012-08-14

申请号：US12299491

申请日：2007-05-18

申请人： Toshio Horie ,  Gaku Kitahara ,  Nobuaki Suzuki ,  Hiroyuki Mori ,  Ken-ichi Suzuki ,  Isamu Ueda ,  Kazuaki Nishino

发明人： Toshio Horie ,  Gaku Kitahara ,  Nobuaki Suzuki ,  Hiroyuki Mori ,  Ken-ichi Suzuki ,  Isamu Ueda ,  Kazuaki Nishino

IPC分类号： H01B1/04 ,  C23C8/72 ,  B05D5/12

CPC分类号： H01M8/0215 ,  C22C14/00 ,  C23C4/10 ,  C23C4/18 ,  C23C8/42 ,  C23C8/80 ,  H01M8/0206 ,  H01M8/0228 ,  Y02P70/56

摘要： There is provided an electron conductive and corrosion-resistant material 3 containing titanium (Ti), boron (B) and nitrogen (N) in an atomic ratio satisfying 0.05≦[Ti]≦0.40, 0.20≦[B]≦0.40, and 0.35≦[N]≦0.55 (provided that [Ti]+[B]+[N]=1). Further, there is provided a method of manufacturing an electron conductive and corrosion-resistant material 3, wherein boron nitride powder adheres to the surface of a substrate 2 of which at least the surface is made of titanium or a titanium alloy, and is then heated. Furthermore, there is provided a method of manufacturing an electron conductive and corrosion-resistant material 3, wherein the surface of a substrate 2 of which at least the surface is made of titanium or a titanium alloy is borided and then heated. In addition, there is provided a method of manufacturing an electron conductive and corrosion-resistant material 3, wherein a TiB2 layer formed of TiB2 particles is formed by spraying TiB2 powder onto a metal substrate 2 and then nitriding the TiB2 layer.

摘要翻译： 提供了含有钛（Ti），硼（B）和氮（N）的电子导电和耐腐蚀材料3，原子比满足0.05＆nlE; [Ti]＆nlE; 0.40,0.20＆lt; 1; [B]＆nlE; 0.40和0.35＆nlE; [N]＆nlE; 0.55（条件是[Ti] + [B] + [N] = 1）。 此外，提供了一种制造电子传导和耐腐蚀材料3的方法，其中氮化硼粉末粘附到至少表面由钛或钛合金制成的基底2的表面，然后被加热 。 此外，提供一种制造电子传导和耐腐蚀材料3的方法，其中至少将表面由钛或钛合金制成的基板2的表面被硼化然后被加热。 此外，提供了一种制造电子传导和耐腐蚀材料3的方法，其中由TiB 2颗粒形成的TiB 2层通过将TiB 2粉末喷涂到金属基底2上然后氮化TiB 2层而形成。

公开(公告)号：US20090202736A1

公开(公告)日：2009-08-13

申请号：US12299491

申请日：2007-05-18

申请人： Toshio Horie ,  Gaku Kitahara ,  Nobuaki Suzuki ,  Hiroyuki Mori ,  Ken-ichi Suzuki ,  Isamu Ueda ,  Kazuaki Nishino

发明人： Toshio Horie ,  Gaku Kitahara ,  Nobuaki Suzuki ,  Hiroyuki Mori ,  Ken-ichi Suzuki ,  Isamu Ueda ,  Kazuaki Nishino

IPC分类号： C23C4/06 ,  H01B1/22 ,  B05D5/12

CPC分类号： H01M8/0215 ,  C22C14/00 ,  C23C4/10 ,  C23C4/18 ,  C23C8/42 ,  C23C8/80 ,  H01M8/0206 ,  H01M8/0228 ,  Y02P70/56

摘要： There is provided an electron conductive and corrosion-resistant material 3 containing titanium (Ti), boron (B) and nitrogen (N) in an atomic ratio satisfying 0.05≦[Ti]≦0.40, 0.20≦[B]≦0.40, and 0.35≦[N]≦0.55 (provided that [Ti]+[B]+[N]=1). Further, there is provided a method of manufacturing an electron conductive and corrosion-resistant material 3, wherein boron nitride powder adheres to the surface of a substrate 2 of which at least the surface is made of titanium or a titanium alloy, and is then heated. Furthermore, there is provided a method of manufacturing an electron conductive and corrosion-resistant material 3, wherein the surface of a substrate 2 of which at least the surface is made of titanium or a titanium alloy is borided and then heated. In addition, there is provided a method of manufacturing an electron conductive and corrosion-resistant material 3, wherein a TiB2 layer formed of TiB2 particles is formed by spraying TiB2 powder onto a metal substrate 2 and then nitriding the TiB2 layer.

