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44 条记录 (耗时 0.025 秒)

    Scroll type compressor and rotation preventing mechanism used in the same
    5.
    发明授权
    Scroll type compressor and rotation preventing mechanism used in the same 有权
    滚动式压缩机和旋转防止机构

    公开(公告)号：US06200115B1

    公开(公告)日：2001-03-13

    申请号：US09366196

    申请日：1999-08-04

    申请人： Toshiyuki Kikuchi

    发明人： Toshiyuki Kikuchi

    IPC分类号： F04C1804

    CPC分类号： F01C17/063 ,  F01C17/06 ,  F16C2360/42

    摘要： A ball coupling constituting a rotation preventing mechanism (77) includes a first annular race section (59, 79) having a thrust ball transfer surface formed on one surface thereof, a second annular race section (61, 81) having a ball transfer surface formed on one surface thereof confronting the one surface of the first race section and thrust balls (67) interposed between the first and second race sections (79, 81). At least one of the first and second race sections has a cross sectional shape such that the central portion of the other surface (87) thereof confronting the one surface is a recessed groove (89). A scroll type compressor includes the rotation preventing mechanism on the back surface of a movable scroll member.

    摘要翻译： 构成旋转防止机构（77）的球形联轴器包括在其一个表面上形成有推力球转移面的第一环形圈部（59,79），形成有球转移面的第二环形圈部（61,81） 在其面对第一座圈部分的一个表面的一个表面上以及置于第一和第二座圈部分（79,81）之间的推力球（67）。 第一和第二座圈中的至少一个具有横截面形状，使得面对该一个表面的另一个表面（87）的中心部分是凹槽（89）。 涡旋式压缩机包括在可动涡旋件的后表面上的防旋转机构。

    Scroll compressor with end-plate valve having a conical passage and a free sphere
    6.
    发明授权
    Scroll compressor with end-plate valve having a conical passage and a free sphere 失效
    具有圆锥形通道和自由球体的端板阀的涡旋压缩机

    公开(公告)号：US5860791A

    公开(公告)日：1999-01-19

    申请号：US670062

    申请日：1996-06-25

    申请人： Toshiyuki Kikuchi

    发明人： Toshiyuki Kikuchi

    IPC分类号： F04C28/26 ,  F04B49/02 ,  F04C18/02 ,  F04C18/04 ,  F04C28/16

    CPC分类号： F04C28/16

    摘要： A variable displacement mechanism of fluid displacement apparatus includes a housing having a suction chamber and a discharge chamber, a first scroll member disposed within said housing and having an end plate from which a first spiral element axially extends, and a second scroll member disposed for non-rotatable orbital movement relative to the first scroll member and having an end plate from which a second spiral element axially extends. At least one control mechanism is disposed on the end plate of the first scroll member for controlling the fluid communication between the fluid pockets and the suction chamber based on the rotational motion of the driving mechanism.

    摘要翻译： 流体置换装置的可变排量机构包括具有吸入室和排出室的壳体，第一涡旋构件，设置在所述壳体内并具有端板，第一螺旋元件从该端板轴向延伸;以及第二涡旋构件， 可旋转的轨道运动相对于第一涡旋构件并且具有端板，第二螺旋元件从该端板轴向延伸。 至少一个控制机构设置在第一涡旋件的端板上，用于基于驱动机构的旋转运动来控制流体袋和吸入室之间的流体连通。

    Semiconductor device having conducting structure
    7.
    发明授权
    Semiconductor device having conducting structure 失效
    具有导电结构的半导体器件

    公开(公告)号：US5793097A

    公开(公告)日：1998-08-11

    申请号：US519096

    申请日：1995-08-24

    申请人： Hiromi Shimamoto ,  Takashi Uchino ,  Takeo Shiba ,  Kazuhiro Ohnishi ,  Yoichi Tamaki ,  Takashi Kobayashi ,  Toshiyuki Kikuchi ,  Takahide Ikeda

    发明人： Hiromi Shimamoto ,  Takashi Uchino ,  Takeo Shiba ,  Kazuhiro Ohnishi ,  Yoichi Tamaki ,  Takashi Kobayashi ,  Toshiyuki Kikuchi ,  Takahide Ikeda

    IPC分类号： H01C7/06 ,  H01L21/02 ,  H01L21/822 ,  H01L27/04 ,  H01L27/06 ,  H01L29/00 ,  H01L23/48 ,  H01L29/76

    CPC分类号： H01L27/0652 ,  H01L27/0688 ,  H01L28/20

    摘要： The present invention provides a polycrystalline silicon conducting structure (e.g., a resistor) whose resistance value is controlled, and can be less variable and less dependent on temperature with respect to any resistant value, and a process of producing the same. Use is made of at least a two-layer structure including a first polycrystalline silicon layer of large crystal grain size and a second polycrystalline silicon layer of small crystal grain size, and the first polycrystalline silicon layer has a positive temperature dependence of resistance while the second polycrystalline layer has a negative temperature dependence of resistance, or vice versa. Moreover, the polycrystalline silicon layer of large grain size can be formed by high dose ion implantation and annealing, or by depositing the layers by chemical vapor deposition at different temperatures so as to form large-grain and small-grain layers.

