公开(公告)号：US5507182A

公开(公告)日：1996-04-16

申请号：US198052

申请日：1994-02-18

申请人： Toshitaka Yamada ,  Masahito Imai ,  Akira Tai

发明人： Toshitaka Yamada ,  Masahito Imai ,  Akira Tai

IPC分类号： G01P1/00 ,  G01P1/02 ,  G01P15/12 ,  G01P15/08

CPC分类号： G01P15/123 ,  G01P1/003 ,  G01P1/023

摘要： A semiconductor accelerometer which can satisfy the requirements of both the sensitivity and the fracture strength without any contrivance for providing viscous liquid and beam stopper material is provided. A casing comprises a stem and a shell. The casing houses an accelerometer chip. The silicon accelerometer chip is of double cantilever beam structure. Each beam is provided with piezo resistance layers. The motion of the beams due to the action of acceleration is converted into electrical signals. The resonant frequency of the beams of the accelerometer chip is above the resonant frequency of the casing itself, so that the acceleration components above this resonant frequency are damped by the casing and therefore most acceleration components in the resonant frequency of the beam are damped. As a result, the beams of the accelerometer chip can be protected from the impacts due to the dropping of the accelerometer, or the like.

摘要翻译： 提供了能够满足灵敏度和断裂强度要求的半导体加速度计，而没有任何设计提供粘性液体和束塞材料。 壳体包括杆和壳。 外壳装有加速度计芯片。 硅加速度计芯片是双悬臂梁结构。 每个梁都设有压电电阻层。 由于加速度的作用，梁的运动被转换为电信号。 加速度计芯片的光束的谐振频率高于壳体本身的谐振频率，使得高于该谐振频率的加速度分量被壳体阻尼，因此波束的谐振频率中的大多数加速度分量被衰减。 结果，可以防止加速度计芯片的梁由于加速度计的掉落等而受到冲击。

公开(公告)号：US4829822A

公开(公告)日：1989-05-16

申请号：US98050

申请日：1987-09-17

申请人： Masahito Imai ,  Toshitaka Yamada ,  Tiaki Mizuno ,  Hirohito Shioya

发明人： Masahito Imai ,  Toshitaka Yamada ,  Tiaki Mizuno ,  Hirohito Shioya

IPC分类号： G01P1/00 ,  G01P15/08 ,  G01P15/12

CPC分类号： G01P15/0802 ,  G01P1/003 ,  G01P15/123 ,  G01P2015/0828

摘要： A semiconductor accelerometer includes a package containing damping liquid. A base is fixedly disposed within the package. A semiconductor plate is disposed within the package and is supported on the base. The semiconductor plate has a movable free end and a deformable diaphragm. A semiconductor strain gauge is associated with the diaphragm and deforms in accordance with deformation of the diaphragm. The base has a first surface opposing the semiconductor plate free end. The first surface of the base has a recess for limiting movement of the semiconductor plate free end. The recess extends to and opens at a second surface of the base which differs from the first surface.

公开(公告)号：US4967597A

公开(公告)日：1990-11-06

申请号：US336381

申请日：1989-04-11

申请人： Toshitaka Yamada ,  Tiaki Mizuno ,  Masahito Imai ,  Haruyuki Ikeo ,  Hirohito Sioya ,  Masahito Muto ,  Motomi Iyoda

发明人： Toshitaka Yamada ,  Tiaki Mizuno ,  Masahito Imai ,  Haruyuki Ikeo ,  Hirohito Sioya ,  Masahito Muto ,  Motomi Iyoda

IPC分类号： G01P1/00

CPC分类号： G01P1/003

摘要： When an acceleration sensor is used, it is attached to a measured object to detect an acceleration applied to the object. The acceleration sensor includes a package having at least one chamber. A sensor element is disposed in the chamber and has a portion which vibrates in response to the acceleration. Damping liquid is sealed within the package and has a quantity which allows the sensor element to be submerged in the damping liquid and which allows a predetermined quantity of gas to remain in the package. The gas absorbs a thermally-induced volume change of the damping liquid. In the absence of the acceleration, a gas bubble is prevented from separating from the gas. In addition, the gas bubble is prevented from staying in the chamber.