摘要翻译： 提供了含有钛（Ti），硼（B）和氮（N）的电子导电耐腐蚀材料3，原子比满足0.05 <= [Ti] <= 0.40,0.20 [= [B] 0.40和0.35 <= [N] <= 0.55（条件是[Ti] + [B] + [N] = 1）。 此外，提供了一种制造电子传导和耐腐蚀材料3的方法，其中氮化硼粉末粘附到至少表面由钛或钛合金制成的基底2的表面，然后被加热 。 此外，提供一种制造电子传导和耐腐蚀材料3的方法，其中至少将表面由钛或钛合金制成的基板2的表面被硼化然后被加热。 此外，提供了一种制造电子传导和耐腐蚀材料3的方法，其中由TiB 2颗粒形成的TiB 2层通过将TiB 2粉末喷涂到金属基底2上然后氮化TiB 2层而形成。

公开(公告)号：US09635303B2

公开(公告)日：2017-04-25

申请号：US13584376

申请日：2012-08-13

申请人： Nobuaki Suzuki ,  Makoto Sato ,  Masahiko Mawatari

发明人： Nobuaki Suzuki ,  Makoto Sato ,  Masahiko Mawatari

IPC分类号： H04N5/38 ,  G06F3/14 ,  G09G5/00 ,  H04N5/765 ,  H04N13/00 ,  H04N21/41 ,  H04N21/436 ,  H04N21/4363

CPC分类号： H04N5/38 ,  G06F3/14 ,  G09G5/006 ,  G09G2350/00 ,  G09G2370/12 ,  H04N5/765 ,  H04N13/189 ,  H04N21/4122 ,  H04N21/43622 ,  H04N21/43635

摘要： One embodiment provides a communication device for transmitting a video to an external device through first to third transmission lines, the communication device including: a transmission module configured to transmit first color difference information and second color difference information concerned with adjacent two pixels through the first transmission line, to transmit first luminance information concerned with one of the two pixels through the second transmission line, and to transmit second luminance information concerned with the other of the two pixels through the third transmission line.

公开(公告)号：US20130101426A1

公开(公告)日：2013-04-25

申请号：US13807127

申请日：2012-01-25

申请人： Hitoshi Saitou ,  Takato Nakamura ,  Nobuaki Suzuki

发明人： Hitoshi Saitou ,  Takato Nakamura ,  Nobuaki Suzuki

IPC分类号： F03D1/06

CPC分类号： F03D1/0675 ,  F05B2230/90 ,  F05B2280/702 ,  Y02E10/721 ,  Y02E10/726 ,  Y02P70/523

摘要： A scratch-resistant blade such as an FRP wind turbine blade and a blade protective sheet which can be easily repaired when scratched. A blade is provided with a laminated protective sheet bonded to at least part of a leading edge of an FRP blade body of said blade, wherein the laminated protective sheet comprises an adhesive layer, a intermediate fabric layer and a durable surface layer, in that order from the blade body.

摘要翻译： FRP风力涡轮机叶片等刮伤刀片和刮伤时易于维修的刀片保护片。 叶片设置有粘合到所述叶片的FRP叶片体的前缘的至少一部分的层压保护片，其中所述层压保护片按顺序包括粘合剂层，中间织物层和耐用的表面层 从刀片体。

公开(公告)号：US07843953B2

公开(公告)日：2010-11-30

申请号：US11641682

申请日：2006-12-20

申请人： Yuichi Kawata ,  Nobuaki Suzuki ,  Makoto Kimura ,  Kenichi Takahashi ,  Seishiro Kato

发明人： Yuichi Kawata ,  Nobuaki Suzuki ,  Makoto Kimura ,  Kenichi Takahashi ,  Seishiro Kato

IPC分类号： H04L12/28 ,  G06F1/26 ,  G06F1/32

CPC分类号： H04L12/4625 ,  G03G15/5004

摘要： A network control device that has a packet filtering unit for implementing packet filtering based on prescribed information in a header of a received packet, which includes: a position designating unit that designates a prescribed comparison position in a higher level protocol header to the header of the received packet; and an additional determination unit that implements pattern matching filtering by comparing data at the comparison position designated by the position designating unit with preset data.