    摘要翻译： 本发明提供了一种其电阻值被控制的多晶硅导电结构（例如电阻器），并且可以相对于任何电阻值而言可以变化较小并且对温度的依赖性较小，及其制造方法。 使用至少包括具有大晶粒尺寸的第一多晶硅层和小晶粒尺寸的第二多晶硅层的两层结构，并且第一多晶硅层具有正的温度对电阻的依赖性，而第二多晶硅层的第二 多晶层具有负电阻的温度依赖性，反之亦然。 此外，可以通过高剂量离子注入和退火，或者通过在不同温度下的化学气相沉积来沉积这些层，形成大晶粒和小晶粒层，可以形成大晶粒尺寸的多晶硅层。

    Lock up control of a hydraulic torque converter type automatic transmission
    9.
    发明授权
    Lock up control of a hydraulic torque converter type automatic transmission 失效
    锁定液压变矩器型自动变速器的控制

    公开(公告)号：US4687083A

    公开(公告)日：1987-08-18

    申请号：US592362

    申请日：1984-03-22

    申请人： Kaoru Sotoyama ,  Shizuo Sumida ,  Toshiyuki Kikuchi

    发明人： Kaoru Sotoyama ,  Shizuo Sumida ,  Toshiyuki Kikuchi

    IPC分类号： F16H61/14 ,  F16H45/02 ,  B60K41/02

    CPC分类号： F16H61/143 ,  Y10T477/735 ,  Y10T477/75

    摘要： A vehicle automatic transmission including a torque converter having a lock up clutch. A lock up control circuit is provided and has a memory including a first lock up control line for controlling the engagement and release of the lock up clutch when the torque converter turbine speed is close to the pump impeller speed, and a second lock up control line which is drawn along a line wherein the engine output torque is substantially zero so that the lock up clutch is released at a given engine load when the turbine speed is decreased beyond the first lock up control line, or when the turbine speed is increased beyond the second lock up control line.

    摘要翻译： 一种车辆自动变速器，包括具有锁止离合器的变矩器。 提供一种锁定控制电路，并且具有存储器，该存储器包括第一锁定控制线，用于当变矩器涡轮转速接近泵叶轮速度时控制锁止离合器的接合和释放;以及第二锁定控制线 其沿着其中发动机输出扭矩基本上为零的线被绘制，使得当涡轮速度降低超过第一锁定控制线时，或者当涡轮机速度增加超过第一锁定控制线时，锁定离合器在给定的发动机负载下被释放 第二锁定控制线。

    Semiconductor device and process of producing the same
    10.
    发明授权
    Semiconductor device and process of producing the same 失效
    半导体器件及其制造方法

    公开(公告)号：US07238582B2

    公开(公告)日：2007-07-03

    申请号：US11000092

    申请日：2004-12-01

    申请人： Hiromi Shimamoto ,  Takashi Uchino ,  Takeo Shiba ,  Kazuhiro Ohnishi ,  Yoichi Tamaki ,  Takashi Kobayashi ,  Toshiyuki Kikuchi ,  Takahide Ikeda

    发明人： Hiromi Shimamoto ,  Takashi Uchino ,  Takeo Shiba ,  Kazuhiro Ohnishi ,  Yoichi Tamaki ,  Takashi Kobayashi ,  Toshiyuki Kikuchi ,  Takahide Ikeda

    IPC分类号： H01L21/8222

    CPC分类号： H01L27/0652 ,  H01L27/0688 ,  H01L28/20

    摘要： The present invention provides a polycrystalline silicon conducting structure (e.g., a resistor) whose resistance value is controlled, and can be less variable and less dependent on temperature with respect to any resistant value, and a process of producing the same. Use is made of at least a two-layer structure including a first polycrystalline silicon layer of large crystal grain size and a second polycrystalline silicon layer of small crystal grain size, and the first polycrystalline silicon layer has a positive temperature dependence of resistance while the second polycrystalline silicon layer has a negative temperature dependence of resistance, or vice versa. Moreover, the polycrystalline silicon layer of large grain size can be formed by high dose ion implantation and annealing, or by depositing the layers by chemical vapor deposition at different temperatures so as to form large-grain and small-grain layers.

    摘要翻译： 本发明提供了一种其电阻值被控制的多晶硅导电结构（例如电阻器），并且可以相对于任何电阻值而言可以变化较小并且对温度的依赖性较小，及其制造方法。 使用至少包括具有大晶粒尺寸的第一多晶硅层和小晶粒尺寸的第二多晶硅层的两层结构，并且第一多晶硅层具有正的温度对电阻的依赖性，而第二多晶硅层的第二 多晶硅层具有负电阻的温度依赖性，反之亦然。 此外，可以通过高剂量离子注入和退火，或者通过在不同温度下的化学气相沉积来沉积这些层，形成大晶粒和小晶粒层，可以形成大晶粒尺寸的多晶硅层。