公开(公告)号：US07098799B2

公开(公告)日：2006-08-29

申请号：US10808428

申请日：2004-03-25

申请人： Masahito Imai ,  Takeshi Shinoda

发明人： Masahito Imai ,  Takeshi Shinoda

IPC分类号： G08B21/00

CPC分类号： G01L9/06 ,  B60T17/22

摘要： A sensor unit sensing a physical quantity comprises a first voltage evaluation circuit, a second voltage evaluation circuit, an alarm signal output circuit, and a sensor output circuit. The first voltage evaluation circuit evaluates a power voltage by comparing it with a reference voltage and outputs an accident signal when the power voltage is lower than a first predetermined voltage. The second voltage evaluation circuit working in a lower voltage range in which the first voltage evaluation circuit is insensitive outputs the accident signal when the power voltage is lower than a second predetermined voltage. The alarm signal output circuit outputs an alarm signal in response to the accident signal. The sensor output circuit outputs a sensor signal and inhibits the circuit from outputting the sensor signal in response to the accident signal, so that the alarm signal output circuit provides the alarm signal in response to the accident signal.

摘要翻译： 感测物理量的传感器单元包括第一电压评估电路，第二电压评估电路，报警信号输出电路和传感器输出电路。 第一电压评估电路通过与参考电压进行比较来评估电源电压，并且当电源电压低于第一预定电压时输出事故信号。 工作在第一电压评估电路不敏感的较低电压范围的第二电压评估电路在电源电压低于第二预定电压时输出事故信号。 报警信号输出电路根据事故信号输出报警信号。 传感器输出电路输出传感器信号，并根据事故信号禁止电路输出传感器信号，使报警信号输出电路根据事故信号提供报警信号。

公开(公告)号：US06550331B2

公开(公告)日：2003-04-22

申请号：US09947409

申请日：2001-09-07

申请人： Tetsuo Fujii ,  Masahito Imai

发明人： Tetsuo Fujii ,  Masahito Imai

IPC分类号： G01P15125

CPC分类号： B81B7/0006 ,  B81B2201/0235 ,  C07C303/32 ,  C07C303/44 ,  G01C19/56 ,  G01C19/5656 ,  G01C19/5719 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0817 ,  G01P2015/0828 ,  Y10T29/49002 ,  Y10T29/49004 ,  C07C309/17

摘要： A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.

公开(公告)号：US5747694A

公开(公告)日：1998-05-05

申请号：US686601

申请日：1996-07-26

申请人： Horonobu Baba ,  Tiaki Mizuno ,  Masahito Imai ,  Yuichi Yokoyama ,  Masaki Takakuwa ,  Yasuki Shimoyama

发明人： Horonobu Baba ,  Tiaki Mizuno ,  Masahito Imai ,  Yuichi Yokoyama ,  Masaki Takakuwa ,  Yasuki Shimoyama

IPC分类号： G01L9/00

CPC分类号： G01L19/147 ,  G01L19/0038 ,  G01L19/0084 ,  G01L19/0636 ,  G01L19/143

摘要： A pressure sensor has a resin housing containing a pressure sensor positioned between a reference pressure chamber and a pressure to be measured. A terminal extends through the housing toward the sensor. A wire connects the terminal to the sensor. When a connector is connected to the terminal, it may compress air around the terminal. The compressed air may travel along the terminal and break the wire connected to the sensor. To prevent such breakage, a barrier wall is provided to block the compressed air from penetrating toward the wire. The reference pressure chamber is divided into a main chamber and a subchamber by the barrier wall. Since the barrier wall blocks the compressed air, the compressed air can not reach a silicon gel on the sensor and the wire in the main chamber. Therefore, the wire is protected.

摘要翻译： 压力传感器具有树脂壳体，其包含位于参考压力室和待测量压力之间的压力传感器。 端子延伸穿过壳体朝向传感器。 导线将端子连接到传感器。 当连接器连接到终端时，可能会压缩终端周围的空气。 压缩空气可以沿着端子行进并断开连接到传感器的电线。 为了防止这种破裂，设置阻挡壁以阻止压缩空气渗透到线。 基准压力室由隔离壁分为主室和副室。 由于阻隔壁阻挡压缩空气，压缩空气不能到达传感器上的硅凝胶和主室中的导线。 因此，电线被保护。

公开(公告)号：US07685877B2

公开(公告)日：2010-03-30

申请号：US12215884

申请日：2008-06-30

申请人： Tetsuo Fujii ,  Masahito Imai

发明人： Tetsuo Fujii ,  Masahito Imai

IPC分类号： G01P15/125

CPC分类号： B81B7/0006 ,  B81B2201/0235 ,  C07C303/32 ,  C07C303/44 ,  G01C19/56 ,  G01C19/5656 ,  G01C19/5719 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0817 ,  G01P2015/0828 ,  Y10T29/49002 ,  Y10T29/49004 ,  C07C309/17

摘要： A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.