摘要翻译： 一种网络控制装置，具有：基于接收到的分组的报头中的规定信息进行分组过滤的分组过滤单元，其包括：位置指定单元，其将上位协议报头中的规定比较位置指定到 收到包; 以及附加确定单元，其通过将由位置指定单元指定的比较位置处的数据与预设数据进行比较来实现模式匹配滤波。

公开(公告)号：USD533141S1

公开(公告)日：2006-12-05

申请号：US29238631

申请日：2005-09-19

申请人： Nobuaki Suzuki

设计人： Nobuaki Suzuki

公开(公告)号：US06603148B1

公开(公告)日：2003-08-05

申请号：US09701239

申请日：2000-11-27

申请人： Masashi Sano ,  Nobuaki Suzuki ,  Shinichi Suzuki

发明人： Masashi Sano ,  Nobuaki Suzuki ,  Shinichi Suzuki

IPC分类号： H01L3300

CPC分类号： H01L33/62 ,  H01L23/3107 ,  H01L24/48 ,  H01L31/0203 ,  H01L33/486 ,  H01L33/54 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/12041 ,  H01L2924/12043 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2224/85399

摘要： A semiconductor device (A) includes a first lead (4) to which a semiconductor chip (1) is bonded, a second lead (5) connected to the semiconductor chip (1) via a wire (W), and a resin package (2) sealing the semiconductor chip (1) and the wire (W). Of the first and the second leads (4, 5), at least one of inner terminals (4a, 5b) enclosed in the resin package (2) is bent in a direction of a thickness of the resin package (2).

摘要翻译： 半导体器件（A）包括与半导体芯片（1）接合的第一引线（4），经由线（W）连接到半导体芯片（1）的第二引线（5）和树脂封装 2）密封半导体芯片（1）和导线（W）。 在第一和第二引线（4,5）中，封装在树脂封装（2）中的至少一个内部端子（4a，5b）在树脂封装（2）的厚度方向上弯曲。

公开(公告)号：US6025217A

公开(公告)日：2000-02-15

申请号：US561246

申请日：1995-11-21

申请人： Yasuhiro Kanaya ,  Masaru Yamazaki ,  Masahiro Fujino ,  Nobuaki Suzuki ,  Midori Kuki

发明人： Yasuhiro Kanaya ,  Masaru Yamazaki ,  Masahiro Fujino ,  Nobuaki Suzuki ,  Midori Kuki

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L27/12 ,  H01L29/786 ,  H01L21/786

CPC分类号： H01L29/66757 ,  H01L21/2026

摘要： Method of forming a uniform polycrystalline semiconductor thin film by laser annealing. The method is started with preparing a substrate having an insulating layer which has a relatively low thermal conductivity and a thickness of more than 20 nm. Then, an amorphous silicon thin film having a relatively high thermal conductivity is formed to a thickness of less than 35 nm on the insulating layer. Thereafter, the amorphous silicon thin film is irradiated with laser beam to impart thermal energy to the film. In this way, the amorphous film is converted into a polysilicon thin film. Since the thickness of the amorphous silicon film is less than 35 nm, polysilicons having uniform grain diameters can be grown.

摘要翻译： 通过激光退火形成均匀多晶半导体薄膜的方法。 该方法开始于制备具有绝热层的基板，该绝缘层具有相对较低的热导率和大于20nm的厚度。 然后，在绝缘层上形成厚度小于35nm的导热率较高的非晶硅薄膜。 此后，用激光束照射非晶硅薄膜，以赋予薄膜热能。 以这种方式，将非晶膜转变为多晶硅薄膜。 由于非晶硅膜的厚度小于35nm，因此可以生长具有均匀粒径的多晶硅。