摘要:
A method and an apparatus for measuring settling characteristics of a device under test. A measurement system for measuring an input signal by sampling and digitizing that input signal is employed to obtain reference data by measuring a reference signal, at least one level of which is flat, and to obtain measurement data by measuring a second signal representing the settling characteristics to be measured but containing an error component due to inclusion of the measurement system itself. The error component is removed from the measurement data by adjusting the timing and level of the reference data relative to those of the measurement data.
摘要:
A test head comprising an electrically conductive cylindrical member for coupling to a device under test, a first path for connecting a first type of signal with the device under test, the first path being located outside the cylindrical member, and a second path for connecting a second type of signal with the device under test, the second path being located inside the cylindrical member, thereby preventing interference between signals of the first and second types. The first type of signal may be a digital signal and the second type of signal may be an analog signal.
摘要:
A test head comprising an electrically conductive cylindrical member for coupling to a device under test, a first path for connecting a first type of signal with the device under test, the first path being located outside the cylindrical member, and a second path for connecting a second type of signal with the device under test, the second path being located inside the cylindrical member, hereby preventing interference between signals of the first and second types. The first type of signal may be a digital signal and the second type of signal may be an analog signal.
摘要:
This invention provide a testing device and method for a quantum battery by a semiconductor probe, whereby the electrical characteristics of the charging layer can be evaluated during the quantum battery manufacturing process. The testing device equipped with a semiconductor probe constituted by a conductive electrode and a metal oxide semiconductor layer including a metal oxide semiconductor which are laminated on a support, a source voltage for applying voltage across an electrode equipped to the semiconductor probe and a basic electrode laminated on a secondary battery charging layer, and an ammeter for measuring the current flowing between the electrode equipped on the semiconductor probe and the basic electrode of the secondary battery on which charging layer is laminated, and measures the current-voltage characteristics of the charging layer.
摘要:
An electrode probe is brought into contact with a measurement part on an outer surface of at least one of the positive electrode and the negative electrode of a sheet type cell, and quantity of electricity is measured at the measurement part, so as to evaluate the sheet type cell. The electrode probe may be connected to a voltage meter and to a charge source or a discharge source, and the evaluation made by detecting a charge characteristic that changes the cell from a non-charged state to a fully charged state, a discharge characteristic that changes the cell from a fully charged state to the non-charged state, or a measurement voltage of the voltage meter when the cell is in the fully charged state.
摘要:
There is provided an electrode structure for preventing cracks occurring in a metal electrode due to heating in a manufacturing process in the case of stacking an insulating resin and the metal electrode which are different in thermal expansion coefficient. An electrode for a semiconductor circuit, stacked on a substrate made of an insulating resin, has an electrode structure composed of a main electrode including a slit formed by cutting out a part thereof to prevent occurrence of a crack in a manufacturing process caused by a difference in thermal expansion coefficient from the substrate, and an auxiliary electrode that covers the slit in the main electrode. No slit is provided but a bridge is formed at a portion where the slit in the main electrode and the slit in the auxiliary electrode overlap with each other, thereby eliminating a gap portion where the electrode does not exist.
摘要:
A repair apparatus of a sheet type cell is capable of appropriately repairing and detoxifying defects of a sheet type cell having semiconductor characteristics. The repair apparatus repairs a sheet type cell in which a storage layer is sandwiched by layers of a positive electrode and a negative electrode and at least the storage layer has semiconductor characteristics. The repair apparatus applies electrical stimulation between the positive electrode and the negative electrode, measures electrical characteristics of the sheet type cell when the electrical stimulation is applied, and specifies a value of the electrical stimulation by the electrical stimulation source while considering measured electrical characteristics.
摘要:
A testing device and method of a quantum battery by a semiconductor probe capable of evaluating electric characteristics of a charge layer in the middle of a production process of the quantum battery without damaging the charge layer. On semiconductor probe constituted by stacking electrode and metal oxide semiconductor on support body, and probe charge layer is formed of the same material as that of quantum battery and irradiated with ultraviolet rays. Forming probe charge layer of same material as that of quantum battery on semiconductor probe enables evaluation without damaging charge layer of the quantum battery. Testing device and method are provided which measure the charge/discharge characteristics of a charge layer in the middle of producing the quantum battery by a voltmeter and a constant current source or a discharge resistor by using the semiconductor probe including the probe charge layer.
摘要:
There is provided an electrode structure for preventing cracks occurring in a metal electrode due to heating in a manufacturing process in the case of stacking an insulating resin and the metal electrode which are different in thermal expansion coefficient. An electrode for a semiconductor circuit, stacked on a substrate made of an insulating resin, has an electrode structure composed of a main electrode including a slit formed by cutting out a part thereof to prevent occurrence of a crack in a manufacturing process caused by a difference in thermal expansion coefficient from the substrate, and an auxiliary electrode that covers the slit in the main electrode. No slit is provided but a bridge is formed at a portion where the slit in the main electrode and the slit in the auxiliary electrode overlap with each other, thereby eliminating a gap portion where the electrode does not exist.
摘要:
A repair apparatus of a sheet type cell that is capable of appropriately repairing and detoxifying defects of a sheet type cell having semiconductor characteristics is provided.The repair apparatus repairs a sheet type cell in which a storage layer is sandwiched by layers of a positive electrode and a negative electrode and at least the storage layer has semiconductor characteristics. The repair apparatus includes an electrical stimulation source that applies electrical stimulation between the positive electrode and the negative electrode, an electrical characteristic measurement means that measures electrical characteristics of the sheet type cell when the electrical stimulation is applied, and a control means that specifies a value of the electrical stimulation by the electrical stimulation source while considering measured electrical characteristics.