摘要翻译： 具有S / N比提高的新结构的半导体机械传感器。 在硅衬底1的中心部分，形成包括梁结构的凹部2。 在梁的尖端处形成重物，并且在凹部2的底面中的重物的底面中，重物形成为电极5。 在重量部分4和电极5之间施加交流电力，从而产生静电，并且重量被静电激励。 在与重量的激励方向垂直的轴向方向上，电极6设置为面对重物的一个表面和面向其的基板的壁表面。 对面对电极之间的电容变化进行电检测，因此检测到以相同方向作用的物理力的变化。

公开(公告)号：US07040165B2

公开(公告)日：2006-05-09

申请号：US11062935

申请日：2005-02-22

申请人： Tetsuo Fujii ,  Masahito Imai

发明人： Tetsuo Fujii ,  Masahito Imai

IPC分类号： G01P15/125

CPC分类号： B81B7/0006 ,  B81B2201/0235 ,  C07C303/32 ,  C07C303/44 ,  G01C19/56 ,  G01C19/5656 ,  G01C19/5719 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0817 ,  G01P2015/0828 ,  Y10T29/49002 ,  Y10T29/49004 ,  C07C309/17

摘要： A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.

摘要翻译： 具有S / N比提高的新结构的半导体机械传感器。 在硅衬底1的中心部分，形成包括梁结构的凹部2。 在梁的尖端处形成重物，并且在凹部2的底面中的重物的底面中，重物形成为电极5。 在重量部分4和电极5之间施加交流电力，从而产生静电，并且重量被静电激励。 在与重量的激励方向垂直的轴向方向上，电极6设置为面对重物的一个表面和面向其的基板的壁表面。 对面对电极之间的电容变化进行电检测，因此检测到以相同方向作用的物理力的变化。

公开(公告)号：US06422078B1

公开(公告)日：2002-07-23

申请号：US09742448

申请日：2000-12-22

申请人： Masahito Imai

发明人： Masahito Imai

IPC分类号： G01P15125

摘要： A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.

公开(公告)号：US5900554A

公开(公告)日：1999-05-04

申请号：US3711

申请日：1998-01-07

申请人： Horonobu Baba ,  Tiaki Mizuno ,  Masahito Imai ,  Yuichi Yokoyama ,  Masaki Takakuwa ,  Yasuki Shimoyama

发明人： Horonobu Baba ,  Tiaki Mizuno ,  Masahito Imai ,  Yuichi Yokoyama ,  Masaki Takakuwa ,  Yasuki Shimoyama

IPC分类号： G01L9/00 ,  G01L9/04

CPC分类号： G01L19/147 ,  G01L19/0038 ,  G01L19/0084 ,  G01L19/0636 ,  G01L19/143

摘要： When a compressed air is led into a reference pressure chamber along with a boundary between a resin housing and a terminal, such compressed air may cause a wire breaking. A barrier wall for blocking the compressed air from penetrating toward the wire is disposed. The reference pressure chamber is divided into a main chamber and a subchamber by the barrier wall. Since the barrier wall blocks the compressed air, the compressed air can not reach a silicon gel in the main chamber. Therefore, the wire breaking caused by the compressed air when connecting a connector therewith can be precluded.

摘要翻译： 当压缩空气与树脂壳体和端子之间的边界一起被引入参考压力室时，这种压缩空气可能导致断线。 设置用于阻挡压缩空气渗透到线的阻挡壁。 基准压力室由隔离壁分为主室和副室。 由于阻隔壁阻挡压缩空气，所以压缩空气不能到达主室中的硅凝胶。 因此，可以防止在连接连接器时由压缩空气引起的断线。